FETKY MOSFET & Schottky Diode

Transcription

1 l Co-packaged HEXFET Power MOSFET and Schottky Diode l Ideal For Buck Regulator pplications l P-Channel HEXFET l Low V F Schottky Rectifier l SO-8 Footprint l Lead-Free Description The FETKY TM family of Co-packaged HEXFETs and Schottky diodes offer the designer an innovative board space saving solution for switching regulator and power management applications. HEXFETs utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. Combining this technology with International Rectifier's low forward drop Schottky rectifiers results in an extremely efficient device suitable for use in a wide variety of portable electronics applications. TM FETKY MOSFET & Schottky Diode 8 K S G K D D Top View PD V DSS = -55V R DS(on) = 5mΩ Schottky Vf = 0.6V The SO-8 has been modified through a customized leadframe for enhanced thermal characteristics. The SO-8 SO-8 package is designed for vapor phase, infrared or wave soldering techniques. bsolute Maximum Ratings (T = 25 C Unless Otherwise Noted) Parameter Maximum Units I T = 25 C Continuous Drain Current, V -V -3.4 I T = 70 C Continuous Drain Current, V -V -2.7 I DM Pulsed Drain Current À -27 P = 25 C Power Dissipation 2.0 W P = 70 C Power Dissipation.3 Linear Derating Factor 6 mw/ C V GS Gate-to-Source Voltage ± 20 V dv/dt Peak Diode Recovery dv/dt Á -5.0 V/ns T J, T STG Junction and Storage Temperature Range -55 to +50 C Thermal Resistance Symbol Parameter Typ. Max. Units R θjl Junction-to-Drain Lead, MOSFET 20 R θj Junction-to-mbient, MOSFET 62.5 C/W R θj Junction-to-mbient, SCHOTTKY 62.5 Notes: Repetitive rating pulse width limited by max. junction temperature (see fig. ) I SD -3.4, di/dt -50/µs, V DD V (BR)DSS, T J 50 C ƒ Pulse width 400µs duty cycle 2% Surface mounted on inch square copper board, t sec. /3/04

2 Electrical T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)DSS Drain-to-Source Breakdown Voltage -55 V V GS = 0V, I D = -250µ V (BR)DSS/ T J Breakdown Voltage Temp. Coefficient V/ C Reference to 25 C, I D = -m 95 5 V GS = -V, I D = -3.4 ƒ R DS(on) Static Drain-to-Source On-Resistance mω V GS = -4.5V, I D = -2.7 ƒ V GS(th) Gate Threshold Voltage -.0 V V DS = V GS, I D = -250µ g fs Forward Transconductance 3.3 S V DS = -V, I D = -3. I DSS Drain-to-Source Leakage Current -2.0 V DS = -44V, V GS = 0V µ -25 V DS = -44V, V GS = 0V, T J = 70 C I GSS Gate-to-Source Forward Leakage - V GS = -20V n Gate-to-Source Reverse Leakage V GS = 20V Q g Total Gate Charge I D = -3. Q gs Gate-to-Source Charge nc V DS = -44V Q gd Gate-to-Drain ("Miller") Charge V GS = -V, See Fig. 6 & 4 ƒ t d(on) Turn-On Delay Time 4 22 V DD = -28V t r Rise Time 5 I D = -.0 ns t d(off) Turn-Off Delay Time R G = 6.0Ω t f Fall Time V GS = -V, ƒ C iss Input Capacitance 690 V GS = 0V C oss Output Capacitance 2 pf V DS = -25V C rss Reverse Transfer Capacitance 86 ƒ =.0MHz, See Fig. 5 MOSFET Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current(Body Diode) -2.0 I SM Pulsed Source Current (Body Diode) -27 V SD Body Diode Forward Voltage -.2 V T J = 25 C, I S = -2.0, V GS = 0V t rr Reverse Recovery Time (Body Diode) ns T J = 25 C, I F = -2.0 Q rr Reverse Recovery Charge nc di/dt = /µs ƒ Schottky Diode Maximum Ratings Parameter Max. Units Conditions If (av) Max. verage Forward Current % Duty Cycle. Rectangular Wave, T = 57 C See Fig. 2 I SM Max. peak one cycle Non-repetitive 490 5µs sine or 3µs Rect. pulse Following any rated Surge current 70 ms sine or 6ms Rect. pulse load condition & with Vrrm applied Schottky Diode Electrical Specifications Parameter Max. Units Conditions Vfm Max. Forward Voltage Drop 0.6 If = 3.0, Tj = 25 C 0.76 If = 6.0, Tj = 25 C V 0.53 If = 3.0, Tj = 25 C 0.65 If = 6.0, Tj = 25 C Vrrm Max. Working Peak Reverse Voltage 60 V Irm Max. Reverse Leakage Current 2.0 m Vr = 60V Tj = 25 C 30 Tj = 25 C Ct Max. Junction Capacitance 45 pf Vr = 5Vdc ( khz to MHz) 25 C 2

3 -I D, Drain-to-Source Current () -I D, Drain-to-Source Current () Power Mosfet Characteristics VGS TOP -5V -V -6.0V -5.0V -4.5V -3.5V -3.0V BOTTOM -2.5V VGS TOP -5V -V - 6.0V -5.5V -4.5V -3.5V -3.0V BOTTOM - 2.5V -2.5V -2.5V 20µs PULSE WIDTH Tj = 25 C V DS, Drain-to-Source Voltage (V) 0. 20µs PULSE WIDTH Tj = 50 C 0. -V DS, Drain-to-Source Voltage (V) Fig. Typical Output Characteristics Fig 2. Typical Output Characteristics -I D, Drain-to-Source Current () T J= 25 C T J= 50 C V DS= -25V 20µs PULSE WIDTH V GS, Gate-to-Source Voltage (V) R DS(on), Drain-to-Source On Resistance (Normalized) 2.0 I D = V - GS = -V T J, Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 3

4 Power Mosfet Characteristics C, Capacitance (pf) VGS = 0V, f = MHz Ciss = Cgs + Cgd, C ds Crss = Cgd Coss = Cds + Cgd C iss C oss C rss SHORTED -V GS, Gate-to-Source Voltage (V) I D = -3. V DS =-48V V DS =-30V V DS =-2V 0 - -V DS, Drain-to-Source Voltage (V) Q G, Total Gate Charge (nc) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage -I SD, Reverse Drain Current () T J = 50 C T J = 25 C V GS = 0 V V SD,Source-to-Drain Voltage (V) -I D, Drain Current () OPERTION IN THIS RE LIMITED BY R DS(on) us us ms ms TC = 25 C TJ = 50 C Single Pulse 0. -V DS, Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating rea Forward Voltage 4

5 Power Mosfet Characteristics -I D, Drain Current () T C, Case Temperature ( C) % R G V GS V DS V GS Pulse Width µs Duty Factor 0. % R D D.U.T. V GS t d(on) t r t d(off) t f + - V DD Fig a. Switching Time Test Circuit Fig 9. Maximum Drain Current Vs. Case Temperature 90% V DS Fig b. Switching Time Waveforms Thermal Response (Z thj ) D = SINGLE PULSE (THERML RESPONSE) Notes:. Duty factor D = t / t 2 2. Peak T J= P DM x Z thj + T t, Rectangular Pulse Duration (sec) PDM t t2 Fig. Maximum Effective Transient Thermal Impedance, Junction-to-mbient 5

6 R DS(on), Drain-to -Source On Resistance ( R DS ( on ), Drain-to-Source On Resistance ( Power Mosfet Characteristics Ω) 0.25 Ω ) VGS = -4.5V I D = VGS = -V V GS, Gate -to -Source Voltage (V) I D, Drain Current ( ) Fig 2. Typical On-Resistance Vs. Gate Voltage Fig 3. Typical On-Resistance Vs. Drain Current Current Regulator Same Type as D.U.T. 50KΩ Q G 2V.2µF.3µF Q GS Q GD D.U.T. + V DS - V G V GS -3m Charge I G I D Current Sampling Resistors Fig 4a. Basic Gate Charge Waveform Fig 4b. Gate Charge Test Circuit 6

7 -V GS(th) ( V ) Power (W) Power Mosfet Characteristics I D = -250µ T J, Temperature ( C ) Time (sec) Fig 5. Typical Vgs(th) Vs. Junction Temperature Fig 6. Typical Power Vs. Time 7

8 Schottky Diode Characteristics T = 50 C J Instantaneous Forward Current - I F () T J= 50 C T J= 25 C T J= 25 C Reverse Current - I (m) R C C 75 C 50 C 25 C Reverse Voltage - V R(V) Fig. 8 - Typical Values of Reverse Current Vs. Reverse Voltage Forward Voltage Drop - V FM(V) Fig. 7 - Maximum Forward Voltage Drop Characteristics Junction Capacitance - C (pf) T T = 25 C J Reverse Voltage - V R(V) Fig. 9 - Typical Junction Capacitance Vs. Reverse Voltage 8

9 llowable mbient Temprature - ( C) Schottky Diode Characteristics Thermal Response(Z thj ) D = PDM 0.0 t t2 SINGLE PULSE Notes: (THERML RESPONSE). Duty factor D =t / t Peak T J=P DM x Z thj + T t, Rectangular Pulse Duration (sec) Fig 20. Maximum Effective Transient Thermal Impedance, Junction-to-mbient R thj = 62.5 C/W 20 DC see note (4) Square wave ( D = 0.50) 80 % Rated V R applied verage Forward Current - F(V) I () Fig.2 - Maximum llowable mbient Temp. Vs. Forward Current Note (4) Formula used: T C = T J - (Pd + Pd REV ) x R thj ; Pd = Forward Power Loss = I F(V) x V (I F(V) / D) ; Pd REV = Inverse Power Loss = V R x I R ( - D); I V R = 80% rated V R 9

10 SO-8 (Fetky) Package Outline E 6 6X D e B H 0.25 [.0] DIM INCHES MILLIMET E RS MIN MX MIN MX b c D E e e H K L y BSIC.27 BSIC.025 BSIC BSIC e C y K x 45 8X b 0.25 [.0] C B 0. [.004] 8X L 7 8X c NOTES:. DIMENSIONING & TOLERNCING PER SME Y4.5M CONTROLLING DIMENSION: MILLIMETER 3. DIMENSIONS RE SHOWN IN MILLIMETERS [INCHES]. 4. OUTLINE CONFORMS TO JEDEC OUTLINE MS DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS. MOLD PROTRUSIONS NOT TO EXCEED 0.5 [.006]. 6 DIMENSION DOES NOT INCLUDE MOLD PROTRUSIONS. MOLD PROTRUSIONS NOT TO EXCEED 0.25 [.0]. 7 DIMENSION IS THE LENGTH OF LED FOR SOLDERING TO SUBSTRTE. SO-8 (Fetky) Part Marking Information 6.46 [.255] 3X.27 [.050] F OOT PRINT 8X 0.72 [.028] 8X.78 [.070] EXMPLE: THIS IS N IRF7807D (FETKY) INTERNTIONL RECTIFIER LOGO XXXX 807D DTE CODE (YWW) P = DISGNTES LED - FREE PRODUCT (OPTIONL) Y = LST DIGIT OF T HE YER WW = WEEK = SSEMBLY SITE CODE LOT CODE PRT NUMBER

11 SO-8 Tape and Reel Dimensions are shown in milimeters (inches) TERMINL NUMBER 2.3 (.484 ).7 (.46 ) 8. (.38 ) 7.9 (.32 ) FEED DIRECTION NOTES:. CONTROLLING DIMENSION : MILLIMETER. 2. LL DIMENSIONS RE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EI-48 & EI (2.992) MX. NOTES :. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EI-48 & EI (.566 ) 2.40 (.488 ) Data and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR s Web site. IR WORLD HEDQURTERS: 233 Kansas St., El Segundo, California 90245, US Tel: (3) TC Fax: (3) Visit us at for sales contact information./04