Dual N-Channel 60-V (D-S) MOSFET

Transcription

1 Dual N-Channel -V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) Q g (Typ.).38 at V GS = V 7..3 at V GS =. V.8 9. nc SO-8 FEATURES Halogen-free According to IEC 9-- Definition TrenchFET Power MOSFET 7 C Maximum Junction Temperature % R g Tested Compliant to RoHS directive /9/EC S 8 D G 7 D S 3 D D D G D G G Top View S N-Channel MOSFET S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T A = C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage V DS V Gate-Source Voltage V GS ± T C = C 7. T C = 7 C. Continuous Drain Current (T J = C) I D T A = C.3 a, b T A = 7 C. a, b A Pulsed Drain Current I DM 3 T C = C 7. Continuous Source Drain Diode Current I S T A = C.3 a, b Avalanche Current I AS L = mh Single-Pulse Avalanche Energy E AS 7. mj T C = C 3.7 T C = 7 C. Maximum Power Dissipation P D W T A = C. a, b T A = 7 C.7 a, b Operating Junction and Storage Temperature Range T J, T stg - to 7 C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambient a, c t s R thja. Maximum Junction-to-Foot (Drain) Steady State R thjf 33 C/W Notes: a. Surface Mounted on " x " FR board. b. t = s. c. Rework Conditions: manual soldering with a soldering iron is not recommended for leadless components. d. Maximum under Steady State conditions is C/W.

2 SPECIFICATIONS T J = C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage V DS V GS = V, I D = µa V V DS Temperature Coefficient ΔV DS /T J 3 I D = µa V GS(th) Temperature Coefficient ΔV GS(th) /T J -.7 mv/ C Gate-Source Threshold Voltage V GS(th) V DS = V GS, I D = µa.. 3. V Gate-Source Leakage I GSS V DS = V, V GS = ± V ± na V DS = V, V GS = V Zero Gate Voltage Drain Current I DSS V DS = V, V GS = V, T J = C µa On-State Drain Current a I D(on) V DS V, V GS = V 3 A V GS = V, I D =.3 A Drain-Source On-State Resistance a.38. R DS(on) V GS =. V, I D =.7 A.3.8 Ω Forward Transconductance a g fs V DS = V, I D =.3 A S Dynamic b Input Capacitance C iss 8 Output Capacitance C oss V DS = 3 V, V GS = V, f = MHz 7 pf Reverse Transfer Capacitance C rss V DS = 3 V, V GS = V, I D =.3 A 7 Total Gate Charge Q g 9. nc Gate-Source Charge Q gs V DS = 3 V, V GS = V, I D =.3 A 3.3 Gate-Drain Charge Q gd 3.7 Gate Resistance R g f = MHz Ω Turn-On Delay Time t d(on) 3 Rise Time t r V DD = 3 V, R L =.8 Ω 8 Turn-Off Delay Time t d(off) I D. A, V GEN =. V, R g = Ω 3 Fall Time t f 3 Turn-On Delay Time t d(on) ns Rise Time t r V DD = 3 V, R L =.8 Ω Turn-Off Delay Time t d(off) I D. A, V GEN = V, R g = Ω Fall Time t f Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I S T C = C 7. Pulse Diode Forward Current a I SM 3 A Body Diode Voltage V SD I S = A.8. V Body Diode Reverse Recovery Time t rr ns Body Diode Reverse Recovery Charge Q rr nc I F =. A, di/dt = A/µs, T J = C Reverse Recovery Fall Time t a 8 ns Reverse Recovery Rise Time t b 7 Notes: a. Pulse test; pulse width 3 µs, duty cycle %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

3 TYPICAL CHARACTERISTICS C, unless otherwise noted 3 V GS = V thru V 8 - Drain Current (A) I D V - Drain Current (A) I D T C = C C 3 V V DS - Drain-to-Source Voltage (V) Output Characteristics - C V GS - Gate-to-Source Voltage (V) Transfer Characteristics. R DS(on) - On-Resistance (mω).8... V GS =. V V GS = V C - Capacitance (pf) 8 C iss C oss. 3 I D - Drain Current (A) On-Resistance vs. Drain Current and Gate Voltage C rss 3 V DS - Drain-to-Source Voltage (V) Capacitance - Gate-to-Source Voltage (V) V GS 8 I D =.3 A V DS = 3 V V DS = 8 V R DS(on) - On-Resistance (Normalized) I D =.3 A V GS = V V GS =. V 8 Q g - Total Gate Charge (nc) Gate Charge T J - Junction Temperature ( C) On-Resistance vs. Junction Temperature 3

4 TYPICAL CHARACTERISTICS C, unless otherwise noted 3. - Source Current (A) I S T J = 7 C T J = C R DS(on) - Drain-to-Source On-Resistance (Ω).8... I D =.3 A T J = C T J = C V SD - Source-to-Drain Voltage (V) V GS - Gate-to-Source Voltage (V) Source-Drain Diode Forward Voltage On-Resistance vs. Gate-to-Source Voltage 3..8 V GS(th) (V) I D = µa Power (W) T J - Temperature ( C) Threshold Voltage.. Time (s) Single Pulse Power, Junction-to-Ambient Limited by R DS(on)* I D - Drain Current (A). T A = C Single Pulse... V DS - Drain-to-Source Voltage (V) * V GS > minimum V GS at which R DS(on) is specified Safe Operating Area, Junction-to-Ambient µs ms ms ms s s DC

5 TYPICAL CHARACTERISTICS C, unless otherwise noted I D - Drain Current (A) 3 Power (W) T C - Case Temperature ( C) Current Derating* T C - Case Temperature ( C) Power, Junction-to-Case I C - Peak Avalanche Current (A) T A = L I D BV - V DD.... T A - Time In Avalanche (s) Single Pulse Avalanche Capability * The power dissipation P D is based on T J(max) = 7 C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit.

6 TYPICAL CHARACTERISTICS C, unless otherwise noted Normalized Effective Transient Thermal Impedance.. Duty Cycle =.... Single Pulse 3. T JM - T A = P DM Z (t) thja. Surface Mounted Notes: Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient P DM t t t. Duty Cycle, D = t. Per Unit Base = R thja = 8 C/W Normalized Effective Transient Thermal Impedance. Duty Cycle =.... Single Pulse Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case

7 Package Information SOIC (NARROW): 8-LEAD JEDEC Part Number: MS- 8 7 E H 3 S D A. mm (Gage Plane) h x C All Leads e B A L q. mm." DIM MILLIMETERS INCHES Min Max Min Max A A....8 B.3... C D E e.7 BSC. BSC H h.... L q 8 8 S...8. ECN: C-7-Rev. I, -Sep- DWG: 98

8 Application Note RECOMMENDED MINIMUM PADS FOR SO-8.7 (.39).8 (.7).7 (.9). (.8). (3.8). (.9). (.7) Recommended Minimum Pads Dimensions in Inches/(mm)

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