V DSS R DS(on) max Qg (typ.) 60V GS = 10V 24nC
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1 Applications l Synchronous Rectifier MOSFET for Isolated DC-DC Converters l Low Power Motor Drive Systems PD IRF735PbF HEXFET Power MOSFET V DSS R DS(on) max Qg (typ.) 60V 7.8mΩ@V GS = 0V 24nC Benefits l Ultra-Low Gate Impedance l Fully Characterized Avalanche Voltage and Current l 20V V GS Max. Gate Rating S G S2 G Top View D D D2 D2 SO-8 Absolute Maximum Ratings Parameter Max. Units V DS Drain-to-Source Voltage 60 V V GS Gate-to-Source Voltage ± 20 I T A = 25 C Continuous Drain Current, V 0V 8.0 I T A = 70 C Continuous Drain Current, V 0V 6.4 A I DM Pulsed Drain Current c 64 P A = 25 C Power Dissipation f 2.0 W P A = 70 C Power Dissipation f.28 Linear Derating Factor 0.06 W/ C T J Operating Junction and -55 to 50 C T STG Storage Temperature Range Thermal Resistance Parameter Typ. Max. Units R θjl Junction-to-Drain Lead g 20 C/W R θja Junction-to-Ambient fg 62.5 Notes through are on page 0 /8/09
2 IRF735PbF T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions BV DSS Drain-to-Source Breakdown Voltage 60 V V GS = 0V, I D = 250µA ΒV DSS / T J Breakdown Voltage Temp. Coefficient V/ C Reference to 25 C, I D = ma R DS(on) Static Drain-to-Source On-Resistance mω V GS = 0V, I D = 8.0A e V GS(th) Gate Threshold Voltage V V DS = V GS, I D = 50µA V GS(th) Gate Threshold Voltage Coefficient -8.2 mv/ C I DSS Drain-to-Source Leakage Current 20 µa V DS = 60V, V GS = 0V 250 V DS = 60V, V GS = 0V, T J = 25 C I GSS Gate-to-Source Forward Leakage 00 na V GS = 20V Gate-to-Source Reverse Leakage -00 V GS = -20V gfs Forward Transconductance 8 S V DS = 25V, I D = 6.4A Q g Total Gate Charge Q gs Pre-Vth Gate-to-Source Charge 3.8 V DS = 30V Q gs2 Post-Vth Gate-to-Source Charge.2 nc V GS = 0V Q gd Gate-to-Drain Charge 7.2 I D = 6.4A Q godr Gate Charge Overdrive.8 See Fig. 7 Q sw Switch Charge (Q gs2 Q gd ) 8.4 Q oss Output Charge 7.5 nc V DS = 6V, V GS = 0V t d(on) Turn-On Delay Time 5. V DD = 30V, V GS = 0V e t r Rise Time 5.9 ns I D = 6.4A t d(off) Turn-Off Delay Time 7 R G =.8Ω t f Fall Time 6.7 C iss Input Capacitance 330 V GS = 0V C oss Output Capacitance 90 pf V DS = 30V C rss Reverse Transfer Capacitance 92 ƒ =.0MHz Avalanche Characteristics Parameter Typ. Max. Units E AS Single Pulse Avalanche Energy d 325 mj I AR Avalanche Current c 6.4 A Diode Characteristics Parameter Min. Typ. Max. Units I S Continuous Source Current.8 (Body Diode) A I SM Pulsed Source Current 64 (Body Diode)c V SD Diode Forward Voltage.3 V t rr Reverse Recovery Time ns Q rr Reverse Recovery Charge 6 92 nc Conditions MOSFET symbol showing the integral reverse p-n junction diode. T J = 25 C, I S = 6.4A, V GS = 0V e T J = 25 C, I F = 6.4A, V DD = 30V di/dt = 300A/µs e 2
3 I D, Drain-to-Source Current (A) R DS(on), Drain-to-Source On Resistance (Normalized) I D, Drain-to-Source Current (A) I D, Drain-to-Source Current (A) IRF735PbF 00 0 VGS TOP 0V 8.0V 6.0V 5.0V 4.5V 4.3V 4.0V BOTTOM 3.8V 00 VGS TOP 0V 8.0V 6.0V 5.0V 4.5V 4.3V 4.0V BOTTOM 3.8V 0 60µs PULSE WIDTH Tj = 25 C 3.8V V DS, Drain-to-Source Voltage (V) 3.8V 60µs PULSE WIDTH Tj = 50 C V DS, Drain-to-Source Voltage (V) Fig. Typical Output Characteristics Fig 2. Typical Output Characteristics I D = 8.0A V GS = 0V 0.5 T J = 50 C T J = 25 C V DS = 25V 60µs PULSE WIDTH V GS, Gate-to-Source Voltage (V) T J, Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance vs. Temperature 3
4 I SD, Reverse Drain Current (A) I D, Drain-to-Source Current (A) C, Capacitance (pf) V GS, Gate-to-Source Voltage (V) IRF735PbF V GS = 0V, f = MHZ C iss = C gs C gd, C ds SHORTED C rss = C gd C oss = C ds C gd I D = 6.4A V DS = 48V V DS = 30V V DS = 2V 000 C iss C oss C rss V DS, Drain-to-Source Voltage (V) Q G, Total Gate Charge (nc) Fig 5. Typical Capacitance vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage OPERATION IN THIS AREA LIMITED BY R DS (on) 0 T J = 50 C 00 00µsec T J = 25 C V GS = 0V V SD, Source-to-Drain Voltage (V) 0 DC T A = 25 C 0msec msec Tj = 50 C Single Pulse V DS, Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4
5 I D, V GS(th), Drain Current (A) Gate threshold Voltage (V) IRF735PbF I D = 50µA T C, Case Temperature ( C) T J, Temperature ( C ) Fig 9. Maximum Drain Current vs. Case Temperature Fig 0. Threshold Voltage vs. Temperature Thermal Response ( Z thja ) C/W 00 0 D = SINGLE PULSE ( THERMAL RESPONSE ) R R R 2 R 2 R 3 R 3 τ J τ J τ τ τ 2 τ 2 τ 3 τ 3 Ci= τi/ri Ci= τi/ri Ri ( C/W) τi (sec) E-006 E t, Rectangular Pulse Duration (sec) Fig. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient R 4 R 4 τ 4 τ 4 τ A τ A 5
6 E AS, Single Pulse Avalanche Energy (mj) IRF735PbF R DS(on), Drain-to -Source On Resistance (m Ω) I D = 8.0A I D TOP 0.53A 0.79A BOTTOM 6.4A 30 T J = 25 C T J = 25 C V GS, Gate -to -Source Voltage (V) Fig 2. On-Resistance vs. Gate Voltage Starting T J, Junction Temperature ( C) Fig 3. Maximum Avalanche Energy vs. Drain Current L D 5V V DS V DS L DRIVER V DD - R G 20V VGS tp D.U.T IAS 0.0Ω - V DD A V GS Pulse Width < µs Duty Factor < 0.% D.U.T Fig 4a. Unclamped Inductive Test Circuit Fig 5a. Switching Time Test Circuit tp V (BR)DSS V DS 90% 0% V GS I AS t d(on) t r t d(off) t f Fig 4b. Unclamped Inductive Waveforms Fig 5b. Switching Time Waveforms 6
7 IRF735PbF - D.U.T ƒ - Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer - Reverse Recovery Current Driver Gate Drive Period P.W. D.U.T. I SD Waveform Body Diode Forward Current di/dt D.U.T. V DS Waveform Diode Recovery dv/dt D = P.W. Period V GS =0V V DD * R G dv/dt controlled by RG Driver same type as D.U.T. I SD controlled by Duty Factor "D" D.U.T. - Device Under Test V DD - Re-Applied Voltage Inductor Curent Body Diode Forward Drop Ripple 5% I SD * V GS = 5V for Logic Level Devices Fig 6. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET Power MOSFETs Current Regulator Same Type as D.U.T. Vds Id 50KΩ Vgs 2V.2µF.3µF D.U.T. V - DS Vgs(th) V GS 3mA I G I D Current Sampling Resistors Qgs Qgs2 Qgd Qgodr Fig 7a. Gate Charge Test Circuit Fig 7b. Gate Charge Waveform 7
8 IRF735PbF Power MOSFET Selection for Non-Isolated DC/DC Converters Control FET Special attention has been given to the power losses in the switching elements of the circuit - Q and Q2. Power losses in the high side switch Q, also called the Control FET, are impacted by the R ds(on) of the MOSFET, but these conduction losses are only about one half of the total losses. Power losses in the control switch Q are given by; P loss = P conduction P switching P drive P output This can be expanded and approximated by; P loss = ( I 2 rms R ds(on ) ) I Q gd V in f i g ( ) Q g V g f Q oss 2 V f in I Q gs2 i g V in f This simplified loss equation includes the terms Q gs2 and Q oss which are new to Power MOSFET data sheets. Q gs2 is a sub element of traditional gate-source charge that is included in all MOSFET data sheets. The importance of splitting this gate-source charge into two sub elements, Q gs and Q gs2, can be seen from Fig 6. Q gs2 indicates the charge that must be supplied by the gate driver between the time that the threshold voltage has been reached and the time the drain current rises to I dmax at which time the drain voltage begins to change. Minimizing Q gs2 is a critical factor in reducing switching losses in Q. Q oss is the charge that must be supplied to the output capacitance of the MOSFET during every switching cycle. Figure A shows how Q oss is formed by the parallel combination of the voltage dependant (nonlinear) capacitance s C ds and C dg when multiplied by the power supply input buss voltage. Synchronous FET The power loss equation for Q2 is approximated by; * P loss = P conduction P drive P output ( ) P loss = I rms 2 R ds(on) ( ) Q g V g f Q oss 2 V f in Q V f rr in *dissipated primarily in Q. ( ) For the synchronous MOSFET Q2, R ds(on) is an important characteristic; however, once again the importance of gate charge must not be overlooked since it impacts three critical areas. Under light load the MOSFET must still be turned on and off by the control IC so the gate drive losses become much more significant. Secondly, the output charge Q oss and reverse recovery charge Q rr both generate losses that are transfered to Q and increase the dissipation in that device. Thirdly, gate charge will impact the MOSFETs susceptibility to Cdv/dt turn on. The drain of Q2 is connected to the switching node of the converter and therefore sees transitions between ground and V in. As Q turns on and off there is a rate of change of drain voltage dv/dt which is capacitively coupled to the gate of Q2 and can induce a voltage spike on the gate that is sufficient to turn the MOSFET on, resulting in shoot-through current. The ratio of Q gd /Q gs must be minimized to reduce the potential for Cdv/dt turn on. Figure A: Q oss Characteristic 8
9 IRF735PbF SO-8 Package Outline (Mosfet & Fetky) Dimensions are shown in milimeters (inches) ' % ',0,&(6 0, 0$; 0,//,0(7(56 0, 0$; $ $ $ ( >@ $ E F ' ( H %$6,& %$6,& H %$6,& %$6,& ; H. / \ ƒ ƒ ƒ ƒ H $.[ƒ & \ ;E $ >@ ;/ ;F >@ & $ % 27(6 ',0(6,2,* 72/(5$&,*3(5$60(<0 &2752//,*',0(6,20,//,0(7(5 ',0(6,26$5(62:,0,//,0(7(56>,&(6@ 287/,(&2) ('(&287/,(06$$ ',0(6,2'2(627,&/8'(02/' ,26 02/' ,262772(;&(('>@ ',0(6,2'2(627,&/8'(02/' ,26 02/' ,262772(;&(('>@ ',0(6,2,67(/(*72)/($')2562/'(5,*72 $68%675$7( >@ )22735,7 ;>@ ;>@ ;>@ SO-8 Part Marking Information (;$03/(7,6,6$,5)026)(7,7(5$7,2$/ 5(&7,),(5 /2*2 ) ;;;; '$7(&2'(<:: 3 ',6*$7(6/($')5(( 352'8&7237,2$/ < /$67',*,72)7(<($5 :: :((. $ $66(0%/<6,7(&2'( /27&2'( 3$5780%(5 Note: For the most current drawing please refer to IR website at 9
10 IRF735PbF SO-8 Tape and Reel TERMINAL NUMBER 2.3 (.484 ).7 (.46 ) 8. (.38 ) 7.9 (.32 ) FEED DIRECTION NOTES:. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-48 & EIA (2.992) MAX. NOTES :. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-48 & EIA (.566 ) 2.40 (.488 ) Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting T J = 25 C, L = 6mH R G = 25Ω, I AS = 6.4A. ƒ Pulse width 400µs; duty cycle 2%. When mounted on inch square copper board. R θ is measured at T J approximately 90 C. Data and specifications subject to change without notice. This product has been designed and qualified for the Industrial market. Qualification Standards can be found on IR s Web site. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (30) TAC Fax: (30) Visit us at for sales contact information. /09 0
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PD -9697A Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET
More informationIRFR4105ZPbF IRFU4105ZPbF
Features l Advanced Process Technology l Ultra Low On-Resistance l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET Power MOSFET
More informationFASTIRFET IRFHE4250DPbF
Q Q2 V DSS 25 25 V R DS(on) max (@V GS = 4.5V) 4..35 m Qg (typical) 3 35 nc FASTIRFET IRFHE4250DPbF HEXFET Power MOSFET I D (@T C = 25 C) 60 60 A Applications Control and Synchronous MOSFETs for synchronous
More informationIRFR24N15D IRFU24N15D
Applications l High frequency DC-DC converters SMPS MOSFET PD - 94392 IRFR24N5D IRFU24N5D HEXFET Power MOSFET V DSS R DS(on) max I D 50V 95mΩ 24A Benefits Low Gate-to-Drain Charge to Reduce Switching Losses
More informationTO-220AB IRFB4410. W/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery f 19
Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate, Avalanche
More informationIRFZ46ZPbF IRFZ46ZSPbF IRFZ46ZLPbF
Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description
More informationSMPS MOSFET. V DSS R DS(on) max I D
Absolute Maximum Ratings SMPS MOSFET Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Server Processor
More informationV DSS R DS(on) max (mω)
PD- 94094 IRF7325 HEXFET Power MOSFET Trench Technology Ultra Low On-Resistance Dual P-Channel MOSFET Low Profile (
More informationIRF2804PbF IRF2804SPbF IRF2804LPbF HEXFET Power MOSFET
Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free AUTOMOTIVE MOSFET G IRF2804PbF IRF2804SPbF
More information-280 P C = 25 C Power Dissipation 170 Linear Derating Factor. W/ C V GS Gate-to-Source Voltage ± 20
Features Advanced Process Technology Ultra Low On-Resistance 150 C Operating Temperature Fast Switching Repetitive Avalanche Allowed up to Tjmax Some Parameters Are Differrent from IRF4905S Lead-Free Description
More informationSMPS MOSFET. V DSS R DS(on) max (mω) I D
SMPS MOSFET PD- 94048 IRFR220N IRFU220N HEXFET Power MOSFET Applications l High frequency DC-DC converters V DSS R DS(on) max (mω) I D 200V 600 5.0A Benefits l Low Gate to Drain Charge to Reduce Switching
More informationAUTOMOTIVE MOSFET TO-220AB IRL1404Z. Absolute Maximum Ratings Max. I T C = 25 C Continuous Drain Current, V 10V (Silicon Limited)
Features l Logic Level l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET Description Specifically
More informationAUTOMOTIVE MOSFET TO-220AB IRL3705Z. A I T C = 25 C Continuous Drain Current, V 10V (Package Limited) W/ C V GS Gate-to-Source Voltage ± 16
Features l Logic Level l Advanced Process Technology l Ultra Low On-Resistance l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET Description Specifically
More informationV DSS R DS(on) max I D
PD- 94504 IRF1312 IRF1312S IRF1312L HEXFET Power MOSFET Applications High frequency DC-DC converters Motor Control Uninterrutible Power Supplies l l l V DSS R DS(on) max I D 80V 10mΩ 95A Benefits l Low
More informationV DSS. W/ C V GS Gate-to-Source Voltage ±30 E AS (Thermally limited) mj T J Operating Junction and -55 to + 175
PD 976 Applications l Motion Control Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l Hard Switched and High Frequency Circuits Benefits l Low R DSON Reduces
More informationAUTOMOTIVE MOSFET. 30 Pulsed Drain Current c. I DM P C = 25 C Maximum Power Dissipation 120 Linear Derating Factor
Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET S Description
More informationIRFB3507PbF IRFS3507PbF IRFSL3507PbF
Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits l Lead-Free G D S V DSS IRFB357PbF
More informationLower Conduction Losses
PD -96265B V DS 25 V IRFH5250PbF HEXFET Power MOSFET R DS(on) max (@V GS = 0V).5 mω Q g (typical) 52 nc R G (typical).3 Ω I D (@T mb = 25 C) h A PQFN 5X6 mm Applications OR-ing MOSFET for 2V (typical)
More informationSMPS MOSFET. V DSS R DS(on) typ. Trr typ. I D. 600V 385mΩ 130ns 15A
Applications Zero Voltage Switching SMPS Telecom and Server Power Supplies Uninterruptible Power Supplies Motor Control applications SMPS MOSFET PD - 9445A HEXFET Power MOSFET V DSS R DS(on) typ. Trr typ.
More informationW/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery e 13
PD 97344 Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate,
More informationW/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery e 26
PD 97343 IRFS47PPbF HEXFET Power MOSFET Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits
More informationTO-220AB. IRF4104PbF. A I T C = 25 C Continuous Drain Current, V 10V (Package limited)
Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET Power MOSFET
More informationP C = 100 C Power Dissipation Linear Derating Factor
PDP SWITCH PD - 97228 IRFI4228PbF Features l dvanced Process Technology l Key Parameters Optimized for PDP Sustain, Energy Recovery and Pass Switch pplications l Low E PULSE Rating to Reduce Power Dissipation
More informationW/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery f 23. V/ns T J. mj I AR
IRF36SPbF Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits Benefits l Improved Gate,
More informationSMPS MOSFET. V DSS R DS(on) max I D A I DM. 320 P C = 25 C Power Dissipation 260 Linear Derating Factor. V/ns T J
Applications l High frequency DC-DC converters l UPS and Motor Control SMPS MOSFET Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective C
More informationSMPS MOSFET. V DS 200 V V DS (Avalanche) min. 260 V R DS(ON) 10V 54 m: T J max 175 C TO-220AB. IRFB38N20DPbF
Applications High frequency DC-DC converters Plasma Display Panel Lead-Free l l l SMPS MOSFET Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including
More informationIRFZ48NS IRFZ48NL HEXFET Power MOSFET
l Advanced Process Technology l Surface Mount (IRFZ48NS) l Low-profile through-hole (IRFZ48NL) l 75 C Operating Temperature l Fast Switching l Fully Avalanche Rated Description Advanced HEXFET Power MOSFETs
More informationIRLR3915PbF IRLU3915PbF
Features l Advanced Process Technology l Ultra Low On-Resistance l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free Description This HEXFET Power MOSFET
More informationSMPS MOSFET TO-220AB IRL3713. Symbol Parameter Max V DS Drain-Source Voltage 30 V GS Gate-to-Source Voltage ± 20
SMPS MOSFET Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Computer Processor Power l % R G Tested
More informationIRFR3710ZPbF IRFU3710ZPbF HEXFET Power MOSFET
Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free AUTOMOTIVE MOSFET Description Specifically
More informationSMPS MOSFET. V DSS R DS(on) max I D
Benefits l Ultra-Low Gate Impedance SMPS MOSFET Applications l High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for
More informationIRFR540ZPbF IRFU540ZPbF
PD - 964B Features l Advanced Process Technology l Ultra Low On-Resistance l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Lead-Free l Halogen-Free Description
More informationIndustry-standard pinout SO-8 Package Multi-Vendor Compatibility Compatible with Existing Surface Mount Techniques
IRF794PbF HEXFET Power MOSFET V DS 3 V R DS(on) max Q (@V GS = V).2 R DS(on) max Q2 (@V GS = V).8 Q g (typical) Q 7.5 Q g (typical) Q2 4 I D(@TA = 25 C)Q 7. I D(@TA = 25 C)Q2 mω nc A G S2 S2 G2 2 3 4 8
More informationC Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Advanced Process Technology Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fully Avalanche Rated Lead-Free G PD - 94822 IRFZ44EPbF HEXFET Power MOSFET D S V DSS = 60V R DS(on) = 0.023Ω
More informationW/ C V GS Gate-to-Source Voltage ± 20 dv/dt Peak Diode Recovery f 5.3
PD 9638 Applications l High Efficiency Synchronous Rectification in SMPS l Uninterruptible Power Supply l High Speed Power Switching l Hard Switched and High Frequency Circuits l LeadFree Benefits l Improved
More informationIRF7328PbF. HEXFET Power MOSFET V DSS R DS(on) max I D
lÿÿtrench Technology lÿÿultra Low On-Resistance lÿ Dual P-Channel MOSFET lÿavailable in Tape & Reel lÿ Lead-Free PD - 9596A IRF7328PbF HEXFET Power MOSFET V DSS R DS(on) max I D -30V 2mΩ@V GS = -V -8.0A
More information5.0V 5.0V. 20µs PULSE WIDTH Tj = 25 C. Tj = 150 C. V DS, Drain-to-Source Voltage (V) T J = 150 C 1.5. V GS, Gate-to-Source Voltage (V)
9MT050XF "FULL-BRIDGE" FREDFET MTP HEXFET Power MOSFET Features Low On-Resistance High Performance Optimised Built-in Fast Recovery Diodes Fully Characterized Capacitance and Avalanche Voltage and Current
More informationIRF2204SPbF IRF2204LPbF HEXFET Power MOSFET
Typical Applications l Industrial Motor Drive Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche
More informationC Soldering Temperature, for 10 seconds 300 (1.6mm from case )
PD -95487A Typical Applications l Industrial Motor Drive Benefits l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax
More informationIRFR3710ZPbF IRFU3710ZPbF IRFU3710Z-701PbF HEXFET Power MOSFET
Features l Advanced Process Technology l Ultra Low On-Resistance l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax l Multiple Package Options l Lead-Free Description
More informationIRF6668PbF IRF6668TRPbF
Typical R DS(on) (mω) V GS, Gate-to-Source Voltage (V) l RoHs Compliant l Lead-Free (Qualified up to 260 C Reflow) l pplication Specific MOSFETs l Ideal for High Performance Isolated Converter Primary
More informationIRF3205S/L. HEXFET Power MOSFET V DSS = 55V. R DS(on) = 8.0mΩ I D = 110A
l l l l l l Advanced Process Technology Ultra Low On-Resistance Dynamic dv/dt Rating 75 C Operating Temperature Fast Switching Fully Avalanche Rated Description Advanced HEXFET Power MOSFETs from International
More informationSMPS MOSFET. V DSS R DS(on) max I D
Benefits l Ultra-Low Gate Impedance l Very Low RDS(on) at 4.5V V GS l Fully Characterized Avalanche Voltage and Current Absolute Maximum Ratings SMPS MOSFET Applications l High Frequency Isolated DC-DC
More informationIRFB260NPbF HEXFET Power MOSFET
Applications l High frequency DC-DC converters l Lead-Free PD - 95473 SMPS MOSFET IRFB260NPbF HEXFET Power MOSFET Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance
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