IRF3315 APPROVED. HEXFET Power MOSFET V DSS = 150V. R DS(on) = 0.07Ω I D = 27A

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1 l l l l l Advanced Process Technology Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fully Avalanche Rated Description Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve extremely low onresistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. G IRF335 HEXFET Power MOSFET D S PD 9623A V DSS = 50V R DS(on) = 0.07Ω I D = 27A The TO220 package is universally preferred for all commercialindustrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO 220 contribute to its wide acceptance throughout the industry. TO220AB Absolute Maximum Ratings Parameter Max. Units I T C = 25 C Continuous Drain Current, V V 27 I T C = 0 C Continuous Drain Current, V V 9 A I DM Pulsed Drain Current 8 P C = 25 C Power Dissipation 36 W Linear Derating Factor 0.9 W/ C V GS GatetoSource Voltage ± 20 V E AS Single Pulse Avalanche Energy 350 mj I AR Avalanche Current 2 A E AR Repetitive Avalanche Energy 3.6 mj dv/dt Peak Diode Recovery dv/dt ƒ 2.5 V/ns T J Operating Junction and 55 to 75 T STG Storage Temperature Range C Soldering Temperature, for seconds 300 (.6mm from case ) Mounting torque, 632 or M3 srew lbf in (.N m) Thermal Resistance Parameter Typ. Max. Units R θjc JunctiontoCase. R θcs CasetoSink, Flat, Greased Surface 0.50 C/W R θja JunctiontoAmbient /09/98

2 IRF335 Electrical T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)DSS DraintoSource Breakdown Voltage 50 V V GS = 0V, I D = 250µA V (BR)DSS/ T J Breakdown Voltage Temp. Coefficient 0.87 V/ C Reference to 25 C, I D = ma R DS(on) Static DraintoSource OnResistance 0.07 Ω V GS = V, I D = 2A V GS(th) Gate Threshold Voltage V V DS = V GS, I D = 250µA g fs Forward Transconductance.4 S V DS = 50V, I D = 2A I DSS DraintoSource Leakage Current 25 V µa DS = 50V, V GS = 0V 250 V DS = 20V, V GS = 0V, T J = 25 C I GSS GatetoSource Forward Leakage 0 V GS = 20V na GatetoSource Reverse Leakage 0 V GS = 20V Q g Total Gate Charge 95 I D = 2A Q gs GatetoSource Charge nc V DS = 20V Q gd GatetoDrain ("Miller") Charge 47 V GS = V, See Fig. 6 and 3 t d(on) TurnOn Delay Time 9.6 V DD = 75V t r Rise Time 32 I D = 2A ns t d(off) TurnOff Delay Time 49 R G = 5.Ω t f Fall Time 38 R D = 5.9Ω, See Fig. Between lead, L D Internal Drain Inductance 4.5 6mm (0.25in.) nh G from package L S Internal Source Inductance 7.5 and center of die contact C iss Input Capacitance 300 V GS = 0V C oss Output Capacitance 300 pf V DS = 25V C rss Reverse Transfer Capacitance 60 ƒ =.0MHz, See Fig. 5 D S SourceDrain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions D I S Continuous Source Current MOSFET symbol 27 (Body Diode) showing the A G I SM Pulsed Source Current integral reverse 8 (Body Diode) pn junction diode. S V SD Diode Forward Voltage.3 V T J = 25 C, I S = 2A, V GS = 0V t rr Reverse Recovery Time ns T J = 25 C, I F = 2A Q rr Reverse Recovery Charge.2.7 µc di/dt = 0A/µs t on Forward TurnOn Time Intrinsic turnon time is negligible (turnon is dominated by L S L D ) Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. ) Starting T J = 25 C, L = 4.9mH R G = 25 Ω, I AS = 2A. (See Figure 2) ƒ I SD 2A, di/dt 40A/µs, V DD V (BR)DSS, T J 75 C Pulse width 300µs; duty cycle 2%. 2

3 IRF335 I D, DraintoSource Current (A) 00 0 VGS TOP 5V V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 4.5V I D, DraintoSource Current (A) 00 0 VGS TOP 5V V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 4.5V 20µs PULSE WIDTH T J = 25 C 0. 0 V DS, DraintoSource Voltage (V) 20µs PULSE WIDTH T J = 75 C 0. 0 V DS, DraintoSource Voltage (V) Fig. Typical Output Characteristics Fig 2. Typical Output Characteristics I D, DraintoSource Current (A) 00 0 T J = 25 C T J = 75 C V DS= 50V 20µs PULSE WIDTH V GS, GatetoSource Voltage (V) R DS(on), DraintoSource On Resistance (Normalized) 3.0 I D = 27A V GS = V T J, Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized OnResistance Vs. Temperature 3

4 IRF335 C, Capacitance (pf) 3000 VGS = 0V, f = MHz Ciss = Cgs Cgd, C ds SHORTED C = 2500 rss Cgd Coss = Cds Cgd 2000 C iss 500 C oss 00 C rss V DS, DraintoSource Voltage (V) V GS, GatetoSource Voltage (V) I D = 2A V DS = 20V V DS = 75V V DS = 30V FOR TEST CIRCUIT SEE FIGURE Q G, Total Gate Charge (nc) Fig 5. Typical Capacitance Vs. DraintoSource Voltage Fig 6. Typical Gate Charge Vs. GatetoSource Voltage 0 00 OPERATION IN THIS AREA LIMITED BY R DS(on) I SD, Reverse Drain Current (A) T J = 75 C T J = 25 C V GS = 0 V V SD,SourcetoDrain Voltage (V) I D, Drain Current (A) 0 us 0us ms TC = 25 C TJ = 75 C ms Single Pulse 0 00 V DS, DraintoSource Voltage (V) Fig 7. Typical SourceDrain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4

5 IRF V DS R D 25 V GS D.U.T. R G I D, Drain Current (A) 20 5 V Pulse Width µs Duty Factor 0. % Fig a. Switching Time Test Circuit V DD 5 V DS 90% T C, Case Temperature ( C) Fig 9. Maximum Drain Current Vs. Case Temperature % V GS t d(on) t r t d(off) t f Fig b. Switching Time Waveforms Thermal Response (Z thjc ) 0. D = SINGLE PULSE t2 0.0 (THERMAL RESPONSE) Notes:. Duty factor D = t / t 2 2. Peak T J = P DM x Z thjc TC t, Rectangular Pulse Duration (sec) PDM t Fig. Maximum Effective Transient Thermal Impedance, JunctiontoCase 5

6 IRF335 R G V DS 20V tp Fig 2a. Unclamped Inductive Test Circuit L D.U.T I AS 0.0Ω 5V DRIVER V DD A E AS, Single Pulse Avalanche Energy (mj) I D TOP 4.9A 8.5A BOTTOM 2A Starting T, Junction Temperature ( J C) tp V (BR)DSS Fig 2c. Maximum Avalanche Energy Vs. Drain Current I AS Fig 2b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ Q G 2V.2µF.3µF V Q GS Q GD D.U.T. V DS V G V GS 3mA Charge I G I D Current Sampling Resistors Fig 3a. Basic Gate Charge Waveform Fig 3b. Gate Charge Test Circuit 6

7 IRF335 Peak Diode Recovery dv/dt Test Circuit D.U.T ƒ Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer R G dv/dt controlled by R G Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. Device Under Test V DD Driver Gate Drive Period P.W. D = P.W. Period V GS =V * D.U.T. I SD Waveform Reverse Recovery Current Body Diode Forward Current di/dt D.U.T. V DS Waveform Diode Recovery dv/dt V DD ReApplied Voltage Inductor Curent Body Diode Forward Drop Ripple 5% I SD * V GS = 5V for Logic Level Devices Fig 4. For NChannel HEXFETS 7

8 IRF335 Package Outline TO220AB Outline Dimensions are shown in millimeters (inches) 2.87 (.3) 2.62 (.3).54 (.45).29 (.405) 3.78 (.49) 3.54 (.39) A 4.69 (.85) 4.20 (.65) B.32 (.052).22 (.048) 5.24 (.600) 4.84 (.584) (.255) 6. (.240) (.045) M IN LEAD ASSIGNMENTS GATE 2 DRAIN 3 SOU RC E 4 DRAIN 4.09 (.555) 3.47 (.530) 4.06 (.60) 3.55 (.40) 3X.40 (.055).5 (.045) 2.54 (.0) 2X NOTES: 3X 0.93 (.037) 0.69 (.027) 0.36 (.04) M B A M 0.55 (.022) 3X 0.46 (.08) 2.92 (.5) 2.64 (.4) D IM E N S IO N IN G & TO L E R A N C ING P E R A N S I Y 4.5M, O U T LIN E C O N F O R M S TO JE D E C O U T LIN E TO 2 20 A B. 2 CONTROLLING DIMENSION : INCH 4 HEATSINK & LEAD MEASUREMENTS DO NOT INCLUDE BURRS. Part Marking Information TO220AB EXAMPLE : THIS IS AN IRF W ITH ASSEMBLY LOT CO DE 9BM INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE IRF B M PART NUMBER DATE CODE (YYWW ) YY = YEAR WW = WEEK A WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (3) EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: IR CANADA: 732 Victoria Park Ave., Suite 20, Markham, Ontario L3R 2Z8, Tel: (905) IR GERMANY: Saalburgstrasse 57, 6350 Bad Homburg Tel: IR ITALY: Via Liguria 49, 07 Borgaro, Torino Tel: IR FAR EAST: K&H Bldg., 2F, 304 NishiIkebukuro 3Chome, ToshimaKu, Tokyo Japan 7 Tel: IR SOUTHEAST ASIA: 35 Outram Road, #02 Tan Boon Liat Building, Singapore 036 Tel: Data and specifications subject to change without notice. 2/98 8

9 Note: For the most current drawings please refer to the IR website at: