TO-220AB contribute to its wide acceptance throughout the industry.
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- Silvia Underwood
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1 dvanced Process Technoogy ynamic dv/dt Rating 75 C Operating Temperature Fast Switching PChanne Fuy vaanche Rated escription Fifth Generation HEXFETs from Internationa Rectifier utiize advanced processing techniques to achieve extremey ow onresistance per siicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET Power MOSFETs are we known for, provides the designer with an extremey efficient and reiabe device for use in a wide variety of appications. G P 9437B IRF9540N HEXFET Power MOSFET S V SS = 0V R S(on) = 0.7Ω I = 23 The TO220 package is universay preferred for a commerciaindustria appications at power dissipation eves to approximatey 50 watts. The ow therma resistance and ow package cost of the TO220 TO220B contribute to its wide acceptance throughout the industry. bsoute Maximum Ratings Parameter Max. Units T C = 25 C Continuous rain Current, V V 23 T C = 0 C Continuous rain Current, V V 6 I M Pused rain Current 76 C = 25 C Power issipation 40 W Linear erating Factor 0.9 W/ C V GS GatetoSource Votage ± 20 V E S Singe Puse vaanche Energy 430 mj I R vaanche Current E R Repetitive vaanche Energy 4 mj dv/dt Peak iode Recovery dv/dt ƒ 5.0 V/ns T J Operating Junction and 55 to 75 T STG Storage Temperature Range C Sodering Temperature, for seconds 300 (.6mm from case ) Mounting torque, 632 or M3 srew bf in (.N m) Therma Resistance Parameter Typ. Max. Units R θjc JunctiontoCase. R θcs CasetoSink, Fat, Greased Surface 0.50 C/W R θj Junctiontombient 62 5/3/98
2 Eectrica T J = 25 C (uness otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)SS raintosource Breakdown Votage 0 V V GS = 0V, I = 250µ V (BR)SS/ T J Breakdown Votage Temp. Coefficient 0. V/ C Reference to 25 C, I = m R S(on) Static raintosource OnResistance 0.7 Ω V GS = V, I = V GS(th) Gate Threshod Votage V V S = V GS, I = 250µ g fs Forward Transconductance 5.3 S V S = 50V, I = I SS raintosource Leakage Current 25 V µ S = 0V, V GS = 0V 250 V S = 80V, V GS = 0V, T J = 50 C I GSS GatetoSource Forward Leakage 0 V GS = 20V n GatetoSource Reverse Leakage 0 V GS = 20V Q g Tota Gate Charge 97 I = Q gs GatetoSource Charge 5 nc V S = 80V Q gd Gatetorain ("Mier") Charge 5 V GS = V, See Fig. 6 and 3 t d(on) TurnOn eay Time 5 V = 50V t r Rise Time 67 I = ns t d(off) TurnOff eay Time 5 R G = 5.Ω t f Fa Time 5 R = 4.2Ω, See Fig. Between ead, L Interna rain Inductance 4.5 6mm (0.25in.) nh G from package L S Interna Source Inductance 7.5 and center of die contact C iss Input Capacitance 300 V GS = 0V C oss Output Capacitance 400 pf V S = 25V C rss Reverse Transfer Capacitance 240 ƒ =.0MHz, See Fig. 5 S Sourcerain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current MOSFET symbo 23 (Body iode) showing the I SM Pused Source Current integra reverse G 76 (Body iode) pn junction diode. S V S iode Forward Votage.6 V T J = 25 C, I S =, V GS = 0V t rr Reverse Recovery Time ns T J = 25 C, I F = Q rr Reverse RecoveryCharge nc di/dt = 0/µs t on Forward TurnOn Time Intrinsic turnon time is negigibe (turnon is dominated by L S L ) Notes: Repetitive rating; puse width imited by max. junction temperature. ( See fig. ) Starting T J = 25 C, L = 7.mH R G = 25Ω, I S =. (See Figure 2) ƒ I S, di/dt 470/µs, V V (BR)SS, T J 75 C Puse width 300µs; duty cyce 2%.
3 I, raintosource Current () 0 VGS TOP 5V V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 4.5V 20µs PULSE WITH T Jc = 25 C 0. 0 V S, raintosource Votage (V) Fig. Typica Output Characteristics I, raintosource Current () 0 VGS TOP 5V V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.5V 4.5V 20µs PULSE W ITH T JC = 75 C 0. 0 V S, raintosource Votage (V) Fig 2. Typica Output Characteristics I, raintosource Current () 0 T = 25 C J T = 75 C J V S = 25V 20µs PULSE WITH V GS, GatetoSource Votage (V) R S(on), raintosource On Resistance (Norm aized) I = 9 V GS = V T J, Junction Temperature ( C) Fig 3. Typica Transfer Characteristics Fig 4. Normaized OnResistance Vs. Temperature
4 C, Capacitance (pf) V GS = 0V, f = MHz C iss = C gs C gd, C ds SHORTE C rss = C gd C oss = C ds C gd C iss C oss C rss 0 0 V S, raintosource Votage (V) V GS, GatetoSource Votage (V) I = V S = 80V V S = 50V V S = 20V FOR TEST CIRCUIT 0 SEE FIGURE Q G, Tota Gate Charge (nc) Fig 5. Typica Capacitance Vs. raintosource Votage Fig 6. Typica Gate Charge Vs. GatetoSource Votage I S, Reverse rain Current () 0 T = 75 C J T = 25 C J I, rain Current () 00 0 OPERTION IN THIS RE LIMITE BY R S(on) 0µs ms V GS = 0V V S, Sourcetorain Votage (V) T C = 25 C T ms J = 75 C Singe Puse 0 00 V S, raintosource Votage (V) Fig 7. Typica Sourcerain iode Forward Votage Fig 8. Maximum Safe Operating rea
5 25 V S R 20 R G V GS.U.T. V I, rain Current () 5 5 V Puse Width µs uty Factor 0. % Fig a. Switching Time Test Circuit V GS t d(on) t r t d(off) t f % T, Case Temperature ( C C) 90% V S Fig 9. Maximum rain Current Vs. Case Temperature Fig b. Switching Time Waveforms Therma Response (Z thjc ) 0. = SINGLE PULSE t2 0.0 (THERML RESPONSE) Notes:. uty factor = t / t 2 2. Peak T J = P M x Z thjc TC t, Rectanguar Puse uration (sec) PM t Fig. Maximum Effective Transient Therma Impedance, JunctiontoCase
6 Fig 2a. Uncamped Inductive Test Circuit I S V S L R G.U.T V IS 20V RIVER tp 0.0Ω 5V E S, Singe Puse vaanche Energy (mj) I TOP BOTTOM Starting T J, Junction Temperature ( C) tp Fig 2c. Maximum vaanche Energy Vs. rain Current V (BR)SS Fig 2b. Uncamped Inductive Waveforms Current Reguator Same Type as.u.t. V Q G 2V.2µF 50KΩ.3µF Q GS Q G.U.T. V S V G V GS 3m Charge I G I Current Samping Resistors Fig 3a. Basic Gate Charge Waveform Fig 3b. Gate Charge Test Circuit
7 Peak iode Recovery dv/dt Test Circuit IRF9540N.U.T* ƒ Circuit Layout Considerations Low Stray Inductance Ground Pane Low Leakage Inductance Current Transformer V GS R G dv/dt controed by R G I S controed by uty Factor "".U.T. evice Under Test V * Reverse Poarity of.u.t for PChanne river Gate rive Period P.W. = P.W. Period [ V GS =V ] ***.U.T. I S Waveform Reverse Recovery Current Reppied Votage Body iode Forward Current di/dt.u.t. V S Waveform iode Recovery dv/dt Inductor Curent Body iode Rippe 5% Forward rop [ V ] [ ] I S *** V GS = 5.0V for Logic Leve and 3V rive evices Fig 4. For PChanne HEXFETS
8 Package Outine TO220B Outine imensions are shown in miimeters (inches) 2.87 (.3) 2.62 (.3).54 (.45).29 (.405) 3.78 (.49) 3.54 (.39) 4.69 (.85) 4.20 (.65) B.32 (.052).22 (.048) 5.24 (.600) 4.84 (.584) (.255) 6. (.240) (.045) M IN LE SSIGNMENTS GTE 2 RIN 3 SOU RC E 4 RIN 4.09 (.555) 3.47 (.530) 4.06 (.60) 3.55 (.40) 3X.40 (.055).5 (.045) 2.54 (.0) 2X NOTES: 3X 0.93 (.037) 0.69 (.027) 0.36 (.04) M B M 0.55 (.022) 3X 0.46 (.08) 2.92 (.5) 2.64 (.4) IM E N S IO N IN G & TO L E R N C ING P E R N S I Y 4.5M, O U T LIN E C O N F O R M S TO JE E C O U T LIN E TO 2 20 B. 2 CONTROLLING IMENSION : INCH 4 HETSINK & LE MESUREMENTS O NOT INCLUE BURRS. Part Marking Information TO220B EXMPLE EXMPLE : THIS : THIS N IS N IRF IRF W ITH W ITH SSEMBLY LOT LOT CO COE 9BM 9BM INTERNTIONL RECTIFIER IRF IRF LOGO LOGO B 9B M M SSEMBLY LOT LOT COE E PRT PRT NUMBER NUMBER TE TE COE COE (YYWW (YYWW) ) YY YY = YER = YER WW WW = WEEK = WEEK WORL HEQURTERS: 233 Kansas St., E Segundo, Caifornia 90245, Te: (3) EUROPEN HEQURTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Te: IR CN: 732 Victoria Park ve., Suite 20, Markham, Ontario L3R 2Z8, Te: (905) IR GERMNY: Saaburgstrasse 57, 6350 Bad Homburg Te: IR ITLY: Via Liguria 49, 07 Borgaro, Torino Te: IR FR EST: K&H Bdg., 2F, 304 NishiIkebukuro 3Chome, ToshimaKu, Tokyo Japan 7 Te: IR SOUTHEST SI: 35 Outram Road, #02 Tan Boon Liat Buiding, Singapore 036 Te: ata and specifications subject to change without notice. 5/98
IRF9530N. HEXFET Power MOSFET V DSS = -100V. R DS(on) = 0.20Ω I D = -14A
dvanced Process Technoogy Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching PChanne Fuy vaanche Rated Description Fifth Generation HEXFETs from Internationa Rectifier utiize advanced processing
More informationTO-220AB contribute to its wide acceptance throughout the industry. Absolute Maximum Ratings
l LogicLevel Gate rive l dvanced Process Technology l ynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully valanche Rated escription Fifth Generation HEXFETs from International Rectifier
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dvanced Process Technoogy Utra Low OnResistance P Channe MOSFET Surface Mount vaiabe in Tape & Ree 50 C Operating Temperature LeadFree S S S G 2 3 IRF746QPbF 8 7 6 4 5 HEXFET Power MOSFET P 9624 V SS =
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l dvanced Process Technology l ynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully valanche Rated l Lead-Free escription Fifth Generation HEXFETs from International Rectifier utilize
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l l l l l dvanced Process Technology Isolated Package High Voltage Isolation = 2.5KVRMS Sink to Lead Creepage ist. = 4.8mm Fully valanche Rated escription Fifth Generation HEXFETs from International Rectifier
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HEXFET Power MOSFET l dvanced Process Technology l ynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully valanche Rated l Lead-Free escription Fifth Generation HEXFET power MOSFETs
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l Logic-Level Gate rive l dvanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage ist. = 4.8mm l Fully valanche Rated escription Fifth Generation HEXFETs
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l LogicLevel Gate rive l dvanced Process Technology l Isolated Package l High Voltage Isolation = 2.5KVRMS l Sink to Lead Creepage ist. = 4.8mm l Fully valanche Rated escription Fifth Generation HEXFETs
More informationC Soldering Temperature, for 10 seconds 300 (1.6mm from case )
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More informationC Soldering Temperature, for 10 seconds 300 (1.6mm from case )
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Surface Mount dvanced Process Technoogy Utra Low OnResistance Dynamic dv/dt Rating Fast Switching Fuy vaanche Rated Description Fifth Generation HEXFETs from Internationa Rectifier utiize advanced processing
More informationEN: This Datasheet is presented by the m anufacturer. Please v isit our website for pricing and availability at ore.hu.
EN: This Datasheet is presented by the m anufacturer. Pease v isit our website for pricing and avaiabiity at www.hest ore.hu. Advanced Process Technoogy Utra Low On-Resistance Dynamic dv/dt Rating 75 C
More informationDescription Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Ratings Parameter Typ. Max. Units
Generation V Technology l l Ultra Low OnResistance l PChannel Mosfet l Surface Mount l vailable in Tape & Reel l ynamic dv/dt Rating l Fast Switching escription Fifth Generation HEXFETs from International
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EN OF LIFE HEXFET Power MOSFET dvanced Process Technoogy Utra Low OnResistance P Channe MOSFET Surface Mount vaiabe in Tape & Ree 50 C Operating Temperature LeadFree escription These HEXFET Power MOSFET's
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l l l l l Advanced Process Technology Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fully Avalanche Rated Description Fifth Generation HEXFETs from International Rectifier utilize advanced
More informationEN: This Datasheet is presented by the m anufacturer. Please v isit our website for pricing and availability at ore.hu.
EN: This Datasheet is presented by the m anufacturer. Pease v isit our website for pricing and avaiabiity at www.hest ore.hu. Advanced Process Technoogy Utra Low On-Resistance Dynamic dv/dt Rating 75 C
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