HEXFET Power MOSFET V DSS R DS(on) max (mw) I D

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1 l Ultra Low On-Resistance l P-Channel MOSFET l Surface Mount l Available in Tape & Reel l Low Gate Charge l Lead-Free l RoHS Compliant, Halogen-Free HEXFET Power MOSFET V DSS R DS(on) max (mw) I D -30V 98@V GS = -V -3.0A 65@V GS = -4.5V -2.6A Description These P-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. A thermally enhanced large pad leadframe has been incorporated into the standard SOT-23 package to produce a HEXFET Power MOSFET with the industry's smallest footprint. This package, dubbed the Micro3 TM, is ideal for applications where printed circuit board space is at a premium. The low profile (<.mm) of the Micro3 allows it to fit easily into extremely thin application environments such as portable electronics and PCMCIA cards. The thermal resistance and power dissipation are the best available. G S 2 3 D Micro3 TM Standard Pack Base Part Number Package Type Orderable Part Number Form Quantity IRLML5203TRPbF Micro3 (SOT-23) Tape and Reel 3000 IRLML5203TRPbF Absolute Maximum Ratings Parameter Max. Units V DS Drain- Source Voltage -30 V I T A = 25 C Continuous Drain Current, V -V -3.0 I T A = 70 C Continuous Drain Current, V -V -2.4 A I DM Pulsed Drain Current -24 P A = 25 C Power Dissipation.25 P A = 70 C Power Dissipation 0.80 W Linear Derating Factor mw/ C V GS Gate-to-Source Voltage ± 20 V T J, T STG Junction and Storage Temperature Range -55 to + 50 C Thermal Resistance Parameter Max. Units R θja Maximum Junction-to-Ambientƒ 0 C/W International Rectifier Submit Datasheet Feedback April 28, 204

2 Electrical T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)DSS Drain-to-Source Breakdown Voltage -30 V V GS = 0V, I D = -250μA ΔV (BR)DSS/ΔT J Breakdown Voltage Temp. Coefficient 0.09 V/ C Reference to 25 C, I D = -ma 98 V GS = -V, I D = -3.0A R DS(on) Static Drain-to-Source On-Resistance mω 65 V GS = -4.5V, I D = -2.6A V GS(th) Gate Threshold Voltage V V DS = V GS, I D = -250μA g fs Forward Transconductance 3. S V DS = -V, I D = -3.0A I DSS Drain-to-Source Leakage Current -.0 V DS = -24V, V GS = 0V µa -5.0 V DS = -24V, V GS = 0V, T J = 70 C I GSS Gate-to-Source Forward Leakage -0 V GS = -20V na Gate-to-Source Reverse Leakage 0 V GS = 20V Q g Total Gate Charge I D = -3.0A Q gs Gate-to-Source Charge nc V DS = -24V Q gd Gate-to-Drain ("Miller") Charge V GS = -V t d(on) Turn-On Delay Time 2 V DD = -5V t r Rise Time 8 I D = -.0A ns t d(off) Turn-Off Delay Time 88 R G = 6.0Ω t f Fall Time 52 V GS = -V C iss Input Capacitance 5 V GS = 0V C oss Output Capacitance 7 pf V DS = -25V C rss Reverse Transfer Capacitance 43 ƒ =.0MHz Source-Drain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current MOSFET symbol D -.3 (Body Diode) showing the A I SM Pulsed Source Current integral reverse G -24 (Body Diode) p-n junction diode. S V SD Diode Forward Voltage -.2 V T J = 25 C, I S = -.3A, V GS = 0V t rr Reverse Recovery Time 7 26 ns T J = 25 C, I F = -.3A Q rr Reverse Recovery Charge 2 8 nc di/dt = -0A/μs Notes: Repetitive rating; pulse width limited by max. junction temperature. ƒ Surface mounted on FR-4 board, t 5sec. Pulse width 400μs; duty cycle 2% International Rectifier Submit Datasheet Feedback April 28, 204

3 -I D, Drain-to-Source Current (A) 0 0. VGS TOP -5V -V -7.0V -5.5V -4.5V -4.0V -3.5V BOTTOM -2.7V -2.70V 20μs PULSE WIDTH 0.0 T J = 25 C V DS, Drain-to-Source Voltage (V) -I D, Drain-to-Source Current (A) 0 VGS TOP -5V -V -7.0V -5.5V -4.5V -4.0V -3.5V BOTTOM-2.7V -2.70V 20μs PULSE WIDTH 0. T J = 50 C V DS, Drain-to-Source Voltage (V) Fig. Typical Output Characteristics Fig 2. Typical Output Characteristics -I D, Drain-to-Source Current (A) 0 T J = 50 C T J = 25 C V DS= -5V 20μs PULSE WIDTH V GS, Gate-to-Source Voltage (V) R DS(on), Drain-to-Source On Resistance (Normalized) 2.0 I D = 3.0A V GS = -V T J, Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature International Rectifier Submit Datasheet Feedback April 28, 204

4 C, Capacitance (pf) VGS = 0V, f = MHz Ciss = Cgs + Cgd, C ds SHORTED Crss = Cgd Coss = Cds + Cgd C iss C oss C rss 0 0 -V DS, Drain-to-Source Voltage (V) -V GS, Gate-to-Source Voltage (V) I D = -3.0A V DS =-24V V DS =-5V Q G, Total Gate Charge (nc) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage -I SD, Reverse Drain Current (A) 0 T J = 50 C T J = 25 C V GS = 0 V V SD,Source-to-Drain Voltage (V) -I I D, Drain Current (A) 0 OPERATION IN THIS AREA LIMITED BY R DS(on) us 0us ms ms TA = 25 C TJ = 50 C Single Pulse V DS, Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area International Rectifier Submit Datasheet Feedback April 28, 204

5 3.0 V DS R D -I D, Drain Current (A) R G V GS V GS Pulse Width µs Duty Factor 0. % D.U.T. V DD Fig a. Switching Time Test Circuit T C, Case Temperature ( C) V GS t d(on) t r t d(off) t f % Fig 9. Maximum Drain Current Vs. Case Temperature 90% V DS Fig b. Switching Time Waveforms 00 Thermal Response (Z thja ) 0 D = PDM 0.0 t SINGLE PULSE t2 (THERMAL RESPONSE) Notes:. Duty factor D = t / t 2 2. Peak T J= P DM x Z thja + TA t, Rectangular Pulse Duration (sec) Fig. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient International Rectifier Submit Datasheet Feedback April 28, 204

6 R DS(on), Drain-to -Source On Resistance ( Ω) R DS (on), Drain-to-Source On Resistance (Ω) IRLML5203PbF V GS = -4.5V I D = -3.0A 0. V GS = -V V GS, Gate -to -Source Voltage (V) I D, Drain Current (A) Fig. Typical On-Resistance Vs. Gate Voltage Fig 2. Typical On-Resistance Vs. Drain Current Current Regulator Same Type as D.U.T. 50KΩ Q G 2V.2μF.3μF Q GS Q GD D.U.T. + V DS - V G V GS -3mA Charge I G I D Current Sampling Resistors Fig 3a. Basic Gate Charge Waveform Fig 3b. Gate Charge Test Circuit International Rectifier Submit Datasheet Feedback April 28, 204

7 -V GS(th), Variace ( V ) Power (W) IRLML5203PbF I D = -250μA T J, Temperature ( C ) Time (sec) Fig 4. Threshold Voltage Vs. Temperature Fig 5. Typical Power Vs. Time International Rectifier Submit Datasheet Feedback April 28, 204

8 Micro3 (SOT-23) (Lead-Free) Package Outline Dimensions are shown in millimeters (inches) 6 D 5 S Y M B O L A DIME NSIONS MILLIMETERS INCHES MIN MAX MIN MAX A E ccc E C B A A b 0.30 c 0.08 D E e e B 5 E e 0.95 BSC.0375 BSC e.90 BSC.075 BSC L L 0.25 BS C.08 BSC aaa bbb ccc H A A2 L A 3X b aaa C bbb C A B 3 S URF 7 3X L 0 RECOMMENDED FOOTPRINT NOT ES X [.038]. DIMENSIONING AND TOLERANCING PER ASME Y4.5M DIMENSIONS ARE SHOWN IN MILLIMETERS AND INCHES [.79] 3. CONTROLLING DIMENSION: MILLIMETER. 4 DATUM PLANE H IS LOCATED AT THE MOLD PARTING LINE. 5 DATUM A AND B TO BE DETERMINED AT DATUM PLANE H. 6 DIMENSIONS D AND E ARE MEASURED AT DATUM PLANE H. 7 DIMENSION L IS THE LEAD LENGTH FOR SOLDERING TO A SUBSTRATE. 8. OUTLINE CONFORMS TO JEDEC OUTLINE TO-236AB [.0375].90 [.075] X [.03] Micro3 (SOT-23 / TO-236AB) Part Marking Information Notes: This part marking information applies to devices produced after 02/26/200 DATE CODE PART NUMBER Cu WIRE HALOGEN FREE X = PART NUMBER CODE REFERENCE: A = IRLML2402 B = IRLML2803 C = IRLML6302 D = IRLML53 E = IRLML6402 F = IRLML640 G = IRLML2502 H = IRLML5203 I = IRLML0030 J = IRLML2030 K = IRLML00 L = IRLML0060 M = IRLML0040 N = IRLML2060 P = IRLML930 R = IRLML9303 LEAD-FREE ASSEMBLY LOT CODE S = IRLML6244 T = IRLML6246 U = IRLML6344 V = IRLML6346 W = IRFML8244 X = IRLML2244 Y = IRLML2246 Z = IRFML9244 DATE CODE EXAMPLE: YWW = 432 = DF YWW = 503 = 5C W = (-26) IF PRECEDED BY LAST DIGIT OF CALENDAR YEAR WORK YEAR Y WEEK W A B C D X 25 Y 26 Z W = (27-52) IF PRECEDED BY A LETTER YEAR Y WORK WEEK W A 27 A B 28 B C 29 C D 30 D E F G H J K 50 X 5 Y 52 Z Note: For the most current drawing please refer to IR website at International Rectifier Submit Datasheet Feedback April 28, 204

9 Micro3 Tape & Reel Information Dimensions are shown in millimeters (inches) 2.05 (.080 ).95 (.077 ) 4. (.6 ) 3.9 (.54 ).6 (.062 ).5 (.060 ).85 (.072 ).65 (.065 ).32 (.05 ).2 (.045 ) TR 3.55 (.39 ) 3.45 (.36 ) 8.3 (.326 ) 7.9 (.32 ) FEED DIRECTION 4. (.6 ) 3.9 (.54 ). (.043 ) 0.9 (.036 ) 0.35 (.03 ) 0.25 (.0 ) ( ) MAX (.390 ) 8.40 (.33 ) NOTES:. CONTROLLING DIMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-48 & EIA-54. Note: For the most current drawing please refer to IR website at International Rectifier Submit Datasheet Feedback April 28, 204

10 Qualification information Qualification level Cons umer (per JEDEC JESD47F guidelines) Moisture Sensitivity Level RoHS compliant Micro3 (SOT-23) MS L (per JEDE C J-S TD-020D ) Yes Qualification standards can be found at International Rectifier s web site: Applicable version of JEDEC standard at the time of product release Revision History Date 4/28/204 Comment Updated data sheet with new IR corporate template. Updated package outline & part marking on page 8. Added Qualification table -Qual level "Consumer" on page. Added bullet point in the Benefits "RoHS Compliant, Halogen -Free" on page. IR WORLD HEADQUARTERS: N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit International Rectifier Submit Datasheet Feedback April 28, 204

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