AUTOMOTIVE GRADE. Top View

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1 UTOMOTIVE GRE UIRF7207Q Features dvanced Process Technology Low On-Resistance Logic Level Gate rive P-Channel MOSFET ynamic dv/dt Rating 50 C Operating Temperature Fast Switching Fully valanche Rated Lead-Free, RoHS Compliant utomotive Qualified* S S S G Top View HEXFET Power MOSFET V SS -20V R S(on) max 0.06 I -5.4 escription Specifically designed for utomotive applications, this cellular design of HEXFET Power MOSFETs utilizes the latest processing techniques to achieve low on-resistance per silicon area. This benefit combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in utomotive and a wide variety of other applications. SO-8 Standard Pack Base part number Package Type Form Quantity Orderable Part Number UIRF7207Q SO-8 Tape and Reel 2500 UIRF7207QTR bsolute Maximum Ratings Stresses beyond those listed under bsolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only; and functional operation of the device at these or any other condition beyond those indicated in the specifications is not implied. Exposure to absolutemaximum-rated conditions for extended periods may affect device reliability. The thermal resistance and power dissipation ratings are measured under board mounted and still air conditions. mbient temperature (T) is 25 C, unless otherwise specified. Parameter Max. Units V S rain-to-source Voltage -20 V T = 25 C Continuous rain Current, V -0V -5.4 T = 70 C Continuous rain Current, V -0V -4.3 I M Pulsed rain Current -43 = 25 C Power issipation 2.5 = 70 C Power issipation.6 Linear erating Factor 0.02 W/ C V GS Gate-to-Source Voltage ± 2 V V GSM Gate-to-Source Voltage Single Pulse tp<0µs -6 V E S Single Pulse valanche Energy (Thermally Limited) 40 mj T J Operating Junction and -55 to + 50 Storage Temperature Range T STG Thermal Resistance Symbol Parameter Typ. Max. Units R J Junction-to-mbient 50 C/W HEXFET is a registered trademark of Infineon. *Qualification standards can be found at W C

2 Static Electrical T J = 25 C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units Conditions V (BR)SS rain-to-source Breakdown Voltage -20 V V GS = 0V, I = -250µ V (BR)SS / T J Breakdown Voltage Temp. Coefficient -0.0 V/ C Reference to 25 C, I = -m R S(on) Static rain-to-source On-Resistance 0.06 V GS = -4.5V, I = V GS = -2.7V, I = -2.7 V GS(th) Gate Threshold Voltage V V S = V GS, I = -250µ gfs Forward Transconductance 8.3 S V S = -0V, I = -5.4 I SS rain-to-source Leakage Current -.0 V S = -6V, V GS = 0V µ -25 V S = -6V, V GS = 0V, T J = 25 C I GSS Gate-to-Source Forward Leakage -00 V GS = 2V n Gate-to-Source Reverse Leakage 00 V GS = -2V ynamic Electrical T J = 25 C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units Conditions Q g Total Gate Charge 5 22 I = -5.4 Q gs Gate-to-Source Charge nc V S = -0V Q gd Gate-to-rain ("Miller") Charge V GS = -4.5V t d(on) Turn-On elay Time V = -0V t r Rise Time 24 I = -.0 ns t d(off) Turn-Off elay Time 43 R G = 6.0 t f Fall Time 4 R = 0 C iss Input Capacitance 780 V GS = 0V C oss Output Capacitance 40 pf V S = -5V C rss Reverse Transfer Capacitance 200 ƒ =.0 MHz iode Characteristics Symbol Parameter Min. Typ. Max. Units Conditions Continuous Source Current -3. MOSFET symbol I S (Body iode) showing the Pulsed Source Current -43 integral reverse I SM (Body iode) p-n junction diode. V S iode Forward Voltage -.0 V T J = 25 C, I S = -3., V GS = 0V dv/dt Peak iode Recovery 5.0 V/ns T J = 75 C, I S = -3., V S = -20V t rr Reverse Recovery Time ns T J = 25 C, I F = -3. Q rr Reverse Recovery Charge nc di/dt = 00/µs Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting T J = 25 C, L = 9.6mH, R G = 25, I S = I S -5.4, di/dt -79/µs, V V (BR)SS, T J 50 C. Pulse width 300µs; duty cycle 2%. When mounted on inch square copper board, t<0 sec

3 -I, rain-to-source Current () 00 0 TOP BOTTOM VGS -7.00V -5.00V -4.50V -3.50V -3.00V -2.70V -2.50V -2.25V -2.25V 20µs PULSE WITH T J = 25 C V S, rain-to-source Voltage (V) -I, rain-to-source Current () 00 0 TOP BOTTOM VGS -7.00V -5.00V -4.50V -3.50V -3.00V -2.70V -2.50V -2.25V -2.25V 20µs PULSE WITH T J = 50 C V S, rain-to-source Voltage (V) Fig. Typical Output Characteristics Fig. 2 Typical Output Characteristics I = I, rain-to-source Current () 0 T J = 25 C T J = 50 C V S = -0V 20µs PULSE WITH V GS, Gate-to-Source Voltage (V) R S(on), rain-to-source On Resistance (Normalized) V GS = -0V T J, Junction Temperature ( C) C, Capacitance (pf) Fig. 3 Typical Transfer Characteristics 600 VGS = 0V, f = MHz Ciss = Cgs + Cgd, C ds SHORTE Crss = Cgd Coss = Cds + Cgd 200 C iss 800 C oss 400 C rss V S, rain-to-source Voltage (V) Fig. 4 Normalized On-Resistance vs. Temperature -V GS, Gate-to-Source Voltage (V) I = -5.4 V S =-0V FOR TEST CIRCUIT SEE FIGURE Q G, Total Gate Charge (nc) Fig 5. Typical Capacitance vs. rain-to-source Voltage Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage

4 00 00 OPERTION IN THIS RE LIMITE BY R S(on) -I S, Reverse rain Current () 0 T J = 50 C T J = 25 C V GS = 0 V V S,Source-to-rain Voltage (V) -I I, rain Current () 00us 0 ms T = 25 C 0ms TJ = 50 C Single Pulse V S, rain-to-source Voltage (V) -I, rain Current () Fig. 7 Typical Source-to-rain iode Forward Voltage T C, Case Temperature ( C) E S, Single Pulse valanche Energy (mj) Fig 8. Maximum Safe Operating rea TOP BOTTOM I Starting T, Junction Temperature ( J C) Fig 9. Maximum rain Current vs. Case Temperature Fig 0. Maximum valanche Energy vs. rain Current 00 Thermal Response (Z thj ) 0 = Notes: SINGLE PULSE (THERML RESPONSE). uty factor =t / t 2 2. Peak T J= P M x Z thj + T t, Rectangular Pulse uration (sec) PM t t2 Fig 3. Maximum Effective Transient Thermal Impedance, Junction-to-Case

5 Fig 4. Peak iode Recovery dv/dt Test Circuit for P-Channel HEXFET Power MOSFETs Fig 4a. Unclamped Inductive Test Circuit Fig 4b. Unclamped Inductive Waveforms Fig 5a. Switching Time Test Circuit Fig 5b. Switching Time Waveforms Fig 6a. Gate Charge Test Circuit Fig 6b. Gate Charge Waveform

6 SO-8 Package Outline imensions are shown in millimeters (inches) E 6 6X e B H 0.25 [.00] IM b E e e H K L y INCHES MIN MX BSIC.27 BSIC.025 BSIC BSIC MILLIMETERS MIN MX c e C y K x 45 8X b 0.25 [.00] C B 0.0 [.004] 8X L 7 8X c N O T E S :. IM EN SIO N IN G & TO LERN C IN G PER SM E Y4.5M C O N T R O L L IN G IM E N S IO N : M IL L IM E T E R 3. IM E N S IO N S R E S H O W N IN M IL L IM E T E R S [ IN C H E S ]. 4. O U T L IN E C O N F O R M S T O J E E C O U T L IN E M S IM E N S IO N O E S N O T IN C L U E M O L P R O T R U S IO N S. M O L P R O T R U S IO N S N O T T O E X C E E 0. 5 [ ]. 6 IM E N S IO N O E S N O T IN C L U E M O L P R O T R U S IO N S. M O L P R O T R U S IO N S N O T T O E X C E E [.0 0 ]. 7 IM E N S IO N IS T H E L E N G T H O F L E F O R S O L E R IN G T O S U B S T R T E [.255] 3X.27 [.050] FO O TPRIN T 8X 0.72 [.028] 8X.78 [.070] SO-8 Part Marking Note: For the most current drawing please refer to IR website at

7 SO-8 Tape and Reel imensions are shown in millimeters (inches) TERMINL NUMBER 2.3 (.484 ).7 (.46 ) 8. (.38 ) 7.9 (.32 ) FEE IRECTION NOTES:. CONTROLLING IMENSION : MILLIMETER. 2. LL IMENSIONS RE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EI-48 & EI (2.992) MX. NOTES :. CONTROLLING IMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EI-48 & EI (.566 ) 2.40 (.488 ) Note: For the most current drawing please refer to IR website at

8 Qualification Information utomotive (per EC-Q0) Qualification Level Comments: This part number(s) passed utomotive qualification. Infineon s Industrial and Consumer qualification level is granted by extension of the higher utomotive level. Moisture Sensitivity Level SO-8 MSL Class MB (+/- 00V) Machine Model EC-Q0-002 ES Human Body Model Charged evice Model Class H (+/- 500V) EC-Q0-00 Class C5 (+/- 2000V) EC-Q0-005 RoHS Compliant Yes Highest passing voltage. Revision History ate Comments 4/3/204 dded "Logic Level Gate rive" bullet in the features section on page /6/205 Updated datasheet with corporate template Corrected ordering table on page. Published by Infineon Technologies G 8726 München, Germany Infineon Technologies G 205 ll Rights Reserved. IMPORTNT NOTICE The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics ( Beschaffenheitsgarantie ). With respect to any examples, hints or any typical values stated herein and/or any information regarding the application of the product, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party. In addition, any information given in this document is subject to customer s compliance with its obligations stated in this document and any applicable legal requirements, norms and standards concerning customer s products and any use of the product of Infineon Technologies in customer s applications. The data contained in this document is exclusively intended for technically trained staff. It is the responsibility of customer s technical departments to evaluate the suitability of the product for the intended application and the completeness of the product information given in this document with respect to such application. For further information on the product, technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies office ( WRNINGS ue to technical requirements products may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies office. Except as otherwise explicitly approved by Infineon Technologies in a written document signed by authorized representatives of Infineon Technologies, Infineon Technologies products may not be used in any applications where a failure of the product or any consequences of the use thereof can reasonably be expected to result in personal injury