PRELIMINARY. C Soldering Temperature, for 10 seconds 300 (1.6mm from case )
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1 dvanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fully valanche Rated PRELIMINRY PD IRFP064N HEXFET Power MOSFET V DSS = 55V R DS(on) = 0.008Ω I D = 98 Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-28 package because of its isolated mounting hole. bsolute Maximum Ratings Parameter Max. Units I T C = 25 C Continuous Drain Current, V V 98 I T C = C Continuous Drain Current, V V 69 I DM Pulsed Drain Current 390 P C = 25 C Power Dissipation 50 W Linear Derating Factor.0 W/ C V GS Gate-to-Source Voltage ± 20 V E S Single Pulse valanche Energy 480 mj I R valanche Current 59 E R Repetitive valanche Energy 5 mj dv/dt Peak Diode Recovery dv/dt 4.0 V/ns T J Operating Junction and -55 to + 75 T STG Storage Temperature Range C Soldering Temperature, for seconds 300 (.6mm from case ) Mounting torque, 6-32 or M3 srew lbf in (.N m) Thermal Resistance Parameter Typ. Max. Units R θjc Junction-to-Case.0 R θcs Case-to-Sink, Flat, Greased Surface 0.24 C/W R θj Junction-to-mbient 40
2 Electrical T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)DSS Drain-to-Source Breakdown Voltage 55 V V GS = 0V, I D = 250µ V (BR)DSS/ T J Breakdown Voltage Temp. Coefficient V/ C Reference to 25 C, I D = m R DS(on) Static Drain-to-Source On-Resistance Ω V GS = V, I D = 59 V GS(th) Gate Threshold Voltage V V DS = V GS, I D = 250µ g fs Forward Transconductance 42 S V DS = 25V, I D = 59 I DSS Drain-to-Source Leakage Current 25 V µ DS = 55V, V GS = 0V 250 V DS = 44V, V GS = 0V, T J = 50 C I GSS Gate-to-Source Forward Leakage V GS = 20V n Gate-to-Source Reverse Leakage - V GS = -20V Q g Total Gate Charge 70 I D = 59 Q gs Gate-to-Source Charge 32 nc V DS = 44V Q gd Gate-to-Drain ("Miller") Charge 74 V GS = V, See Fig. 6 and 3 t d(on) Turn-On Delay Time 4 V DD = 28V t r Rise Time I D = 59 ns t d(off) Turn-Off Delay Time 43 R G = 2.5Ω t f Fall Time 70 R D = 0.39Ω, See Fig. Between lead, L D Internal Drain Inductance 5.0 6mm (0.25in.) nh from package L S Internal Source Inductance 3 and center of die contact C iss Input Capacitance 4000 V GS = 0V C oss Output Capacitance 300 pf V DS = 25V C rss Reverse Transfer Capacitance 480 ƒ =.0MHz, See Fig. 5 Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current MOSFET symbol 98 (Body Diode) showing the I SM Pulsed Source Current integral reverse 390 (Body Diode) p-n junction diode. V SD Diode Forward Voltage.3 V T J = 25 C, I S = 59, V GS = 0V t rr Reverse Recovery Time 70 ns T J = 25 C, I F = 59 Q rr Reverse Recovery Charge nc di/dt = /µs Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. ) V DD = 25V, starting T J = 25 C, L = 90µH R G = 25Ω, I S = 59. (See Figure 2) I SD 59, di/dt 290/µs, V DD V (BR)DSS, T J 75 C Pulse width 300µs; duty cycle 2%. Calculated continuous current based on maximum allowable junction temperature; for recommended current-handling of the package refer to Design Tip # 93-4 Uses IRF3205 data and test conditions.
3 I, Drain-to-Source Current () D VGS TOP 5V V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 4.5V 20µs PULSE WIDTH T C = 25 C 0. V DS, Drain-to-Source Voltage (V) Fig. Typical Output Characteristics, T J = 25 o C I, Drain-to-Source Current () D VGS TOP 5V V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 4.5V 20µs PULSE WIDTH T C = 75 C 0. V DS, Drain-to-Source Voltage (V) Fig 2. Typical Output Characteristics, T J = 75 o C I D, Drain-to-Source Current () T = 25 C J T = 75 C J V DS= 25V 20µs PULSE WIDTH V GS, Gate-to-Source Voltage (V) R DS(on), Drain-to-Source On Resistance (Normalized) I D = 98 V GS = V T J, Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature
4 C, Capacitance (pf) 8000 V GS = 0V, f = MHz 7000 C iss = C gs + C gd, C ds SHORTED C rss = Cgd C oss = C ds + Cgd 6000 C iss C oss C rss 0 V DS, Drain-to-Source Voltage (V) V, Gate-to-Source Voltage (V) GS I D = 59 V DS = 44V V DS = 28V V DS = V FOR TEST CIRCUIT SEE FIGURE Q, Total Gate Charge (nc) G Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage I SD, Reverse Drain Current () T = 75 C J T = 25 C J I D, Drain Current () OPERTION IN THIS RE LIMITED BY RDS(on) µs µs ms ms V GS = 0V V SD, Source-to-Drain Voltage (V) T C = 25 C T J = 75 C Single Pulse V DS, Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating rea
5 LIMITED BY PCKGE V GS V DS R D D.U.T. R G 80 V DD I D, Drain Current (mps) V Pulse Width µs Duty Factor 0. % Fig a. Switching Time Test Circuit T C, Case Temperature ( C) Fig 9. Maximum Drain Current Vs. Case Temperature Fig b. Switching Time Waveforms Thermal Response (Z thjc ) 0. D = Notes:. D uty factor D = t / t 2 SINGLE PULSE 0.0 (THERML RESPONSE) 2. P eak T J = P D M x Z th JC + T C t, Rectangular Pulse Duration (sec) PD M t t 2 Fig. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6 V Fig 2a. Unclamped Inductive Test Circuit E S, Single Pulse valanche Energy (mj) ID TOP BOTTOM 59 V DD = 25V Starting T J, Junction Temperature ( C) Fig 2b. Unclamped Inductive Waveforms Fig 2c. Maximum valanche Energy Vs. Drain Current V Fig 3a. Basic Gate Charge Waveform Fig 3b. Gate Charge Test Circuit
7 Peak Diode Recovery dv/dt Test Circuit D.U.T Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer R G dv/dt controlled by R G Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test V DD * * V GS = 5V for Logic Level Devices Fig 4. For N-Channel HEXFETS
8 Package Outline TO-247C Outline Dimensions are shown in millimeters (inches) 5.90 (.626) 5.30 (.602) - B (.43) 3.55 (.40) 0.25 (.0) M 5.50 (.27) D B M - D (.209) 4.70 (.85) 2.50 (.089).50 (.059) (.800) 9.70 (.775) 4.80 (.583) 4.20 (.559) 2 3 2X - C (.70) 3.70 (.45) 5.50 (.27) 4.50 (.77) NOTES: DIMENSIONING & TOLERNCING PER NSI Y4.5M, CONTROLLING DIMENSION : INCH. 3 CONFORMS TO JEDEC OUTLINE TO-247-C (.094) 2.00 (.079) 2X 5.45 (.25) 2X 3X 3.40 (.33) 3.00 (.8).40 (.056).00 (.039) 0.25 (.0) M C S 3X 0.80 (.03) 0.40 (.06) 2.60 (.2) 2.20 (.087) LED SSIGNMENTS - GTE 2 - DRIN 3 - SOURCE 4 - DRIN Part Marking Information TO-247C EXMPLE : THIS IS N IRFPE30 WITH SSEMBLY LOT CODE 3Q INTERNTIONL RECTIFIER LOGO SSEMBLY LOT CODE IRFPE30 3Q 9302 PRT NUMBER DTE CODE (YYWW) YY = YER WW WEEK WORLD HEDQURTERS: 233 Kansas St., El Segundo, California 90245, Tel: (3) EUROPEN HEDQURTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: IR CND: 732 Victoria Park ve., Suite 20, Markham, Ontario L3R 2Z8, Tel: (905) IR GERMNY: Saalburgstrasse 57, 6350 Bad Homburg Tel: IR ITLY: Via Liguria 49, 7 Borgaro, Torino Tel: IR FR EST: K&H Bldg., 2F, Nishi-Ikeburo 3-Chome, Toshima-Ku, Tokyo, Japan 7 Tel: IR SOUTHEST SI: 35 Outram Road, #-02 Tan Boon Liat Building, Singapore 036 Tel: Data and specifications subject to change without notice. 2/96
PRELIMINARY. C Soldering Temperature, for 10 seconds 300 (1.6mm from case )
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PD- 937C IRLR/U2705 HEXFET Power MOSFET Logic-Leve Gate Drive Utra Low On-Resistance Surface Mount (IRLR2705) Straight Lead (IRLU2705) dvanced Process Technoogy Fast Switching Fuy vaanche Rated G D S V
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Applications l l l l Switch Mode Power Supply (SMPS) Uninterruptible Power Supply High Speed Power Switching Lead-Free SMPS MOSFET PD - 9546 HEXFET Power MOSFET V DSS R DS(on) max I D 650V 0.93Ω 8.5A Benefits
More informationSMPS MOSFET. V DSS Rds(on) max I D
SMPS MOSFET PD 980 pplications l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed power switching l High Voltage Isolation = 2.5KVRMS Benefits l Low Gate Charge Qg results
More informationSMPS MOSFET. V DSS Rds(on) max I D
Applications l Switch Mode Power Supply (SMPS) l Uninterruptable Power Supply l High speed power switching SMPS MOSFET PD-93772A HEXFET Power MOSFET V DSS Rds(on) max I D 400V.0Ω 5.5A Benefits l Low Gate
More informationD-Pak I-Pak up to 1.5 watts are possible in typical surface mount
l Surface Mount (IRFR2407) l Straight Lead (IRFU2407) l Advanced Process Technology l Dynamic dv/dt Rating l Fast Switching l Fully Avalanche Rated Description Seventh Generation HEXFET Power MOSFETs from
More informationSMPS MOSFET. V DSS R DS (on) max I D
Applications l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High Speed Power Switching SMPS MOSFET PD 987A IRFS9N60A HEXFET Power MOSFET V DSS R DS (on) max I D 600V 0.75Ω 9.2A Benefits
More informationP C = 100 C Power Dissipation Linear Derating Factor
PDP SWITCH PD - 97228 IRFI4228PbF Features l dvanced Process Technology l Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch pplications l Low E PULSE Rating to Reduce Power Dissipation
More informationStorage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case )
l l l l l Surface Mount (IRFR20N) Straight Lead (IRFU20N) dvanced Process Technology Fast Switching Fully valanche Rated escription Fifth Generation HEXFETs from International Rectifier utilize advanced
More informationSMPS MOSFET. V DSS R DS(on) typ. Trr typ. I D. 600V 385mΩ 130ns 15A
Applications Zero Voltage Switching SMPS Telecom and Server Power Supplies Uninterruptible Power Supplies Motor Control applications SMPS MOSFET PD - 9445A HEXFET Power MOSFET V DSS R DS(on) typ. Trr typ.
More informationPRELIMINARY. Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case )
PRELIMINRY PD- 9.336 IRFR/U024N HEXFET Power MOSFET Utra Low On-Resistance Surface Mount (IRFR024N) Straight Lead (IRFU024N) dvanced Process Technoogy Fast Switching Fuy vaanche Rated G D S V DSS = 55V
More informationAUTOMOTIVE MOSFET. I D = 140A Fast Switching
IRF3808 AUTOMOTIVE MOSFET Typical Applications HEXFET Power MOSFET Integrated Starter Alternator D 42 Volts Automotive Electrical Systems V DSS = 75V Benefits Advanced Process Technology R DS(on) = 0.007Ω
More informationIRFB260NPbF HEXFET Power MOSFET
Applications l High frequency DC-DC converters l Lead-Free PD - 95473 SMPS MOSFET IRFB260NPbF HEXFET Power MOSFET Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance
More informationParameter Maximum Units
l Co-packaged HEXFET Power MOSFET and Schottky iode l P-Channel HEXFET l Low V F Schottky Rectifier l Generation 5 Technology l Micro8 TM Footprint escription S G FETKY 2 3 TM 4 5 Top View The FETKY TM
More informationC Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Typical Applications l Industrial Motor Drive Benefits l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche
More informationSMPS MOSFET. V DSS R DS(on) max I D
SMPS MOSFET PD 93918 IRF3703 Applications Synchronous Rectification Active ORing l l HEXFET Power MOSFET V DSS R DS(on) max I D 30V 2.8mΩ 2A Benefits l Ultra Low OnResistance l Low Gate Impedance to Reduce
More informationSMPS MOSFET. V DSS R DS(on) max I D
Applications l High frequency DC-DC converters SMPS MOSFET PD - 9399A IRFR9N20D IRFU9N20D HEXFET Power MOSFET V DSS R DS(on) max I D 200V 0.38Ω 9.4A Benefits Low Gate-to-Drain Charge to Reduce Switching
More informationPRELIMINARY. C Soldering Temperature, for 10 seconds 300 (1.6mm from case )
l LogicLevel Gate rive l dvanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage ist. = 4.8mm l Fully valanche Rated escription Fifth Generation HEXFETs
More informationC Soldering Temperature, for 10 seconds 300 (1.6mm from case )
PD -95487A Typical Applications l Industrial Motor Drive Benefits l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax
More informationl Advanced Process Technology TO-220AB IRF630N
l Advanced Process Technology l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements Description Fifth Generation
More informationIRL1404SPbF IRL1404LPbF
l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description Seventh Generation HEXFET power
More informationHEXFET Power MOSFET V DSS = 40V. R DS(on) = Ω I D = 130A
l Logic-Level Gate Drive l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description Fifth
More informationC Soldering Temperature, for 10 seconds 300 (1.6mm from case ) Mounting Torque, 6-32 or M3 screw 1.1 (10) N m (lbf in)
Typical Applications l Industrial Motor Drive Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax
More informationSMPS MOSFET. V DSS R DS(on) max I D
SMPS MOSFET PD 93917A IRFP3703 Applications Synchronous Rectification Active ORing l l HEXFET Power MOSFET V DSS R DS(on) max I D 30V 0.0028Ω 2A Benefits l Ultra Low OnResistance l Low Gate Impedance to
More informationDescription Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Parameter Typ. Max. Units
l dvanced Process Technology l Ultra Low On-Resistance l Isolated Package l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage ist. = 4.8mm l Fully valanche Rated l Lead-Free escription Fifth Generation
More informationSMPS MOSFET. V DSS R DS(on) max I D
Applications l High frequency DC-DC converters SMPS MOSFET PD- 93805B IRFB31N20D IRFS31N20D IRFSL31N20D HEXFET Power MOSFET V DSS R DS(on) max I D 200V 0.082Ω 31A Benefits l Low Gate-to-Drain Charge to
More informationSMPS MOSFET. Symbol Parameter Max. Units
P- 93842B SMPS MOSFET IRF7455 HEXFET Power MOSFET pplications V SS R S(on) max I l High Frequency C-C Converters with Synchronous Rectification 30V 0.0075Ω 15 Benefits l l l Ultra-Low R S(on) at 4.5V V
More information1 = D 2 = S 3 = S 4 = G
l Ultra Low On-Resistance l P-Channel MOSFET l Very Small SOIC Package l Low Profile (
More informationIRF9530N. HEXFET Power MOSFET V DSS = -100V. R DS(on) = 0.20Ω I D = -14A
dvanced Process Technoogy Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching PChanne Fuy vaanche Rated Description Fifth Generation HEXFETs from Internationa Rectifier utiize advanced processing
More informationIRF1704 Benefits AUTOMOTIVE MOSFET
AUTOMOTIVE MOSFET PD 94012C Benefits HEXFET Power MOSFET l 200 C Operaing Temperature l Advanced Process Technology D V DSS = 40V l Ultra Low OnResistance l Dynamic dv/dt Rating l Fast Switching R DS(on)
More informationDescription Absolute Maximum Ratings ( TA = 25 C Unless Otherwise Noted) Symbol Maximum Units
P - 9480B IRF733 Generation V Technoogy Utra Low On-Resistance ua N-Channe MOSFET Surface Mount Fuy vaanche Rated S G S2 G2 HEXFET Power MOSFET 2 3 4 8 7 6 5 2 2 V SS = 30V R S(on) = 0.029Ω escription
More informationAUTOMOTIVE MOSFET. C Soldering Temperature, for 10 seconds 300 (1.6mm from case )
PD -95487 Typical Applications 42 Volts Automotive Electrical Systems Electrical Power Steering (EPS) Integrated Starter Alternator Lead-Free Benefits Ultra Low On-Resistance Dynamic dv/dt Rating 75 C
More informationSMPS MOSFET. V DSS R DS(on) max I D
PD - 93935B SMPS MOSFET IRFR3708 IRFU3708 Applications l High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer
More informationFETKY MOSFET & Schottky Diode
l Co-packaged HEXFET Power MOSFET and Schottky Diode l Ideal For Buck Regulator pplications l P-Channel HEXFET l Low V F Schottky Rectifier l SO-8 Footprint l Lead-Free Description The FETKY TM family
More informationSMPS MOSFET. V DSS R DS(on) typ. Trr typ. I D. 500V 0.125Ω 170ns 34A
Applications Zero Voltage Switching SMPS Telecom and Server Power Supplies Uninterruptible Power Supplies Motor Control applications SMPS MOSFET Features and Benefits SuperFast body diode eliminates the
More informationSMPS MOSFET. V DSS R DS(on) max I D
SMPS MOSFET PD - 9506A IRFR8N5DPbF IRFU8N5DPbF HEXFET Power MOSFET Applications High frequency DC-DC converters Lead-Free l l V DSS R DS(on) max I D 50V 0.25Ω 8A Benefits l Low Gate to Drain Charge to
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