Power MOSFET FEATURES. IRFIB6N60APbF SiHFIB6N60A-E3 IRFIB6N60A SiHFIB6N60A
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1 Power MOSFET IRFIB6N60A, SiHFIB6N60A PRODUCT SUMMARY V DS (V) 600 R DS(on) (Ω) V GS = V 0.75 Q g (Max.) (nc) 49 Q gs (nc) 3 Q gd (nc) 20 Configuration Single TO-220 FULLPAK D G FEATURES Low Gate Charge Q g Results in Simple Drive Requirement Improved Gate, Avalanche and Dynamic dv/dt Ruggedness Fully Characterized Capacitance and Avalanche Voltage and Current Compliant to RoHS directive 2002/95/EC Available RoHS* COMPLIANT APPLICATIONS Switch Mode Power Supply (SMPS) Uninterruptible Power Supply High Speed Power Switching High Voltage Isolation = 2.5 kv RMS (t = 60 s, f = 60 Hz) G D S S N-Channel MOSFET TYPICAL SMPS TOPOLOGIES Single Transistor Forward Active Clamped Forward ORDERING INFORMATION Package Lead (Pb)-free SnPb TO-220 FULLPAK IRFIB6N60APbF SiHFIB6N60A-E3 IRFIB6N60A SiHFIB6N60A ABSOLUTE MAXIMUM RATINGS T C = 25 C, unless otherwise noted PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 600 V Gate-Source Voltage V GS ± 30 Continuous Drain Current V GS at V T C = 25 C 5.5 I D T C = C 3.5 Pulsed Drain Current a I DM 37 Linear Derating Factor 0.48 W/ C Single Pulse Avalanche Energy b E AS 290 mj Repetitive Avalanche Current a I AR 9.2 A Repetitive Avalanche Energy a E AR 6.0 mj Maximum Power Dissipation T C = 25 C P D 60 W Peak Diode Recovery dv/dt c dv/dt 5.0 V/ns Operating Junction and Storage Temperature Range T J, T stg - 55 to 50 Soldering Recommendations (Peak Temperature) for s 300 d C Mounting Torque 6-32 or M3 screw Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. ). b. Starting T J = 25 C, L = 6.8 mh, R G = 25 Ω, I AS = 9.2 A (see fig. 2). c. I SD 9.2 A, di/dt 50 A/µs, V DD V DS, T J 50 C. d..6 mm from case. lbf in. N m * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: S Rev. C, 3-Apr-09
2 THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT Maximum Junction-to-Ambient R thja - 65 C/W Maximum Junction-to-Case (Drain) R thjc - 2. SPECIFICATIONS T J = 25 C, unless otherwise noted PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage V DS V GS = 0 V, I D = 250 µa V V DS Temperature Coefficient ΔV DS /T J Reference to 25 C, I D = ma d mv/ C Gate-Source Threshold Voltage V GS(th) V DS = V GS, I D = 250 µa V Gate-Source Leakage I GSS V GS = ± 30 V - - ± na V DS = 600 V, V GS = 0 V Zero Gate Voltage Drain Current I DSS V DS = 480 V, V GS = 0 V, T J = 25 C µa Drain-Source On-State Resistance R DS(on) V GS = V I D = 3.3 A b Ω Forward Transconductance g fs V DS = 25 V, I D = 5.5 A S Dynamic Input Capacitance C iss V GS = 0 V, Output Capacitance C oss V DS = 25 V, f =.0 MHz, see fig. 5 Reverse Transfer Capacitance C rss pf V DS =.0 V, f =.0 MHz Output Capacitance C oss V GS = 0 V V DS = 480 V, f =.0 MHz Effective Output Capacitance C oss eff. V DS = 0 V to 480 V c Total Gate Charge Q g Gate-Source Charge Q gs I V GS = V D = 9.2 A, V DS = 400 V, see fig. 6 and 3 b nc Gate-Drain Charge Q gd Turn-On Delay Time t d(on) Rise Time t r V DD = 300 V, I D = 9.2 A, R G = 9. Ω, R D = 35.5 Ω, Turn-Off Delay Time t d(off) see fig. b ns Fall Time t f Drain-Source Body Diode Characteristics D Continuous Source-Drain Diode Current I MOSFET symbol S showing the G integral reverse Pulsed Diode Forward Current a I SM S p - n junction diode A Body Diode Voltage V SD T J = 25 C, I S = 9.2 A, V GS = 0 V b V Body Diode Reverse t rr ns Recovery Time T J = 25 C, I F = 9.2 A, di/dt = A/µs b Body Diode Reverse Recovery Charge Q rr µc Forward Turn-On Time t on Intrinsic turn-on time is negligible (turn-on is dominated by L S and L D ) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. ). b. Pulse width 300 µs; duty cycle 2 %. c. C oss eff. is a fixed capacitance that gives the same charging time as C oss while V DS is rising from 0 % to 80 % V DS. d. t = 60 s, f = 60 Hz. Document Number: S Rev. C, 3-Apr-09
3 TYPICAL CHARACTERISTICS 25 C, unless otherwise noted I D, Drain-to-Source Current (A) VGS TOP 5V V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.7V 4.7V I D, Drain-to-Source Current (A) T J = 50 C T J = 25 C 20µs PULSE WIDTH 0. T J = 25 C 0. V DS, Drain-to-Source Voltage (V) Fig. - Typical Output Characteristics V DS= 50V 20µs PULSE WIDTH V GS, Gate-to-Source Voltage (V) Fig. 3 - Typical Transfer Characteristics I D, Drain-to-Source Current (A) VGS TOP 5V V 8.0V 7.0V 6.0V 5.5V 5.0V BOTTOM 4.7V 4.7V 20µs PULSE WIDTH T J = 50 C V DS, Drain-to-Source Voltage (V) Fig. 2 - Typical Output Characteristics R DS(on), Drain-to-Source On Resistance (Normalized) 3.0 I D = 9.2A V GS = V T, Junction Temperature ( J C) Fig. 4 - Normalized On-Resistance vs. Temperature Document Number: S Rev. C, 3-Apr-09 3
4 C, Capacitance (pf) iss oss rss V GS = 0V, f = MHz C iss = C gs C gd, C ds SHORTED C rss = Cgd C oss = C ds Cgd I SD, Reverse Drain Current (A) T J = 50 C T J = 25 C 0 A 0 V DS, Drain-to-Source Voltage (V) Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage V GS = 0 V V SD,Source-to-Drain Voltage (V) Fig. 7 - Typical Source-Drain Diode Forward Voltage V GS, Gate-to-Source Voltage (V) I = D 9.2A V DS = 480V V DS = 300V V DS = 20V FOR TEST CIRCUIT SEE FIGURE Q G, Total Gate Charge (nc) Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage I D, Drain Current (A) 0 OPERATION IN THIS AREA LIMITED BY R DS(on) us us ms ms TC = 25 C TJ = 50 C Single Pulse V DS, Drain-to-Source Voltage (V) Fig. 8 - Maximum Safe Operating Area Document Number: S Rev. C, 3-Apr-09
5 R D 6.0 V GS V DS D.U.T. 5.0 R G - V DD I D, Drain Current (A) V Pulse width µs Duty factor 0. % Fig. a - Switching Time Test Circuit V DS 90 % T C, Case Temperature ( C) % V GS t d(on) t r t d(off) t f Fig. 9 - Maximum Drain Current vs. Case Temperature Fig. b - Switching Time Waveforms Thermal Response (Z thjc ) D = PDM 0. t 0.02 t2 0.0 SINGLE PULSE Notes: (THERMAL RESPONSE). Duty factor D = t / t Peak T J = P DM x Z thjc TC t, Rectangular Pulse Duration (s) Fig. - Maximum Effective Transient Thermal Impedance, Junction-to-Case V DS 5 V t p V DS L Driver R G 20 V t p D.U.T. I AS 0.0 Ω - V DD A A I AS Fig. 2a - Unclamped Inductive Test Circuit Fig. 2b - Unclamped Inductive Waveforms Document Number: S Rev. C, 3-Apr-09 5
6 E AS, Single Pulse Avalanche Energy (mj) TOP BOTTOM I D 4.A 5.8A 9.2A Starting T, Junction Temperature ( J C) Fig. 2c - Maximum Avalanche Energy vs. Drain Current Current regulator Same type as D.U.T. Q G 50 kω V Q GS Q GD 2 V 0.2 µf 0.3 µf D.U.T. V - DS V G V GS 3 ma Charge Fig. 3a - Basic Gate Charge Waveform Fig. 3b - Gate Charge Test Circuit I G I D Current sampling resistors Document Number: S Rev. C, 3-Apr-09
7 Peak Diode Recovery dv/dt Test Circuit D.U.T. - Circuit layout considerations Low stray inductance Ground plane Low leakage inductance current transformer - - R G dv/dt controlled by R G Driver same type as D.U.T. I SD controlled by duty factor "D" D.U.T. - device under test - V DD Driver gate drive P.W. Period D = P.W. Period V GS = V* D.U.T. I SD waveform Reverse recovery current Body diode forward current di/dt D.U.T. V DS waveform Diode recovery dv/dt V DD Re-applied voltage Inductor current Body diode forward drop Ripple 5 % I SD * V GS = 5 V for logic level devices Fig. 4 - For N-Channel maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see Document Number: S Rev. C, 3-Apr-09 7
8 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer s technical experts. Product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 20/65/EU of The European Parliament and of the Council of June 8, 20 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 20/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC definition. We confirm that all the products identified as being compliant to IEC conform to JEDEC JS709A standards. Revision: 02-Oct-2 Document Number: 90
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Power MOSFET PRODUCT SUMMARY (V) 60 R DS(on) ( ) = 5 V 0.20 Q g (Max.) (nc) 8.4 Q gs (nc) 2.6 Q gd (nc) 6.4 Configuration Single D HVMDIP FEATURES Dynamic dv/dt Rating For Automatic Insertion End Stackable
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Power MOSFET PRODUCT SUMMARY (V) 1000 R DS(on) (Ω) V GS = 10 V 3.5 Q g (Max.) (nc) 120 Q gs (nc) 16 Q gd (nc) 65 Configuration Single TO247AC S G D ORDERING INFORMATION Package Lead (Pb)free SnPb G D S
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Power MOSFET PRODUCT SUMMARY V DS (V) 100 R DS(on) (Ω) V GS = 5.0 V 0.077 Q g (Max.) (nc) 64 Q gs (nc) 9.4 Q gd (nc) 27 Configuration Single TO-220 G DS ORDERING INFORMATION Package Lead (Pb)-free SnPb
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Power MOSFET PRODUCT SUMMARY V DS (V) 400 R DS(on) ( ) = 0 V 0.55 Q g (Max.) (nc) 36 Q gs (nc) 9.9 Q gd (nc) 6 Configuration Single D TO220AB G FEATURES Low Gate Charge Q g Results in Simple Drive Requirement
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Power MOSFET PRODUCT SUMMARY (V) 60 R DS(on) ( ) = 10 V 0.20 Q g (Max.) (nc) 11 Q gs (nc) 3.1 Q gd (nc) 5.8 Configuration Single FEATURES Dynamic dv/dt Rating 175 C Operating Temperature Fast Switching
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Power MOSFET PRODUCT SUMMARY (V) 250 R DS(on) (Ω) V GS = 10 V 1.0 Q g (Max.) (nc) 38 Q gs (nc) 8.0 Q gd (nc) 18 Configuration Single TO220 FULLPAK G D S ORDERING INFORMATION Package Lead (Pb)free SnPb
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Power MOSFET PRODUCT SUMMARY (V) 00 R DS(on) ( ) = 0.40 Q g (Max.) (nc) 43 Q gs (nc) 7.0 Q gd (nc) 3 Configuration Single FEATURES Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of
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Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) ( ) V GS = 10 V 1.2 Q g (Max.) (nc) 8.7 Q gs (nc) 2.2 Q gd (nc) 4.1 Configuration HVMDIP S G Single S G D D PChannel MOSFET ORDERING INFORMATION Package Lead
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P-Channel -V (D-S) MOSFET DTE3 PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A).5 at V GS = -.5 V -. -.7 at V GS = -.5 V - 3.6 FEATURES Halogen-free RoHS COMPLIANT TO-6AA (TO-9) S* S G G D 3 Top View D P-Channel
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Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) (Ω) V GS = 5.0 V 0.54 Q g (Max.) (nc) 6.1 Q gs (nc) 2.6 Q gd (nc) 3.3 Configuration Single TO220AB G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G D
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Power MOSFET PRODUCT SUMMARY (V) 200 R DS(on) ( ) = 0.80 Q g (Max.) (nc) 14 Q gs (nc) 3.0 Q gd (nc) 7.9 Configuration Single FEATURES Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease
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Dual N-Channel -V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) Q g (Typ.).38 at V GS = V 7..3 at V GS =. V.8 9. nc SO-8 FEATURES Halogen-free According to IEC 9-- Definition TrenchFET Power
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N-Channel 6 V (D-S) Super Junction Power MOSFET DTP63SJ PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) a.35 at V GS = V 3 6.4 at V GS = 4.5 V FEATURES 75 C Junction Temperature TrenchFET II Power MOSFET
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Power MOSFET IRFB20N50K, SiHFB20N50K PRODUCT SUMMRY V DS (V) 500 R DS(on) (Ω) V GS = 0 V 0.2 Q g (Max.) (nc) 0 Q gs (nc) 33 Q gd (nc) 54 Configuration Single D TO-220 G G DS S FETURES Low Gate Charge Q
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Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) ( ) = 5.0 V 0.54 Q g (Max.) (nc) 6.1 Q gs (nc) 2.6 Q gd (nc) 3.3 Configuration Single D HVMDIP G S G D S NChannel MOSFET ORDERING INFORMATION Package Lead
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Power MOSFET PRODUCT SUMMARY (V) 500 R DS(on) (Ω) = 0.85 Q g (Max.) (nc) 63 Q gs (nc) 9.3 Q gd (nc) 32 Configuration Single FEATURES Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease
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Power MOSFET PRODUCT SUMMARY (V) 400 R DS(on) (Ω) = 0.55 Q g (Max.) (nc) 63 Q gs (nc) 9.0 Q gd (nc) 3 Configuration Single FEATURES Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of
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Power MOSFET PRODUCT SUMMARY (V) 400 R DS(on) (Ω) = 0.55 Q g (Max.) (nc) 63 Q gs (nc) 9.0 Q gd (nc) 3 Configuration Single FEATURES Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of
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S Series Power MOSFET PRODUCT SUMMARY at T J max. (V) 65 R DS(on) max. at 25 C (Ω) = V.9 Q g max. (nc) 98 Q gs (nc) 7 Q gd (nc) 25 Configuration Single D D 2 PAK (TO263) FEATURES Generation one High E
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Power MOSFET PRODUCT SUMMARY (V) 400 R DS(on) (Ω) V GS = 10 V 1.8 Q g (Max.) (nc) 20 Q gs (nc) 3.3 Q gd (nc) 11 Configuration Single D HVMDIP FEATURES Dynamic dv/dt rating Repetitive avalanche rated For
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Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) ( ) = 0.60 Q g (Max.) (nc) 18 Q gs (nc) 3.0 Q gd (nc) 9.0 Configuration Single TO220AB G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G S D PChannel
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Power MOSFET PRODUCT SUMMARY (V) 500 R DS(on) ( ) = 3.0 Q g (Max.) (nc) 4 Q gs (nc) 3.3 Q gd (nc) 13 Configuration Single FEATURES Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of
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Power MOSFET PRODUCT SUMMARY (V) 200 R DS(on) (Ω) V GS = 10 V 0.18 Q g (Max.) (nc) 70 Q gs (nc) 13 Q gd (nc) 39 Configuration Single TO220 FULLPAK G D S ORDERING INFORMATION Package Lead (Pb)free SnPb
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Power MOSFET PRODUCT SUMMARY V DS (V) 500 R DS(on) (Ω) V GS = V 0.26 Q g (Max.) (nc) 20 Q gs (nc) 34 Q gd (nc) 54 Configuration Single D TO220 G G DS S NChannel MOSFET ORDERING INFORMATION Package Lead
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Power MOSFET PRODUCT SUMMARY (V) 800 R DS(on) (Ω) V GS = 10 V 1.2 Q g (Max.) (nc) 200 Q gs (nc) 24 Q gd (nc) 110 Configuration Single TO247 S G D ORDERING INFORMATION Package Lead (Pb)free SnPb G D S NChannel
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N- and P-Channel V (D-S) MOSFET DTS5 PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) N-Channel 99 at V GS = 4.5 V..4 at V GS =.5 V.9 P-Channel - 89 at V GS = - 4.5 V -.5 73 at V GS = -.5 V -.4 FEATURES Halogen-free
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Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) (Ω) V GS = 10 V 0.54 Q g (Max.) (nc) 8.3 Q gs (nc) 2.3 Q gd (nc) 3.8 Configuration Single D SOT223 G D S G D S NChannel MOSFET FEATURES Halogenfree According
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Si9EDH Dual N-Channel V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) SOT-6 SC-7 (6-LEADS).8 at V GS =. V.8.6 at V GS =. V.. at V GS =.8 V. FEATURES Halogen-free According to IEC 69-- Definition
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Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) (Ω) V GS = 5.0 V 0.27 Q g (Max.) (nc) 12 Q gs (nc) 3.0 Q gd (nc) 7.1 Configuration Single TO220AB G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G D
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Power MOSFET PRODUCT SUMMARY (V) 500 R DS(on) (Ω) = 0.85 Q g (Max.) (nc) 63 Q gs (nc) 9.3 Q gd (nc) 32 Configuration Single TO220 G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G D S NChannel MOSFET
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P- and N-Channel 4 V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) a Q g (Typ.) N-Channel 4. 6 at V GS = V 6.7.24 at V GS = 4.5 V 5.8 5. P-Channel -4. 2 at V GS = - V - 6..52 at V GS = - 4.5
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Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) (Ω) = 0.7 Q g (Max.) (nc) 16 Q gs (nc) 4.4 Q gd (nc) 7.7 Configuration Single TO0 G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G D S NChannel MOSFET
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Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) (Ω) = 10 V 1. Q g (Max.) (nc) 8.7 Q gs (nc). Q gd (nc) 4.1 Configuration Single S FEATURES Dynamic dv/dt Rating Repetitive Avalanche Rated PChannel 175 C Operating
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N-Channel 6 V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) Max. I D (A) Q g (Typ.).8 at V GS = 1 V 46.5 6.1 at V GS = 6 V 41.6 9.3 nc.125 at V GS = 4.5 V 37.2 PowerPAK SO-8L 6.15 mm D 5.13 mm FEATURES
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Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) ( ) = 5.0 V 0.54 Q g (Max.) (nc) 6.1 Q gs (nc) 2.6 Q gd (nc) 3.3 Configuration Single D HVMDIP G FEATURES Dynamic dv/dt Rating Repetitive Avalanche Rated For
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Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) (Ω) = 10 V 1. Q g (Max.) (nc) 8.7 Q gs (nc). Q gd (nc) 4.1 Configuration Single S FEATURES Dynamic dv/dt Rating Repetitive Avalanche Rated PChannel 175 C Operating
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Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) (Ω) = 0.54 Q g (Max.) (nc) 8.3 Q gs (nc) 2.3 Q gd (nc) 3.8 Configuration Single FEATURES Dynamic dv/dt Rating Repetitive Avalanche Rated 175 C Operating Temperature
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Power MOSFET PRODUCT SUMMARY (V) 600 R DS(on) () = 10 V 1. Q g max. (nc) 39 Q gs (nc) 10 Q gd (nc) 19 Configuration Single D TO0AB G S G DS NChannel MOSFET ORDERING INFORMATION Package Lead (Pb)free SnPb
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Power MOSFET PRODUCT SUMMARY (V) 400 R DS(on) (Ω) = 0.55 Q g (Max.) (nc) 63 Q gs (nc) 9.0 Q gd (nc) 3 Configuration Single FEATURES Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of
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SUD5P3- P-Channel 3-V (D-S), MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) (A) a. at V GS = - V - 5-3.8 at V GS = -.5 V - 2 FEATURES TrenchFET Power MOSFETs RoHS COMPLIANT S TO-252 G Drain Connected to
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Power MOSFET PRODUCT SUMMARY (V) 200 R DS(on) (Ω) V GS = 10 V 0.40 Q g (Max.) (nc) 43 Q gs (nc) 7.0 Q gd (nc) 23 Configuration Single FEATURES Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching
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Power MOSFET PRODUCT SUMMARY (V) 1000 R DS(on) () V GS = 10 V 11 Q g max. (nc) 38 Q gs (nc) 4.9 Q gd (nc) 22 Configuration Single D TO220AB G S G DS NChannel MOSFET ORDERING INFORMATION Package Lead (Pb)free
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Power MOSFET PRODUCT SUMMARY (V) 450 R DS(on) (Ω) = 0.63 Q g (Max.) (nc) 80 Q gs (nc) 1 Q gd (nc) 41 Configuration Single TO0 D G G D S S NChannel MOSFET ORDERING INFORMATION Package Lead (Pb)free SnPb
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Power MOSFET PRODUCT SUMMARY (V) 00 R DS(on) max. () = 10 V 0.80 Q g max. (nc) 9 Q gs (nc) 5.4 Q gd (nc) 15 Configuration Single S TO0AB G G DS D PChannel MOSFET ORDERING INFORMATION Package Lead (Pb)free
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Power MOSFET PRODUCT SUMMARY (V) 1 R DS(on) (Ω) = 1 V.2 Q g (Max.) (nc) 61 Q gs (nc) 14 Q gd (nc) 29 Configuration Single TO22 G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G S D PChannel MOSFET
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4 PRODUCT SUMMARY at V GS = V 8 nc at V GS = 4.5 V D FEATURES TrenchFET Ⅱ Power MOSFET % R g and UIS Tested Compliant to RoHS Directive 2/65/EU APPLICATIONS OR-ing Server DC/DC G G D S Top View S ABSOLUTE
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