SMPS MOSFET. V DSS R DS(on) max I D

Transcription

1 Applications l High frequency DC-DC converters SMPS MOSFET PD IRFB42N20D IRFS42N20D IRFSL42N20D HEXFET Power MOSFET V DSS R DS(on) max I D 200V 0.055Ω 42.6A Benefits l Low Gate-to-Drain Charge to Reduce Switching Losses l Fully Characterized Capacitance Including Effective C OSS to Simplify Design, (See App. Note AN1001) l Fully Characterized Avalanche Voltage and Current TO-220AB IRFB42N20D D 2 Pak IRFS42N20D TO-262 IRFSL42N20D Absolute Maximum Ratings Parameter Max. Units I T C = 25 C Continuous Drain Current, V 10V 42.6 I T C = 100 C Continuous Drain Current, V 10V 30 A I DM Pulsed Drain Current 170 P A = 25 C Power Dissipation 3.8 W P C = 25 C Power Dissipation 300 Linear Derating Factor 2 W/ C V GS Gate-to-Source Voltage ± 30 V dv/dt Peak Diode Recovery dv/dt ƒ TBD V/ns T J Operating Junction and -55 to T STG Storage Temperature Range C Soldering Temperature, for 10 seconds 260 (1.6mm from case ) Mounting torqe, 6-32 or M3 screw 10 lbf in (1.1N m) Typical SMPS Topologies l Telecom 48V input DC-DC Active Clamp Reset Forward Converter Notes through are on page /05/01

2 IRFB/IRFS/IRFSL42N20D T J = 25 C (unless otherwise specified) T J = 25 C (unless otherwise specified) Parameter Min. Typ. Max. Units Conditions V (BR)DSS Drain-to-Source Breakdown Voltage 200 V V GS = 0V, I D = 250µA V (BR)DSS/ T J Breakdown Voltage Temp. Coefficient TBD V/ C Reference to 25 C, I D = 1mA R DS(on) Static Drain-to-Source On-Resistance Ω V GS = 10V, I D = 25.5A V GS(th) Gate Threshold Voltage V V DS = V GS, I D = 250µA I DSS Drain-to-Source Leakage Current 25 V µa DS = 200V, V GS = 0V 250 V DS = 160V, V GS = 0V, T J = 150 C I GSS Gate-to-Source Forward Leakage 100 V GS = 30V na Gate-to-Source Reverse Leakage -100 V GS = -30V Parameter Min. Typ. Max. Units Conditions g fs Forward Transconductance TBD S V DS = 25V, I D = 25.5A Q g Total Gate Charge 103 I D = 25.5A Q gs Gate-to-Source Charge 26 nc V DS = 160V Q gd Gate-to-Drain ("Miller") Charge 48 V GS = 10V t d(on) Turn-On Delay Time TBD V DD = 100V t r Rise Time TBD ns I D = 25.5A t d(off) Turn-Off Delay Time TBD R G = TBDΩ t f Fall Time TBD V GS = 10V C iss Input Capacitance 3470 V GS = 0V C oss Output Capacitance 560 V DS = 25V C rss Reverse Transfer Capacitance 120 pf ƒ = 1.0MHz C oss Output Capacitance TBD V GS = 0V, V DS = 1.0V, ƒ = 1.0MHz C oss Output Capacitance TBD V GS = 0V, V DS = 160V, ƒ = 1.0MHz C oss eff. Effective Output Capacitance TBD V GS = 0V, V DS = 0V to 160V Avalanche Characteristics Parameter Typ. Max. Units E AS Single Pulse Avalanche Energy TBD mj I AR Avalanche Current 25.5 A E AR Repetitive Avalanche Energy 30 mj Thermal Resistance Parameter Typ. Max. Units R θjc Junction-to-Case 0.5 R θcs Case-to-Sink, Flat, Greased Surface 0.50 C/W R θja Junction-to-Ambient 62 R θja Junction-to-Ambient 40 Diode Characteristics Parameter Min. Typ. Max. Units Conditions D I S Continuous Source Current MOSFET symbol 42.6 (Body Diode) showing the A G I SM Pulsed Source Current integral reverse 170 (Body Diode) p-n junction diode. S V SD Diode Forward Voltage 1.3 V T J = 25 C, I S = 25.5A, V GS = 0V t rr Reverse Recovery Time TBD TBD ns T J = 25 C, I F = 25.5A Q rr Reverse RecoveryCharge µc di/dt = 100A/µs t on Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L S +L D ) 2

3 IRFB/IRFS/IRFSL42N20D TO-220AB Package Outline Dimensions are shown in millimeters (inches) 2.87 (.1 13) 2.62 (.1 03) (.415) (.405) 3.78 (.149) 3.54 (.139) - A (.18 5) 4.20 (.16 5) - B (.052) 1.22 (.048) (.600) (.584) (.255) 6.10 (.240) (.045) M IN LEAD ASSIGNMENTS 1 - G ATE 2 - D RA IN 3 - S OU RC E 4 - D RA IN (.5 55) (.5 30) 4.06 (.160) 3.55 (.140) 1.40 (.05 5) 1.15 (.04 5) 2.54 (.100) 0.93 (.0 37) 0.69 (.0 27) 0.36 (.014) M B A M 2.92 (.115) 2.64 (.104) 0.55 (.022) 0.46 (.018) 2X NOTES: 1 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, O UTLINE CONFORMS TO JEDEC OUTLINE TO-220AB. 2 C O N TR O LLIN G D IM E NS ION : INC H 4 H EATS IN K & LEA D M E ASUR E M ENTS D O NOT INCLUDE BURRS. TO-220AB Part Marking Information EXAMPLE : THIS IS AN IRF1010 W ITH ASSEMBLY LOT CO DE 9B1M INTERNATIONAL REC TIFIER LOGO ASSEMBLY LOT COD E IRF B 1M A PART NUMBER DATE CODE (YYWW) YY = YEAR WW = WEEK 3

4 IRFB/IRFS/IRFSL42N20D D 2 Pak Package Outline 1.40 (.055) M AX (.415) (.405) - A (.185) 4.20 (.165) - B (.052) 1.22 (.048) (.400) REF (.255) 6.18 (.243) 1.78 (.070) 1.27 (.050) (.610) (.580) 2.79 (.110) 2.29 (.090) 5.28 (.208) 4.78 (.188) 2.61 (.103) 2.32 (.091) 1.40 (.055) 1.14 (.045) 5.08 (.200) 0.93 (.037) 0.69 (.027) 0.55 (.022) 0.46 (.018) 1.39 (.055) 1.14 (.045) 8.89 (.350) REF (.010) M B A M MINIMUM RECOMMENDED FOOTPRINT (.450) NOTES: 1 DIMENSIONS AFTER SOLDER DIP. 2 DIMENSIONING & TOLERANCING PER ANSI Y14.5M, CONTROLLING DIMENSION : INCH. 4 HEATSINK & LEAD DIMENSIONS DO NOT INCLUDE BURRS. LEAD ASSIGNMENTS 1 - GATE 2 - DRAIN 3 - SOURCE 8.89 (.350) 3.81 (.150) (.700) 2.08 (.082) 2X 2.54 (.100) 2X D 2 Pak Part Marking Information INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE F530S B 1M PART NUMBER DATE CODE (YYW W ) YY = YEAR WW = WEEK 4 A

5 IRFB/IRFS/IRFSL42N20D TO-262 Package Outline TO-262 Part Marking Information 5

6 IRFB/IRFS/IRFSL42N20D D 2 Pak Tape & Reel Information TRR 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) 1.60 (.063) 1.50 (.059) (.0145) (.0135) FEED DIRECTION TRL 1.85 (.073) 1.65 (.065) (.429) (.421) (.457) (.449) (.634) (.626) 1.75 (.069) 1.25 (.049) (.609) (.601) (.957) (.941) 4.72 (.136) 4.52 (.178) FEED DIRECTION (.532) (.504) (1.079) (.941) (14.173) MAX (2.362) MIN. NOTES : 1. COMFORMS TO EIA C O NT RO LL ING D IM EN SIO N: MIL LIM ETER. 3. DIMENSION HUB. 4. INCLUDES FLANGE OUTER EDGE. Notes: Repetitive rating; pulse width limited by max. junction temperature. Starting T J = 25 C, L = TBDmH R G = TBDΩ, I AS = 25.5A. ƒ I SD 25.5A, di/dt TBDA/µs, V DD V (BR)DSS, T J 175 C (1.039) (.961) 3 Pulse width 300µs; duty cycle 2% (1.197) MAX. 4 C oss eff. is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 to 80% V DSS This is only applied to TO-220AB package This is applied to D 2 Pak, when mounted on 1" square PCB ( FR-4 or G-10 Material ). For recommended footprint and soldering techniques refer to application note #AN-994. IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) IR EUROPEAN REGIONAL CENTRE: 439/445 Godstone Rd, Whyteleafe, Surrey CR3 OBL, UK Tel: (0) IR CANADA: 15 Lincoln Court, Brampton, Ontario L6T3Z2, Tel: (905) IR GERMANY: Saalburgstrasse 157, Bad Homburg Tel: (0) IR ITALY: Via Liguria 49, Borgaro, Torino Tel: IR JAPAN: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo 171 Tel: 81 (0) IR SOUTHEAST ASIA: 1 Kim Seng Promenade, Great World City West Tower, 13-11, Singapore Tel: (0) IR TAIWAN:16 Fl. Suite D. 207, Sec. 2, Tun Haw South Road, Taipei, Tel: 886-(0) Data and specifications subject to change without notice. 9/00 6