N-Channel 150-V (D-S) MOSFET

Transcription

1 N-Channel 5-V (D-S) MOSFET PRODUCT SUMMARY V (BR)DSS (V) R DS(on) (Ω) I D (A) Q g (Typ.) 5.8 at V GS = V 75 d 64 FEATURES TrenchFET Power MOSFET % R g and UIS Tested APPLICATIONS Primary Side Switch Power Supplies RoHS COMPLIANT TO-263 D G D S Top View Ordering Information: SUM75N5-8P-E3 (Lead (Pb)-free) G S N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage V DS 5 V Gate-Source Voltage V GS ± 2 75 d Continuous Drain Current (T J = 5 C) I D T C = 7 C 7 A Pulsed Drain Current I DM 8 Avalanche Current I AS 5 Single Avalanche Energy a L =. mh E AS 25 mj Maximum Power Dissipation a 32.5 b P D T A = 25 C c 3.2 W Operating Junction and Storage Temperature Range T J, T stg - 55 to 5 C THERMAL RESISTANCE RATINGS Parameter Symbol Limit Unit Junction-to-Ambient (PCB Mount) c R thja 4 Junction-to-Case (Drain) R thjc.4 C/W Notes: a. Duty cycle %. b. See SOA curve for voltage derating. c. When Mounted on " square PCB (FR-4 material). d. Package limited. S Rev. B, 22-Sep-8

2 SPECIFICATIONS T J = 25 C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage V (BR)DSS V DS = V, I D = 25 µa 5 V Gate Threshold Voltage V GS(th) V DS = V GS, I D = 25 µa Gate-Body Leakage I GSS V DS = V, V GS = ± 2 V ± 25 na Zero Gate Voltage Drain Current I DSS V DS = 5 V, V GS = V, T J = 25 C 5 µa V DS = 5 V, V GS = V V DS = 5 V, V GS = V, T J = 5 C 25 On-State Drain Current a I D(on) V DS V, V GS = V 2 A V GS = V, I D = 2 A Drain-Source On-State Resistance a.48.8 R DS(on) V GS = V, I D = 2 A, T J = 25 C Ω Forward Transconductance a g fs V DS = 5 V, I D = 2 A 55 S Dynamic b Total Gate Charge c Q g Input Capacitance C iss 48 Output Capacitance C oss V GS = V, V DS = 75 V, f = MHz 235 pf Reverse Transfer Capacitance C rss Gate-Source Charge c Q gs V DS = 75 V, V GS = V, I D = 85 A 23 nc Gate-Drain Charge c Q gd 6 Gate Resistance R g f = MHz Ω Turn-On Delay Time c t d(on) 5 25 Rise Time c t r V DD = 75 V, R L =.88 Ω 5 Turn-Off Delay Time c t d(off) I D 85 A, V GEN = V, R g = Ω 25 4 ns Fall Time c t f 8 5 Source-Drain Diode Ratings and Characteristics b Continuous Current I S 75 Pulsed Current I SM 8 A Forward Voltage a V SD I F = 3 A, V GS = V..5 V Reverse Recovery Time t rr 3 2 ns Peak Reverse Recovery Current I RM(REC) I F = 5 A, di/dt = A/µs 8 2 A Reverse Recovery Charge Q rr 52 2 nc Notes: a. Pulse test; pulse width 3 µs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2 S Rev. B, 22-Sep-8

3 TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 8 5 V GS =thru 7 V V GS =6V V GS =5V T C = 25 C T C = - 55 C V DS - Drain-to-Source Voltage (V) Output Characteristics V GS - Gate-to-Source Voltage (V) Transfer Characteristics.4 T C = - 55 C - Transconductance (S) g fs T C = 25 C - On-Resistance (Ω) R DS(on).3.2. V GS =V Transconductance On-Resistance vs. Drain Current. 6 I D = 2 A - On-Resistance (Ω) R DS(on) T A = 5 C T A = 25 C C - Capacitance (pf) C iss C oss C rss V GS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage V DS - Drain-to-Source Voltage (V) Capacitance S Rev. B, 22-Sep-8 3

4 TYPICAL CHARACTERISTICS 25 C, unless otherwise noted 2.5 I D = 85 A I D =2A - Gate-to-Source Voltage (V) V GS V DS =75V V DS =2V R DS(on) - On-Resistance (Normalized) V GS =V Q g - Total Gate Charge (nc) Gate Charge T J -Junction Temperature ( C) On-Resistance vs. Junction Temperature.8 9 I D =ma Variance (V) V GS(th) I D =ma I D = 25 µa Drain-Source Breakdown Voltage (V) T J - Temperature ( C) Threshold Voltage T J - Temperature ( C) Drain-Source Breakdown vs. Junction Temperature Limited byr DS(on)* µs T J = 5 C - Source Current (A). T J = 25 C I S - Drain Current (A) µs ms ms ms, DC I D V SD -Source-to-Drain Voltage (V) Source-Drain Diode Forward Voltage. Single Pulse... V DS - Drain-to-Source Voltage (V) * V GS > minimum V GS at which R DS(on) is specified Safe Operating Area, Junction-to-Case 4 S Rev. B, 22-Sep-8

5 TYPICAL CHARACTERISTICS 25 C, unless otherwise noted Package Limited Power (W) T C - Case Temperature ( C) Current Derating*, Junction-to-Case T J - Temperature ( C) Power Derating*, Junction-to-Case Duty Cycle =.5 Normalized Effective Transient Thermal Impedance Single Pulse Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case * The power dissipation P D is based on T J(max) = 5 C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see S Rev. B, 22-Sep-8 5

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