Power MOSFET FEATURES. IRLZ24PbF SiHLZ24-E3 IRLZ24 SiHLZ24 T C = 25 C

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1 Power MOSFET PRODUCT SUMMARY (V) 60 R DS(on) (Ω) V GS = 5.0 V 0.10 Q g (Max.) (nc) 18 Q gs (nc) 4.5 Q gd (nc) 12 Configuration Single TO-220 G D S ORDERING INFORMATION Package Lead (Pb)-free SnPb G D S N-Channel MOSFET FEATURES Dynamic dv/dt Rating Logic-Level Gate Drive R DS(on) Specified at V GS = 4 V and 5 V 175 C Operating Temperature Fast Switching Ease of Paralleling Simple Drive Requirements Lead (Pb)-free Available Available RoHS* COMPLIANT DESCRIPTION Third generation Power MOSFETs from Vishay provides the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost effectiveness. The TO-220 package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220 contribute to its wide acceptance throughout the industry. TO-220 IRLZ24PbF SiHLZ24-E3 IRLZ24 SiHLZ24 ABSOLUTE MAXIMUM RATINGS T C = 25 C, unless otherwise noted PARAMETER SYMBOL LIMIT UNIT Gate-Source Voltage V GS ± 10 V Continuous Drain Current V GS at 5.0 V T C = 25 C 17 I D T C = 100 C 12 A Pulsed Drain Current a I DM 68 Linear Derating Factor 0.40 W/ C Single Pulse Avalanche Energy b E AS 110 mj Maximum Power Dissipation T C = 25 C P D 60 W Peak Diode Recovery dv/dt c dv/dt 4.5 V/ns Operating Junction and Storage Temperature Range T J, T stg - 55 to 175 Soldering Recommendations (Peak Temperature) for 10 s 300 d C Mounting Torque 6-32 or M3 screw Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. V DD = 25 V, starting T J = 25 C, L = 444 µh, R G = 25 Ω I AS = 17 A (see fig. 12). c. I SD 17 A, di/dt 140 A/µs, V DD, T J 175 C. d. 1.6 mm from case. 10 lbf in 1.1 N m * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: S-Pending-Rev. A, 21-Jul-08 WORK-IN-PROGRESS 1

2 THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT Maximum Junction-to-Ambient R thja - 62 Case-to-Sink, Flat, Greased Surface R thcs C/W Maximum Junction-to-Case (Drain) R thjc SPECIFICATIONS T J = 25 C, unless otherwise noted PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage V GS = 0 V, I D = 250 µa V Temperature Coefficient Δ /T J Reference to 25 C, I D = 1 ma V/ C Gate-Source Threshold Voltage V GS(th) = V GS, I D = 250 µa V Gate-Source Leakage I GSS V GS = ± ± 100 na = 60 V, V GS = 0 V Zero Gate Voltage Drain Current I DSS = 48 V, V GS = 0 V, T J = 150 C µa Drain-Source On-State Resistance R DS(on) V GS = 5.0 V I D = 10 A b V GS = 4.0 V I D = 8.5 A b Ω Forward Transconductance g fs = 25 V, I D = 10 A b S Dynamic Input Capacitance C iss V GS = 0 V, Output Capacitance C oss = 25 V, pf Reverse Transfer Capacitance C rss f = 1.0 MHz, see fig Total Gate Charge Q g Gate-Source Charge Q gs I V GS = 5.0 V D = 17 A, = 48 V, see fig. 6 and 13 b nc Gate-Drain Charge Q gd Turn-On Delay Time t d(on) Rise Time t r V DD = 30 V, I D = 17 A, Turn-Off Delay Time t d(off) R G = 9.0 Ω, R D = 1.7 Ω, see fig. 10 b ns Fall Time t f Between lead, D Internal Drain Inductance L D mm (0.25") from package and center of nh G Internal Source Inductance L S die contact S Drain-Source Body Diode Characteristics MOSFET symbol Continuous Source-Drain Diode Current I S showing the D integral reverse G Pulsed Diode Forward Current a I SM p - n junction diode S A Body Diode Voltage V SD T J = 25 C, I S = 17 A, V GS = 0 V b V Body Diode Reverse t rr ns Recovery Time T J = 25 C, I F = 17 A, di/dt = 100 A/µs b Body Diode Reverse Recovery Charge Q rr µc Forward Turn-On Time t on Intrinsic turn-on time is negligible (turn-on is dominated by L S and L D ) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 µs; duty cycle 2 %. Document Number: S-Pending-Rev. A, 21-Jul-08

3 TYPICAL CHARACTERISTICS 25 C, unless otherwise noted Fig. 1 - Typical Output Characteristics, T C = 25 C Fig. 3 - Typical Transfer Characteristics Fig. 2 - Typical Output Characteristics, T C = 175 C Fig. 4 - Normalized On-Resistance vs. Temperature Document Number: S-Pending-Rev. A, 21-Jul-08 3

4 Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 7 - Typical Source-Drain Diode Forward Voltage Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage Fig. 8 - Maximum Safe Operating Area Document Number: S-Pending-Rev. A, 21-Jul-08

5 R D V GS D.U.T. R G - V DD 5.0 V Pulse width 1 µs Duty factor 0.1 % Fig. 10a - Switching Time Test Circuit 90 % 10 % V GS t d(on) t r t d(off) t f Fig. 9 - Maximum Drain Current vs. Case Temperature Fig. 10b - Switching Time Waveforms Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case L Vary t p to obtain required I AS t p V DD R G I AS D.U.T. - V DD 5.0 V t p 0.01 Ω I AS Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms Document Number: S-Pending-Rev. A, 21-Jul-08 5

6 Fig. 12c - Maximum Avalanche Energy vs. Drain Current Current regulator Same type as D.U.T. 5.0 V Q G 12 V 0.2 µf 50 kω 0.3 µf Q GS Q GD D.U.T. V - DS V G V GS 3 ma Charge Fig. 13a - Basic Gate Charge Waveform Fig. 13b - Gate Charge Test Circuit I G I D Current sampling resistors Document Number: S-Pending-Rev. A, 21-Jul-08

7 Peak Diode Recovery dv/dt Test Circuit D.U.T - Circuit layout considerations Low stray inductance Ground plane Low leakage inductance current transformer - - R G dv/dt controlled by R G I SD controlled by duty factor "D" D.U.T. - device under test - V DD Driver gate drive P.W. Period D = P.W. Period V GS = 10 V* D.U.T. I SD waveform Reverse recovery current Body diode forward current di/dt D.U.T. waveform Diode recovery dv/dt V DD Re-applied voltage Inductor current Body diode forward drop Ripple 5 % I SD * V GS = 5 V for logic level devices and 3 V drive devices Fig For N-Channel maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see Document Number: S-Pending-Rev. A, 21-Jul-08 7

8 Legal Disclaimer Notice Vishay Disclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. Document Number: Revision: 18-Jul-08 1

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