C Soldering Temperature, for 10 seconds 300 (1.6mm from case )
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1 l Logic-Level Gate Drive l dvanced Process Technology l Surface Mount (IRLZ24NS) l Low-profile through-hole (IRLZ24NL) l 75 C Operating Temperature l Fast Switching l Fully valanche Rated Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. The D 2 Pak is a surface mount power package capable of accommodating die sizes up to HEX-4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The D 2 Pak is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0W in a typical surface mount application. The through-hole version (IRLZ24NL) is available for lowprofile applications. bsolute Maximum Ratings PD E IRLZ24NS/L HEXFET Power MOSFET 2 D Pak TO-262 V DSS = 55V R DS(on) = 0.06Ω I D = 8 Parameter Max. Units I T C = 25 C Continuous Drain Current, V 0V 8 I T C = 00 C Continuous Drain Current, V 0V 3 I DM Pulsed Drain Current 72 P = 25 C Power Dissipation 3.8 W P C = 25 C Power Dissipation 45 W Linear Derating Factor 0.30 W/ C V GS Gate-to-Source Voltage ±6 V E S Single Pulse valanche Energy 68 mj I R valanche Current E R Repetitive valanche Energy 4.5 mj dv/dt Peak Diode Recovery dv/dt ƒ 5.0 V/ns T J Operating Junction and -55 to 75 T STG Storage Temperature Range C Soldering Temperature, for 0 seconds 300 (.6mm from case ) Thermal Resistance Parameter Typ. Max. Units R θjc Junction-to-Case 3.3 C/W R θj Junction-to-mbient ( PCB Mounted,steady-state)** 40 G D S 5/2/98
2 Electrical T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)DSS Drain-to-Source Breakdown Voltage 55 V V GS = 0V, I D = 250µ V (BR)DSS / T J Breakdown Voltage Temp. Coefficient 0.06 V/ C Reference to 25 C, I D = m V GS = 0V, I D = R DS(on) Static Drain-to-Source On-Resistance Ω V GS = 5.0V, I D = 0.05 V GS = 4.0V, I D = 9.0 V GS(th) Gate Threshold Voltage V V DS = V GS, I D = 250µ g fs Forward Transconductance 8.3 S V DS = 25V, I D = I DSS Drain-to-Source Leakage Current 25 V DS = 55V, V GS = 0V µ 250 V DS = 44V, V GS = 0V, T J = 50 C I GSS Gate-to-Source Forward Leakage 00 V GS = 6V n Gate-to-Source Reverse Leakage -00 V GS = -6V Q g Total Gate Charge 5 I D = Q gs Gate-to-Source Charge 3.7 nc V DS = 44V Q gd Gate-to-Drain ("Miller") Charge 8.5 V GS = 5.0V, See Fig. 6 and 3 t d(on) Turn-On Delay Time 7. V DD = 28V t r Rise Time 74 I D = ns t d(off) Turn-Off Delay Time 20 R G = 2Ω, V GS = 5.0V t f Fall Time 29 R D = 2.4Ω, See Fig. 0 L S Internal Source Inductance 7.5 nh Between lead, and center of die contact C iss Input Capacitance 480 V GS = 0V C oss Output Capacitance 30 pf V DS = 25V C rss Reverse Transfer Capacitance 6 ƒ =.0MHz, See Fig. 5 Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions D I S Continuous Source Current MOSFET symbol 8 (Body Diode) showing the G I SM Pulsed Source Current integral reverse 72 (Body Diode) p-n junction diode. S V SD Diode Forward Voltage.3 V T J = 25 C, I S =, V GS = 0V t rr Reverse Recovery Time ns T J = 25 C, I F = Q rr Reverse Recovery Charge nc di/dt = 00/µs t on Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L S L D ) Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. ) V DD = 25V, starting T J = 25 C, L = 790µH R G = 25Ω, I S =. (See Figure 2) ƒ I SD, di/dt 290/µs, V DD V (BR)DSS, T J 75 C Pulse width 300µs; duty cycle 2%. Uses IRLZ24N data and test conditions ** When mounted on " square PCB ( FR-4 or G-0 Material ). For recommended footprint and soldering techniques refer to application note #N-994.
3 I D, Drain-to-Source Current () 00 0 VGS TOP 5V 2V 0V 8.0V 6.0V 4.0V 3.0V BOTTOM 2.5V 2.5V 20µs PULSE W IDTH 0. T J = 25 C V DS, Drain-to-Source Voltage (V) I D, Drain-to-Source Current () 00 0 VGS TOP 5V 2V 0V 8.0V 6.0V 4.0V 3.0V BOTTOM 2.5V 2.5V 20µs PULSE W IDTH 0. T J = 75 C V DS, Drain-to-Source Voltage (V) Fig. Typical Output Characteristics Fig 2. Typical Output Characteristics I D, Drain-to-Source Current () 00 0 T = 25 C J V DS= 5V 20µs PULSE W IDTH V GS T = 75 C J, Gate-to-Source Voltage (V) R DS(on), Drain-to-Source On Resistance (Normalized) I D = 8 V GS = 0V T J, Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature
4 C, Capacitance (pf) C iss C oss C rss V GS = 0V, f = MHz C iss = C gs C gd, C ds SHORTED C rss = C gd C oss = C ds C gd V, Gate-to-Source Voltage (V) GS I D = V DS = 44V V DS = 28V V DS, Drain-to-Source Voltage (V) FOR TEST CIRCUIT 0 SEE FIGURE Q, Total Gate Charge (nc) G Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage I SD, Reverse Drain Current () 00 0 T = 75 C J T = 25 C J I D, Drain Current () OPERTION IN THIS RE LIMITED BY R DS(on) 0µs 00µs V GS = 0V V SD, Source-to-Drain Voltage (V) T C = 25 C ms T J = 75 C Single P u lse 0ms 0 00 V DS, Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating rea
5 20 V DS R D I D, D rain Current (m ps) T C, Case Temperature ( C) Fig 9. Maximum Drain Current Vs. Case Temperature Fig 0a. Switching Time Test Circuit V DS 90% R G V GS 5.0V Pulse Width µs Duty Factor 0. % D.U.T. 0% V GS t d(on) t r t d(off) t f Fig 0b. Switching Time Waveforms - V DD 0 Therm al Response (Z thjc ) 0. D = SINGLE PULSE (THERML RESPONSE) 2. Peak T J = P DMx Z thjc T C t, Rectangular Pulse Duration (sec) Notes:. Duty factor D = t / t 2 P DM t t 2 Fig. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6 L V DS D.U.T. R G V - DD 5.0 V I S t p 0.0Ω Fig 2a. Unclamped Inductive Test Circuit V (BR)DSS t p V DD E S, Single Pulse valanche Energy (mj) I D TOP BOTTOM V DD = 25V Starting T J, Junction Temperature ( C) V DS I S Fig 2b. Unclamped Inductive Waveforms Fig 2c. Maximum valanche Energy Vs. Drain Current Current Regulator Same Type as D.U.T. 50KΩ 0 V Q GS Q G Q GD 2V.2µF.3µF D.U.T. V - DS V G V GS 3m Charge I G I D Current Sampling Resistors Fig 3a. Basic Gate Charge Waveform Fig 3b. Gate Charge Test Circuit
7 Peak Diode Recovery dv/dt Test Circuit IRLZ24NS/L D.U.T ƒ - Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer - - R G dv/dt controlled by R G Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test - V DD Driver Gate Drive Period P.W. D = P.W. Period V GS =0V * D.U.T. I SD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. V DS Waveform Diode Recovery dv/dt V DD Re-pplied Voltage Inductor Curent Body Diode Forward Drop Ripple 5% I SD * V GS = 5V for Logic Level Devices Fig 4. For N-Channel HEXFETS
8 D 2 Pak Package Outline.40 (.055) M X (.45) 0.29 (.405) (.85) 4.20 (.65) - B -.32 (.052).22 (.048) 0.6 (.400) REF (.255) 6.8 (.243).78 (.070).27 (.050) (.60) 4.73 (.580) 2.79 (.0) 2.29 (.090) 5.28 (.208) 4.78 (.88) 2.6 (.03) 2.32 (.09) 3X.40 (.055).4 (.045) 5.08 (.200) 3X 0.93 (.037) 0.69 (.027) 0.55 (.022) 0.46 (.08).39 (.055).4 (.045) 8.89 (.350) REF (.00) M B M MINIMUM RECOMMENDED FOOTPRINT.43 (.450) NOTES: DIMENSIONS FTER SOLDER DIP. 2 DIMENSIONING & TOLERNCING PER NSI Y4.5M, CONTROLLING DIMENSION : INCH. 4 HETSINK & LED DIMENSIONS DO NOT INCLUDE BURRS. LED SSIGNMENTS - GTE 2 - DRIN 3 - SOURCE 8.89 (.350) 3.8 (.50) 7.78 (.700) 2.08 (.082) 2X 2.54 (.00) 2X Part Marking Information D 2 Pak INTERNTIONL RECTIFIER LOGO SSEMBLY LOT CODE F530S B M PRT NUMBER DTE CODE (YYW W ) YY = YER WW = WEEK
9 Package Outline TO-262 Outline Part Marking Information TO-262
10 Tape & Reel Information D 2 Pak TRR.60 (.063).50 (.059) 4.0 (.6) 3.90 (.53).60 (.063).50 (.059) (.045) (.035) FEED DIRECTION.85 (.073).65 (.065).60 (.457).40 (.449) 5.42 (.609) 5.22 (.60) (.957) (.94) TRL 0.90 (.429) 0.70 (.42) 6.0 (.634) 5.90 (.626).75 (.069).25 (.049) 4.72 (.36) 4.52 (.78) FEED DIRECTION 3.50 (.532) 2.80 (.504) (.079) (.94) (4.73) MX (2.362) MIN. NOTES :. COMFORMS TO EI CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION HUB. 4. INCLUDES FLNGE OUTER EDGE (.039) (.96) (.97) MX. 4 WORLD HEDQURTERS: 233 Kansas St., El Segundo, California 90245, Tel: (30) EUROPEN HEDQURTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: IR CND: 732 Victoria Park ve., Suite 20, Markham, Ontario L3R 2Z8, Tel: (905) IR GERMNY: Saalburgstrasse 57, 6350 Bad Homburg Tel: IR ITLY: Via Liguria 49, 007 Borgaro, Torino Tel: IR FR EST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 7 Tel: IR SOUTHEST SI: 35 Outram Road, #0-02 Tan Boon Liat Building, Singapore 036 Tel: Data and specifications subject to change without notice. 5/98
C Soldering Temperature, for 10 seconds 300 (1.6mm from case )
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l dvanced Process Technology l ynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully valanche Rated l Lead-Free escription Fifth Generation HEXFETs from International Rectifier utilize
More informationSMPS MOSFET. V DSS Rds(on) max I D
Applications l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed power switching l This device is only for through hole application. SMPS MOSFET PD 984A IRFSL9N60A HEXFET Power
More informationSMPS MOSFET. V DSS R DS(on) max I D
SMPS MOSFET PD - 9506A IRFR8N5DPbF IRFU8N5DPbF HEXFET Power MOSFET Applications High frequency DC-DC converters Lead-Free l l V DSS R DS(on) max I D 50V 0.25Ω 8A Benefits l Low Gate to Drain Charge to
More informationIRL1404SPbF IRL1404LPbF
l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description Seventh Generation HEXFET power
More informationSMPS MOSFET. V DSS R DS(on) max I D
PD - 95355A SMPS MOSFET IRFR5N20DPbF IRFU5N20DPbF HEXFET Power MOSFET Applications High frequency DC-DC converters Lead-Free l l V DSS R DS(on) max I D 200V 65Ω 7A Benefits Low Gate-to-Drain Charge to
More informationSMPS MOSFET. V DSS R DS(on) max I D
SMPS MOSFET Applications l Switch Mode Power Supply (SMPS) l Motor Drive l Bridge Converters l All Zero Voltage Switching Benefits l Low Gate Charge Qg results in Simple Drive Requirement l Improved Gate,
More informationIRFR24N15DPbF IRFU24N15DPbF
PD - 95370B IRFR24N5DPbF IRFU24N5DPbF Applications l High frequency DC-DC converters HEXFET Power MOSFET S R DS(on) max I D 50V 95mΩ 24A Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l
More informationSMPS MOSFET. V DSS R DS(on) max I D
PD - 95353A SMPS MOSFET IRFR12N25DPbF IRFU12N25DPbF HEXFET Power MOSFET Applications High frequency DC-DC converters Lead-Free l l V DSS R DS(on) max I D 250V 0.26Ω 14A Benefits Low Gate-to-Drain Charge
More informationIRF3808S IRF3808L HEXFET Power MOSFET
Typical Applications Integrated Starter Alternator 42 Volts Automotive Electrical Systems Benefits Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating G 175 C Operating Temperature
More informationC Soldering Temperature, for 10 seconds 300 (1.6mm from case )
l dvanced Process Technology l Surface Mount (IRF9Z34NS) l Lowprofile throughhole (IRF9Z34NL) l 175 C Operating Temperature l Fast Switching l PChannel l Fully valanche Rated escription G P 9.1525 IRF9Z34NS/L
More informationSMPS MOSFET. V DSS R DS(on) max I D
pplications l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply l High Speed Power Switching l High Voltage Isolation = 2.5KVRMS Benefits l Low Gate Charge Qg results in Simple Drive Requirement
More informationPRELIMINARY. Storage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case )
PRELIMINRY PD- 9.336 IRFR/U024N HEXFET Power MOSFET Utra Low On-Resistance Surface Mount (IRFR024N) Straight Lead (IRFU024N) dvanced Process Technoogy Fast Switching Fuy vaanche Rated G D S V DSS = 55V
More informationPRELIMINARY. C Soldering Temperature, for 10 seconds 300 (1.6mm from case )
l dvanced Process Technology l Ultra Low OnResistance l Surface Mount l ynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully valanche Rated escription PRELIMINRY Fifth Generation HEXFETs
More informationSMPS MOSFET. V DSS R DS(on) max I D
Applications l High frequency DC-DC converters SMPS MOSFET PD- 93805B IRFB31N20D IRFS31N20D IRFSL31N20D HEXFET Power MOSFET V DSS R DS(on) max I D 200V 0.082Ω 31A Benefits l Low Gate-to-Drain Charge to
More informationSMPS MOSFET. V DSS R DS(on) max I D
SMPS MOSFET Applications l Switch Mode Power Supply (SMPS) l Motor Drive l Bridge Converters l All Zero Voltage Switching l Lead-Free Benefits l Low Gate Charge Qg results in Simple Drive Requirement l
More informationV DSS = 55V. R DS(on) = 0.040Ω I D = 28A
PD- 937C IRLR/U2705 HEXFET Power MOSFET Logic-Leve Gate Drive Utra Low On-Resistance Surface Mount (IRLR2705) Straight Lead (IRLU2705) dvanced Process Technoogy Fast Switching Fuy vaanche Rated G D S V
More informationDescription Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Parameter Min. Typ. Max. Units
HEXFET Power MOSFET l dvanced Process Technology l ynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully valanche Rated l Lead-Free escription Fifth Generation HEXFET power MOSFETs
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SMPS MOSFET PD- 94048 IRFR220N IRFU220N HEXFET Power MOSFET Applications l High frequency DC-DC converters V DSS R DS(on) max (mω) I D 200V 600 5.0A Benefits l Low Gate to Drain Charge to Reduce Switching
More informationSMPS MOSFET. V DS 200 V V DS (Avalanche) min. 260 V R DS(ON) 10V 54 m: T J max 175 C TO-220AB. IRFB38N20DPbF
Applications High frequency DC-DC converters Plasma Display Panel Lead-Free l l l SMPS MOSFET Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including
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PD - 95514A IRFR34PbF IRFU34PbF HEXFET Power MOSFET Applications High frequency DC-DC converters Lead-Free l l V DSS R DS(on) max I D V 39mΩ 31A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses
More informationPRELIMINARY. C Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Surface Mount (IRFBC20S) Low-profie through-hoe (IRFBC20L) Avaiabe in Tape & Ree (IRFBC20S) Dynamic dv/dt Rating 150 C Operating Temperature Fast Switching Fuy Avaanche Rated PRELIMINARY G PD - 9.1014
More informationIRFR24N15D IRFU24N15D
Applications l High frequency DC-DC converters SMPS MOSFET PD - 94392 IRFR24N5D IRFU24N5D HEXFET Power MOSFET V DSS R DS(on) max I D 50V 95mΩ 24A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses
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PD- 94504 IRF1312 IRF1312S IRF1312L HEXFET Power MOSFET Applications High frequency DC-DC converters Motor Control Uninterrutible Power Supplies l l l V DSS R DS(on) max I D 80V 10mΩ 95A Benefits l Low
More informationIRF7341. HEXFET Power MOSFET V DSS = 55V. R DS(on) = 0.050Ω
l Generation V Technology l Ultra Low On-Resistance l Dual N-Channel Mosfet l Surface Mount l vailable in Tape & Reel l Dynamic dv/dt Rating l Fast Switching Description Fifth Generation HEXFETs from International
More informationC Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Logic-Leve Gate Drive dvanced Process Technoogy Surface Mount (IRL3303S) Low-profie through-hoe (IRL3303L) 75 C Operating Temperature Fast Switching Fuy vaanche Rated Description PD - 9.323B IRL3303S/L
More informationSMPS MOSFET. V DSS Rds(on) max I D
pplications l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed power switching SMPS MOSFET PD 9809B IRFBN50 HEXFET Power MOSFET V DSS Rds(on) max I D 500V 0.52Ω Benefits l
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Applications l High frequency DC-DC converters Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective C OSS to Simplify Design, (See App. Note
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PD- 9508 IRLR024NPbF IRLU024NPbF HEXFET Power MOSFET Logic-Leve Gate Drive Surface Mount (IRLR024N) Straight Lead (IRLU024N) dvanced Process Technoogy Fast Switching Fuy vaanche Rated Lead-Free G D S V
More informationSMPS MOSFET. V DSS Rds(on) max I D
SMPS MOSFET PD 980 pplications l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed power switching l High Voltage Isolation = 2.5KVRMS Benefits l Low Gate Charge Qg results
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l Generation V Technology l Ultra Low On-Resistance l Dual P-Channel Mosfet l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching Description Fifth Generation HEXFETs from
More informationTO-220AB low package cost of the TO-220 contribute to its wide acceptance throughout the industry.
l Logic-Level Gate Drive l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description Fifth
More informationSMPS MOSFET. V DSS R DS(on) max I D
Absolute Maximum Ratings SMPS MOSFET Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Server Processor
More informationSMPS MOSFET. V DSS R DS(on) max I D
SMPS MOSFET PD - 94357A IRFB52N15D IRFS52N15D IRFSL52N15D HEXFET Power MOSFET Applications l High frequency DC-DC converters V DSS R DS(on) max I D 150V 0.032Ω 60A Benefits Low Gate-to-Drain Charge to
More informationSMPS MOSFET. V DSS R DS(on) max I D
Absolute Maximum Ratings SMPS MOSFET Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Server Processor
More informationIRF7555. HEXFET Power MOSFET V DSS = -20V. R DS(on) = 0.055Ω
Trench Technology Ultra Low On-Resistance Dual P-Channel MOSFET Very Small SOIC Package Low Profile (
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Typical Applications l Industrial Motor Drive Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche
More informationSMPS MOSFET. V DSS R DS(on) max I D A I DM. 320 P C = 25 C Power Dissipation 260 Linear Derating Factor. V/ns T J
Applications l High frequency DC-DC converters l UPS and Motor Control SMPS MOSFET Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective C
More informationSMPS MOSFET. V DSS R DS(on) max I D
Absolute Maximum Ratings SMPS MOSFET Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Server Processor
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l Co-packaged HEXFET Power MOSFET and Schottky iode l P-Channel HEXFET l Low V F Schottky Rectifier l Generation 5 Technology l Micro8 TM Footprint escription S G FETKY 2 3 TM 4 5 Top View The FETKY TM
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SMPS MOSFET PD - 95536 IRFB23N20DPbF IRFS23N20DPbF IRFSL23N20DPbF HEXFET Power MOSFET Applications High frequency DC-DC converters Lead-Free l l V DSS R DS(on) max I D 200V 0.Ω 24A Benefits Low Gate-to-Drain
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l Ultra Low OnResistance l PChannel l Surface Mount (IRFR54) l Straight Lead (IRFU54) l Advanced Process Technology l Fast Switching G l Fully Avalanche Rated l LeadFree Description Fifth Generation HEXFETs
More informationP C = 100 C Power Dissipation Linear Derating Factor
PDP SWITCH PD - 97228 IRFI4228PbF Features l dvanced Process Technology l Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch pplications l Low E PULSE Rating to Reduce Power Dissipation
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