Absolute Maximum Ratings Parameter Symbol IRF7809A V Units Drain-Source Voltage V DS. 30 V Gate-Source Voltage V GS = 25 C I D

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1 P-900 IRF7809AV N-Channel Application-Specific MOSFETs Ideal for CPU Core C-C Converters Low Conduction Losses Low Switching Losses Minimizes Parallel MOSFETs for high current applications S S A escription This new device employs advanced HEXFET Power MOSFET technology to achieve an unprecedented balance of on-resistance and gate charge. The reduced conduction and switching losses make it ideal for high efficiency C-C converters that power the latest generation of microprocessors. SO-8 S G Top View The IRF7809AV has been optimized for all parameters that are critical in synchronous buck converters including R S(on), gate charge and Cdv/dt-induced turn-on immunity. The IRF7809AV offers particulary low R S(on) and high Cdv/dt immunity for synchronous FET applications. The package is designed for vapor phase, infra-red, convection, or wave soldering techniques. Power dissipation of greater than 2W is possible in a typical PCB mount application. EVICE CHARACTERISTICS IRF7809AV R S(on) 7.0mΩ Q G 41nC Q sw 14nC Q oss 30nC Absolute Maximum Ratings Parameter Symbol IRF7809A V Units rain-source Voltage V S 30 V Gate-Source Voltage V GS ±12 Continuous rain or Source T A = 25 C I 13.3 Current (V GS 4.5V) T L = 90 C 14.6 A Pulsed rain Current I M 0 Power issipation T A = 25 C P 2.5 W T L = 90 C 3.0 Junction & Storage Temperature Range T J, T STG 55 to 150 C Continuous Source Current (Body iode) I S 2.5 A Pulsed Source Current I SM 50 Thermal Resistance Parameter Max. Units Maximum Junction-to-Ambientƒ R θja 50 C/W Maximum Junction-to-Lead R θjl 20 C/W /26/00

2 Electrical Characteristics Parameter Min Typ Max Units Conditions rain-to-source BV SS 30 V V GS = 0V, I = 250µA Breakdown Voltage Static rain-source R S(on) mω V GS = 4.5V, I = 15A on Resistance Gate Threshold Voltage V GS(th) 1.0 V V S = V GS,I = 250µA rain-source Leakage I SS 30 V S = 24V, V GS = 0 Current Current* 150 µa V S = 24V, V GS = 0, Tj = 0 C Gate-Source Leakage I GSS ±0 na V GS = ±12V Current* Total Gate Chg Cont FET Q G V GS =5V, I =15A, V S =20V Total Gate Chg Sync FET Q G V GS = 5V, V S < 0mV Pre-Vth Q GS1 7.0 V S = 20V, I = 15A Gate-Source Charge Post-Vth Q GS2 2.3 nc Gate-Source Charge Gate to rain Charge Q G 12 I =15A, V S =16V Switch Chg(Q gs2 + Q gd ) Q sw Output Charge* Q oss V S = 16V, V GS = 0 Gate Resistance R G 1.5 Ω Turn-on elay Time t d (on) 14 V = 16V, I = 15A Rise Time t r 36 ns V GS = 5V Turn-off elay Time t d (off) 96 Clamped Inductive Load Fall Time t f Input Capacitance C iss 3780 Output Capacitance C oss 60 pf V S = 16V, V GS = 0 Reverse Transfer Capacitance C rss 130 Source-rain Rating & Characteristics Parameter Min Typ Max Units Conditions iode Forward V S 1.3 V I S = 15A, V GS = 0V Voltage* Reverse Recovery Charge Q rr 120 nc di/dt ~ 700A/µs V S = 16V, V GS = 0V, I S = 15A Reverse Recovery Q rr(s) 150 nc di/dt = 700A/µs Charge (with Parallel (with BQ040) Schottky) V S = 16V, V GS = 0V, I S = 15A Notes: Repetitive rating; pulse width limited by max. junction temperature. Pulse width 400 µs; duty cycle 2%. ƒ When mounted on 1 inch square copper board, t < sec. Typ = measured - Q oss Typical values measured at V GS = 4.5V, I F = 15A. 2

3 I, rain-to-source Current (A) 00 0 VGS TOP V 4.5V 3.7V 3.5V 3.3V 3.0V 2.7V BOTTOM 2.5V 2.5V 20µs PULSE WITH T J = 25 C V S, rain-to-source Voltage (V) I, rain-to-source Current (A) 00 0 VGS TOP V 4.5V 3.7V 3.5V 3.3V 3.0V 2.7V BOTTOM 2.5V 2.5V 20µs PULSE WITH T J = 150 C V S, rain-to-source Voltage (V) Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics I = 15A I, rain-to-source Current (A) 0 T J = 150 C T J = 25 C V S= 15V 20µs PULSE WITH V GS, Gate-to-Source Voltage (V) R S(on), rain-to-source On Resistance (Normalized) V GS= V T J, Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 3

4 C, Capacitance (pf) VGS = 0V, f = 1MHz Ciss = Cgs + Cgd, C ds Crss = Cgd Coss = Cds + Cgd C iss C oss SHORTE V GS, Gate-to-Source Voltage (V) I = 15A V S = 20V C rss V S, rain-to-source Voltage (V) Q G, Total Gate Charge (nc) Fig 5. Typical Capacitance Vs. rain-to-source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage I S, Reverse rain Current (A) T J = 150 C T J = 25 C V GS = 0 V V S,Source-to-rain Voltage (V) I, rain Current (A) 00 0 OPERATION IN THIS AREA LIMITE BY R S(on) us 0us 1ms T = 25 C ms A TJ = 150 C Single Pulse V S, rain-to-source Voltage (V) Fig 7. Typical Source-rain iode Forward Voltage Fig 8. Maximum Safe Operating Area 4

5 16 V S R I, rain Current (A) Fig a. Switching Time Test Circuit V S 90% R G V GS V Pulse Width 1 µs uty Factor 0.1 %.U.T. + - V T, Case Temperature ( C C) Fig 9. Maximum rain Current Vs. Case Temperature % V GS t d(on) t r t d(off) t f Fig b. Switching Time Waveforms 0 Thermal Response (Z thja ) = SINGLE PULSE (THERMAL RESPONSE) Notes: 1. uty factor = t 1 / t 2 2. Peak T J = P M x Z thja + TA t 1, Rectangular Pulse uration (sec) PM t1 t2 Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 5

6 R S (on), rain-to-source On Resistance ( Ω) R S(on), rain-to -Source On Resistance ( Ω) IRF7809AV V GS = 4.5V V GS = V I = 15A I, rain Current (A) V GS, Gate -to -Source Voltage (V) Fig 12. On-Resistance Vs. rain Current Fig 13. On-Resistance Vs. Gate Voltage Current Regulator Same Type as.u.t. 12V I AS V GS.2µF 50KΩ 3mA.3µF.U.T. I G I Current Sampling Resistors + V - S V GS Fig 13a&b. Basic Gate Charge Test Circuit and Waveform tp V (B R)SS R G V S 20V V G tp Q GS L.U.T I AS 0.01Ω Q G Q G Charge 15V RIVER + - V A E AS, Single Pulse Avalanche Energy (mj) TOP BOTTOM I 6.7A 9.5A 15A Starting T, Junction Temperature ( J C) Fig 14a&b. Unclamped Inductive Test circuit Fig 14c. Maximum Avalanche Energy and Waveforms Vs. rain Current 6

7 SO-8 Package etails 5 E - A - - B H 0.25 (.0) M A M e 6X θ e1 θ A - C - 0. (.004) A1 B 8X 0.25 (.0) M C A S B S NOTES: 1. IMENSIONING AN TOLERANCING PER ANSI Y14.5M CONTROLLING IMENSION : INCH. 3. IM ENSIONS ARE SHOW N IN MILLIMETERS (INCHES). 4. OUTLINE CONFORM S TO JEEC OUTLINE MS-012AA. L 8X K x 45 5 IMENSION OES NOT INCLUE MOL PROTRUSIONS MOL PROTRUSIONS NOT TO EXCEE 0.25 (.006). 6 IMENSIONS IS THE LENGTH OF LEA FOR SOLERING TO A SUBSTRATE.. 6 C 8X IM INCH ES M ILLIMET ERS MIN MAX MIN M AX A A B C E e.050 BASIC 1.27 BASIC e1.025 BASIC BASIC H K L θ RECOMMENE FOOTPRINT 0.72 (.028 ) 8X 6.46 (.255 ) 1.27 (.050 ) 3X 1.78 (.070) 8X SO-8 Part Marking 7

8 SO-8 Tape and Reel TERMINAL NUMBER (.484 ) 11.7 (.461 ) 8.1 (.318 ) 7.9 (.312 ) FEE IRECTION NOTES: 1. CO N TRO LLING IM E NSIO N : M ILLIM ETER. 2. ALL IM EN SIO N S ARE SHO W N IN M ILLIM E TE RS (IN CH ES). 3. OUTLINE CONFORMS TO EIA-481 & EIA (12.992) MAX. NOTES : 1. CONTROLLING IMENSION : MILLIMETER. 2. OUTLINE CONFORMS TO EIA-481 & EIA (.566 ) (.488 ) IR WORL HEAQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (3) IR EUROPEAN REGIONAL CENTER: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: (0) IR CANAA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) IR GERMANY: Saalburgstrasse 157, Bad Homburg Tel: (0) IR ITALY: Via Liguria 49, 071 Borgaro, Torino Tel: IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0) IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore Tel: (0) IR TAIWAN:16 Fl. Suite. 207, Sec. 2, Tun Haw South Road, Taipei, 673 Tel: 886-(0) ata and specifications subject to change without notice. /00 8

9 This datasheet has been download from: atasheets for electronics components.