IRF5852. HEXFET Power MOSFET V DSS R DS(on) max (W) I D

Transcription

1 l l l l l Ultra Low On-Resistance ual N-Channel MOSFET Surface Mount vailable in Tape & Reel Low Gate Charge P IRF5852 HEXFET Power MOSFET V SS R S(on) max (W) I 20 V 0.090@V GS = 4.5V @V GS = 2.5V 2.2 escription These N-channel MOSFETs from International Rectifier utilize advanced processing techniques to achieve the extremely low on-resistance per silicon area. This benefit provides the designer with an extremely efficient device for use in battery and load management applications. G S2 G S 2 This ual TSOP-6 package is ideal for applications where printed circuit board space is at a premium and where maximum functionality is required. With two die per package, the IRF5852 can provide the functionality of two SOT-23 packages in a smaller footprint. Its unique thermal design and R S(on) reduction enables an increase in current-handling capability. TSOP-6 Top View bsolute Maximum Ratings Parameter Max. Units V S rain- Source Voltage 20 V T = 25 C Continuous rain Current, V 4.5V 2.7 T = 70 C Continuous rain Current, V 4.5V 2.2 I M Pulsed rain Current = 25 C Power issipation ƒ 0.96 = 70 C Power issipationƒ 0.62 W Linear erating Factor 7.7 mw/ C V GS Gate-to-Source Voltage ± 2 V T J, T STG Junction and Storage Temperature Range -55 to + 50 C Thermal Resistance Parameter Max. Units R θj Maximum Junction-to-mbientƒ 30 C/W /3/03

2 Electrical T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)SS rain-to-source Breakdown Voltage 20 V V GS = 0V, I = 250µ V (BR)SS / T J Breakdown Voltage Temp. Coefficient 0.06 V/ C Reference to 25 C, I = m R S(on) Static rain-to-source On-Resistance V GS = 4.5V, I = 2.7 Ω 0.20 V GS = 2.5V, I = 2.2 V GS(th) Gate Threshold Voltage V V S = V GS, I = 250µ g fs Forward Transconductance 5.2 S V S = 0V, I = 2.7 I SS rain-to-source Leakage Current.0 V S = 6V, V GS = 0V µ 25 V S = 6V, V GS = 0V, T J = 70 C I GSS Gate-to-Source Forward Leakage V GS = 2V n Gate-to-Source Reverse Leakage - V GS = -2V Q g Total Gate Charge I = 2.7 Q gs Gate-to-Source Charge 0.95 nc V S = 6V Q gd Gate-to-rain ("Miller") Charge 0.88 V GS = 4.5V t d(on) Turn-On elay Time 6.6 V = 0V t r Rise Time.2 I =.0 ns t d(off) Turn-Off elay Time 5 R G = 6.2Ω t f Fall Time 2.4 V GS = 4.5V C iss Input Capacitance 400 V GS = 0V C oss Output Capacitance 48 pf V S = 5V C rss Reverse Transfer Capacitance 32 ƒ =.0MHz Source-rain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current MOSFET symbol 0.96 (Body iode) showing the G I SM Pulsed Source Current integral reverse (Body iode) p-n junction diode. V S iode Forward Voltage.2 V T J = 25 C, I S = 0.96, V GS = 0V t rr Reverse Recovery Time ns T J = 25 C, I F = 0.96 Q rr Reverse Recovery Charge nc di/dt = /µs S Notes: Repetitive rating; pulse width limited by max. junction temperature. ƒ Surface mounted on FR-4 board, t 5sec. Pulse width 400µs; duty cycle 2%. 2

3 I, rain-to-source Current () 0 VGS TOP 7.5V 4.5V 3.5V 3.0V 2.5V 2.0V.75V BOTTOM.5V.50V I, rain-to-source Current () 0 VGS TOP 7.5V 4.5V 3.5V 3.0V 2.5V 2.0V.75V BOTTOM.5V.50V 20µs PULSE WITH 0. T J = 25 C 0. 0 V S, rain-to-source Voltage (V) 20µs PULSE WITH 0. T J = 50 C 0. 0 V S, rain-to-source Voltage (V) Fig. Typical Output Characteristics Fig 2. Typical Output Characteristics I, rain-to-source Current () 0 T J = 25 C T J = 50 C V S= 5V 0. 20µs PULSE WITH V GS, Gate-to-Source Voltage (V) R S(on), rain-to-source On Resistance (Normalized) 2.0 I = V GS= 4.5V T J, Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 3

4 C, Capacitance (pf) VGS = 0V, f = MHz Ciss = Cgs + Cgd, C ds SHORTE Crss = Cgd Coss = Cds + Cgd C iss 2 C oss C rss V S, rain-to-source Voltage (V) Q G, Total Gate Charge (nc) V GS, Gate-to-Source Voltage (V) I = 2.7 V S = 6V V S = 0V Fig 5. Typical Capacitance Vs. rain-to-source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage I S, Reverse rain Current () 0 T J = 50 C T J = 25 C V GS = 0 V V S,Source-to-rain Voltage (V) I, rain Current () 0 OPERTION IN THIS RE LIMITE BY R S(on) us ms 0ms T = 25 C TJ = 50 C Single Pulse V S, rain-to-source Voltage (V) Fig 7. Typical Source-rain iode Forward Voltage Fig 8. Maximum Safe Operating rea 4

5 I, rain Current () T C, Case Temperature ( C) Fig 0a. Switching Time Test Circuit V S 90% R G V GS 4.5V V S Pulse Width µs uty Factor 0. % R.U.T. + - V Fig 9. Maximum rain Current Vs. Case Temperature 0% V GS t d(on) t r t d(off) t f Fig 0b. Switching Time Waveforms 0 Thermal Response (Z thj ) 0 = PM 0.0 t SINGLE PULSE (THERML RESPONSE) t2 Notes:. uty factor = t / t 2 2. Peak T J =P M x Z thj + T t, Rectangular Pulse uration (sec) Fig 0. Typical Effective Transient Thermal Impedance, Junction-to-mbient 5

6 R S (on), rain-to-source On Resistance (Ω) IRF R S(on), rain-to -Source On Resistance (Ω) V GS = 2.5V 0.08 I = V GS, Gate -to -Source Voltage (V) 0.00 V GS = 4.5V I, rain Current () Fig. Typical On-Resistance Vs. Gate Voltage Fig 2. Typical On-Resistance Vs. rain Current Current Regulator Same Type as.u.t. 4.5 V Q GS Q G Q G 2V.2µF 50KΩ.3µF.U.T. + V - S V G V GS 3m Charge I G I Current Sampling Resistors Fig 3a. Basic Gate Charge Waveform Fig 3b. Gate Charge Test Circuit 6

7 V GS(th), Variace ( V ) Power (W) IRF I = 250µ T J, Temperature ( C ) Time (sec) Fig 4. Threshold Voltage Vs. Temperature Fig 5. Typical Power Vs. Time 7

8 TSOP-6 Package Outline TSOP-6 Tape & Reel Information 8

9 TSOP-6 Part Marking Information Notes: This part marking information applies to devices produced before 02/26/200 EXMPLE: THIS IS N SI3443V PRT NUMBER WFER LOT NUMBER COE TOP T E COE WW = (-26) IF PRECEE BY LST IGIT OF CLENR YER YER Y WORK WEE K W B C 24 X 25 Y 26 Z PRT NUMBER COE REFERENCE: 3 = SI3443V 3B = IRF5800 3C = IRF = IRF585 3E = IRF5852 3I = IRF5805 3J = IRF5806 BOTTOM TE COE EXMPLES: YWW = 9603 = 6C YWW = 9632 = FF WW = (27-52) IF PRECEE BY LETTER WORK YER Y WEE K W B 28 B 2003 C 29 C E F G H J K 50 X 5 Y Notes: This part marking information applies to devices produced after 02/26/200 PRT NUMBER TOP Y = YER W = WEEK LOT COE W = (-26) IF PRECEE BY LST IGIT OF CLENR YER YE R Y WOR K WE EK W B C X Y Z PRT NUMBER COE REFERENCE: = SI3443V B = IRF5800 C = IRF5850 = IRF585 E = IRF5852 I = IRF5805 J = IRF5806 K = IRF580 L = IRF5804 M = IRF5803 N = IRF5820 W = (27-52) IF PRECEE BY LETTER YE R Y B C E F G H J K WOR K WE EK W B C X Y ata and specifications subject to change without notice. This product has been designed and qualified for the consumer market. Qualification Standards can be found on IR s Web site. IR WORL HEQURTERS: 233 Kansas St., El Segundo, California 90245, US Tel: (30) TC Fax: (30) Visit us at for sales contact information. /03 9