1 SO-8 Top View Package Standard Pack EOL Base part number IRF7404QTRPbF SO-8 Tape and Reel 4000 EOL 527 IRF7404QPbF SO-8 Tube 95 EOL 529

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1 EN OF LIFE HEXFET Power MOSFET dvanced Process Technoogy Utra Low OnResistance P Channe MOSFET Surface Mount vaiabe in Tape & Ree 50 C Operating Temperature LeadFree escription These HEXFET Power MOSFET's in package utiize the astest processing techniques to achieve extremey ow onresistance per siicon area. dditiona features of these HEXFET Power MOSFET's are a 50 C junction operating temperature, fast switching speed and improved repetitive avaanche rating. These benefits combine to make this design an extremey efficient and reiabe device for use in a wide variety of appications. The efficient SO8 package provides enhanced therma characteristics making it idea in a variety of power appications. This surface mount SO8 can dramaticay reduce board space and is aso avaiabe in Tape & Ree. S S S G 2 3 Top View SO8 V SS = 20V R S(on) = 0.040Ω Base part number Orderabe part number Package Standard Pack EOL Type Form Quantity Notice IRF7404QTRPbF SO8 Tape and Ree 4000 EOL 527 SO8 Tube 95 EOL 529 Repacement Part Number Pease search the EOL part number on IR s website for guidance bsoute Maximum Ratings Parameter Max. Units T = 25 C Sec. Pused rain Current, V 4.5V 7.7 T = 25 C Continuous rain Current, V 4.5V 6.7 T = 70 C Continuous rain Current, V 4.5V 5.4 I M Pused rain Current 27 = 25 C Power issipation 2.5 W Linear erating Factor 0.02 W/ C V GS GatetoSource Votage ± 2 V dv/dt Peak iode Recovery dv/dt 5.0 V/ns T J, T STG Junction and Storage Temperature Range 55 to + 50 C Therma Resistance Ratings Parameter Typ. Max. Units R θj Maximum Junctiontombient 50 C/W 02//5

2 EN OF LIFE Eectrica T J = 25 C (uness otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)SS raintosource Breakdown Votage 20 V V GS = 0V, I = 250µ ΔV (BR)SS /ΔT J Breakdown Votage Temp. Coefficient 0.02 V/ C Reference to 25 C, I = m R S(ON) Static raintosource OnResistance V GS = 4.5V, I = 3.2 ƒ Ω V GS = 2.7V, I = 2.7 ƒ V GS(th) Gate Threshod Votage 0.70 V V S = V GS, I = 250µ g fs Forward Transconductance 6.8 S V S = 5V, I = 3.2 I SS raintosource Leakage Current.0 V S = 6V, V GS = 0V µ 25 V S = 6V, V GS = 0V, T J = 25 C GatetoSource Forward Leakage 0 V GS = 2V I GSS n GatetoSource Reverse Leakage 0 V GS = 2V Q g Tota Gate Charge 50 I = 3.2 Q gs GatetoSource Charge 5.5 nc V S = 6V Q gd Gatetorain ("Mier") Charge 2 V GS = 4.5V, See Fig. 6 and 2 ƒ t d(on) TurnOn eay Time 4 V = V t r Rise Time 32 I = 3.2 ns t d(off) TurnOff eay Time 0 R G = 6.0Ω t f Fa Time 65 R = 3.Ω, See Fig. ƒ L Interna rain Inductance 2.5 L S Interna Source Inductance 4.0 Between ead tip and center of die contact C iss Input Capacitance 500 V GS = 0V C oss Output Capacitance 730 pf V S = 5V C rss Reverse Transfer Capacitance 340 ƒ =.0MHz, See Fig. 5 Sourcerain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current MOSFET symbo 3. (Body iode) showing the I SM Pused Source Current integra reverse G 27 (Body iode) pn junction diode. S V S iode Forward Votage.0 V T J = 25 C, I S = 2.0, V GS = 0V ƒ t rr Reverse Recovery Time 69 0 ns T J = 25 C, I F = 3.2 Q rr Reverse RecoveryCharge 7 µc di/dt = 0/µs ƒ t on Forward TurnOn Time Intrinsic turnon time is negigibe (turnon is dominated by L S +L ) nh G S Notes: Repetitive rating; puse width imited by max. junction temperature. ( See fig. ) I S 3.2, di/dt 65/µs, V V (BR)SS, T J 50 C ƒ Puse width 300µs; duty cyce 2%. Surface mounted on FR4 board, t sec. 2

3 EN OF LIFE I, raintosource Current () 00 0 VGS TOP 7.5V 5.0V 4.0V 3.5V 3.0V 2.5V 2.0V BOTTOM.5V.5V I, raintosource Current () 00 0 VGS TOP 7.5V 5.0V 4.0V 3.5V 3.0V 2.5V 2.0V BOTTOM.5V.5V 20μs PULSE WITH 0. T J = 25 C V S, raintosource Votage (V) 20μs PULSE WITH 0. T J = 50 C V S, raintosource Votage (V) Fig. Typica Output Characteristics Fig 2. Typica Output Characteristics I, raintosource Current () 0 T J = 25 C T J = 50 C V S = 5V 20μs PULSE WITH V, GatetoSource Votage (V) GS R S(on), raintosource On Resistance (Normaized) I = 5.3 V GS = 4.5V T J, Junction Temperature ( C) Fig 3. Typica Transfer Characteristics Fig 4. Normaized OnResistance Vs. Temperature 3

4 EN OF LIFE C, Capacitance (pf) V GS = 0V, f = MHz C iss = C gs + C gd, C ds SHORTE C rss = Cgd C oss = C ds + Cgd C iss C oss C rss 0 0 V S, raintosource Votage (V) V GS, GatetoSource Votage (V) I = 3.2 V S = 6V FOR TEST CIRCUIT 0 SEE FIGURE Q G, Tota Gate Charge (nc) Fig 5. Typica Capacitance Vs. raintosource Votage Fig 6. Typica Gate Charge Vs. GatetoSource Votage I S, Reverse rain Current () 0 T = 50 C J T J = 25 C V GS = 0V V S, Sourcetorain Votage (V) I, rain Current () 0 OPERTION IN THIS RE LIMITE BY R S(on) ms ms T = 25 C TJ = 50 C Singe Puse 0. 0 V S, raintosource Votage (V) Fig 7. Typica Sourcerain iode Forward Votage Fig 8. Maximum Safe Operating rea 4

5 EN OF LIFE 8.0 V S R V GS.U.T. I, rain Current () Fig a. Switching Time Test Circuit V S 90% R G 4.5V Puse Width μs uty Factor 0.% V T C, Case Temperature ( C) Fig 9. Maximum rain Current Vs. mbient Temperature % V GS t d(on) t r t d(off) t f Fig b. Switching Time Waveforms 0 Therma Response (Z thj ) = SINGLE PULSE t2 (THERML RESPONSE) Notes:. uty factor = t / t 2 2. Peak T J= P M x Z thj + T t, Rectanguar Puse uration (sec) PM t Fig. Maximum Effective Transient Therma Impedance, Junctiontombient 5

6 EN OF LIFE Current Reguator Same Type as.u.t. 50KΩ 4.5 V Q GS Q G Q G 2V.2μF.3μF.U.T. + V S V G V GS 3m Charge I G I Current Samping Resistors Fig 2a. Basic Gate Charge Waveform Fig 2b. Gate Charge Test Circuit 6

7 EN OF LIFE Peak iode Recovery dv/dt Test Circuit.U.T + ƒ Circuit Layout Considerations Low Stray Inductance Ground Pane Low Leakage Inductance Current Transformer + + ** V GS * R G dv/dt controed by R G I S controed by uty Factor "".U.T. evice Under Test + * V * Reverse Poarity for PChanne ** Use PChanne river for PChanne Measurements river Gate rive Period P.W. = P.W. Period V GS =V [ ] ***.U.T. I S Waveform Reverse Recovery Current Reppied Votage Body iode Forward Current di/dt.u.t. V S Waveform iode Recovery dv/dt Inductor Curent Body iode Forward rop V [ ] Rippe 5% *** V GS = 5.0V for Logic Leve and 3V rive evices Fig 3. For PChanne HEXFETS I S [ ] 7

8 SO8 Package Outine imensions are shown in miimeters (inches) E 6 6X e B EN OF LIFE H 0.25 [.0] IM INCHES MILLIMETERS MIN MX MIN MX b c E e e H K L y BSIC.27 BSIC.025 BSIC BSIC e C y K x 45 SO8 Part Marking 8X b 0.25 [.0] C B 0. [.004] NOT ES :. IMENSIONING & TOLERNCING PER SME Y4.5M CONTROLLING IMENSION: MILLIMETER 3. IMENSIONS RE SHOWN IN MILLIMETERS [INCHES]. 4. OUTLINE CONFORMS TO JEEC OUTLINE MS IMENSION OES NOT INCLUE MOL PROTRUSIONS. MOL PROTRUSIONS NOT TO EXCEE 0.5 [.006]. 6 IMENSION OES NOT INCLUE MOL PROTRUSIONS. MOL PROTRUSIONS NOT TO EXCEE 0.25 [.0]. 7 IMENSION IS THE LENGTH OF LE FOR SOLERING TO SUBST RT E. 8X L [.255] 3X.27 [.050] 8X c F OOT PRINT 8X 0.72 [.028] 8X.78 [.070] EXMPLE: THIS IS N IRF7 (MOSFET ) INTERNTIONL RECTIFIER LOGO XXXX F7 TE COE (YWW) P = ESIGNTES LEFREE PROUCT (OPTIONL) Y = LST IGIT OF THE YER WW = WEEK = SSEMBLY SIT E COE LOT COE PRT NUMBER Notes:. For an utomotive Quaified version of this part pease see : 2. For the most current drawing pease refer to IR website at 8

9 EN OF LIFE SO8 Tape and Ree imensions are shown in miimeters (inches) TERMINL NUMBER 2.3 (.484 ).7 (.46 ) 8. (.38 ) 7.9 (.32 ) FEE IRECTION NOTES:. CONTROLLING IMENSION : MILLIMETER. 2. LL IMENSIONS RE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EI48 & EI (2.992) MX. NOTES :. CONTROLLING IMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EI48 & EI (.566 ) 2.40 (.488 ) For the most current drawing pease refer to IR website at 9

10 EN OF LIFE Quaification Information Quaification eve Moisture Sensitivity Leve RoHS Compiant Industria (per JEEC JES47F guideines) MSL SO8 (per JEEC JST020 ) Yes Quaification standards can be found at Internationa Rectifier s web site ppicabe version of JEEC standard at the time of product reease. Revision History ate Comments 2//205 dded ordering information to refect the EndOfife IR WORL HEQURTERS: N. Sepuveda Bvd., E Segundo, Caifornia 90245, US To contact Internationa Rectifier, pease visit