N-Channel 30 V (D-S) MOSFET

Transcription

1 N-Channel 3 V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) () I (A) b, c Q g (TYP.) 3.2 at V GS = V..24 at V GS = 4.5 V 9.2 PowerPAK SC-7-6L Single S 4 5 S FEATURES TrenchFET power MOSFET Thermally enhanced PowerPAK SC-7 package - Small footprint area % UIS tested Material categorization: For definitions of compliance please see APPLICATIONS Load Switch 2.5 mm Top View 2.5 mm 2 3 G Bottom View Marking Code: A L Ordering Information: -T-GE3 (Lead (Pb)-free and Halogen-free) -T4-GE3 (Lead (Pb)-free and Halogen-free) G N-Channel MOSFET S ABSOLUTE MAXIMUM RATINGS (, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT rain-source Voltage V S 3 V Gate-Source Voltage V GS ± 2 T C = 25 C 2 a T C = 7 C 2 a Continuous rain Current (T J = 5 C) I. b, c T A = 7 C 8. b, c A Pulsed rain Current I M 3 T C = 25 C 2 a Continuous Source-rain iode Current I S 2.9 b, c Single-Pulse Avalanche Current I AS 5.5 L =. mh Single-Pulse Avalanche Energy E AS 2 mj T C = 25 C 9.2 T C = 7 C 2.3 Maximum Power issipation P W 3.5 b, c T A = 7 C 2.2 b, c Operating Junction and Storage Temperature Range T J, T stg -55 to 5 C Soldering Recommendations (Peak Temperature) d, e 26 THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICAL MAXIMUM UNIT Maximum Junction-to-Ambient b, f t 5 s R thja Maximum Junction-to-Case (rain) Steady State R thjc C/W Notes a. Package limited. b. Surface mounted on " x " FR4 board. c. t = 5 s. d. See solder profile ( The PowerPAK SC-7 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: Manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is 8 C/W. S4-79-Rev. C, -Feb-4 ocument Number: ARE SUBJECT TO SPECIFIC ISCLAIMERS, SET FORTH AT

2 SPECIFICATIONS (T J = 25 C, unless otherwise noted) PARAMETER SYMBOL TEST CONITIONS MIN. TYP. MAX. UNIT Static rain-source Breakdown Voltage V S V GS = V, I = 25 μa V V S Temperature Coefficient V S /T J I = 25 μa V GS(th) Temperature Coefficient V GS(th) /T J mv/ C Gate-Source Threshold Voltage V GS(th) V S = V GS, I = 25 μa - 3 V Gate-Source Leakage I GSS V S = V, V GS = ± 2 V - - ± na V S = 3 V, V GS = V - - Zero Gate Voltage rain Current I SS V S = 3 V, V GS = V, T J = 55 C - - μa On-State rain Current a I (on) V S 5 V, V GS = V A V rain-source On-State Resistance a GS = V, I = 6 A R S(on) V GS = 4.5 V, I = 5 A Forward Transconductance a g fs V S = V, I = 6 A S ynamic b Input Capacitance C iss Output Capacitance C oss V S = 5 V, V GS = V, f = MHz pf Reverse Transfer Capacitance C rss V S = 5 V, V GS = V, I = A Total Gate Charge Q g nc Gate-Source Charge Q gs V S = 5 V, V GS = 4.5 V, I = A Gate-rain Charge Q gd Gate Resistance R g f = MHz Turn-On elay Time t d(on) Rise Time t r V = 5 V, R L =.9-7 Turn-Off elay Time t d(off) I 8 A, V GEN = 4.5 V, R g = Fall Time t f - 5 Turn-On elay Time t d(on) ns Rise Time t r V = 5 V, R L = Turn-Off elay Time t d(off) I 8 A, V GEN = V, R g = Fall Time t f rain-source Body iode Characteristics Continuous Source-rain iode Current I S T C = 25 C Pulse iode Forward Current I SM A Body iode Voltage V S I S = 5 A, V GS = V V Body iode Reverse Recovery Time t rr ns Body iode Reverse Recovery Charge Q rr nc I F = 8 A, di/dt = A/μs, T J = 25 C Reverse Recovery Fall Time t a ns Reverse Recovery Rise Time t b Notes a. Pulse test; pulse width 3 μs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S4-79-Rev. C, -Feb-4 2 ocument Number: ARE SUBJECT TO SPECIFIC ISCLAIMERS, SET FORTH AT

3 TYPICAL CHARACTERISTICS (25 C, unless otherwise noted) 3 24 V GS = thru 4 V 5 4 I - rain Current (A) 8 2 V GS =3V I - rain Current (A) 3 2 T C = 25 C 6 T C = 25 C V S - rain-to-source Voltage (V) Output Characteristics T C = - 55 C V GS - Gate-to-Source Voltage (V) Transfer Characteristics.3 C iss - On-Resistance (Ω) R S(on) V GS =4.5V V GS =V C - Capacitance (pf) C oss I - rain Current (A) On-Resistance vs. rain Current and Gate Voltage C rss V S - rain-to-source Voltage (V) Capacitance.7 I =A I =5A - Gate-to-Source Voltage (V) V S =5V V S =7.5V V S =22.5V - On-Resistance (Normalized).5.3. V GS =4.5V,V V GS 2 R S(on) Q g - Total Gate Charge (nc) Gate Charge T J - Junction Temperature ( C) On-Resistance vs. Junction Temperature S4-79-Rev. C, -Feb-4 3 ocument Number: ARE SUBJECT TO SPECIFIC ISCLAIMERS, SET FORTH AT

4 TYPICAL CHARACTERISTICS (25 C, unless otherwise noted).75 I =6A I S - Source Current (A).. T J = 5 C T J = 25 C T J = - 5 C - On-Resistance (Ω) R S(on) T J = 25 C T J = 25 C V S - Source-to-rain Voltage (V) Source-rain iode Forward Voltage V GS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage V GS(th) Variance (V) I =ma Power (W) I = 25 µa T J - Temperature ( C) Threshold Voltage... Time (s) Single Pulse Power (Junction-to-Ambient) Limited by R S(on) * - rain Current (A) I. Single Pulse BVSS Limited.. V S - rain-to-source Voltage (V) *V GS > minimum V GS at which R S(on) is specified Safe Operating Area, Junction-to-Ambient S4-79-Rev. C, -Feb-4 4 ocument Number: ARE SUBJECT TO SPECIFIC ISCLAIMERS, SET FORTH AT µs µs ms ms ms C

5 TYPICAL CHARACTERISTICS (25 C, unless otherwise noted) I - rain Current (A) 4 7 Package Limited Power (W) T C - Case Temperature ( C) Current erating*, Junction-to-Case T J - Temperature ( C) Power erating * The power dissipation P is based on T J (max.) = 5 C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. S4-79-Rev. C, -Feb-4 5 ocument Number: ARE SUBJECT TO SPECIFIC ISCLAIMERS, SET FORTH AT

6 TYPICAL CHARACTERISTICS (25 C, unless otherwise noted) uty Cycle =.5 Normalized Effective Transient Thermal Impedance.2. Notes:..5 P M.2 t 2 t. uty Cycle, = t 2 t 2. Per Unit Base = R thja = 65 C/W 3. T JM -T A =P M Z (t) thja Single Pulse 4. Surface Mounted Square Wave Pulse uration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance uty Cycle = Single Pulse... Square Wave Pulse uration (s) Normalized Thermal Transient Impedance, Junction-to-Case maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see S4-79-Rev. C, -Feb-4 6 ocument Number: ARE SUBJECT TO SPECIFIC ISCLAIMERS, SET FORTH AT

7 Package Information PowerPAK SC7-6L e b e b PIN PIN2 PIN3 PIN PIN2 PIN3 E E2 PIN6 PIN5 PIN4 PIN6 PIN5 PIN4 K3 K K2 K2 K K2 BACKSIE VIEW OF SINGLE A BACKSIE VIEW OF UAL Notes:. All dimensions are in millimeters 2. Package outline exclusive of mold flash and metal burr 3. Package outline inclusive of plating C A E K4 K L L E 2 K K E E3 z Z ETAIL Z SINGLE PA UAL PA IM MILLIMETERS INCHES MILLIMETERS INCHES Min Nom Max Min Nom Max Min Nom Max Min Nom Max A A b C E E E E e.65 BSC.26 BSC.65 BSC.26 BSC K.275 TYP. TYP.275 TYP. TYP K.4 TYP.6 TYP.32 TYP.3 TYP K2.24 TYP.9 TYP.252 TYP. TYP K3.225 TYP.9 TYP K4.355 TYP.4 TYP L T ECN: C-743 Rev. C, 6-Aug-7 WG: 5934 ocument Number: 73 6-Aug-7

8 Application Note 826 RECOMMENE PA LAYOUT FOR PowerPAK SC7-6L Single.3 (.2).65 (.26).35 (.4).275 (.).55 (.22).475 (.9) 2.2 (.87).5 (.59).87 (.34).235 (.9).355 (.4).35 (.4).65 (.26).95 (.37).3 (.2) imensions in mm/(inches) Return to Index APPLICATION NOTE ocument Number: Revision: 2-Jan-8

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