P-Channel 30-V (D-S) MOSFET
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1 P-Channel 3-V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) I (A) Q g (Typ.) at V GS = - V 6.6 a 2 nc.7 at V GS = V 5 a S FEATURES Halogen-free TrenchFET Power MOSFET % R g Tested APPLICATIONS C/C Converter - Load Switch - Adaptor Switch RoHS COMPLIANT G G S P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T A = 25 C, unless otherwise noted Parameter Symbol Limit Unit rain-source Voltage V S - 3 Gate-Source Voltage V GS ± 2 V T C = 25 C -6.6 a T Continuous rain Current (T J = 5 C) C = 85 C I -4.8 T A = 25 C -5a, b, c T A = 85 C -4.2 b, c A Pulsed rain Current I M -8 Continuous Source-rain iode Current T C = 25 C I S T A = 25 C - 2. b, c T C = 25 C 5.5 Maximum Power issipation T C = 85 C P 3 T A = 25 C 2.3 b, c W T A = 85 C. b, c Operating Junction and Storage Temperature Range T J, T stg - 55 to 5 Soldering Recommendations (Peak Temperature) 26 C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambient t 5 s R thja 5 6 Maximum Junction-to-Foot (rain) Steady State R thjf 6 25 C/W Notes: a. Package limited. b. Surface Mounted on " x " FR4 board. c. t = 5 s.
2 SPECIFICATIONS T J = 25 C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static rain-source Breakdown Voltage V S V GS = V, I = - 25 μa - 3 V V S Temperature Coefficient V S /T J - 3 I = - 25 μa V GS(th) Temperature Coefficient V GS(th) /T J 5 mv/ C Gate-Source Threshold Voltage V GS(th) V S = V GS, I = - 25 μa V Gate-Source Leakage I GSS V S = V, V GS = ± 2 V ± na V S = - 3 V, V GS = V - Zero Gate Voltage rain Current I SS V S = - 3 V, V GS = V, T J = 85 C - 5 μa On-State rain Current a I (on) V S - 5 V, V GS = - V -8 A rain-source On-State Resistance a V R GS = - V, I = - 5A S(on) V GS = V, I =-4A.7.79 Forward Transconductance a g fs V S = - 5 V, I = - 4A 8 S ynamic b Input Capacitance C iss Output Capacitance C oss V S = - 5 V, V GS = V, f = MHz 2 5 pf Reverse Transfer Capacitance C rss 5 Total Gate Charge Q g V S = - 5 V, V GS = - V, I = - 6 A Gate-Source Charge Q gs V S = - 5 V, V GS = V, I = - 6 A.5 nc Gate-rain Charge Q gd.2 Gate Resistance R g f = MHz Turn-On elay Time t d(on) 5 Rise Time t r V = - 5 V, R L = 2.6 Turn-Off elay Time t d(off) I A, V GEN = V, R g = Fall Time t f 8 Turn-On elay Time t d(on) ns Rise Time t r V = - 5 V, R L = Turn-Off elay Time t d(off) I A, V GEN = - V, R g = 7 Fall Time t f rain-source Body iode Characteristics Continuous Source-rain iode Current I S T C = 25 C - Pulse iode Forward Current I SM -8 A Body iode Voltage V S I S = A, V GS = V V Body iode Reverse Recovery Time t rr ns Body iode Reverse Recovery Charge Q rr 5 25 nc I F = A, di/dt = - A/μs, T J = 25 C Reverse Recovery Fall Time t a 3 ns Reverse Recovery Rise Time t b 9 Notes: a. Pulse test; pulse width 3 μs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2
3 TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 7.5 V GS =thru4v 5 T C = - 55 C rain Current (A) I.5 7 I - rain Current (A) 3 2 T C = 25 C 3.5 V GS =3V T C = 25 C V S - rain-to-source Voltage (V) Output Characteristics V GS - Gate-to-Source Voltage (V) Transfer Characteristics 24 - On-Resistance (Ω) R S(on) V GS =4.5V V GS =V C - Capacitance (pf) C iss C oss C rss I - rain Current (A) On Resistance vs. rain Current V S - rain-to-source Voltage (V) Capacitance.6 - Gate-to-Source Voltage (V) I =6 A V S =5V R S(on) - On-Resistance (Normalized).4.2. V GS =V,I =6.A V GS Q g - Total Gate Charge (nc) Gate Charge T J - Junction Temperature ( C) On-Resistance vs. Junction Temperature 3
4 TYPICAL CHARACTERISTICS 25 C, unless otherwise noted.5 I =7.2A - Source Current (A) I S T J = 5 C T J = 25 C - On-Resistance (Ω) R S(on) T J = 25 C T J = 25 C V S - Source-to-rain Voltage (V) Forward iode Voltage vs. Temp V GS -Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage (V) V GS(th) I = 25 μa Power (W) T J - Temperature ( C) Threshold Voltage... Time (s) Single Pulse Power Limited by R S(on) * μs I - rain Current (A). T A =25 C Single Pulse ms ms ms s s C BVSS Limited.. V S - rain-to-source Voltage (V) *V GS > minimum V GS at which R S(on) is specified Safe Operating Area, Junction-to-Ambient 4
5 TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 4 2 I - rain Current (A) Package Limited T C -CaseTemperature ( C) Current erating* Power (W) 3.6 Power (W) T C - Case Temperature ( C) T A - Ambient Temperature ( C) Power, Junction-to-Case Power, Junction-to-Ambient * The power dissipation P is based on T J(max) = 5 C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. 5
6 TYPICAL CHARACTERISTICS 25 C, unless otherwise noted uty Cycle =.5 Normalized Effective Transient Thermal Impedance.2. Notes:. P M.5 t t 2.2 t. uty Cycle, = t 2 2. Per Unit Base = R thja =8 C/W 3. T JM -T A =P M Z (t) thja Single Pulse 4. Surface Mounted Square Wave Pulse uration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient - uty Cycle =.5 Normalized Effective Transient Thermal Impedance Single Pulse Square Wave Pulse uration (s) Normalized Thermal Transient Impedance, Junction-to-Foot 6
7 Package Information Package outline - SOT89 A C H E E L B e B e IM Millimeters Inches IM Millimeters Inches Min Max Min Max Min Max Min Max A E B E B e.5 BSC.59 BSC C e 3. BSC.8 BSC H L Note: Controlling dimensions are in millimeters. Approximate dimensions are provided in inches
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