SMPS MOSFET. V DSS R DS(on) max I D

Transcription

1 Benefits l Ultra-Low Gate Impedance l l Very Low R DS(on) Fully Characterized Avalanche Voltage and Current SMPS MOSFET Applications l High Frequency DC-DC Isolated Converters with Synchronous Rectification for Telecom and Industrial use l High Frequency Buck Converters for Computer Processor Power Absolute Maximum Ratings IRF3704 IRF3704S IRF3704L HEXFET Power MOSFET V DSS R DS(on) max I D 20V 9.0mΩ 77A TO-220AB IRF3704 Symbol Parameter Max. Units V DS Drain-Source Voltage 20 V V GS Gate-to-Source Voltage ± 20 V I T C = 25 C Continuous Drain Current, V V 77 I T C = 70 C Continuous Drain Current, V V 64 A I DM Pulsed Drain Current 308 P C = 25 C Maximum Power Dissipationƒ 87 W P C = 70 C Maximum Power Dissipationƒ 61 W Linear Derating Factor 0.59 mw/ C T J, T STG Junction and Storage Temperature Range -55 to C * When mounted on 1" square PCB (FR-4 or G- Material). For recommended footprint and soldering techniques refer to application note #AN-994 D 2 Pak IRF3704S PD B TO-262 IRF3704L Thermal Resistance Parameter Typ. Max. Units R θjc Junction-to-Case 1.73 R θcs Case-to-Sink, Flat, Greased Surface 0.50 C/W R θja Junction-to-Ambient 62 R θja Junction-to-Ambient (PCB mount)* 40 Notes through are on page 1 8/22/00

2 T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)DSS Drain-to-Source Breakdown Voltage 20 V V GS = 0V, I D = 250µA V (BR)DSS/ T J Breakdown Voltage Temp. Coefficient V/ C Reference to 25 C, I D = 1mA V GS = V, I D = 15A ƒ R DS(on) Static Drain-to-Source On-Resistance mω V GS = 4.5V, I D = 12A ƒ V GS(th) Gate Threshold Voltage V V DS = V GS, I D = 250µA 20 V µa DS = 16V, V GS = 0V I DSS Drain-to-Source Leakage Current 0 V DS = 16V, V GS = 0V, T J = 125 C I GSS Gate-to-Source Forward Leakage 200 V GS = 16V na Gate-to-Source Reverse Leakage -200 V GS = -16V T J = 25 C (unless otherwise specified) Symbol Parameter Min. Typ. Max. Units Conditions g fs Forward Transconductance 42 S V DS = V, I D = 57A Q g Total Gate Charge 19 I D = 28.4A Q gs Gate-to-Source Charge 8.1 nc V DS = V Q gd Gate-to-Drain ("Miller") Charge 6.4 V GS = 4.5V ƒ Q oss Output Gate Charge V GS = 0V, V DS = V t d(on) Turn-On Delay Time 8.4 V DD = V t r Rise Time 98 I ns D = 28.4A t d(off) Turn-Off Delay Time 12 R G = 1.8Ω t f Fall Time 5.0 V GS = 4.5V ƒ C iss Input Capacitance 1996 V GS = 0V C oss Output Capacitance 85 V DS = V C rss Reverse Transfer Capacitance 155 pf ƒ = 1.0MHz Avalanche Characteristics Symbol Parameter Typ. Max. Units E AS Single Pulse Avalanche Energy 216 mj I AR Avalanche Current 71 A Diode Characteristics Symbol Parameter Min. Typ. Max. Units Conditions D I S Continuous Source Current MOSFET symbol (Body Diode) 77 showing the A I G SM Pulsed Source Current integral reverse 308 (Body Diode) p-n junction diode. S V T V SD Diode Forward Voltage J = 25 C, I S = 35.5A, V GS = 0V ƒ 0.82 T J = 125 C, I S = 35.5A, V GS = 0V ƒ t rr Reverse Recovery Time ns T J = 25 C, I F = 35.5A, V R =20V Q rr Reverse Recovery Charge nc di/dt = 0A/µs ƒ t rr Reverse Recovery Time ns T J = 125 C, I F = 35.5A, V R =20V Q rr Reverse Recovery Charge nc di/dt = 0A/µs ƒ 2

3 I D, Drain-to-Source Current (A) I D, Drain-to-Source Current (A) IRF3704/3704S/3704L 00 0 VGS TOP.0V 9.0V 8.0V 7.0V 6.0V 5.0V 4.5V BOTTOM 3.5V 00 0 VGS TOP.0V 9.00V 8.0V 7.0V 6.0V 5.0V 4.5V BOTTOM 3.5V 3.5V 3.5V 20µs PULSE WIDTH Tj = 25 C V DS, Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1 20µs PULSE WIDTH Tj = 175 C V DS, Drain-to-Source Voltage (V) Fig 2. Typical Output Characteristics I D, Drain-to-Source Current (A) 00 0 T J = 25 C T = 175 J C V DS= 15V 20µs PULSE WIDTH V GS, Gate-to-Source Voltage (V) R DS(on), Drain-to-Source On Resistance (Normalized) 2.0 I D = 77A V GS = V T J, Junction Temperature ( C) Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance Vs. Temperature 3

4 C, Capacitance (pf) VGS = 0V, f = 1MHz Ciss = Cgs + Cgd, C ds Crss = Cgd Coss = Cds + Cgd C iss C oss SHORTED V GS, Gate-to-Source Voltage (V) I = D 28.4A V DS = V C rss V DS, Drain-to-Source Voltage (V) Q G, Total Gate Charge (nc) Fig 5. Typical Capacitance Vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge Vs. Gate-to-Source Voltage I SD, Reverse Drain Current (A) T J = 175 C T J = 25 C V GS = 0 V V SD,Source-to-Drain Voltage (V) I D, Drain Current (A) 00 0 OPERATION IN THIS AREA LIMITED BY R DS(on) us 0us 1ms ms TC = 25 C TJ = 175 C Single Pulse V DS, Drain-to-Source Voltage (V) Fig 7. Typical Source-Drain Diode Forward Voltage Fig 8. Maximum Safe Operating Area 4

5 90 V DS R D 75 LIMITED BY PACKAGE R G V GS D.U.T. + - V DD I D, Drain Current (A) Fig a. Switching Time Test Circuit V DS 90% V Pulse Width 1 µs Duty Factor 0.1 % T, Case Temperature ( C C) Fig 9. Maximum Drain Current Vs. Case Temperature % V GS t d(on) t r t d(off) t f Fig b. Switching Time Waveforms Thermal Response (Z thjc ) D = SINGLE PULSE (THERMAL RESPONSE) Notes: 1. Duty factor D = t 1 / t 2 2. Peak T J = P DM x Z thjc + TC t 1, Rectangular Pulse Duration (sec) PDM t1 t2 Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient 5

6 R DS ( on ), Drain-to-Source On Resistance ( Ω ) R DS(on), Drain-to -Source On Resistance (Ω) IRF3704/3704S/3704L VGS = 4.5V I D = 35.5A 0.0 VGS = V I D, Drain Current ( A ) V GS, Gate -to -Source Voltage (V) Fig 12. On-Resistance Vs. Drain Current Fig 13. On-Resistance Vs. Gate Voltage Current Regulator Same Type as D.U.T. 12V I AS V GS.2µF 50KΩ 3mA tp.3µf D.U.T. I G I D Current Sampling Resistors V (B R)D SS + V - DS V GS R G V DS 20V V G tp Q GS L D.U.T I AS 0.01Ω Q G Q GD Charge Fig 14a&b. Basic Gate Charge Test circuit and Waveforms 15V DRIVER + - V DD A E AS, Single Pulse Avalanche Energy (mj) I D TOP 11.6A 23.8A BOTTOM 28.4A Starting T, Junction Temperature ( J C) Fig 15a&b. Unclamped Inductive Test circuit and Waveforms Fig 15c. Maximum Avalanche Energy Vs. Drain Current 6

7 TO-220AB Package Outline Dimensions are shown in millimeters (inches) 2.87 (.1 13) 2.62 (.1 03).54 (.415).29 (.405) 3.78 (.149) 3.54 (.139) - A (.1 85) 4.20 (.1 65) - B (.052) 1.22 (.048) (.600) (.584) (.255) 6. (.240) (.045) M IN LEAD ASSIGNMENTS 1 - G ATE 2 - D RA IN 3 - S OU R CE 4 - D RA IN (.5 55) (.5 30) 4.06 (.16 0) 3.55 (.14 0) 3X 1.40 (.055) 1.15 (.045) 2.54 (.0) 3X 0.93 (.03 7) 0.69 (.02 7) 0.36 (.0 14) M B A M 3X 2.92 (.115) 2.64 (.4) 0.55 (.022) 0.46 (.018) 2X NOTES: 1 D IME NS IO NING & TO LE RA NC ING PE R A NSI Y14.5M, O U TLINE C O NFO R M S TO JE DEC O UTLIN E TO -220A B. 2 C O N TR O LLING D IM EN SIO N : INC H 4 HE ATSIN K & LE AD M EASU R EM EN TS D O NOT INCLUDE BURRS. TO-220AB Part Marking Information EXAMPLE : THIS IS AN IRF W ITH ASSEMBLY LOT C ODE 9B1M INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE IRF B 1M A PART NUMBER DATE CODE (YYWW) YY = YEAR W W = W EEK 7

8 D 2 Pak Package Outline Dimensions are shown in millimeters (inches) 1.40 (.055) M AX..54 (.415).29 (.405) - A (.185) 4.20 (.165) - B (.052) 1.22 (.048).16 (.400) REF (.255) 6.18 (.243) 1.78 (.070) 1.27 (.050) (.6) (.580) 2.79 (.1) 2.29 (.090) 5.28 (.208) 4.78 (.188) 2.61 (.3) 2.32 (.091) 3X 1.40 (.055) 1.14 (.045) 5.08 (.200) 3X 0.93 (.037) 0.69 (.027) 0.55 (.022) 0.46 (.018) 1.39 (.055) 1.14 (.045) 8.89 (.350) REF (.0) M B A M MINIMUM RECOMMENDED FOOTPRINT (.450) NOTES: 1 DIMENSIONS AFTER SOLDER DIP. 2 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, CONTROLLING DIMENSION : INCH. 4 HEATSINK & LEAD DIMENSIONS DO NOT INCLUDE BURRS. LEAD ASSIGNMENTS 1 - GATE 2 - DRAIN 3 - SOURCE 8.89 (.350) 3.81 (.150) (.700) 2.08 (.082) 2X 2.54 (.0) 2X D 2 Pak Part Marking Information INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE F530S B 1M PART NUMBER DATE CODE (YYW W ) YY = YEAR WW = WEEK A 8

9 TO-262 Package Outline Dimensions are shown in millimeters (inches) TO-262 Part Marking Information 9

10 D 2 Pak Tape & Reel Information Dimensions are shown in millimeters (inches) TRR 1.60 (.063) 1.50 (.059) 4. (.161) 3.90 (.153) 1.60 (.063) 1.50 (.059) (.0145) (.0135) FEED DIRECTION TRL 1.85 (.073) 1.65 (.065).90 (.429).70 (.421) (.457) (.449) 16. (.634) (.626) 1.75 (.069) 1.25 (.049) (.609) (.601) (.957) (.941) 4.72 (.136) 4.52 (.178) FEED DIRECTION (.532) (.504) (1.079) (.941) (14.173) MAX (2.362) MIN. NOTES : 1. COMFORMS TO EIA CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION HUB. 4. INCLUDES FLANGE OUTER EDGE (1.039) (.961) (1.197) MA X. 4 Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting T J = 25 C, L = 0.5 mh R G = 25Ω, I AS = 28.4 A. ƒ Pulse width 300µs; duty cycle 2%. This is only applied to TO-220AB package Calculated continuous current based on maximum allowable junction temperature. Package limitation current is 75A. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (3) IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: (0) IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) IR GERMANY: Saalburgstrasse 157, Bad Homburg Tel: (0) IR ITALY: Via Liguria 49, 071 Borgaro, Torino Tel: IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0) IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore Tel: (0) IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, 673 Tel: 886-(0) Data and specifications subject to change without notice. 8/00

11 Note: For the most current drawings please refer to the IR website at: