N-Channel 100-V (D-S) MOSFET

Transcription

1 N-Channel -V (D-S) MOSFET 3 PRODUCT SUMMARY V (BR)DSS (V) r DS(on) ( ) I D (A). at V GS = V. at V GS = V 7.5 FEATURES TrenchFET Power MOSFETS 75 C Junction Temperature Low Thermal Resistance Package Available RoHS* COMPLIANT D TO-252 G G D S Top View S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T C = 25 C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage V DS Gate-Source Voltage V GS ± 2 V T C = 25 C Continuous Drain Current (T J = 75 C) I D T C = 25 C 23 A Pulsed Drain Current I DM Avalanche Current I AR 5 Repetitive Avalanche Energy a L =. mh E AR 6 mj T C = 25 C Maximum Power Dissipation a 7 b P D T A = 25 C c 3.75 W Operating Junction and Storage Temperature Range T J, T stg - 55 to 75 C THERMAL RESISTANCE RATINGS Parameter Symbol Limit Unit Junction-to-Ambient (PCB Mount) c R thja C/W Junction-to-Case (Drain) R thjc.4 Notes: a. Duty cycle %. b. See SOA curve for voltage derating. c. When Mounted on " square PCB (FR-4 material). * Pb containing terminations are not RoHS compliant, exemptions may apply.

2 3 SPECIFICATIONS T J = 25 C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage V (BR)DSS V SS = V, I D = 25 μa V Gate-Threshold Voltage V GS(th) V DS = V GS, I D = 25 μa 3 Gate-Body Leakage I GSS V DS = V, V GS = ± 2 V ± na Zero Gate Voltage Drain Current I DSS V DS = 8 V, V GS = V, T J = 25 C 5 μa V DS = 8 V, V GS = V V DS = 8 V, V GS = V, T J = 75 C 25 On-State Drain Current a I D(on) V DS 5 V, V GS = V 75 A Notes: a. Pulse test; pulse width 3 μs, duty cycle 2 % b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. V GS = V, I D = 5 A V Drain-Source On-State Resistance a GS = V, I D = A.. r DS(on) V GS = V, I D = 5 A, T J = 25 C. V GS = V, I D = 5 A, T J = 75 C. Forward Transconductance a g fs V DS = 5 V, I D = 5 A S Dynamic b Input Capacitance C iss Total Gate Charge c Q g Turn-On Delay Time c t d(on) Output Capacitance C oss V GS = V, V DS = 25 V, f = MHz 27 pf Reverse Transfer Capacitance C rss Gate-Source Charge c Q gs V DS = 5 V, V GS = V, I D = A nc Gate-Drain Charge c Q gd 9 Gate Resistance R G.7 2 Rise Time c t r V DD = 5 V, R L = Turn-Off Delay Time c t d(off) I D 4 A, V GEN = V, R G = ns Fall Time c t f 2 2 Source-Drain Diode Ratings and Characteristics T C = 25 C b Continuous Current I S Pulsed Current I SM A Forward Voltage a V SD I F = 3 A, V GS = V..5 V Reverse Recovery Time t rr 6 ns Peak Reverse Recovery Current I RM(REC) I F = 3 A, di/dt = A/μs 5 8 A Reverse Recovery Charge Q rr.5.4 μc.. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2

3 3 TYPICAL CHARACTERISTICS 25 C, unless otherwise noted V GS = thru V 6 6 I D - Drain Current (A) 45 3 V I D - Drain Current (A) 45 3 T C = 25 C 5 V V DS - Drain-to-Source Voltage (V) Output Characteristics 5 25 C - 55 C V GS - Gate-to-Source Voltage (V) Transfer Characteristics T C = - 55 C. - Transconductance (S) g fs C 25 C - On-Resistance ( ) r DS(on)... V GS = V V GS = V I D - Drain Current (A) Transconductance I D - Drain Current (A) On-Resistance vs. Drain Current 2 C - Capacitance (pf) C iss - Gate-to-Source Voltage (V) V DS = 5 V I D = A C rss C oss V GS V DS - Drain-to-Source Voltage (V) Capacitance Q g - Total Gate Charge (nc) Gate Charge 3

4 3 TYPICAL CHARACTERISTICS 25 C, unless otherwise noted V GS = V I D = 5 A r DS(on) - On-Resistance (Normalized).5. - Source Current (A) I S T J = 5 C T J = 25 C T J - Junction Temperature ( C) On-Resistance vs. Junction Temperature V SD - Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage 3 (A) I Dav I AV (A) at T A = 5 C I AV (A) at T A = 25 C Drain-Source Breakdown Voltage (V) I D = ma t in (s) Avalanche Current vs. Time T J - Junction Temperature ( C) Drain-Source Breakdown Voltage vs. Junction Temperature 4

5 3 THERMAL RATINGS Limited by r DS(on)* - Drain Current (A) I D - Drain Current (A) I D T C = 25 C Single Pulse μs μs ms ms DC, ms T C - Ambient Temperature ( C) Maximum Avalanche and Drain Current vs. Case Temperature.. V DS - Drain-to-Source Voltage (V) * V GS minimum V GS at which r DS(on) is specified Safe Operating Area 2 Duty Cycle =.5 Normalized Effective Transient Thermal Impedance Single Pulse Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case 5

6 TO-252AA CASE OUTLINE E b3 A C2 MILLIMETERS INCHES DIM. MIN. MAX. MIN. MAX. L3 A A b b D H b C C b e e b2 L4 L5 gage plane height (.5 mm) C A L D D E E H e 2.28 BSC.9 BSC e 4.56 BSC.8 BSC L L D L L E ECN: X2-247-Rev. M, 24-Dec-2 DWG: 5347 Note Dimension L3 is for reference only.

7 RECOMMENDED MINIMUM PADS FOR DPAK (TO-252).224 (5.69).9 (2.286).87 (2.22).42 (.668).243 (6.8).8 (4.572).55 (.397) Recommended Minimum Pads Dimensions in Inches/(mm) APPLICATION NOTE

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