IRL3102. HEXFET Power MOSFET V DSS = 20V. R DS(on) = 0.013Ω I D = 61A PRELIMINARY
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1 l l l l dvanced Process Technology Optimized for 4.5V-7.V Gate Drive Ideal for CPU Core DC-DC Converters Fast Switching Description These HEXFET Power MOSFETs were designed specifically to meet the demands of CPU core DC-DC converters in the PC environment. dvanced processing techniques combined with an optimized gate oxide design results in a die sized specifically to offer maximum efficiency at minimum cost. PRELIMINRY G PD IRL32 HEXFET Power MOSFET D S V DSS = 2V R DS(on) =.3Ω I D = 6 The TO-22 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 5 watts. The low thermal resistance and low package cost of the TO- 22 contribute to its wide acceptance throughout the industry. bsolute Maximum Ratings Parameter Max. Units I T C = 25 C Continuous Drain Current, V 4.5V 6 I T C = C Continuous Drain Current, V 4.5V 39 I DM Pulsed Drain Current 24 P C = 25 C Power Dissipation 89 W Linear Derating Factor.7 W/ C V GS Gate-to-Source Voltage ± V V GSM Gate-to-Source Voltage 4 V (Start Up Transient, tp = µs) E S Single Pulse valanche Energy 22 mj I R valanche Current 35 E R Repetitive valanche Energy 8.9 mj dv/dt Peak Diode Recovery dv/dt ƒ 5. V/ns T J Operating Junction and -55 to + 5 T STG Storage Temperature Range C Soldering Temperature, for seconds 3 (.6mm from case ) Mounting torque, 6-32 or M3 srew lbf in (.N m) Thermal Resistance TO-22B Parameter Typ. Max. Units R θjc Junction-to-Case.4 R θcs Case-to-Sink, Flat, Greased Surface.5 C/W R θj Junction-to-mbient 62 /8/97
2 IRL32 Electrical T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)DSS Drain-to-Source Breakdown Voltage 2 V V GS = V, I D = 25µ V (BR)DSS / T J Breakdown Voltage Temp. Coefficient.6 V/ C Reference to 25 C, I D = m R DS(on) Static Drain-to-Source On-Resistance.5 V GS = 4.5V, I D = 37 Ω.3 V GS = 7.V, I D = 37 V GS(th) Gate Threshold Voltage.7 V V DS = V GS, I D = 25µ g fs Forward Transconductance 36 S V DS = 6V, I D = 35 I DSS Drain-to-Source Leakage Current 25 V DS = 2V, V GS = V µ 25 V DS = V, V GS = V, T J = 5 C I GSS Gate-to-Source Forward Leakage V GS = V n Gate-to-Source Reverse Leakage - V GS = -V Q g Total Gate Charge 58 I D = 35 Q gs Gate-to-Source Charge 4 nc V DS = 6V Q gd Gate-to-Drain ("Miller") Charge 2 V GS = 4.5V, See Fig. 6 t d(on) Turn-On Delay Time V DD = V t r Rise Time 3 I ns D = 35 t d(off) Turn-Off Delay Time 8 R G = 9.Ω, V GS = 4.5V t f Fall Time R D =.28Ω, Between lead, L D Internal Drain Inductance 4.5 6mm (.25in.) nh from package L S Internal Source Inductance 7.5 and center of die contact G C iss Input Capacitance 25 V GS = V C oss Output Capacitance pf V DS = 5V C rss Reverse Transfer Capacitance 36 ƒ =.MHz, See Fig. 5 D S Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions D I S Continuous Source Current MOSFET symbol 6 (Body Diode) showing the G I SM Pulsed Source Current integral reverse 24 (Body Diode) p-n junction diode. S V SD Diode Forward Voltage.3 V T J = 25 C, I S = 37, V GS = V t rr Reverse Recovery Time ns T J = 25 C, I F = 35 Q rr Reverse Recovery Charge 6 nc di/dt = /µs t on Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L S +L D ) Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting T J = 25 C, L =.36mH R G = 25Ω, I S = 35. ƒ I SD 35, di/dt /µs, V DD V (BR)DSS, T J 5 C Pulse width 3µs; duty cycle 2%.
3 IRL32 I D, Drain-to-Source Current () VGS TOP 5V V 2V 8.V V 8.V 6.V 6.V 4.V 4.V 3.V BOTTOM 3.V 2.5V BOTTOM 2.5V 2.5V I D, Drain-to-Source Current () VGS TOP 5V V 2V 8.V V 8.V 6.V 6.V 4.V 4.V 3.V BOTTOM 3.V 2.5V BOTTOM 2.5V 2.5V 2µs PULSE WIDTH T J = 25 C. 2µs PULSE WIDTH T J = 5 C. Fig. Typical Output Characteristics Fig 2. Typical Output Characteristics I D, Drain-to-Source Current () T J = 25 C T J = 5 C V DS= 5V 2µs PULSE WIDTH V GS, Gate-to-Source Voltage (V) R DS(on), Drain-to-Source On Resistance (Normalized) 2. I D = V GS = 4.5V T J, Junction Temperature( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature
4 IRL32 C, Capacitance (pf) VGS = V, f = MHz Ciss = Cgs + Cgd, C ds Crss = Cgd Coss = Cds + Cgd C iss C oss C rss SHORTED V GS, Gate-to-Source Voltage (V) I D = 35 V DS = 6V Q G, Total Gate Charge (nc) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage I SD, Reverse Drain Current () T J = 5 C T J = 25 C V GS = V V SD,Source-to-Drain Voltage (V) I D, Drain Current () OPERTION IN THIS RE LIMITED BY R DS(on) us ms ms TC = 25 C TJ = 5 C Single Pulse Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating rea
5 IRL32 I D, Drain Current () T C, Case Temperature ( C) E S, Single Pulse valanche Energy (mj) TOP BOTTOM I D Starting T, Junction Temperature( J C) Fig 9. Maximum Drain Current Vs. Case Temperature Fig. Maximum valanche Energy Vs. Drain Current Thermal Response (Z thjc ). D = SINGLE PULSE (THERML RESPONSE) Notes:. Duty factor D = t / t 2 2. Peak T J = P DM x Z thjc + TC t, Rectangular Pulse Duration (sec) PDM t t2 Fig. Maximum Effective Transient Thermal Impedance, Junction-to-Case
6 IRL32 ( Ω ) R DS (on), Drain-to-Source On Resistance VGS = 4.5V VGS = 7.V I D, Drain Current () R DS(on), Drain-to-Source On Resistance ( Ω ) V GS I D = 6, Gate-to-Source Voltage (V) Fig 2. On-Resistance Vs. Drain Current Fig 3. On-Resistance Vs. Gate Voltage
7 Package Outline TO-22B Outline Dimensions are shown in millimeters (inches) IRL (.3) 2.62 (.3).54 (.45).29 (.45) 3.78 (.49) 3.54 (.39) (.85) 4.2 (.65) - B -.32 (.52).22 (.48) 5.24 (.6) 4.84 (.584) 4.9 (.555) 3.47 (.53) (.255) 6. (.24).5 (.45) MIN 4.6 (.6) 3.55 (.4) LED SSIGNMENTS - GTE 2 - DR IN 3 - SOURCE 4 - DR IN 3X.4 (.55).5 (.45) 2.54 (.) 2X NOTES: 3X.93 (.37).69 (.27).36 (.4) M B M.55 (.22) 3X.46 (.8) 2.92 (.5) 2.64 (.4) DIMENSIONING & TOLERNCING PER NSI Y4.5M, OUTLINE CONFORMS TO JEDEC OUTLINE TO-22B. 2 CON TR OLLING DIMENSION : INC H 4 HETSINK & LE D MESUREMENTS DO NOT INCLUDE BURRS. Part Marking Information TO-22B EXMPLE EXMPLE : THIS : THIS N IS N IRF IRF WITH WITH SSEMBLY LOT LOT CODE CODE 9BM 9BM INTERNTIONL RECTIFIER RECTIFIER IRF IRF LOGO LOGO B 9B M M SSEMBLY LOT LOT CODE CODE PRT PRT NUMBER NUMBER DTE DTE CODE CODE (YYW (YYW W ) W ) YY YY = YER = YER WW WW = WEEK = WEEK WORLD HEDQURTERS: 233 Kansas St., El Segundo, California 9245, Tel: (3) EUROPEN HEDQURTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: IR CND: 732 Victoria Park ve., Suite 2, Markham, Ontario L3R 2Z8, Tel: (95) IR GERMNY: Saalburgstrasse 57, 635 Bad Homburg Tel: IR ITLY: Via Liguria 49, 7 Borgaro, Torino Tel: IR FR EST: K&H Bldg., 2F, 3-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 7 Tel: IR SOUTHEST SI: 35 Outram Road, #-2 Tan Boon Liat Building, Singapore 36 Tel: Data and specifications subject to change without notice. /97
PRELIMINARY. C Soldering Temperature, for 10 seconds 300 (1.6mm from case )
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l Ultra Low OnResistance l Surface Mount (IRFR5305) l Straight Lead (IRFU5305) l dvanced Process Technology l Fast Switching l Fully valanche Rated Description Fifth Generation HEXFETs from International
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IRF3808 AUTOMOTIVE MOSFET Typical Applications HEXFET Power MOSFET Integrated Starter Alternator D 42 Volts Automotive Electrical Systems V DSS = 75V Benefits Advanced Process Technology R DS(on) = 0.007Ω
More informationIRFZ48NS IRFZ48NL HEXFET Power MOSFET
l Advanced Process Technology l Surface Mount (IRFZ48NS) l Low-profile through-hole (IRFZ48NL) l 75 C Operating Temperature l Fast Switching l Fully Avalanche Rated Description Advanced HEXFET Power MOSFETs
More informationDescription Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Ratings Parameter Min. Typ. Max Units
l davanced Process Technology l Ultra Low On-Resistance l Dual N-Channel MOSFET l Surface Mount l vailable in Tape & Reel l Dynamic dv/dt Rating l Fast Switching l Lead-Free Description Fourth Generation
More informationStorage Temperature Range Soldering Temperature, for 10 seconds 300 (1.6mm from case )
l l l l l Surface Mount (IRFR20N) Straight Lead (IRFU20N) dvanced Process Technology Fast Switching Fully valanche Rated escription Fifth Generation HEXFETs from International Rectifier utilize advanced
More informationSMPS MOSFET. V DSS R DS(on) max I D
Applications l l l l Switch Mode Power Supply (SMPS) Uninterruptible Power Supply High Speed Power Switching Lead-Free SMPS MOSFET PD - 9546 HEXFET Power MOSFET V DSS R DS(on) max I D 650V 0.93Ω 8.5A Benefits
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P- 93842B SMPS MOSFET IRF7455 HEXFET Power MOSFET pplications V SS R S(on) max I l High Frequency C-C Converters with Synchronous Rectification 30V 0.0075Ω 15 Benefits l l l Ultra-Low R S(on) at 4.5V V
More informationSMPS MOSFET. V DSS R DS(on) max I D
Benefits l Ultra-Low Gate Impedance l l Very Low R DS(on) Fully Characterized Avalanche Voltage and Current SMPS MOSFET Applications l High Frequency DC-DC Isolated Converters with Synchronous Rectification
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SMPS MOSFET PD - 9506A IRFR8N5DPbF IRFU8N5DPbF HEXFET Power MOSFET Applications High frequency DC-DC converters Lead-Free l l V DSS R DS(on) max I D 50V 0.25Ω 8A Benefits l Low Gate to Drain Charge to
More informationSMPS MOSFET. V DSS R DS(on) max I D
Benefits l Applications l l Ultra-Low Gate Impedance SMPS MOSFET High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial use High Frequency Buck Converters for
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l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description Seventh Generation HEXFET power
More informationSMPS MOSFET. V DSS R DS (on) max I D
Applications l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High Speed Power Switching SMPS MOSFET PD 987A IRFS9N60A HEXFET Power MOSFET V DSS R DS (on) max I D 600V 0.75Ω 9.2A Benefits
More informationC Soldering Temperature, for 10 seconds 300 (1.6mm from case )
PD -95487A Typical Applications l Industrial Motor Drive Benefits l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax
More informationIRF1704 Benefits AUTOMOTIVE MOSFET
AUTOMOTIVE MOSFET PD 94012C Benefits HEXFET Power MOSFET l 200 C Operaing Temperature l Advanced Process Technology D V DSS = 40V l Ultra Low OnResistance l Dynamic dv/dt Rating l Fast Switching R DS(on)
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l Advanced Process Technology l Ultra Low OnResistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Optimized for SMPS Applications Description Advanced
More informationDescription Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Parameter Min. Typ. Max. Units
Logic-Leve Gate Drive dvanced Process Technoogy Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fuy vaanche Rated Lead-Free Description Fifth Generation HEXFETs from Internationa Rectifier
More informationl Advanced Process Technology TO-220AB IRF630N
l Advanced Process Technology l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements Description Fifth Generation
More informationAUTOMOTIVE MOSFET. C Soldering Temperature, for 10 seconds 300 (1.6mm from case )
PD -95487 Typical Applications 42 Volts Automotive Electrical Systems Electrical Power Steering (EPS) Integrated Starter Alternator Lead-Free Benefits Ultra Low On-Resistance Dynamic dv/dt Rating 75 C
More informationSMPS MOSFET. V DSS R DS(on) max I D
SMPS MOSFET PD 93918 IRF3703 Applications Synchronous Rectification Active ORing l l HEXFET Power MOSFET V DSS R DS(on) max I D 30V 2.8mΩ 2A Benefits l Ultra Low OnResistance l Low Gate Impedance to Reduce
More informationParameter Maximum Units
l Co-packaged HEXFET Power MOSFET and Schottky iode l P-Channel HEXFET l Low V F Schottky Rectifier l Generation 5 Technology l Micro8 TM Footprint escription S G FETKY 2 3 TM 4 5 Top View The FETKY TM
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SMPS MOSFET PD 980 pplications l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed power switching l High Voltage Isolation = 2.5KVRMS Benefits l Low Gate Charge Qg results
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dvanced Process Technoogy Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching PChanne Fuy vaanche Rated Description Fifth Generation HEXFETs from Internationa Rectifier utiize advanced processing
More informationl Advanced Process Technology
l Advanced Process Technology D l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully Avalanche Rated G l Ease of Paralleling l Simple Drive Requirements S l Lead-Free Description
More informationDescription Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Parameter Typ. Max. Units
Advanced Process Technoogy Optimized for 4.5V Gate Drive Idea for CPU Core DC-DC Converters 150 C Operating Temperature Fast Switching Lead-Free Description These HEXFET Power MOSFETs were designed specificay
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Absolute Maximum Ratings SMPS MOSFET Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Server Processor
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Applications l High frequency DC-DC converters Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective C OSS to Simplify Design, (See App. Note
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PD - 95355A SMPS MOSFET IRFR5N20DPbF IRFU5N20DPbF HEXFET Power MOSFET Applications High frequency DC-DC converters Lead-Free l l V DSS R DS(on) max I D 200V 65Ω 7A Benefits Low Gate-to-Drain Charge to
More informationHEXFET Power MOSFET V DSS = 40V. R DS(on) = Ω I D = 130A
l Logic-Level Gate Drive l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Lead-Free Description Fifth
More informationC Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Typical Applications l Industrial Motor Drive Benefits l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche
More informationSMPS MOSFET. V DSS R DS(on) max I D
SMPS MOSFET PD - 95536 IRFB23N20DPbF IRFS23N20DPbF IRFSL23N20DPbF HEXFET Power MOSFET Applications High frequency DC-DC converters Lead-Free l l V DSS R DS(on) max I D 200V 0.Ω 24A Benefits Low Gate-to-Drain
More informationSMPS MOSFET. V DSS R DS(on) typ. Trr typ. I D. 500V 0.125Ω 170ns 34A
Applications Zero Voltage Switching SMPS Telecom and Server Power Supplies Uninterruptible Power Supplies Motor Control applications SMPS MOSFET Features and Benefits SuperFast body diode eliminates the
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Applications l Switch Mode Power Supply ( SMPS ) l Uninterruptable Power Supply l High speed power switching l This device is only for through hole application. SMPS MOSFET PD 984A IRFSL9N60A HEXFET Power
More informationDescription Absolute Maximum Ratings ( TA = 25 C Unless Otherwise Noted) Symbol Maximum Units
P - 9480B IRF733 Generation V Technoogy Utra Low On-Resistance ua N-Channe MOSFET Surface Mount Fuy vaanche Rated S G S2 G2 HEXFET Power MOSFET 2 3 4 8 7 6 5 2 2 V SS = 30V R S(on) = 0.029Ω escription
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