IRLMS1503. HEXFET Power MOSFET V DSS = 30V. R DS(on) = 0.10Ω. 1. Top View
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1 P IRLMS503 HEXFET Power MOSFET l l l l Generation V Technology Micro6 Package Style Ultra Low R S(on) N-Channel MOSFET A V SS = 30V escription Fifth Generation HEXFET power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely low on-resistance per silicon area. This benefit, combined with the fast switching speed and ruggedized device design that HEXFET power MOSFETs are well known for, provides the designer with an extremely efficient and reliable device for use in a wide variety of applications. G 3 4 Top View S R S(on) = 0.0Ω The Micro6 package with its customized leadframe produces a HEXFET power MOSFET with R S(on) 60% less than a similar size SOT-23. This package is ideal for applications where printed circuit board space is at a premium. It's unique thermal design and R S(on) reduction enables a current-handling increase of nearly 300% compared to the SOT-23. Micro6 Absolute Maximum Ratings Parameter Max. Units T A = 25 C Continuous rain Current, V 0V 3.2 T A = 70 C Continuous rain Current, V 0V 2.6 A I M Pulsed rain Current 8 A = 25 C Power issipation.7 W Linear erating Factor 3 mw/ C V GS Gate-to-Source Voltage ± 20 V dv/dt Peak iode Recovery dv/dt 5.0 V/ns T J, T STG Junction and Storage Temperature Range -55 to 50 C Thermal Resistance Ratings Parameter Min. Typ. Max Units R θja Maximum Junction-to-Ambient 75 C/W 3/7/04
2 IRLMS503 Electrical T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)SS rain-to-source Breakdown Voltage 30 V V GS = 0V, I = 250µA V (BR)SS/ T J Breakdown Voltage Temp. Coefficient V/ C Reference to 25 C, I = ma R S(on) Static rain-to-source On-Resistance 0. V GS = 0V, I = 2.2A ƒ Ω 0.20 V GS = 4.5V, I =.A ƒ V GS(th) Gate Threshold Voltage.0 V V S = V GS, I = 250µA g fs Forward Transconductance. S V S = 0V, I =.A I SS rain-to-source Leakage Current.0 V S = 24V, V GS = 0V µa 25 V S = 24V, V GS = 0V, T J = 25 C I GSS Gate-to-Source Forward Leakage - V GS = -20V na Gate-to-Source Reverse Leakage V GS = 20V Q g Total Gate Charge I = 2.2A Q gs Gate-to-Source Charge..7 nc V S = 24V Q gd Gate-to-rain ("Miller") Charge V GS = 0V, See Fig. 6 and 9 ƒ t d(on) Turn-On elay Time 4.6 V = 5V t r Rise Time 4.4 I = 2.2A ns t d(off) Turn-Off elay Time 0 R G = 6.0Ω t f Fall Time 2.0 R = 6.7Ω, See Fig. 0 ƒ C iss Input Capacitance 20 V GS = 0V C oss Output Capacitance 90 pf V S = 25V C rss Reverse Transfer Capacitance 32 ƒ =.0MHz, See Fig. 5 Source-rain Ratings and Characteristics Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current MOSFET symbol.7 (Body iode) showing the A I SM Pulsed Source Current integral reverse G 8 (Body iode) p-n junction diode. V S iode Forward Voltage.2 V T J = 25 C, I S = 2.2A, V GS = 0V ƒ t rr Reverse Recovery Time ns T J = 25 C, I F = 2.2A Q rr Reverse RecoveryCharge nc di/dt = A/µs ƒ S Notes: Repetitive rating; pulse width limited by max. junction temperature. ( See fig. ) I S 2.2A, di/dt 50A/µs, V V (BR)SS, T J 50 C ƒ Pulse width 300µs; duty cycle 2%. Surface mounted on FR-4 board, t 5sec. 2
3 IRLMS503 I, rain-to-source Current (A) 0 VGS TOP 5V 0V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM3.0V 3.0V I, rain-to-source Current (A) 0 VGS TOP 5V 0V 7.0V 5.5V 4.5V 4.0V 3.5V BOTTOM 3.0V 3.0V 20µs PULSE WITH 0. T J = 25 C 0. 0 V S, rain-to-source Voltage (V) 20µs PULSE WITH 0. T J = 50 C 0. 0 V S, rain-to-source Voltage (V) Fig. Typical Output Characteristics Fig 2. Typical Output Characteristics I, rain-to-source Current (A) 0 T J = 25 C T J = 50 C V S= 0V 20µs PULSE WITH V GS, Gate-to-Source Voltage (V) R S(on), rain-to-source On Resistance (Normalized) 2.0 I = 2.2A V GS= 0V T J, Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 2
4 IRLMS503 C, Capacitance (pf) 350 VGS = 0V, f = MHz Ciss = Cgs Cgd, C ds SHORTE 300 Crss = Cgd Coss = Cds Cgd 250 C iss C oss 50 C rss 0 0 V S, rain-to-source Voltage (V) V GS, Gate-to-Source Voltage (V) I = 2.2A V S = 24V V S = 5V FOR TEST CIRCUIT SEE FIGURE Q G, Total Gate Charge (nc) Fig 5. Typical Capacitance Vs. rain-to-source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage I S, Reverse rain Current (A) 0 T J = 50 C T J = 25 C V GS = 0 V V S,Source-to-rain Voltage (V) I, rain Current (A) 0 OPERATION IN THIS AREA LIMITE BY R S(on) 0us us ms 0ms TC = 25 C TJ = 50 C Single Pulse 0. 0 V S, rain-to-source Voltage (V) Fig 7. Typical Source-rain iode Forward Voltage Fig 8. Maximum Safe Operating Area 4
5 IRLMS503 Q G V S R 0V Q GS Q G R G V GS.U.T. V G 0V - V Charge Pulse Width µs uty Factor 0. % Fig 9a. Basic Gate Charge Waveform 2V V GS Current Regulator Same Type as.u.t..2µf 50KΩ.3µF.U.T. V - S Fig 0a. Switching Time Test Circuit V S 90% 0% V GS t d(on) t r t d(off) t f 3mA I G I Current Sampling Resistors Fig 9b. Gate Charge Test Circuit Fig 0b. Switching Time Waveforms Thermal Response (Z thja ) 0 = SINGLE PULSE (THERMAL RESPONSE) Notes:. uty factor = t / t 2 2. Peak T J= P M x Z thja TA t, Rectangular Pulse uration (sec) PM t t2 Fig. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 4
6 IRLMS503 Peak iode Recovery dv/dt Test Circuit.U.T ƒ - Circuit Layout Considerations Low Stray Inductance Ground Plane Low Leakage Inductance Current Transformer - - R G dv/dt controlled by R G river same type as.u.t. I S controlled by uty Factor "".U.T. - evice Under Test - V river Gate rive Period P.W. = P.W. Period V GS =0V *.U.T. I S Waveform Reverse Recovery Current Body iode Forward Current di/dt.u.t. V S Waveform iode Recovery dv/dt V Re-Applied Voltage Inductor Curent Body iode Forward rop Ripple 5% I S * V GS = 5V for Logic Level evices Fig 3. For N-channel HEXFET power MOSFET s 6
7 IRLMS503 Package Outline Micro6ä 3.00 (.8 ) 2.80 (. ) -B- LEA ASSIGNMENTS RECOMMENE FOOTPRINT S 2X 0.95 (.0375 ).75 (.068 ).50 (.060 ) -A (.8 ) 2.60 (.03 ) (.087 ) 6X (.06 (.042 ) 0.95 (.0375 ) 2X 0.50 (.09 ) 6X 0.35 (.04 ) 0.5 (.006 ) M C A S B S G 6X 0.65 (.025 ).30 (.05 ) 0.90 (.036 ).45 (.057 ) 0.90 (.036 ) O O (.007 ) 6X 0.09 (.004 ) -C- 0.5 (.006 ) MAX. 0.0 (.004 ) 6 SURFACES 0.60 (.023 ) 0.0 (.004 ) NOTES :. IMENSIONING & TOLERANCING PER ANSI Y4.5M CONTROLLING IMENSION : MILLIMETER. 3. IMENSIONS ARE SHOWN IN MILLIMETERS (INCHES). Part Marking Information Micro6ä RWHV7KLVSUWPUNLQJLQIRUPWLRQSSOLHVWRGHYLFHVSURGXFHGEHIRUH I r ) Uuv ƒh h xv t v s h v hƒƒyvr qr vpr ƒ qˆprq hs Q6SUIVH7@S UPQ X6A@SGPU IVH7@S8P9@ 7PUUPH Q6SUIVH7@S8P9@S@A@S@I8@)!62SGHT (!!72SGHT $"!82SGHT%&!!92SGHT$&"!@2SGHT%'!!A2SGHT#$!!B2SGHT!!!C2SGHT%'" 96U@8P9@@Y6HQG@T) `XX2(%"2%8 `XX2(%"!2AA 96U@ 8P9@ XX2!%AQS@8@9@97`G6TU9BUPA86G@I96S`@6S XPSF `@6S ` X@@F X! 6!!!! 7!" " " 8!# # # 9!$ $ ((% % ((& & ((' ' ((( (!!# Y!$ `!% a XX2!&$!AQS@8@9@97`6G@UU@S XPSF `@6S ` X@@F X! 6!& 6!! 7!' 7!" 8!( 8!# 9 " ((% A ((& B ((' C ((( E! F $ Y $ ` Q6SU IVH7@S UPQ Q6SU IVH7@S 8P9@ S@A@S@I8@) 62SGHT (! 72SGHT $" 8 2 SGHT%&! SGHT%'! A 2 SGHT#$! B 2 SGHT!! C 2 SGHT%'" `2`@6S X 2 X@@F GPU 8P9@ Note: A line above the work week (as shown here) indicates Lead-Free. X 2!% A QS@8@9@9 7` G6TU 9BU PA 86G@I96S `@6S `@6S!!!!!!" " "!# # #!$ $ ((% % ((& & ((' ' ((( (!!#!$!% X 2!&$! A QS@8@9@9 7` 6 G@UU@S `@6S!!!!"!#!$ ((% ((& ((' (((! ` ` XPSF X@@F XPSF X@@F X Y ` a X 6!& 6 7!' 7 8!( 8 9 " A B C E F $ Y $ ` $! a 6
8 IRLMS503 Tape & Reel Information Micro6ä 8mm 4mm FEE IRECTION NOTES :. OUTLINE CONFORMS TO EIA-48 & EIA ( ) MAX (.390 ) 8.40 (.33 ) NOTES:. CONTROLLING IMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-48 & EIA-54. ata and specifications subject to change without notice. IR WORL HEAQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (30) TAC Fax: (30) Visit us at for sales contact information. 03/04 8
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SMPS MOSFET PD - 95536 IRFB23N20DPbF IRFS23N20DPbF IRFSL23N20DPbF HEXFET Power MOSFET Applications High frequency DC-DC converters Lead-Free l l V DSS R DS(on) max I D 200V 0.Ω 24A Benefits Low Gate-to-Drain
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P-95214A EXFET Power MOSFET for C-C Converters N-Channel Application-Specific MOSFETs Ideal for CPU Core C-C Converters Low Conduction Losses Low Switching Losses Lead-Free S S 1 2 8 7 A escription This
More informationSMPS MOSFET. V DS 200 V V DS (Avalanche) min. 260 V R DS(ON) 10V 54 m: T J max 175 C TO-220AB. IRFB38N20DPbF
Applications High frequency DC-DC converters Plasma Display Panel Lead-Free l l l SMPS MOSFET Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including
More informationSMPS MOSFET HEXFET Power MOSFET. V DSS R DS(on) max I D. 320 P C = 25 C Power Dissipation 260 Linear Derating Factor.
Applications l High frequency DC-DC converters l UPS and Motor Control l Lead-Free Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective C
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SMPS MOSFET PD - 94357A IRFB52N15D IRFS52N15D IRFSL52N15D HEXFET Power MOSFET Applications l High frequency DC-DC converters V DSS R DS(on) max I D 150V 0.032Ω 60A Benefits Low Gate-to-Drain Charge to
More informationl Advanced Process Technology TO-220AB IRF640NPbF
l Advanced Process Technology l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements l Lead-Free Description Fifth
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PD- 94504 IRF1312 IRF1312S IRF1312L HEXFET Power MOSFET Applications High frequency DC-DC converters Motor Control Uninterrutible Power Supplies l l l V DSS R DS(on) max I D 80V 10mΩ 95A Benefits l Low
More informationDescription Absolute Maximum Ratings Parameter Max. Units Thermal Resistance Parameter Typ. Max. Units
l l l l l Advanced Process Technology Optimized for 4.5V-7.0V Gate Drive Ideal for CPU Core DC-DC Converters Fast Switching Lead-Free Description These HEXFET Power MOSFETs were designed specifically to
More informationIRF7338. HEXFET Power MOSFET. Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel.
PD - 94372C HEXFET Power MOSFET l l l l Ultra Low On-Resistance Dual N and P Channel MOSFET Surface Mount Available in Tape & Reel S G S2 N-CHANNEL MOSFET 8 2 7 3 6 D D D2 N-Ch P-Ch DSS 2-2 G2 4 5 P-CHANNEL
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l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching G l Fully Avalanche Rated l Lead-Free Description Advanced HEXFET Power MOSFETs
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Typical R S (on) (mω), Gate-to-Source Voltage (V) l RoHs Compliant Containing No Lead and Bromide l Low Profile (
More informationl Advanced Process Technology
l Advanced Process Technology D l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully Avalanche Rated G l Ease of Paralleling l Simple Drive Requirements S l Lead-Free Description
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P- 93842B SMPS MOSFET IRF7455 HEXFET Power MOSFET pplications V SS R S(on) max I l High Frequency C-C Converters with Synchronous Rectification 30V 0.0075Ω 15 Benefits l l l Ultra-Low R S(on) at 4.5V V
More informationAUTOMOTIVE MOSFET. I D = 140A Fast Switching
IRF3808 AUTOMOTIVE MOSFET Typical Applications HEXFET Power MOSFET Integrated Starter Alternator D 42 Volts Automotive Electrical Systems V DSS = 75V Benefits Advanced Process Technology R DS(on) = 0.007Ω
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l Advanced Process Technology l Ultra Low OnResistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Optimized for SMPS Applications Description Advanced
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SMPS MOSFET PD - 94445 HEXFET Power MOSFET Applications l High frequency DC-DC converters V DSS R DS(on) max I D 50V 85mΩ@V GS = V 2.6A Benefits l Low Gate to Drain Charge to Reduce Switching Losses l
More informationIRF7301 PD C. HEXFET Power MOSFET V DSS = 20V. R DS(on) = 0.050Ω SO-8. Absolute Maximum Ratings. Thermal Resistance Ratings
HEXFET Power MOSFET l Generation V Technology l Ultra Low On-Resistance 8 S l ual N-Channel Mosfet 2 7 l Surface Mount G l vailable in Tape & Reel 3 6 S2 2 l ynamic dv/dt Rating 4 5 G2 2 l Fast Switching
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l Ultra Low OnResistance l PChannel l Surface Mount (IRFR54) l Straight Lead (IRFU54) l Advanced Process Technology l Fast Switching G l Fully Avalanche Rated l LeadFree Description Fifth Generation HEXFETs
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l Advanced Process Technology l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching l Fully Avalanche Rated l Ease of Paralleling l Simple Drive Requirements Description Fifth Generation
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SMPS MOSFET PD- 95325 IRFB17N20DPbF IRFS17N20DPbF IRFSL17N20DPbF HEXFET Power MOSFET Applications l High frequency DC-DC converters l Lead-Free Benefits Low Gate-to-Drain Charge to Reduce Switching Losses
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AUTOMOTIVE MOSFET PD -94A IRFBA405P Typical Applications Electric Power Steering (EPS) Anti-lock Braking System (ABS) HEXFET Power MOSFET Wiper Control D Climate Control V DSS = 55V Power Door Benefits
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l Logic-Level Gate Drive l Advanced Process Technology l Surface Mount (IRL3803VS) l Low-profile through-hole (IRL3803VL) l 175 C Operating Temperature l Fast Switching G l Fully Avalanche Rated l Lead-Free
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Typical Applications Relay replacement Anti-lock Braking System Air Bag Benefits Advanced Process Technology Ultra Low On-Resistance Fast Switching Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET
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l Ultra Low On-Resistance l P-Channel MOSFET l Surface Mount l Available in Tape & Reel l Low Gate Charge l Lead-Free l RoHS Compliant, Halogen-Free HEXFET Power MOSFET V DSS R DS(on) max (mw) I D -30V
More informationA I DM Pulsed Drain Current 10 P C = 25 C Power Dissipation 2.0
l Adavanced Process Technology l Ultra Low On-Resistance l Dual N-Channel MOSFET l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching Description Fourth Generation HEXFETs
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l Generation V Technology l Ultra Low On-Resistance l Dual P-Channel Mosfet l Surface Mount l Available in Tape & Reel l Dynamic dv/dt Rating l Fast Switching Description Fifth Generation HEXFETs from
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Absolute Maximum Ratings SMPS MOSFET Applications l High Frequency Isolated DC-DC Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for Server Processor
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Applications l High frequency DC-DC converters Benefits Low Gate-to-Drain Charge to Reduce Switching Losses Fully Characterized Capacitance Including Effective C OSS to Simplify Design, (See App. Note
More informationAUTOMOTIVE MOSFET. C Soldering Temperature, for 10 seconds 300 (1.6mm from case )
PD -95487 Typical Applications 42 Volts Automotive Electrical Systems Electrical Power Steering (EPS) Integrated Starter Alternator Lead-Free Benefits Ultra Low On-Resistance Dynamic dv/dt Rating 75 C
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PD - 95258A IRFL435PbF HEXFET Power MOSFET Applications l High frequency DC-DC converters V DSS R DS(on) max I D 50V 85mW@V GS = V 2.6A Benefits l Low Gate to Drain Charge to Reduce Switching Losses l
More informationC Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Typical Applications l Industrial Motor Drive Benefits l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche
More informationAUTOMOTIVE MOSFET. 30 Pulsed Drain Current c. I DM P C = 25 C Maximum Power Dissipation 120 Linear Derating Factor
Features l Advanced Process Technology l Ultra Low On-Resistance l Dynamic dv/dt Rating l 175 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax AUTOMOTIVE MOSFET S Description
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l l l l l l Advanced Process Technology Surface Mount (IRFZ44ES) Low-profile through-hole (IRFZ44EL) 75 C Operating Temperature Fast Switching Fully Avalanche Rated PRELIMINARY G PD - 9.74 IRFZ44ES/L HEXFET
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PD - 95093A IRLR803VPbF N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Low Conduction Losses Low Switching Losses Minimizes Parallel MOSFETs for high current applications 00%
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PD -95487A Typical Applications l Industrial Motor Drive Benefits l Ultra Low On-Resistance l Dynamic dv/dt Rating l 75 C Operating Temperature l Fast Switching l Repetitive Avalanche Allowed up to Tjmax
More informationSMPS MOSFET. V DSS R DS(on) max I D. Absolute Maximum Ratings Symbol Parameter Max 20 V V GS A I DM. 90 W P A = 70 C Maximum Power Dissipation e
l High Frequency Buck Converters for Computer Processor Power l 0% R G Tested l Lead-Free Benefits l Ultra-Low R DS(on) l Very Low Gate Impedance l Fully Characterized Avalanche Voltage and Current SMPS
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Ultra Low On-Resistance P-hannel MOSFET Surface Mount vailable in Tape & Reel P- 94022 IRF7425 HEXFET Power MOSFET Ω) I V SS R S(on) max (mω) 20V 8.2@V GS = -4.5V -5 3@V GS = -2.5V -3 escription These
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SMPS MOSFET Applications l Switch Mode Power Supply (SMPS) l Uninterruptible Power Supply l High Speed Power Switching l ZVS and High Frequency Circuit l PWM Inverters Benefits l Low Gate Charge Qg results
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PD - 95071A SMPS MOSFET IRFR3708PbF IRFU3708PbF Applications l High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial Use l High Frequency Buck Converters for
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