SMPS MOSFET. Symbol Parameter Max. Units

Transcription

1 P B SMPS MOSFET IRF7455 HEXFET Power MOSFET pplications V SS R S(on) max I l High Frequency C-C Converters with Synchronous Rectification 30V Ω 15 Benefits l l l Ultra-Low R S(on) at 4.5V V GS Low Charge and Low Gate Impedance to Reduce Switching Losses Fully Characterized valanche Voltage and Current S S S G Top View SO-8 bsolute Maximum Ratings Symbol Parameter Max. Units V S rain-source Voltage 30 V V GS Gate-to-Source Voltage ± 12 V T = 25 C Continuous rain Current, V V 15 T = 70 C Continuous rain Current, V V 12 I M Pulsed rain Current 120 = 25 C Maximum Power issipationƒ 2.5 W = 70 C Maximum Power issipationƒ 1.6 W Linear erating Factor 0.02 W/ C T J, T STG Junction and Storage Temperature Range -55 to C Thermal Resistance Parameter Max. Units R θj Maximum Junction-to-mbient 50 C/W Typical SMPS Topologies l Telecom 48V Input Converters with Logic-Level riven Synchronous Rectifiers Notes through are on page /20/00

2 T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)SS rain-to-source Breakdown Voltage 30 V V GS = 0V, I = 250µ V (BR)SS/ T J Breakdown Voltage Temp. Coefficient V/ C Reference to 25 C, I = 1m V GS = V, I = 15 Ω R S(on) Static rain-to-source On-Resistance V GS = 4.5V, I = V GS = 2.8V, I = 3.5 V GS(th) Gate Threshold Voltage V V S = V GS, I = 250µ 20 V I SS rain-to-source Leakage Current µ S = 24V, V GS = 0V V S = 24V, V GS = 0V, T J = 125 C Gate-to-Source Forward Leakage 200 V GS = 12V I GSS n Gate-to-Source Reverse Leakage -200 V GS = -12V T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions g fs Forward Transconductance 44 S V S = V, I = 15 Q g Total Gate Charge I = 15 Q gs Gate-to-Source Charge nc V S = 24V Q gd Gate-to-rain ("Miller") Charge V GS = 5.0V, ƒ t d(on) Turn-On elay Time 17 V = 15V t r Rise Time 18 ns I = 1.0 t d(off) Turn-Off elay Time 51 R G = 6.0Ω t f Fall Time 44 V GS = 4.5V ƒ C iss Input Capacitance 3480 V GS = 0V C oss Output Capacitance 870 V S = 25V C rss Reverse Transfer Capacitance pf ƒ = 1.0MHz valanche Characteristics Parameter Typ. Max. Units E S Single Pulse valanche Energy 200 mj I R valanche Current 15 E R Repetitive valanche Energy 0.25 mj iode Characteristics Parameter Min. Typ. Max. Units Conditions I S Continuous Source Current MOSFET symbol 2.5 (Body iode) showing the G I SM Pulsed Source Current integral reverse 120 (Body iode) p-n junction diode. S V S iode Forward Voltage 1.2 V T J = 25 C, I S = 2.5, V GS = 0V ƒ t rr Reverse Recovery Time ns T J = 25 C, I F = 2.5 Q rr Reverse RecoveryCharge nc di/dt = /µs ƒ 2

3 I, rain-to-source Current () 0 VGS TOP V 4.5V 3.7V 3.5V 3.3V 3.0V 2.7V BOTTOM 2.5V 2.5V 20µs PULSE WITH T J = 25 C V S, rain-to-source Voltage (V) I, rain-to-source Current () 0 VGS TOP V 4.5V 3.7V 3.5V 3.3V 3.0V 2.7V BOTTOM 2.5V 2.5V 20µs PULSE WITH T J = 150 C V S, rain-to-source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics I = 15 I, rain-to-source Current () T J = 150 C T J = 25 C V S= 15V 20µs PULSE WITH V GS, Gate-to-Source Voltage (V) R S(on), rain-to-source On Resistance (Normalized) V GS= V T J, Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 3

4 C, Capacitance (pf) 6000 VGS = 0V, f = 1MHz Ciss = Cgs + Cgd, C ds SHORTE Crss = Cgd 5000 Coss = Cds + Cgd 4000 C iss C oss 0 C rss 0 1 V S, rain-to-source Voltage (V) V GS, Gate-to-Source Voltage (V) I = 15 V S = 24V FOR TEST CIRCUIT SEE FIGURE Q G, Total Gate Charge (nc) Fig 5. Typical Capacitance Vs. rain-to-source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage I S, Reverse rain Current () 0 1 T J = 150 C T J = 25 C V GS = 0 V V S,Source-to-rain Voltage (V) I, rain Current () 0 OPERTION IN THIS RE LIMITE BY R S(on) us us 1ms T = 25 C ms TJ = 150 C Single Pulse V S, rain-to-source Voltage (V) Fig 7. Typical Source-rain iode Forward Voltage Fig 8. Maximum Safe Operating rea 4

5 16 V S R I, rain Current () Fig a. Switching Time Test Circuit V S 90% R G V GS V Pulse Width 1 µs uty Factor 0.1 %.U.T. + - V T, Case Temperature ( C C) Fig 9. Maximum rain Current Vs. Case Temperature % V GS t d(on) t r t d(off) t f Fig b. Switching Time Waveforms Thermal Response (Z thj ) = SINGLE PULSE (THERML RESPONSE) Notes: 1. uty factor = t 1 / t 2 2. Peak T J = P M x Z thj + T t 1, Rectangular Pulse uration (sec) PM t1 t2 Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-mbient 5

6 R S (on), rain-to-source On Resistance ( Ω) R S(on), rain-to -Source On Resistance ( Ω) IRF V GS = 4.5V V GS = V I = I, rain Current () V GS, Gate -to -Source Voltage (V) Fig 12. On-Resistance Vs. rain Current Fig 13. On-Resistance Vs. Gate Voltage Current Regulator Same Type as.u.t. 12V I S V GS.2µF 50KΩ 3m.3µF.U.T. I G I Current Sampling Resistors + V - S V GS Fig 13a&b. Basic Gate Charge Test Circuit and Waveform tp V (B R)SS R G V S 20V V G tp Q GS L.U.T I S 0.01Ω Q G Q G Charge 15V RIVER + - V E S, Single Pulse valanche Energy (mj) TOP BOTTOM I Starting T, Junction Temperature ( J C) Fig 14a&b. Unclamped Inductive Test circuit Fig 14c. Maximum valanche Energy and Waveforms Vs. rain Current 6

7 SO-8 Package etails 5 E B H 0.25 (.0) M M e 6X θ e1 θ - C - 0. (.004) 1 B 8X 0.25 (.0) M C S B S NOTES: 1. IMENSIONING N TOLERNCING PER NSI Y14.5M CONTROLLING IMENSION : INCH. 3. IM ENSIONS RE SHOW N IN MILLIMETERS (INCHES). 4. OUTLINE CONFORM S TO JEEC OUTLINE MS-012. L 8X K x 45 5 IMENSION OES NOT INCLUE MOL PROTRUSIONS MOL PROTRUSIONS NOT TO EXCEE 0.25 (.006). 6 IMENSIONS IS THE LENGTH OF LE FOR SOLERING TO SUBSTRTE.. 6 C 8X IM INCH ES M ILLIMET ERS MIN MX MIN M X B C E e.050 BSIC 1.27 BSIC e1.025 BSIC BSIC H K L θ RECOMMENE FOOTPRINT 0.72 (.028 ) 8X 6.46 (.255 ) 1.27 (.050 ) 3X 1.78 (.070) 8X SO-8 Part Marking 7

8 SO-8 Tape and Reel TERMINL NUMBER (.484 ) 11.7 (.461 ) 8.1 (.318 ) 7.9 (.312 ) FEE IRECTION NOTES: 1. CONTROLLING IMENSION : MILLIMETER. 2. LL IMENSIONS RE SHOW N IN MILLIMETERS(INC HES). 3. OUTLINE CONFORMS TO EI-481 & EI (12.992) MX. Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting T J = 25 C, L = 1.8mH R G = 25Ω, I S = 15. NOTES : 1. CONTROLLING IMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EI-481 & EI (.566 ) (.488 ) ƒ Pulse width 300µs; duty cycle 2%. When mounted on 1 inch square copper board, t< sec IR WORL HEQURTERS: 233 Kansas St., El Segundo, California 90245, US Tel: (3) IR EUROPEN REGIONL CENTER: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: (0) IR CN: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) IR GERMNY: Saalburgstrasse 157, Bad Homburg Tel: (0) IR ITLY: Via Liguria 49, 71 Borgaro, Torino Tel: IR JPN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0) IR SOUTHEST SI: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore Tel: (0) IR TIWN:16 Fl. Suite. 207, Sec. 2, Tun Haw South Road, Taipei, 673 Tel: 886-(0) ata and specifications subject to change without notice. 4/00 8