AUTOMOTIVE GRADE. Orderable Part Number AUIRF7416Q SO-8 Tape and Reel 4000 AUIRF7416QTR

Transcription

1 UTOMOTIVE GRE UIRF746Q Features dvanced Process Technology Low On-Resistance Logic Level Gate rive P Channel MOSFET ynamic dv/dt Rating 50 C Operating Temperature Fast Switching Fully valanche Rated Lead-Free, RoHS Compliant utomotive Qualified * S S S G Top View V SS -30V R S(on) max I -0 escription Specifically designed for utomotive applications, this cellular design of HEXFET Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in utomotive and a wide variety of other applications. SO-8 UIRF746Q G S Gate rain Source Standard Pack Base part number Package Type Orderable Part Number Form Quantity UIRF746Q SO-8 Tape and Reel 4000 UIRF746QTR bsolute Maximum Ratings Stresses beyond those listed under bsolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. mbient temperature (T) is 25 C, unless otherwise specified. Symbol Parameter Max. Units T = 25 C Continuous rain Current, V -0V -0 T = 70 C Continuous rain Current, V -0V -7. I M Pulsed rain Current -45 = 25 C Maximum Power issipation 2.5 W Linear erating Factor 0.02 mw /C V GS Gate-to-Source Voltage ± 20 V E S Single Pulse valanche Energy (Thermally Limited) 370 mj dv/dt Peak iode Recovery dv/dt -5.0 V/ns T J Operating Junction and -55 to + 50 Storage Temperature Range C T STG Thermal Resistance Symbol Parameter Typ. Max. Units R J Junction-to-mbient 50 C/W HEXFET is a registered trademark of Infineon. *Qualification standards can be found at

2 T J = 25 C (unless otherwise specified) UIRF746Q Parameter Min. Typ. Max. Units Conditions V (BR)SS rain-to-source Breakdown Voltage -30 V V GS = 0V, I = -250µ V (BR)SS / T J Breakdown Voltage Temp. Coefficient V/ C Reference to 25 C, I = -m R S(on) Static rain-to-source On-Resistance V GS = -0V, I = V GS = -4.5V, I = -2.8 V GS(th) Gate Threshold Voltage V V S = V GS, I = -250µ gfs Forward Trans conductance 5.6 S V S = -0V, I = -2.8 I SS rain-to-source Leakage Current -.0 V µ S = -24V, V GS = 0V -25 V S = -24V,V GS = 0V,T J = 25 C Gate-to-Source Forward Leakage -00 V I GSS n GS = -20V Gate-to-Source Reverse Leakage 00 V GS = 20V ynamic Electrical T J = 25 C (unless otherwise specified) Q g Total Gate Charge 6 92 I = -5.6 Q gs Gate-to-Source Charge nc V S = -24V Q gd Gate-to-rain Charge V GS = -0V, See Fig.6 & 9 t d(on) Turn-On elay Time 8 V = -5V t r Rise Time 49 I = -5.6 ns t d(off) Turn-Off elay Time 59 R G = 6.2 t f Fall Time 60 R = 2.7 See Fig.0 C iss Input Capacitance 700 V GS = 0V C oss Output Capacitance 890 pf V S = -25V C rss Reverse Transfer Capacitance 40 ƒ =.0MHz, See Fig.5 iode Characteristics Parameter Min. Typ. Max. Units Conditions Continuous Source Current MOSFET symbol I S -3. (Body iode) showing the Pulsed Source Current integral reverse I SM -45 (Body iode) p-n junction diode. V S iode Forward Voltage -.0 V T J = 25 C,I S = -5.6,V GS = 0V t rr Reverse Recovery Time ns T J = 25 C,I F = -5.6, Q rr Reverse Recovery Charge nc di/dt = 00/µs Notes: Repetitive rating; pulse width limited by max. junction temperature. (See Fig. ) Starting T J = 25 C, L = 25mH, R G = 25, I S = (See Fig. 2) I S -5.6, di/dt 00/µs, V V (BR)SS, T J 50 C. Pulse width 300µs; duty cycle 2%. Surface mounted on FR-4 board, t 0sec

3 UIRF746Q -I, rain-to-source Current () 00 0 VGS TOP - 5V - 0V - 7.0V - 5.5V - 4.5V - 4.0V - 3.5V BOTTOM - 3.0V -3.0V 20µs PULSE WITH T J = 25 C V S, rain-to-source Voltage (V) -I, rain-to-source Current () 00 0 VGS TOP - 5V - 0V - 7.0V - 5.5V - 4.5V - 4.0V - 3.5V BOTTOM - 3.0V -3.0V 20µs PULSE WITH T J = 50 C V S, rain-to-source Voltage (V) Fig. Typical Output Characteristics Fig. 2 Typical Output Characteristics -I, rain-to-source Current () 00 0 T J = 25 C T J = 50 C V, Gate-to-Source Voltage (V) GS V S = -0V 20µs PULSE WITH R S(on), rain-to-source On Resistance (Normalized) I = -5.6 V GS = -0V T J, Junction Temperature ( C) Fig. 3 Typical Transfer Characteristics Fig. 4 Normalized On-Resistance Vs. Temperature

4 UIRF746Q C, Capacitance (pf) V GS = 0V, f = MHz C iss = C gs + C gd, C ds SHORTE C rss = Cgd C oss = C ds + Cgd C iss C oss C rss V S, rain-to-source Voltage (V) -V GS, Gate-to-Source Voltage (V) I = -5.6 V S = -24V V S = -5V FOR TEST CIRCUIT 0 SEE FIGURE Q G, Total Gate Charge (nc) Fig 5. Typical Capacitance Vs. rain-to-source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage -I S, Reverse rain Current () 00 T J = 50 C 0 T J = 25 C V GS = 0V V S, Source-to-rain Voltage (V) -I I, rain Current () 00 0 OPERTION IN THIS RE LIMITE BY R S(on) 00us ms T = 25 C 0ms TJ = 50 C Single Pulse V S, rain-to-source Voltage (V) Fig. 7 Typical Source-rain iode Forward Voltage Fig 8. Maximum Safe Operating rea

5 UIRF746Q Fig 9a. Gate Charge Waveform Fig 0a. Switching Time Test Circuit Fig 9b. Gate Charge Test Circuit Fig 0b. Switching Time Waveforms 00 Thermal Response (Z thj ) 0 = SINGLE PULSE t2 (THERML RESPONSE) Notes:. uty factor = t / t 2 2. Peak T J= P M x Z thj + T t, Rectangular Pulse uration (sec) PM t Fig. Maximum Effective Transient Thermal Impedance, Junction-to-mbient

6 UIRF746Q Fig 2a. Unclamped Inductive Test Circuit E S, Single Pulse valanche Energy (mj) I TOP BOTTOM Starting T J, Junction Temperature ( C) o Fig 2c. Maximum valanche Energy vs. rain Current Fig 2b. Unclamped Inductive Waveforms

7 UIRF746Q Fig 3. Peak iode Recovery dv/dt Test Circuit for P-Channel HEXFET Power MOSFETs

8 UIRF746Q SO-8 Package Outline (imensions are shown in millimeters (inches) E 6 6X e B H 0.25 [.00] IM b E e e H K L y INCHES MIN MX BSIC.27 BSIC.025 BSIC BSIC MILLIMETERS MIN MX c e C y K x 45 8X b 0.25 [.00] C B 0.0 [.004] 8X L 7 8X c N O T E S :. IM EN SIO N IN G & TO LERN C IN G PER SM E Y4.5M C O N T R O L L IN G IM E N S IO N : M IL L IM E T E R 3. IM E N S IO N S R E S H O W N IN M IL L IM E T E R S [ IN C H E S ]. 4. O U T L IN E C O N F O R M S T O J E E C O U T L IN E M S IM E N S IO N O E S N O T IN C L U E M O L P R O T R U S IO N S. M O L PRO TRU SIO N S N O T TO EXC EE 0.5 [.006]. 6 IM E N S IO N O E S N O T IN C L U E M O L P R O T R U S IO N S. M O L PRO TRU SIO N S N O T TO EXC EE 0.25 [.00]. 7 IM EN SIO N IS TH E LEN G TH O F LE FO R SO L ERIN G TO S U B S T R T E [.255] 3X.27 [.050] F O O T P R IN T 8X 0.72 [.028] 8X.78 [.070] SO-8 Part Marking Information

9 UIRF746Q SO-8 Tape and Reel (imensions are shown in millimeters (inches) TERMINL NUMBER 2.3 (.484 ).7 (.46 ) 8. (.38 ) 7.9 (.32 ) FEE IRECTION NOTES:. CONTROLLING IMENSION : MILLIMETER. 2. LL IMENSIONS RE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EI-48 & EI (2.992) MX. NOTES :. CONTROLLING IMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EI-48 & EI (.566 ) 2.40 (.488 )

10 UIRF746Q Qualification Information utomotive (per EC-Q0) Qualification Level Comments: This part number(s) passed utomotive qualification. Infineon s Industrial and Consumer qualification level is granted by extension of the higher utomotive level. Moisture Sensitivity Level SO-8 MSL Machine Model Class M4 (+/- 425V) EC-Q0-002 ES Human Body Model Class HB (+/- 000V) EC-Q0-00 Charged evice Model Class C5 (+/- 25V) EC-Q0-005 RoHS Compliant Yes Highest passing voltage. Revision History ate Comments dded "Logic Level Gate rive" bullet in the features section on page 3/27/204 Updated part marking on page 6. Updated data sheet with new IR corporate template 9/30/205 Updated datasheet with corporate template Corrected ordering table on page. Published by Infineon Technologies G 8726 München, Germany Infineon Technologies G 205 ll Rights Reserved. IMPORTNT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics ( Beschaffenheitsgarantie ). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer s products and any use of the product of Infineon Technologies in customer s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( WRNINGS ue to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury