Power MOSFET FEATURES. IRF740LCPbF SiHF740LC-E3 IRF740LC SiHF740LC T C = 25 C. V GS at 10 V
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1 Power MOSFET PRODUCT SUMMARY (V) 400 R DS(on) (Ω) = V 0.55 Q g (Max.) (nc) 39 Q gs (nc) Q gd (nc) 19 Configuration Single FEATURES Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30 V Rating Reduced C iss, C oss, C rss Extremely High Frequency Operation Repetitive Avalanche Rated Compliant to RoHS Directive 00/95/EC Available RoHS* COMPLIANT TO-0AB G DS G D S N-Channel MOSFET DESCRIPTION This new series of low charge Power MOSFETs achieve significantly lower gate charge over conventional MOSFETs. Utilizing the new LCDMOS technology, the device improvements are achieved without added product cost, allowing for reduced gate drive requirements and total system savings. In addition, reduced switching losses and improved efficiency are achievable in a variety of high frequency applications. Frequencies of a few MHz at high current are possible using the new Low Charge MOSFETs. These device improvements combined with the proven ruggedness and reliability that are characteristic of Power MOSFETs ofter the designer a new standard in power transistors for switching applications. ORDERING INFORMATION Package Lead (Pb)-free SnPb TO-0AB IRF740LCPbF SiHF740LC-E3 IRF740LC SiHF740LC ABSOLUTE MAXIMUM RATINGS (T C = 5 C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage 400 Gate-Source Voltage ± 30 V Continuous Drain Current at V T C = 5 C I D T C = 0 C 6.3 A Pulsed Drain Current a I DM 3 Linear Derating Factor 1.0 W/ C Single Pulse Avalanche Energy b E AS 50 mj Repetitive Avalanche Current a I AR A Repetitive Avalanche Energy a E AR 13 mj Maximum Power Dissipation T C = 5 C P D 15 W Peak Diode Recovery dv/dt c dv/dt 4.0 V/ns Operating Junction and Storage Temperature Range T J, T stg - 55 to 150 Soldering Recommendations (Peak Temperature) for s 300 d C Mounting Torque 6-3 or M3 screw Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. V DD = 50 V, starting T J = 5 C, L = 9.1 mh, R g = 5 Ω, I AS = A (see fig. 1). c. I SD A, di/dt A/μs, V DD, T J 150 C. d. 1.6 mm from case. lbf in 1.1 N m * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: S Rev. B, 1-Mar-11 1
2 THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT Maximum Junction-to-Ambient R thja - 6 Case-to-Sink, Flat, Greased Surface R thcs C/W Maximum Junction-to-Case (Drain) R thjc SPECIFICATIONS (T J = 5 C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static Drain-Source Breakdown Voltage = 0 V, I D = 50 μa V Temperature Coefficient Δ /T J Reference to 5 C, I D = 1 ma V/ C Gate-Source Threshold Voltage (th) =, I D = 50 μa V Gate-Source Leakage I GSS = ± 0 V - - ± 0 na = 400 V, = 0 V Zero Gate Voltage Drain Current I DSS = 30 V, = 0 V, T J = 15 C μa Drain-Source On-State Resistance R DS(on) = V I D = 6.0 A b Ω Forward Transconductance g fs = 50 V, I D = 6.0 A b S Dynamic Input Capacitance C iss = 0 V, Output Capacitance C oss = 5 V, pf Reverse Transfer Capacitance C rss f = 1.0 MHz, see fig Total Gate Charge Q g Gate-Source Charge Q gs I D = A, = 30 V = V - - nc see fig. 6 and 13 b Gate-Drain Charge Q gd Turn-On Delay Time t d(on) Rise Time t r V DD = 00 V, I D = A, Turn-Off Delay Time t d(off) R g = 9.1 Ω, R D = 0 Ω, see fig. b ns Fall Time t f Between lead, D Internal Drain Inductance L D mm (0.5") from package and center of nh G Internal Source Inductance L S die contact S Drain-Source Body Diode Characteristics MOSFET symbol Continuous Source-Drain Diode Current I S showing the - - D integral reverse G Pulsed Diode Forward Current a I SM p - n junction diode S A Body Diode Voltage V SD T J = 5 C, I S = A, = 0 V b V Body Diode Reverse Recovery Time t rr - T J = 5 C, I F = A, di/dt = 0 A/μs b ns Body Diode Reverse Recovery Charge Q rr μc Forward Turn-On Time t on Intrinsic turn-on time is negligible (turn-on is dominated by L S and L D ) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 μs; duty cycle %. Document Number: 953 S Rev. B, 1-Mar-11
3 TYPICAL CHARACTERISTICS (5 C, unless otherwise noted) Top Bottom 15 V V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V 4.5 V 4.5 V C 5 C 953_ µs Pulse Width T C = 5 C 0 1, Drain-to-Source Voltage (V) 953_ µs Pulse Width = 50 V , Gate-to-Source Voltage (V) Fig. 1 - Typical Output Characteristics, T C = 5 C Fig. 3 - Typical Transfer Characteristics 953_ Top Bottom 15 V V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V 4.5 V µs Pulse Width T C = 150 C 0 1, Drain-to-Source Voltage (V) 4.5 V R DS(on), Drain-to-Source On Resistance (Normalized) 953_ I D = A = V T J, Junction Temperature ( C) Fig. - Typical Output Characteristics, T C = 150 C Fig. 4 - Normalized On-Resistance vs. Temperature Document Number: S Rev. B, 1-Mar-11 3
4 Capacitance (pf) 953_ C iss C oss C rss = 0 V, f = 1 MHz C iss = C gs C gd, C ds Shorted C rss = C gd C oss = C ds C gd, Drain-to-Source Voltage (V) I SD, Reverse Drain Current (A) 953_ C 1 5 C = 0 V V SD, Source-to-Drain Voltage (V) Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage Fig. 7 - Typical Source-Drain Diode Forward Voltage, Gate-to-Source Voltage (V) 953_ I D = 11 A = 80 V = 00 V = 30 V For test circuit see figure Q G, Total Gate Charge (nc) 953_ Operation in this area limited by R DS(on) T C = 5 C T J = 150 C Single Pulse 5 5, Drain-to-Source Voltage (V) µs 0 µs 1 ms ms 3 Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage Fig. 8 - Maximum Safe Operating Area Document Number: S Rev. B, 1-Mar-11
5 R D R G D.U.T. - V DD 953_ T C, Case Temperature ( C) V Pulse width 1 µs Duty factor 0.1 % Fig. a - Switching Time Test Circuit 90 % % t d(on) t r t d(off) t f Fig. 9 - Maximum Drain Current vs. Case Temperature Fig. b - Switching Time Waveforms Thermal Response (Z thjc ) Single Pulse (Thermal Response) P DM t 1 t Notes: 1. Duty Factor, D = t 1 /t. Peak T j = P DM x Z thjc T C 953_11 t 1, Rectangular Pulse Duration (s) Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: S Rev. B, 1-Mar-11 5
6 Vary t p to obtain required I AS R G L D.U.T. I AS - V DD A t p V DD V t p 0.01 Ω I AS Fig. 1a - Unclamped Inductive Test Circuit Fig. 1b - Unclamped Inductive Waveforms E AS, Single Pulse Energy (mj) 953_1c Top Bottom V DD = 50 V Starting T J, Junction Temperature ( C) I D 4.5 A 6.3 A A Fig. 1c - Maximum Avalanche Energy vs. Drain Current Current regulator Same type as D.U.T. V Q G 1 V 0. µf 50 kω 0.3 µf Q GS Q GD D.U.T. V - DS V G Charge Fig. 13a - Basic Gate Charge Waveform 3 ma Fig. 13b - Gate Charge Test Circuit I G I D Current sampling resistors Document Number: S Rev. B, 1-Mar-11
7 Peak Diode Recovery dv/dt Test Circuit D.U.T. - Circuit layout considerations Low stray inductance Ground plane Low leakage inductance current transformer - - R G dv/dt controlled by R G Driver same type as D.U.T. I SD controlled by duty factor "D" D.U.T. - device under test - V DD Driver gate drive P.W. Period D = P.W. Period = V* D.U.T. I SD waveform Reverse recovery current Re-applied voltage Body diode forward current di/dt D.U.T. waveform Diode recovery dv/dt Inductor current Body diode forward drop V DD Ripple 5 % I SD * = 5 V for logic level devices Fig For N-Channel maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see Document Number: S Rev. B, 1-Mar-11 7
8 Package Information TO-0-1 D L H(1) Q L(1) 1 E 3 M * b(1) Ø P A F DIM. MILLIMETERS INCHES MIN. MAX. MIN. MAX. A b b(1) c D E e e(1) F H(1) J(1) L L(1) Ø P Q ECN: X Rev. C, 14-Dec-15 DWG: 6031 Note M* = 0.05 inches to inches (dimension including protrusion), heatsink hole for HVM e b C e(1) J(1) ASE Package Picture Xi an Revison: 14-Dec-15 1 Document Number: 6654 For technical questions, contact: hvm@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT
9 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer s technical experts. Product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. 017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 08-Feb-17 1 Document Number: 900
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Power MOSFET PRODUCT SUMMARY (V) 900 R DS(on) ( ) V GS = 10 V 3.7 Q g (Max.) (nc) 78 Q gs (nc) 10 Q gd (nc) 42 Configuration Single D D 2 PAK (TO263) G G D S ORDERING INFORMATION Package Lead (Pb)free
More informationPower MOSFET FEATURES. IRF520PbF SiHF520-E3 IRF520 SiHF520. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 100 V Gate-Source Voltage V GS ± 20
Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) ( ) = 0.7 Q g (Max.) (nc) 16 Q gs (nc) 4.4 Q gd (nc) 7.7 Configuration Single TO0AB G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G D S NChannel MOSFET
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Power MOSFET PRODUCT SUMMARY (V) 500 R DS(on) (Ω) = 0.85 Q g (Max.) (nc) 63 Q gs (nc) 9.3 Q gd (nc) 32 Configuration Single FEATURES Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease
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Power MOSFET PRODUCT SUMMARY (V) 200 R DS(on) ( ) = 0.80 Q g (Max.) (nc) 14 Q gs (nc) 3.0 Q gd (nc) 7.9 Configuration Single FEATURES Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease
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D Series Power MOSFET SiHP25N4D PRODUCT SUMMARY (V) at T J max. 45 R DS(on) max. at 25 C ( ) V GS = V.7 Q g max. (nc) 88 Q gs (nc) 2 Q gd (nc) 23 Configuration Single TO22AB G DS ORDERING INFORMATION Package
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Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) ( ) = 5.0 V 0.27 Q g (Max.) (nc) 12 Q gs (nc) 3.0 Q gd (nc) 7.1 Configuration Single D HVMDIP FEATURES Dynamic dv/dt Rating Repetitive Avalanche Rated For
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Power MOSFET PRODUCT SUMMARY (V) 60 R DS(on) ( ) = 5 V 0.20 Q g (Max.) (nc) 8.4 Q gs (nc) 2.6 Q gd (nc) 6.4 Configuration Single D HVMDIP FEATURES Dynamic dv/dt Rating For Automatic Insertion End Stackable
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Power MOSFET PRODUCT SUMMARY (V) 400 R DS(on) (Ω) V GS = 10 V 0.55 Q g (Max.) (nc) 66 Q gs (nc) 10 Q gd (nc) 33 Configuration Single TO220 FULLPAK G D S ORDERING INFORMATION Package Lead (Pb)free SnPb
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Power MOSFET PRODUCT SUMMARY V DS (V) 100 R DS(on) (Ω) V GS = 5.0 V 0.077 Q g (Max.) (nc) 64 Q gs (nc) 9.4 Q gd (nc) 27 Configuration Single TO-220 G DS ORDERING INFORMATION Package Lead (Pb)-free SnPb
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Power MOSFET PRODUCT SUMMARY (V) 00 R DS(on) ( ) = 0.40 Q g (Max.) (nc) 43 Q gs (nc) 7.0 Q gd (nc) 3 Configuration Single FEATURES Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of
More informationPower MOSFET. IRFI9634GPbF SiHFI9634G-E3 IRFI9634G SiHFI9634G T C = 25 C. V GS at - 10 V
Power MOSFET PRODUCT SUMMARY (V) 250 R DS(on) (Ω) V GS = 10 V 1.0 Q g (Max.) (nc) 38 Q gs (nc) 8.0 Q gd (nc) 18 Configuration Single TO220 FULLPAK G D S ORDERING INFORMATION Package Lead (Pb)free SnPb
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Power MOSFET PRODUCT SUMMARY (V) 500 R DS(on) (Ω) = 0.85 Q g (Max.) (nc) 63 Q gs (nc) 9.3 Q gd (nc) 32 Configuration Single TO220 G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G D S NChannel MOSFET
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Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) (Ω) = 0.7 Q g (Max.) (nc) 16 Q gs (nc) 4.4 Q gd (nc) 7.7 Configuration Single TO0 G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G D S NChannel MOSFET
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Power MOSFET PRODUCT SUMMARY (V) 200 R DS(on) (Max.) (Ω) = 0.80 Q g (Max.) (nc) 29 Q gs (nc) 5.4 Q gd (nc) 15 Configuration Single TO220AB G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G S D PChannel
More informationPower MOSFET FEATURES. Note * Pb containing terminations are not RoHS compliant, exemptions may apply DESCRIPTION. IRFD113PbF SiHFD113-E3
Power MOSFET PRODUCT SUMMARY V DS (V) 60 R DS(on) (Ω) V GS = 10 V 0.8 Q g (Max.) (nc) 7 Q gs (nc) 2 Q gd (nc) 7 Configuration Single D HVMDIP FEATURES For Automatic Insertion Compact Plastic Package End
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Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) (Ω) = 0.54 Q g (Max.) (nc) 8.3 Q gs (nc) 2.3 Q gd (nc) 3.8 Configuration Single FEATURES Dynamic dv/dt Rating Repetitive Avalanche Rated 175 C Operating Temperature
More informationPower MOSFET FEATURES. IRF740PbF SiHF740-E3 IRF740 SiHF740. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 400 V Gate-Source Voltage V GS ± 20
Power MOSFET PRODUCT SUMMARY (V) 400 R DS(on) (Ω) = 0.55 Q g (Max.) (nc) 63 Q gs (nc) 9.0 Q gd (nc) 3 Configuration Single FEATURES Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of
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Power MOSFET IRF510, SiHF510 PRODUCT SUMMARY (V) 100 R DS(on) () = 0.54 Q g max. (nc) 8.3 Q gs (nc) 2.3 Q gd (nc) 3.8 Configuration Single FEATURES Dynamic dv/dt rating Repetitive avalanche rated 175 C
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Power MOSFET PRODUCT SUMMARY (V) 200 R DS(on) ( ) V GS = 10 V 1.5 Q g (Max.) (nc) 15 Q gs (nc) 3.2 Q gd (nc) 8.4 Configuration Single S HVMDIP G FEATURES Dynamic dv/dt Rating Repetitive Avalanche Rated
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Power MOSFET PRODUCT SUMMARY (V) 60 R DS(on) ( ) V GS = 10 V 0.28 Q g (Max.) (nc) 19 Q gs (nc) 5.4 Q gd (nc) 11 Configuration Single S HVMDIP G S G D D PChannel MOSFET ORDERING INFORMATION Package Lead
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Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) (Ω) V GS = 5.0 V 0.54 Q g (Max.) (nc) 6.1 Q gs (nc) 2.6 Q gd (nc) 3.3 Configuration Single TO220AB G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G D
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Power MOSFET PRODUCT SUMMARY (V) 800 R DS(on) (Ω) V GS = 10 V 1.2 Q g (Max.) (nc) 200 Q gs (nc) 24 Q gd (nc) 110 Configuration Single TO247 S G D ORDERING INFORMATION Package Lead (Pb)free SnPb G D S NChannel
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Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) ( ) = 5.0 V 0.54 Q g (Max.) (nc) 6.1 Q gs (nc) 2.6 Q gd (nc) 3.3 Configuration Single D HVMDIP G S G D S NChannel MOSFET ORDERING INFORMATION Package Lead
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Power MOSFET PRODUCT SUMMARY (V) 450 R DS(on) (Ω) = 0.63 Q g (Max.) (nc) 80 Q gs (nc) 1 Q gd (nc) 41 Configuration Single TO0 D G G D S S NChannel MOSFET ORDERING INFORMATION Package Lead (Pb)free SnPb
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Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) ( ) = 0.60 Q g (Max.) (nc) 18 Q gs (nc) 3.0 Q gd (nc) 9.0 Configuration Single TO220AB G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G S D PChannel
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Power MOSFET PRODUCT SUMMARY V DS (V) 50 R DS(on) ( ) V GS = 10 V 0.10 Q g (Max.) (nc) 24 Q gs (nc) 7.1 Q gd (nc) 7.1 Configuration Single D HVMDIP S G ORDERING INFORMATION Package Lead (Pb)-free SnPb
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Power MOSFET PRODUCT SUMMARY (V) 400 R DS(on) () V GS = 10 V 0.55 Q g max. (nc) 66 Q gs (nc) 10 Q gd (nc) 33 Configuration Single D TO220 FULLPAK G S G D S NChannel MOSFET ORDERING INFORMATION Package
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Power MOSFET PRODUCT SUMMARY (V) 1 R DS(on) (Ω) = 1 V.2 Q g (Max.) (nc) 61 Q gs (nc) 14 Q gd (nc) 29 Configuration Single TO22 G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G S D PChannel MOSFET
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D Series Power MOSFET IRF8B PRODUCT SUMMARY (V) at T J max. 55 R DS(on) max. () at 25 C V GS = V.5 Q g max. (nc) 2 Q gs (nc) Q gd (nc) 5 Configuration Single D TO22AB FEATURES Optimal design Low area specific
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Power MOSFET PRODUCT SUMMARY (V) 200 R DS(on) (Ω) V GS = 10 V 0.40 Q g (Max.) (nc) 43 Q gs (nc) 7.0 Q gd (nc) 23 Configuration Single FEATURES Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching
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Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) (Ω) = 10 V 1. Q g (Max.) (nc) 8.7 Q gs (nc). Q gd (nc) 4.1 Configuration Single S FEATURES Dynamic dv/dt Rating Repetitive Avalanche Rated PChannel 175 C Operating
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Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) (Ω) V GS = 10 V 0.54 Q g (Max.) (nc) 8.3 Q gs (nc) 2.3 Q gd (nc) 3.8 Configuration Single D SOT223 G D S G D S NChannel MOSFET FEATURES Halogenfree According
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Power MOSFET PRODUCT SUMMARY (V) 500 R DS(on) ( ) = 0 V 0.85 Q g (Max.) (nc) 38 Q gs (nc) 9.0 Q gd (nc) 8 Configuration Single D TO220AB G FEATURES Low Gate Charge Q g Results in Simple Drive Requirement
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Power MOSFET PRODUCT SUMMARY (V) 60 R DS(on) () V GS = 10 V 0.28 Q g max. (nc) 19 Q gs (nc) 5.4 Q gd (nc) 11 Configuration Single S HVMDIP G S G D D PChannel MOSFET FEATURES Dynamic dv/dt rating Repetitive
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D Series Power MOSFET PRODUCT SUMMARY (V) at T J max. 55 R DS(on) max. at 25 C ( ) V GS = V.85 Q g (max.) (nc) 3 Q gs (nc) 4 Q gd (nc) 7 Configuration Single TO22AB D G FEATURES Optimal Design Low Area
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P-Channel 4 V (D-S) 75 C MOSFET SUP/SUB65P4-5 PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A).5 at V GS = - V - 65-4.23 at V GS = - 4.5 V - 5 FEATURES TrenchFET Power MOSFET Compliant to RoHS Directive 22/95/EC
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P-Channel 4 V (D-S) 75 C MOSFET SUP/SUB65P4-5 PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A).5 at V GS = - V - 65-4.23 at V GS = - 4.5 V - 5 FEATURES TrenchFET Power MOSFET Compliant to RoHS Directive 22/95/EC
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D Series Power MOSFET SiHP6N4D PRODUCT SUMMARY (V) at T J max. 45 R DS(on) max. at 25 C () V GS = V. Q g max. (nc) 8 Q gs (nc) 3 Q gd (nc) 4 Configuration Single TO22AB D G G DS S NChannel MOSFET ORDERING
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N-Channel -V (D-S) 75 C MOSFET SUD4N-25 PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A).25 at V GS = V 4.28 at V GS = 4.5 V 38 FEATURES TrenchFET Power MOSFET 75 C Maximum Junction Temperature % R g Tested
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Power MOSFET PRODUCT SUMMARY (V) 60 R DS(on) (Ω) V GS = 10 V 0.028 Q g (Max.) (nc) 67 Q gs (nc) 18 Q gd (nc) 25 Configuration Single FEATURES Dynamic dv/dt Rating 175 C Operating Temperature Fast Switching
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Automotive P-Channel 6 V (D-S) 75 C MOSFET PRODUCT SUMMARY V DS (V) -6 R DS(on) (Ω) at V GS = - V.93 R DS(on) (Ω) at V GS = -4.5 V.33 I D (A) - Configuration Single TO-22AB FEATURES TrenchFET power MOSFET
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P-Channel 3 V (D-S) 75 C MOSFET SUB75P3-7, SUP75P3-7 PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) a.7 at V GS = - V ± 75-3. at V GS = - 4.5 V ± 75 FEATURES Compliant to RoHS Directive 22/95/EC Available
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E Series Power MOSFET SiHP33N6E PRODUCT SUMMARY (V) at T J max. 65 R DS(on) max. () at 25 C V GS = V.99 Q g max. (nc) 5 Q gs (nc) 24 Q gd (nc) 42 Configuration Single D TO22AB G G DS S NChannel MOSFET
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S Series Power MOSFET PRODUCT SUMMARY at T J max. (V) 65 R DS(on) max. at 25 C (Ω) = V.9 Q g max. (nc) 98 Q gs (nc) 7 Q gd (nc) 25 Configuration Single D D 2 PAK (TO263) FEATURES Generation one High E
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Power MOSFET, 90 A VSFB90SA0 SOT227 PRIMARY CHARACTERISTICS V DSS 00 V I D DC 90 A R DS(on) 6.5 m Type Modules MOSFET Package SOT227 FEATURES Fully isolated package Very low onresistance Fully avalanche
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N-Channel 3 V (D-S) MOSFET SUD5N3-12P-GE3 PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) a.12 at V GS = 1 V 16.8 3.175 at V GS = 4.5 V 13.9 FEATURES TrenchFET power MOSFET 1 % R g and UIS tested Material
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N-Channel 5-V (D-S) MOSFET PRODUCT SUMMARY V (BR)DSS (V) R DS(on) (Ω) I D (A) Q g (Typ.) 5.8 at V GS = V 75 d 64 FEATURES TrenchFET Power MOSFET % R g and UIS Tested APPLICATIONS Primary Side Switch Power
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Power MOSFET PRODUCT SUMMARY (V) 200 R DS(on) (Ω) V GS = 10 V 0.18 Q g (Max.) (nc) 70 Q gs (nc) 13 Q gd (nc) 39 Configuration Single TO220 FULLPAK G D S ORDERING INFORMATION Package Lead (Pb)free SnPb
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SUD5P3- P-Channel 3-V (D-S), MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) (A) a. at V GS = - V - 5-3.8 at V GS = -.5 V - 2 FEATURES TrenchFET Power MOSFETs RoHS COMPLIANT S TO-252 G Drain Connected to
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EF Series Power MOSFET with Fast Body Diode SiHP2N6EF PRODUCT SUMMARY (V) at T J max. 65 R DS(on) max. at 25 C () V GS = V.76 Q g (Max.) (nc) 84 Q gs (nc) 4 Q gd (nc) 24 Configuration Single D TO22AB G
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N-Channel 6 V (D-S), MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) a Q g (Typ.).3 at V GS = V 9. 6 6.5 nc.45 at V GS = 4.5 V 7.6 FEATURES Halogen-free According to IEC 6249-2-2 Definition TrenchFET
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EF Series Power MOSFET with Fast Body Diode SiHP33N6EF PRODUCT SUMMARY (V) at T J max. 65 R DS(on) max. at 25 C () V GS = V.98 Q g (Max.) (nc) 55 Q gs (nc) 22 Q gd (nc) 43 Configuration Single D TO22AB
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P-Channel -V (D-S) 75 C MOSFET SUD5P-43L PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) a Q g (Typ.).43 at V GS = - V - 37-54 nc.48 at V GS = - 4.5 V - 35 FEATURES TrenchFET Power MOSFET Compliant to RoHS
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IRF961, SiHF961 Power MOSFET PRODUCT SUMMARY (V) 2 R DS(on) (Ω) = 1 V 3. Q g (Max.) (nc) 11 Q gs (nc) 7. Q gd (nc) 4. Configuration Single TO22 G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G S
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N-Channel V (D-S) MOSFET SUDN-5L-GE PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) Q g (Typ). at V GS = V.5.7.5 at V GS = 4.5 V FEATURES TrenchFET Power MOSFETs Material categorization: For definitions
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D Series Power MOSFET TO22 FULLPAK D G S G D S NChannel MOSFET PRODUCT SUMMARY (V) at T J max. 55 R DS(on) max. () at 25 C V GS = V.28 Q g max. (nc) 76 Q gs (nc) Q gd (nc) 7 Configuration Single ORDERING
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Power MOSFET PRODUCT SUMMARY V DS (V) 400 R DS(on) (Ω) V GS = V 0.55 Q g (Max.) (nc) 36 Q gs (nc) 9.9 Q gd (nc) 6 Configuration Single TO220 G D S ORDERING INFORMATION Package Lead (Pb)free SnPb G D S
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