IRFZ34N PD C. HEXFET Power MOSFET V DSS = 55V. R DS(on) = 0.040Ω I D = 29A. Thermal Resistance

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1 l dvanced Process Technology l Ultra Low On-Resistance l ynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Ease of Paralleling escription Fifth Generation HEXFETs from International Rectifier utilize advanced processing techniques to achieve the lowest possible on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are well known for, provides the designer with an extremely efficient device for use in a wide variety of applications. G P C IRFZ34N HEXFET Power MOSFET S SS = 55 R S(on) = 0.040Ω I = 29 The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 watts. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. bsolute Maximum Ratings TO-220B Parameter Max. Units T C = 25 C Continuous rain Current, 29 T C = 0 C Continuous rain Current, 20 I M Pulsed rain Current 0 C = 25 C Power issipation 68 W Linear erating Factor 0.45 W/ C GS Gate-to-Source oltage ± 20 E S Single Pulse valanche Energy 65 mj I R valanche Current 6 E R Repetitive valanche Energy 6.8 mj dv/dt Peak iode Recovery dv/dt ƒ 5.0 /ns T J Operating Junction and -55 to 75 T STG Storage Temperature Range C Soldering Temperature, for seconds 300 (.6mm from case ) Mounting torque, 6-32 or M3 srew lbf in (.N m) Thermal Resistance Parameter Min. Typ. Max. Units R θjc Junction-to-Case 2.2 R θcs Case-to-Sink, Flat, Greased Surface 0.50 C/W R θj Junction-to-mbient 62 8/25/97

2 Electrical T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions (BR)SS rain-to-source Breakdown oltage 55 GS = 0, I = 250µ (BR)SS / T J Breakdown oltage Temp. Coefficient / C Reference to 25 C, I = m R S(ON) Static rain-to-source On-Resistance Ω GS =, I = 6 GS(th) Gate Threshold oltage S = GS, I = 250µ g fs Forward Transconductance 6.5 S S = 25, I = 6 25 S = 55, GS = 0 I SS rain-to-source Leakage Current µ 250 S = 44, GS = 0, T J = 50 C Gate-to-Source Forward Leakage 0 GS = 20 I GSS n Gate-to-Source Reverse Leakage -0 GS = -20 Q g Total Gate Charge 34 I = 6 Q gs Gate-to-Source Charge 6.8 nc S = 44 Q gd Gate-to-rain ("Miller") Charge 4 GS =, See Fig. 6 and 3 t d(on) Turn-On elay Time 7.0 = 28 t r Rise Time 49 I = 6 ns t d(off) Turn-Off elay Time 3 R G = 8Ω t f Fall Time 40 R =.8Ω, See Fig. Between lead, L Internal rain Inductance 4.5 6mm (0.25in.) nh G from package L S Internal Source Inductance 7.5 and center of die contact C iss Input Capacitance 700 GS = 0 C oss Output Capacitance 240 pf S = 25 C rss Reverse Transfer Capacitance 0 ƒ =.0MHz, See Fig. 5 S Source-rain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current MOSFET symbol 29 (Body iode) showing the I SM Pulsed Source Current integral reverse G 0 (Body iode) p-n junction diode. S S iode Forward oltage.6 T J = 25 C, I S = 6, GS = 0 t rr Reverse Recovery Time ns T J = 25 C, I F = 6 Q rr Reverse Recovery Charge nc di/dt = 0/µs t on Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L S L ) Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. ) ƒ I S 6, di/dt 420/µs, (BR)SS, T J 75 C = 25, starting T J = 25 C, L = 4µH R G = 25Ω, I S = 6. (See Figure 2) Pulse width 300µs; duty cycle 2%.

3 I, rain-to-source C urrent ( ) 00 0 GS TOP BOTT OM I, rain-to-source C urrent () 00 0 GS TOP BOTTOM µs PULSE WITH 0. T C = 25 C 0. 0 S, rain-to-source oltage () 20µs PULSE WITH 0. T C = 75 C 0. 0 S, rain-to-source oltage () Fig. Typical Output Characteristics Fig 2. Typical Output Characteristics I, rain-to-source Current () 0 T = 25 C J S = 25 20µs PULSE W ITH GS T = 75 C J, Gate-to-Source oltage () R S(on), rain-to-source On R esistance (N orm alize d) I = GS = T J, Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance s. Temperature

4 C, Capacitance (pf) GS = 0, f = M Hz C iss = C gs C gd, C ds SHORTE C rss = C gd C is s C oss = C ds C gd C oss C rss 0 0 S, rain-to-source oltage (), G ate-to-source oltage ( ) GS I = 6 S = 44 S = 28 FOR TEST CIRCUIT 0 SEE FIGURE Q, Total Gate Charge (nc) G Fig 5. Typical Capacitance s. rain-to-source oltage Fig 6. Typical Gate Charge s. Gate-to-Source oltage I S, Reverse rain Current () 00 0 T = 75 C J T = 25 C J GS = S, Source-to-rain oltage () I, rain Current () 00 OPE RTION IN THIS RE LIMITE BY RS(on) 0 µs 0µs ms T C = 25 C T J = 75 C Single Pulse 0 S, rain-to-source oltage () Fig 7. Typical Source-rain iode Forward oltage Fig 8. Maximum Safe Operating rea

5 30 S R I, rain Current () R G GS Pulse Width µs uty Factor 0. %.U.T. Fig a. Switching Time Test Circuit T C, Case Temperature ( C) Fig 9. Maximum rain Current s. Case Temperature S 90% % GS t d(on) t r t d(off) t f Fig b. Switching Time Waveforms Thermal Response (Z thjc ) 0. = SINGLE PULSE (THERML RESPONSE) Notes:. uty factor = t / t 2 2. Peak T J=P Mx Z thjc T C t, Rectangular Pulse uration (sec) PM t t 2 Fig. Maximum Effective Transient Thermal Impedance, Junction-to-Case

6 L S.U.T. R G - I S t p 0.0Ω Fig 2a. Unclamped Inductive Test Circuit (BR)SS t p E S, S ingle P ulse valanche Energy (m J) I TOP 6.5 BOTTOM 6 = Starting T J, Junction Temperature ( C) S Fig 2c. Maximum valanche Energy s. rain Current I S Fig 2b. Unclamped Inductive Waveforms Current Regulator Same Type as.u.t. 50KΩ Q G 2.2µF.3µF Q GS Q G.U.T. - S GS G 3m Charge I G I Current Sampling Resistors Fig 3a. Basic Gate Charge Waveform Fig 3b. Gate Charge Test Circuit

7 Peak iode Recovery dv/dt Test Circuit.U.T ƒ - Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer - - R G dv/dt controlled by R G river same type as.u.t. I S controlled by uty Factor "".U.T. - evice Under Test - river Gate rive Period P.W. = P.W. Period GS = *.U.T. I S Waveform Reverse Recovery Current Body iode Forward Current di/dt.u.t. S Waveform iode Recovery dv/dt Re-pplied oltage Inductor Curent Body iode Forward rop Ripple 5% I S * GS = 5 for Logic Level evices Fig 4. For N-Channel HEXFETS

8 Package Outline TO-220B Outline imensions are shown in millimeters (inches) 2.87 (.3) 2.62 (.3) 5.24 (.600) 4.84 (.584) 4.09 (.555) 3.47 (.530).54 (.45).29 (.405) (.255) 6. (.240) 3.78 (.49) 3.54 (.39) (.045) MIN 4.06 (.60) 3.55 (.40) 4.69 (.85) 4.20 (.65) - B -.32 (.052).22 (.048) LE SSIGNMENTS - GTE 2 - RIN 3 - SOURCE 4 - RIN 3X.40 (.055).5 (.045) 2.54 (.0) 2X NOTES: Part Marking Information TO-220B 3X 0.93 (.037) 0.69 (.027) 0.36 (.04) M B M 0.55 (.022) 3X 0.46 (.08) 2.92 (.5) 2.64 (.4) IMENSIONING & TOLERNCING PER NSI Y4.5M, OUTLINE CONFORMS TO JEEC OUTLINE TO-220-B. 2 CONTROLLING IMENSION : INCH 4 HETSINK & LE MESUREMENTS O NOT INCLUE BURRS. EXMPLE : THIS IS N IRF W ITH SSEMBLY LOT COE 9BM INTERNTIONL RECTIFIER LOGO SSEMBLY LOT COE IRF B M PRT NUMBER TE COE (Y YW W ) YY = YER WW = WEEK WORL HEQURTERS: 233 Kansas St., El Segundo, California 90245, Tel: (3) EUROPEN HEQURTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: IR CN: 732 ictoria Park ve., Suite 20, Markham, Ontario L3R 2Z8, Tel: (905) IR GERMNY: Saalburgstrasse 57, 6350 Bad Homburg Tel: IR ITLY: ia Liguria 49, 07 Borgaro, Torino Tel: IR FR EST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 7 Tel: IR SOUTHEST SI: 35 Outram Road, #-02 Tan Boon Liat Building, Singapore 036 Tel: ata and specifications subject to change without notice. 8/97

9 Note: For the most current drawings please refer to the IR website at: