P-Channel 20 V (D-S) MOSFET

Transcription

1 P-Channel 2 V (-S) MOSFET SiS45NT 3.3 mm mm Top View PowerPAK 22-8S 3.3 mm 3 4 S G Bottom View PROUCT SUMMARY V S (V) -2 R S(on) max. () at V GS = - V.4 R S(on) max. () at V GS = -4.5 V.55 R S(on) max. () at V GS = -2.5 V.95 Q g typ. (nc) 55.5 I (A) -35 a Configuration Single S S FEATURES TrenchFET Gen III P-channel power MOSFET Thin.8 mm maximum height % R g and UIS tested Material categorization: for definitions of compliance please see APPLICATIONS Smart phones, tablet PCs, and mobile computing - Battery switch - Load switch - Power management G S P-Channel MOSFET ORERING INFORMATION Package PowerPAK 22-8S Lead (Pb)-free and halogen-free SiS45NT-T-GE3 ABSOLUTE MAXIMUM RATINGS (T A = 25 C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT rain-source voltage V S -2 V Gate-source voltage V GS ± 2 T C = 25 C -35 a T C = 7 C -35 Continuous drain current (T J = 5 C) I a T A = 25 C b, c T A = 7 C -8.2 b, c A Pulsed drain current (t = 3 μs) I M -8 T Continuous source-drain diode current C = 25 C -35 I a S T A = 25 C -3.3 b, c Avalanche current I AS -2 L =. mh Single pulse avalanche energy E AS 2 mj T C = 25 C 52 T C = 7 C 33 Maximum power dissipation P T A = 25 C 3.7 b, c T A = 7 C 2.4 b, c Operating junction and storage temperature range T J, T stg -55 to +5 C Soldering recommendations (peak temperature) d, e 26 THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICAL MAXIMUM UNIT Maximum junction-to-ambient b, f t s R thja Maximum junction-to-case (drain) Steady state R thjc C/W Notes a. Package limited b. Surface mounted on " x " FR4 board c. t = s d. See solder profile ( The PowerPAK 22-8S is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components f. Maximum under steady state conditions is 8 C/W S7-449-Rev. B, 8-Sep-7 ocument Number: ARE SUBJECT TO SPECIFIC ISCLAIMERS, SET FORTH AT

2 SiS45NT SPECIFICATIONS (T J = 25 C, unless otherwise noted) PARAMETER SYMBOL TEST CONITIONS MIN. TYP. MAX. UNIT Static rain-source breakdown voltage V S V GS = V, I = -25 μa V V S temperature coefficient V S /T J I = -25 μa V GS(th) temperature coefficient V GS(th) /T J mv/ C Gate-source threshold voltage V GS(th) V S = V GS, I = -25 μa V Gate-source leakage I GSS V S = V, V GS = ± 2 V - - ± na V S = -2 V, V GS = V Zero gate voltage drain current I SS V S = -2 V, V GS = V, T J = 55 C μa On-state drain current a I (on) V S -5 V, V GS = - V A rain-source on-state resistance a R S(on) V GS = -4.5 V, I = -5 A V GS = - V, I = -2 A V GS = -2.5 V, I = - A Forward transconductance a g fs V S = - V, I = -2 A S ynamic b Input capacitance C iss Output capacitance C oss V S = - V, V GS = V, f = MHz pf Reverse transfer capacitance C rss V S = - V, V GS = - V, I = - A Total gate charge Q g nc Gate-source charge Q gs V S = - V, V GS = -4.5 V, I = - A Gate-drain charge Q gd Gate resistance R g f = MHz Turn-on delay time t d(on) Rise time t r V = - V, R L = Turn-off delay time t d(off) I - A, V GEN = -4.5 V, R g = Fall time t f Turn-on delay time t d(on) ns Rise time t r V = - V, R L = Turn-off delay time t d(off) I - A, V GEN = - V, R g = Fall time t f rain-source Body iode Characteristics Continuous source-drain diode current I S T C = 25 C Pulse diode forward current I SM A Body diode voltage V S I S = -4 A, V GS = V V Body diode reverse recovery time t rr ns Body diode reverse recovery charge Q rr nc I F = - A, di/dt = A/μs, T J = 25 C Reverse recovery fall time t a - - ns Reverse recovery rise time t b Notes a. Pulse test: pulse width 3 μs, duty cycle 2 % b. Guaranteed by design, not subject to production testing Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S7-449-Rev. B, 8-Sep-7 2 ocument Number: ARE SUBJECT TO SPECIFIC ISCLAIMERS, SET FORTH AT

3 SiS45NT TYPICAL CHARACTERISTICS (25 C, unless otherwise noted) 8 8 V GS = V thru 3 V I - rain Current (A) V GS = 2 V I - rain Current (A) T C = 25 C 6 V GS = V V S - rain-to-source Voltage (V) Output Characteristics 6 T C = 25 C T C = -55 C V GS - Gate-to-Source Voltage (V) Transfer Characteristics C iss R S(on) - On-Resistance (Ω) V GS = 2.5 V V GS = 4.5 V C - Capacitance (pf) C oss V GS = V I - rain Current (A) On-Resistance vs. rain Current and Gate Voltage C rss V S - rain-to-source Voltage (V) Capacitance.6 V GS - Gate-to-Source Voltage (V) I = A V S = 5 V V S = V V S = 5 V R S(on) - On-Resistance (Normalized) I = 2 A V GS = V V GS = 2.5 V Q g - Total Gate Charge (nc) Gate Charge T J - Junction Temperature ( C) On-Resistance vs. Junction Temperature S7-449-Rev. B, 8-Sep-7 3 ocument Number: ARE SUBJECT TO SPECIFIC ISCLAIMERS, SET FORTH AT

4 SiS45NT TYPICAL CHARACTERISTICS (25 C, unless otherwise noted).2 I S - Source Current (A).. T J = 5 C T J = 25 C R S(on) - On-Resistance (Ω) I = 2 A T J = 25 C V S - Source-to-rain Voltage (V) Source-rain iode Forward Voltage. T J = 25 C V GS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage I = 25 μa 8 V GS(th) (V) -.8 I = ma Power (W) T J - Temperature ( C) Threshold Voltage... Time (s) Single Pulse Power, Junction-to-Ambient I M limited I - rain Current (A) I limited () Limited by R S(on). μs ms ms ms s s T A = 25 C C Single pulse BVSS limited... V S - rain-to-source Voltage (V) () V GS > minimum V GS at which R S(on) is specified Safe Operating Area, Junction-to-Ambient S7-449-Rev. B, 8-Sep-7 4 ocument Number: ARE SUBJECT TO SPECIFIC ISCLAIMERS, SET FORTH AT

5 SiS45NT TYPICAL CHARACTERISTICS (25 C, unless otherwise noted) 8 I - rain Current (A) Limited by package T C - Case Temperature ( C) Current erating a Power (W) Power (W) T C - Case Temperature ( C) Power erating, Junction-to-Case T A - Ambient Temperature ( C) Power erating, Junction-to-Ambient Note a. The power dissipation P is based on T J max. = 5 C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. S7-449-Rev. B, 8-Sep-7 5 ocument Number: ARE SUBJECT TO SPECIFIC ISCLAIMERS, SET FORTH AT

6 SiS45NT TYPICAL CHARACTERISTICS (25 C, unless otherwise noted) Normalized Effective Transient Thermal Impedance. uty cycle = Single pulse..... Square Wave Pulse uration (s) Notes: Normalized Thermal Transient Impedance, Junction-to-Ambient P M t t 2 t. uty cycle, = t 2 2. Per unit base = R thja = 8 C/W 3. T JM - T A =P M Z (t) thja 4. Surface mounted uty cycle =.5 Normalized Effective Transient Thermal Impedance Single pulse..... Square Wave Pulse uration (s) Normalized Thermal Transient Impedance, Junction-to-Case maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see S7-449-Rev. B, 8-Sep-7 6 ocument Number: ARE SUBJECT TO SPECIFIC ISCLAIMERS, SET FORTH AT

7 Package Information PowerPAK 22-8T MILLIMETERS INCHES IM. MIN. NOM. MAX. MIN. NOM. MAX. A A b c TYP..85 TYP TYP..9 TYP. E E E E E4.34 TYP..3 TYP. e.65 BSC.26 BSC K.86 TYP..34 TYP. K H L L W M.25 TYP..5 TYP. ECN: T3-56-Rev. A, 8-Feb-3 WG: 62 Revison: 8-Feb-3 ocument Number: ARE SUBJECT TO SPECIFIC ISCLAIMERS, SET FORTH AT

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