IRLL3303. HEXFET Power MOSFET V DSS = 30V. R DS(on) = 0.031Ω I D = 4.6A SOT-223. Thermal Resistance PD C

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1 l Surface Mount l ynamic dv/dt Rating l LogicLevel Gate rive l Fast Switching l Ease of Paralleling l dvanced Process Technology l Ultra Low OnResistance escription Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. G HEXFET Power MOSFET S P 9379C V SS = 30V R S(on) = 0.03Ω I = 4.6 The SOT223 package is designed for surfacemount using vapor phase, infra red, or wave soldering techniques. Its unique package design allows for easy automatic pickandplace SOT223 as with other SOT or SOIC packages but has the added advantage of improved thermal performance due to an enlarged tab for heatsinking. Power dissipation of.0w is possible in a typical surface mount application. bsolute Maximum Ratings Parameter Max. Units T = 25 C Continuous rain Current, V V** 6.5 T = 25 C Continuous rain Current, V V* 4.6 T = 70 C Continuous rain Current, V V* 3.7 I M Pulsed rain Current 37 = 25 C Power issipation (PCB Mount)** 2. W = 25 C Power issipation (PCB Mount)*.0 W Linear erating Factor (PCB Mount)* 8.3 mw/ C V GS GatetoSource Voltage ± 6 V E S Single Pulse valanche Energy 40 mj I R valanche Current 4.6 E R Repetitive valanche Energy 0. mj dv/dt Peak iode Recovery dv/dt ƒ.3 V/ns T J, T STG Junction and Storage Temperature Range 55 to 50 C Thermal Resistance Parameter Typ. Max. Units R θj Junctiontomb. (PCB Mount, steady state)* C/W R θj Junctiontomb. (PCB Mount, steady state)** * When mounted on FR4 board using minimum recommended footprint. ** When mounted on inch square copper board, for comparison with other SM devices. /22/99

2 Electrical T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)SS raintosource Breakdown Voltage 30 V V GS = 0V, I = 250µ V (BR)SS / T J Breakdown Voltage Temp. Coefficient V/ C Reference to 25 C, I = m R S(on) Static raintosource OnResistance 0.03 V GS = V, I = 4.6 Ω V GS = 4.5V, I = 2.3 V GS(th) Gate Threshold Voltage.0 V V S = V GS, I = 250µ g fs Forward Transconductance 5.5 S V S = V, I = 2.3 I SS raintosource Leakage Current 25 V S = 30V, V GS = 0V µ 250 V S = 24V, V GS = 0V, T J = 25 C I GSS GatetoSource Forward Leakage V GS = 6V n GatetoSource Reverse Leakage V GS = 6V Q g Total Gate Charge I = 4.6 Q gs GatetoSource Charge nc V S = 24V Q gd Gatetorain ("Miller") Charge 6 V GS = V, See Fig. 6 and 9 t d(on) TurnOn elay Time 7.2 V = 5V t r Rise Time 22 I = 4.6 ns t d(off) TurnOff elay Time 33 R G = 6.2Ω t f Fall Time 28 R = 3.2Ω, See Fig. C iss Input Capacitance 840 V GS = 0V C oss Output Capacitance 340 pf V S = 25V C rss Reverse Transfer Capacitance 70 ƒ =.0MHz, See Fig. 5 Sourcerain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current MOSFET symbol 0.9 (Body iode) showing the I SM Pulsed Source Current integral reverse 37 (Body iode) pn junction diode. V S iode Forward Voltage.3 V T J = 25 C, I S = 4.6, V GS = 0V t rr Reverse Recovery Time ns T J = 25 C, I F = 4.6 Q rr Reverse RecoveryCharge nc di/dt = /µs t on Forward TurnOn Time Intrinsic turnon time is negligible (turnon is dominated by L S L ) Specification changes Rev. # Parameters Old spec. New spec. Comments Revision ate V GS(th) (Max.) 2.5V No spec. Removed V GS(th) (Max). Specification //96 V GS (Max.) ±20 ±6 ecrease V GS (Max). Specification //96 Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. ) V = 5V, starting T J = 25 C, L = 3mH R G = 25Ω, I S = 4.6. (See Figure 2) ƒ I S 4.6, di/dt /µs, V V (BR)SS, T J 50 C Pulse width 300µs; duty cycle 2%. 2

3 I, raintosource Current () VGS TOP 5V V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 3.0V 3.0V I, raintosource Current () VGS TOP 5V V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 3.0V 3.0V 20µs PULSE WITH T J = 25 C 0. V S, raintosource Voltage (V) 20µs PULSE WITH T J = 50 C 0. V S, raintosource Voltage (V) Fig. Typical Output Characteristics Fig 2. Typical Output Characteristics I, raintosource Current () T J = 25 C T J = 50 C V S= V 20µs PULSE W ITH V GS, GatetoSource Voltage (V) R S(on), raintosource On Resistance (Norm alized) I = 4.6 V GS = V T J, Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized OnResistance Vs. Temperature 3

4 C, Capacitance (pf) C iss C oss C rss V GS = 0V, f = MHz C iss = C gs C gd, C ds SHORTE C rss = C gd C oss = C ds C gd 0 V S, raintosource Voltage (V) V, GatetoSource Voltage (V) GS I = 4.6 V S = 24V V S = 5V FOR TEST CIRCUIT 0 SEE FIGURE Q G, Total Gate Charge (nc) Fig 5. Typical Capacitance Vs. raintosource Voltage Fig 6. Typical Gate Charge Vs. GatetoSource Voltage I S, Reverse rain Current () T J = 50 C T J = 25 C I, rain Current () OPERTION IN THIS RE LIMITE BY R S(on) µs ms V GS = 0V V S, Sourcetorain Voltage (V) T = 25 C T J = 50 C ms Single P u lse 0. V S, raintosource Voltage (V) Fig 7. Typical Sourcerain iode Forward Voltage Fig 8. Maximum Safe Operating rea 4

5 Q G V S R V Q GS Q G R G V GS.U.T. V G V V Charge Pulse Width µs uty Factor 0. % Fig 9a. Basic Gate Charge Waveform Fig a. Switching Time Test Circuit Current Regulator Same Type as.u.t. V S 2V.2µF 50KΩ.3µF 90% V GS.U.T. V S % V GS t d(on) t r t d(off) t f 3m 0 I G I Current Sampling Resistors Fig 9b. Gate Charge Test Circuit Fig b. Switching Time Waveforms Thermal Response (Z thj ) 0. = S ING LE PU LS E (THERML RESPONSE) 2. Peak T J = P Mx Z thj T t, Rectangular Pulse uration (sec) Notes:. uty factor = t / t 2 Fig. Maximum Effective Transient Thermal Impedance, Junctiontombient P M t t 2 5

6 R G VS 20V tp L.U.T I S 0.0Ω Fig 2a. Unclamped Inductive Test Circuit tp 5V RIVER V (BR)SS V E S, Single Pulse valanche Energy (mj) I TOP BOTTOM 4.6 V = 5V Starting T J, Junction Temperature ( C) Fig 2c. Maximum valanche Energy Vs. rain Current I S Fig 2b. Unclamped Inductive Waveforms 6

7 Peak iode Recovery dv/dt Test Circuit.U.T ƒ Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer R G dv/dt controlled by R G river same type as.u.t. I S controlled by uty Factor "".U.T. evice Under Test V river Gate rive Period P.W. = P.W. Period V GS =V *.U.T. I S Waveform Reverse Recovery Current Body iode Forward Current di/dt.u.t. V S Waveform iode Recovery dv/dt V Repplied Voltage Inductor Curent Body iode Forward rop Ripple 5% I S * V GS = 5V for Logic Level evices Fig 3. For NChannel HEXFETS 7

8 Package Outline SOT223 (TO26) Outline Part Marking Information SOT223 EXMPLE : THIS IS N IRFL04 INTERNTIONL RECTIFIER LOGO FL04 34 TOP PRT NUMBER W FER LO T CO E TE COE (YWW) Y = LST IGIT OF THE YER WW = WEEK XXXXXX BOTTOM 8

9 Tape & Reel Information SOT223 Outline TR 2.05 (.080).95 (.077) 4. (.6) 3.90 (.54).85 (.072).65 (.065) 0.35 (.03) 0.25 (.0) 7.55 (.297) 7.45 (.294) 7.60 (.299) 7.40 (.292) 6.30 (.64) 5.70 (.69).60 (.062).50 (.059) TYP. FEE IRECTION 2. (.475).90 (.469) 7. (.279) 6.90 (.272) 2.30 (.090) 2. (.083) NOTES :. CONTROLLING IMENSION: MILLIMETER. 2. OUTLINE CONFORMS TO EI48 & EI ECH O (3.00) REEL CONTINS 2,500 EVICES (.59) 2.80 (.504) 5.40 (.607).90 (.469) (3.000) MX (.969) M IN. NOTES :. OUTLINE COMFORMS TO EI CONTROLLING IMENSION: MILLIMETER.. 3. IMENSION HUB. 4. INCLUES FLNGE OUTER EGE (.566) 2.40 (.488) (.724) M X. 4 WORL HEQURTERS: 233 Kansas St., El Segundo, California 90245, Tel: (3) IR GRET BRITIN: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: IR CN: 5 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) IR GERMNY: Saalburgstrasse 57, 6350 Bad Homburg Tel: IR ITLY: Via Liguria 49, 7 Borgaro, Torino Tel: IR FR EST: K&H Bldg., 2F, 304 NishiIkebukuro 3Chome, ToshimaKu, Tokyo Japan 7 Tel: IR SOUTHEST SI: Kim Seng Promenade, Great World City West Tower, 3, Singapore Tel: IR TIWN:6 Fl. Suite. 207, Sec. 2, Tun Haw South Road, Taipei, 673, Taiwan Tel: ata and specifications subject to change without notice. /99 9