HEXFET Power MOSFET for DC-DC Converters. Absolute Maximum Ratings Parameter Symbol IRF7828PbF Units Drain-Source Voltage V DS

Transcription

1 P-95214A EXFET Power MOSFET for C-C Converters N-Channel Application-Specific MOSFETs Ideal for CPU Core C-C Converters Low Conduction Losses Low Switching Losses Lead-Free S S A escription This new device employs advanced EXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make it ideal for high efficiency C-C converters that power the latest generation of microprocessors. The IRF7828 has been optimized for all parameters that are critical in synchronous buck converters including R S(on), gate charge and Cdv/dt-induced turn-on immunity. The IRF7828 offers particulary low R S(on) and high Cdv/dt immunity for synchronous FET applications. The package is designed for vapor phase, infra-red, convection, or wave soldering techniques. Power dissipation of greater than 3W is possible in a typical PCB mount application. S 3 6 G 4 5 SO-8 Top View EVICE CARACTERISTICS R S(on) 9.5mΩ Q G 9.2nC Q sw 3.7nC Q oss 6.1nC Absolute Maximum Ratings Parameter Symbol Units rain-source Voltage V S 30 V Gate-Source Voltage V GS ±20 Continuous rain or Source T A = 25 C I 13.6 Current (V GS 4.5V) T L = 70 C 11 A Pulsed rain Current I M Power issipation T A = 25 C P 2.5 W T L = 70 C 1.6 Junction & Storage Temperature Range T J, T STG 55 to 150 C Continuous Source Current (Body iode) I S 3.1 A Pulsed Source Current I SM Thermal Resistance Parameter Max. Units Maximum Junction-to-Ambient R θja 50 C/W Maximum Junction-to-Lead R θjl 20 C/W 04/05/07

2 Electrical Characteristics Parameter Min Typ Max Units Conditions rain-to-source BV SS 30 V V GS = 0V, I = 250µA Breakdown Voltage Static rain-source R S(on) mω V GS = 4.5V, I = 10A on Resistance Gate Threshold Voltage V GS(th) 1.0 V V S = V GS,I = 250µA rain-source Leakage I SS 1.0 V S = 24V, V GS = 0 Current Current* 150 µa V S = 24V, V GS = 0, Tj = 125 C Gate-Source Leakage I GSS ± na V GS = ±20V Current Total Gate Chg Cont FET Q G V GS =5.0V, I =15A, V S =16V Total Gate Chg Sync FET Q G 7.3 V GS = 5V, V S < mv Pre-Vth Q GS1 2.5 V S = 15V, I = 10A Gate-Source Charge Post-Vth Q GS2 0.8 nc Gate-Source Charge Gate to rain Charge Q G 2.9 Switch Chg(Q gs2 + Q gd ) Q sw 3.7 Output Charge Q oss 6.1 V S = 10V, V GS = 0 Gate Resistance R G 2.3 Ω Turn-on elay Time t d (on) 6.3 V = 15V, I = 10A Rise Time t r 2.7 ns V GS = 4.5V Turn-off elay Time t d (off) 9.7 Clamped Inductive Load Fall Time t f 7.3 Input Capacitance C iss 1010 Output Capacitance C oss 360 pf V S = 15V, V GS = 0 Reverse Transfer Capacitance C rss 110 Source-rain Rating & Characteristics Parameter Min Typ Max Units Conditions iode Forward V S 1.0 V I S = 10A, V GS = 0V Voltage* Reverse Recovery Charge Q rr 13 nc di/dt ~ 700A/µs V S = 16V, V GS = 0V, I S = 15A Reverse Recovery Q rr(s) 13 nc di/dt = 700A/µs Charge (with Parallel (with 10BQ040) Schottky) V S = 16V, V GS = 0V, I S = 15A Notes: Repetitive rating; pulse width limited by max. junction temperature. Pulse width 400 µs; duty cycle 2%. When mounted on 1 inch square copper board Typ = measured - Q oss Typical values of R S (on) measured at V GS = 4.5V, Q G, Q SW and Q OSS measured at V GS = 5.0V, I F = 10A. 2

3 C, Capacitance (pf) R S(on), rain-to-source On Resistance (Normalized) V GS, Gate-to-Source Voltage (V) 2.0 I = 14A V GS = 10V I = 10A V S = 24V VS= 15V T J, Junction Temperature ( C) Q G Total Gate Charge (nc) Fig 1. Normalized On-Resistance Vs. Temperature Fig 2. Typical Gate Charge Vs. Gate-to-Source Voltage 00 V GS = 0V, f = 1 MZ C iss = C gs + C gd, C ds SORTE 0 C rss = C gd C oss = C ds + C gd Ciss Coss Crss V S, rain-to-source Voltage (V) Fig 3. On-Resistance Vs. Gate Voltage Fig 4. Typical Capacitance Vs. rain-to-source Voltage 3

4 I, rain-to-source Current (Α) Thermal Response ( Z thja ) I S, Reverse rain Current (A).0 T J = 150 C T J = 150 C T J = 25 C T J = 25 C V S = 15V 20µs PULSE WIT V GS, Gate-to-Source Voltage (V) Fig 5. Typical Transfer Characteristics V GS = 0V V S, Source-torain Voltage (V) Fig 6. Typical Source-rain iode Forward Voltage = SINGLE PULSE ( TERMAL RESPONSE ) E-006 1E t 1, Rectangular Pulse uration (sec) Figure 7. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 4

5 SO-8 Package Outline imensions are shown in milimeters (inches) ' % ',0,1&+(6 0,1 0; 0,//,0(7(56 0,1 0; ( + >@ E F ' ( %6,& %6,& %6,& %6,& + ;. / \ & \.[ ;E >@ ;/ ;F >@ & % 127(6 ',0(16,21,1* 72/(51&,1*3(560(<0 &21752//,1*',0(16,210,//,0(7(5 ',0(16,2165(6+2:1,10,//,0(7(56>,1&+(6@ 287/,1(&21) ('(&287/,1(06 ',0(16,21'2(6127,1&/8'(02/' ,216 02/' , (;&(('>@ ',0(16,21'2(6127,1&/8'(02/' ,216 02/' , (;&(('>@ ',0(16,21,67+(/(1*7+2)/(')2562/'(5,1*72 68%6757( >@ ;>@ )22735,17 ;>@ ;>@ SO-8 Part Marking Information (Lead-Free) (;03/(7+,6,61,5)026)(7,17(517,21/ 5(&7,),(5 /2*2 ) ;;;; '7(&2'(<:: 3 '(6,*17(6/(')5(( 352'8&7237,21/ < /67',*,72)7+(<(5 :: :((. 66(0%/<6,7(&2'( /27&2'( %(5 5

6 SO-8 Tape and Reel imensions are shown in milimeters (inches) TERMINAL NUMBER (.484 ) 11.7 (.461 ) 8.1 (.318 ) 7.9 (.312 ) FEE IRECTION NOTES: 1. CONTROLLING IMENSION : MILLIMETER. 2. ALL IMENSIONS ARE SOWN IN MILLIMETERS(INCES). 3. OUTLINE CONFORMS TO EIA-481 & EIA (12.992) MAX. NOTES : 1. CONTROLLING IMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA (.566 ) (.488 ) ata and specifications subject to change without notice. This product has been designed and qualified for the Consumer market. Qualification Standards can be found on IR s Web site. IR WORL EAQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) TAC Fax: (310) Visit us at for sales contact information.04/07 6