P-Channel 60 V (D-S) MOSFET
|
|
- Annabella Beasley
- 5 years ago
- Views:
Transcription
1 P-Channel 6 V (-S) MOSFET TU4P6 PROUCT SUMMARY V S (V) R S(on) ( ) (A).45 at V GS = - V d.54 at V GS = V - 4 d FEATURES TrenchFET Power MOSFET Material categorization: APPLICATIONS Load Switch TO-252 S G G S Top View P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (T A = 25 C, unless otherwise noted) Parameter Symbol Limit Unit rain-source Voltage V S - 6 Gate-Source Voltage V GS ± 2 V T C = 25 C Continuous rain Current (T J = 75 C) I - 4 d T C = 25 C A Pulsed rain Current M - Avalanche Current I AS - 3 Single Pulse Avalanche Energy a L =. mh E AS 25 mj Power issipation T C = 25 C 3 c P T A = 25 C W 2.5 b, c Operating Junction and Storage Temperature Range T J, T stg - 55 to 5 C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Junction-to-Ambient b t s 5 8 R thja Steady State 4 5 C/W Junction-to-Case R thjc.82. Notes: a. uty cycle %. b. When mounted on " square PCB (FR-4 material). c. See SOA curve for voltage derating. d. Package limited.
2 Total Gate Charge c Q g SPECIFICATIONS (T J = 25 C, unless otherwise noted) Parameter Symbol Test Conditions Min. Typ. Max. Unit Static rain-source Breakdown Voltage V S V GS = V, = - 25 µa - 6 Gate Threshold Voltage V GS(th) V S = V GS, = - 25 µa V Gate-Body Leakage I GSS V S = V, V GS = ± 2 V ± na Zero Gate Voltage rain Current SS V S = - 6 V, V GS = V, T J = 25 C - 5 µa V S = - 6 V, V GS = V - V S = - 6 V, V GS = V, T J = 5 C - On-State rain Current a (on) V S = - 5 V, V GS = - V - 5 A V GS = - V, = - 5 A.45.5 rain-source On-State Resistance a R S(on) V GS = - V, = - A, T J = 25 C.6 V GS = - V, = - A, T J = 5 C.73 V GS = V, = - 5 A.54.6 Forward Transconductance a g fs V S = - 5 V, = - 7 A 6 S ynamic b Input Capacitance C iss 495 Output Capacitance C oss V GS = V, V S = - 25 V, f = MHz 48 pf Reverse Transfer Capacitance C rss Gate-Source Charge c Q gs V S = - 3 V, V GS = - V, = - 4 A 9 nc Gate-rain Charge c Q gd 28 Turn-On elay Time c t d(on) 5 23 Rise Time c t r V = - 3 V, R L =.6 Ω 7 5 Turn-Off elay Time c t d(off) - 4 A, V GEN = - V, R G = ns Fall Time c t f Ω Source-rain iode Ratings and Characteristics T C = 25 C b Continuous Current I S - 4 Pulsed Current I SM - 8 A Forward Voltage a V S I F = - 4 A, V GS = V V Reverse Recovery Time t rr I F = - 4 A, di/dt = A/µs 45 7 ns Notes: a. Pulse test; pulse width 3 µs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. TU4P6 Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. 2
3 TYPICAL CHARACTERISTICS (25 C, unless otherwise noted) TU4P6 8 7 V GS = - thru -4 V rain Current (A) rain Current (A) V 2 T C = 25 C V S - rain-to-source Voltage (V) Output Characteristics 25 C - 55 C V GS - Gate-to-Source Voltage (V) Transfer Characteristics.7 - Transconductance (S) g fs T C = - 55 C 25 C 25 C - On-Resistance (Ω) R S(on) V GS = 4.5 V V GS = V V GS - Gate-to-Source Voltage (V) Transconductance rain Current (A) On-Resistance vs. rain Current C - Capacitance (pf) C oss C iss - Gate-to-Source Voltage (V) V GS V S = 3 V = 4 A C rss V S - rain-to-source Voltage (V) Capacitance Q g - Total Gate Charge (nc) Gate Charge 3
4 TU4P6 TYPICAL CHARACTERISTICS 2. - On-Resistance (Normalized) R S(on) V GS = V = 7 A I S - Source Current (A) T J = 5 C T J = 25 C T J - Junction Temperature ( C) On-Resistance vs. Junction Temperature THERMAL RATINGS (25 C, unless otherwise noted) - rain Current (A) rain Current (A) V S - Source-to-rain Voltage (V) Source-rain iode Forward Voltage Limited by RS(on)* P(t) =. BVSS Limited P(t) = T C - Case Temperature ( C) rain Current vs. Case Temperature T C = 25 C P(t) =. Single Pulse P(t) =. P(t) =. V S - rain-to-source Voltage (V) *V GS > minimum V GS at which R S(on) is specified Safe Operating Area 2 Normalized Effective Transient Thermal Impedance. uty Cycle = Single Pulse Square Wave Pulse uration (s) Normalized Thermal Transient Impedance, Junction-to-Case 4
5 TO-252AA CASE OUTLINE Package Information E b3 A C2 MILLIMETERS INCHES IM. MIN. MAX. MIN. MAX. L3 A A b b H b C C b e e b2 L4 L5 gage plane height (.5 mm) C A L E E H e 2.28 BSC.9 BSC e 4.56 BSC.8 BSC L L L L E ECN: X2-247-Rev. M, 24-ec-2 WG: 5347 Note imension L3 is for reference only.
6 Application Note RECOMMENE MINIMUM PAS FOR PAK (TO-252).224 (5.69).9 (2.286).87 (2.22).42 (.668).243 (6.8).8 (4.572).55 (.397) Recommended Minimum Pads imensions in Inches/(mm) APPLICATION NOTE
7 Legal isclaimer Notice isclaimer ALL PROUCT, PROUCT SPECIFICATIONS AN ATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR ESIGN OR OTHERWISE. in-tek Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, in-tek ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. in-tek makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, in-tek disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on in-tek s knowledge of typical requirements that are often placed on in-tek products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer s technical experts. Product specifications do not expand or otherwise modify in-tek s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, in-tek products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the in-tek product could result in personal injury or death. Customers using or selling in-tek products not expressly indicated for use in such applications do so at their own risk. Please contact authorized in-tek personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of in-tek. Product names and markings noted herein may be trademarks of their respective owners. Material Category Policy in-tek Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under irective 2/65/EU of The European Parliament and of the Council of June 8, 2 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some in-tek documentation may still make reference to RoHS irective 22/95/EC. We confirm that all the products identified as being compliant to irective 22/95/EC conform to irective 2/65/EU. in-tek Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEEC JS79A standards. Please note that some in-tek documentation may still make reference to the IEC definition. We confirm that all the products identified as being compliant to IEC conform to JEEC JS79A standards.
P-Channel 30-V (D-S) MOSFET
P-Channel 3-V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) I (A) Q g (Typ.) - 3.49 at V GS = - V 6.6 a 2 nc.7 at V GS = - 4.5 V 5 a S FEATURES Halogen-free TrenchFET Power MOSFET % R g Tested APPLICATIONS
More informationN-Channel 150-V (D-S) MOSFET
Si4848Y N-Channel -V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) (Ω) I (A).8 at V GS = V 3.7.9 at V GS = 6. V 3. FEATURES Halogen-free According to IEC 649-- efinition TrenchFET Power MOSFETs Compliant
More informationN-Channel 100-V (D-S) MOSFET
N-Channel -V (D-S) MOSFET 3 PRODUCT SUMMARY V (BR)DSS (V) r DS(on) ( ) I D (A). at V GS = V. at V GS = V 7.5 FEATURES TrenchFET Power MOSFETS 75 C Junction Temperature Low Thermal Resistance Package Available
More informationP-Channel 20 V (D-S) MOSFET
SiSS23N P-Channel 2 V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) Max. I (A) Q g (Typ.) - 2 3.3 mm.5 at V GS = -.5 V - 5 e.63 at V GS = - 2.5 V - 5 e.5 at V GS = -.8 V - 5 e 8 PowerPAK 22-8S 7 6 S S
More informationFEATURES. Parameter Symbol Limit Unit Gate-Source Voltage V GS ± 20 V. 85 a Pulsed Drain Current I DM 600
DTU5N6 N-Channel 6 V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) a.25 at V GS = V 5 6.5 at V GS = 4.5 V 75 FEATURES TrenchFET II Power MOSFET TO-252 D G D S Top View S N-Channel MOSFET ABSOLUTE
More informationP-Channel 60-V (D-S) MOSFET
P-Channel -V (-) MOFET TM PROUCT UMMARY V (V) R (on) ( ) I (A) a Q g (Typ.). at V G = - V - - 7. nc.3 at V G = -.5 V - FEATURE TrenchFET Power MOFET % UI Tested APPLICATION Load witch O- G 7 3 G 5 Top
More informationAutomotive N-Channel 60 V (D-S) 175 C MOSFET
Automotive N-Channel 60 V (-S) 75 C MOSFET PROUCT SUMMARY V S (V) 60 R S(on) (Ω) at V GS = 0 V 20 R S(on) (Ω) at V GS = 4.5 V 50 I (A).7 Configuration Single Package SC-70 6 SOT-363 SC-70 Single (6 leads)
More informationAutomotive N-Channel 60 V (D-S) 175 C MOSFET
Automotive N-Channel V (-S) 75 C MOSFET PROUCT SUMMARY V S (V) R S(on) () at V GS = V.42 R S(on) () at V GS = 4.5 V.3 I (A) 7 Configuration Single TSOP- Single S 4 5 Top View Marking Code: 8Axxx 2 3 G
More informationFEATURES. Parameter Symbol Limit Unit Gate-Source Voltage V GS ± 20 V I D T C = 100 C
N-Channel 6 V (D-S) Super Junction Power MOSFET DTK63SJ PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) a.35 at V GS = V 3 6.42 at V GS = 4.5 V FEATURES 75 C Junction Temperature TrenchFET II Power MOSFET
More informationDual N-Channel 60-V (D-S) MOSFET
Dual N-Channel -V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) Q g (Typ.).38 at V GS = V 7..3 at V GS =. V.8 9. nc SO-8 FEATURES Halogen-free According to IEC 9-- Definition TrenchFET Power
More informationN-Channel 100-V (D-S) MOSFET
N-Channel -V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) (Ω) I (A).5 at V GS = V 7.9. at V GS = 6. V 7.5 FEATURES Halogen-free According to IEC 649-- efinition TrenchFET Power MOSFETs 75 C Maximum Junction
More informationFEATURES G D S. Parameter Symbol Limit Unit Gate-Source Voltage V GS ± 20 V I D T C = 100 C
N-Channel 6 V (D-S) Super Junction Power MOSFET DTP63SJ PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) a.35 at V GS = V 3 6.4 at V GS = 4.5 V FEATURES 75 C Junction Temperature TrenchFET II Power MOSFET
More informationP- and N-Channel 4 V (D-S) MOSFET
P- and N-Channel 4 V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) a Q g (Typ.) N-Channel 4. 6 at V GS = V 6.7.24 at V GS = 4.5 V 5.8 5. P-Channel -4. 2 at V GS = - V - 6..52 at V GS = - 4.5
More informationN-Channel 30-V (D-S) MOSFET
N-Channel -V (D-S) MOSFET DTS4 PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) a Q g (Typ.).58 at V GS = V.6.7 at V GS = 4.5 V.6 TO-6 (SOT-). nc FEATURES Halogen-free According to IEC 649-- Definition TrenchFET
More informationP-Channel 20-V (D-S) MOSFET
P-Channel -V (D-S) MOSFET DTE3 PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A).5 at V GS = -.5 V -. -.7 at V GS = -.5 V - 3.6 FEATURES Halogen-free RoHS COMPLIANT TO-6AA (TO-9) S* S G G D 3 Top View D P-Channel
More informationSPECIFICATIONS (T J = 25 C, unless otherwise noted)
N-Channel V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) a, e Q g (Typ.). at V GS = V at V GS = 4.5 V nc DFN 3x3 EP Top View Bottom View Pin Top View FEATURES APPLICATIONS D 3 4 8 7 5 G Pin
More informationFEATURES TrenchFET Ⅱ Power MOSFET 100 % R g and UIS Tested Compliant to RoHS Directive 2011/65/EU PRODUCT SUMMARY APPLICATIONS
4 PRODUCT SUMMARY at V GS = V 8 nc at V GS = 4.5 V D FEATURES TrenchFET Ⅱ Power MOSFET % R g and UIS Tested Compliant to RoHS Directive 2/65/EU APPLICATIONS OR-ing Server DC/DC G G D S Top View S ABSOLUTE
More informationDual P-Channel 30 V (D-S) MOSFET
Dual P-Channel 3 V (D-S) MOSFET PRODUCT SUMMARY V DS (V) - 3 R DS(on) () at V GS = - V.4 R DS(on) () at V GS = - 4.5 V.78 I D (A) per leg -5.4 Configuration Dual FEATURES TrenchFET Power MOSFET AEC-Q Qualified
More informationP-Channel 20 V (D-S) MOSFET
P-Channel 2 V (-S) MOSFET Si545AEU PROUCT SUMMARY V S (V) R S(on) () (Max.) I (A) a Q g (Typ.) - 2.96 at V GS = - 4.5 V - 25.32 at V GS = - 2.5 V - 25.22 at V GS = -.8 V - 7 8 PowerPAK ChipFET Single 7
More informationN-Channel 20-V (D-S) MOSFET
New Product N-Channel 2-V (-S) MOSFET Si3Y PROUCT SUMMARY V S (V) R S(on) (Ω) I (A) a Q g (Typ.).2 at V GS = V 2 3 nc.25 at V GS =.5 V FEATURES Halogen-free According to IEC 29-2-2 TrenchFET Power MOSFET
More informationN-Channel 0 V (D-S) MOSFET
N-Channel V (D-S) MOSFET 66SJ PRODUCT SUMMARY V DS (V) R DS(on) () I D (A) a, e Q g (Typ.).6 at V GS = V 53 4 nc.9 at V GS = 4.5 V 4 FEATURES TrenchFET II Power MOSFET % R g and UIS Tested APPLICATIONS
More informationP-Channel 20 V (D-S) MOSFET
P-Channel 2 V (-S) MOSFET 6 Marking code: BQ TSOP-6 Single S 4 5 Top View PROUCT SUMMARY V S (V) -2 R S(on) max. ( ) at V GS = -4.5 V.24 R S(on) max. ( ) at V GS = -2.5 V.32 R S(on) max. ( ) at V GS =
More informationN-Channel 20 V (D-S) MOSFET
SiH N-Channel V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) (Ω) I (A). at V GS =. V.9.7 at V GS =. V..9 at V GS =.8 V. SOT- SC-7 (-LEAS) FEATURES Halogen-free According to IEC 9-- efinition TrenchFET Power
More informationP-Channel 20 V (D-S) MOSFET
Si7655AN P-Channel 2 V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) Max. I (A) Q g (Typ.).36 at V GS = - V - e - 2.8 at V GS = -.5 V - e 72 nc.9 at V GS = - 2.5 V - e PowerPAK 22-8S FEATURES TrenchFET
More informationN-Channel 40-V (D-S) MOSFET
SUD5N4-8m8P N-Channel 4-V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) a Q g (Typ.) 4 TO-252.88 at V GS = V 5.5 at V GS = 4.5 V 5 6 nc FEATURES Halogen-free According to IEC 6249-2-2 Definition
More informationN-Channel 60-V (D-S) MOSFET
N-Channel 6-V (-S) MOSFET TS7 PROUCT SUMMARY V S (V) R S(on) (Ω) I (ma) 6.5 at V GS = V SOT -5 G FEATURES Halogen-free According to IEC 69-- efinition Low On-Resistance:.5 Ω Low Threshold: V (typ.) Low
More informationN-Channel 100 V (D-S) MOSFET
N-Channel V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) () I D (A) a, e Q g (Typ.).88 at V GS = V 3 nc.95 at V GS =7.5 V DFN 3x3 EP Top View Bottom View Pin Top View FEATURES TrenchFET Power MOSFET
More informationN-Channel 40-V (D-S) MOSFET
N-Channel -V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) (Ω) I (A) d Q g (Typ.).9 at V GS = V 9. at V GS =. V nc FEATURES Halogen-free According to IEC 9-- efinition TrenchFET Power MOSFET % R g Tested
More informationP-Channel 2.5 V (G-S) MOSFET
Si63CY P-Channel 2.5 V (G-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) I (A) d Q g (Typ.).8 at V GS = - V - 8.6-2. at V GS = -.5 V - 6.6 5 nc. at V GS = - 2.5 V - FEATURES Halogen-free According to IEC
More informationN- and P-Channel 20 V (D-S) MOSFET
N- and P-Channel V (D-S) MOSFET DTS5 PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) N-Channel 99 at V GS = 4.5 V..4 at V GS =.5 V.9 P-Channel - 89 at V GS = - 4.5 V -.5 73 at V GS = -.5 V -.4 FEATURES Halogen-free
More informationN-Channel 100-V (D-S) 175 C MOSFET
N-Channel -V (D-S) 75 C MOSFET SUD4N-25 PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A).25 at V GS = V 4.28 at V GS = 4.5 V 38 FEATURES TrenchFET Power MOSFET 75 C Maximum Junction Temperature % R g Tested
More informationP-Channel 40 V (D-S) 175 C MOSFET
P-Channel 4 V (D-S) 75 C MOSFET SUP/SUB65P4-5 PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A).5 at V GS = - V - 65-4.23 at V GS = - 4.5 V - 5 FEATURES TrenchFET Power MOSFET Compliant to RoHS Directive 22/95/EC
More informationAutomotive P-Channel 60 V (D-S) 175 C MOSFET
Automotive P-Channel 6 V (-S) 75 C MOSFET SQ75AENW PROUCT SUMMARY V S (V) -6 R S(on) (Ω) at V GS = - V.65 R S(on) (Ω) at V GS = -.5 V.9 I (A) -6 Configuration Single Package PowerPAK -W PowerPAK -W Single
More informationN-Channel 30 V (D-S) MOSFET
N-Channel 3 V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) () I (A) b, c Q g (TYP.) 3.2 at V GS = V..24 at V GS = 4.5 V 9.2 PowerPAK SC-7-6L Single S 4 5 S 6 5.6 FEATURES TrenchFET power MOSFET Thermally
More informationAutomotive N-Channel 60 V (D-S) 175 C MOSFET
Automotive N-Channel V (-S) 75 C MOSFET SQ7AENW PROUCT SUMMARY V S (V) R S(on) (Ω) at V GS = V.3 R S(on) (Ω) at V GS =.5 V.8 I (A) 8 Configuration Single PowerPAK -8W Single 5 7 8 FEATURES TrenchFET power
More informationN-Channel 30 V (D-S) MOSFET
N-Channel 3 V (-S) MOSFET 3.3 mm mm Top View PROUCT SUMMARY PowerPAK -8S 3.3 mm 3 4 S G Bottom View V S (V) 3 R S(on) max. () at V GS = V.48 R S(on) max. () at V GS = 4.5 V.6 Q g typ. (nc) 4 I (A) 5 a
More informationN-Channel 100 V (D-S) MOSFET
N-Channel V (D-S) MOSFET SUDN-5L-GE PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) Q g (Typ). at V GS = V.5.7.5 at V GS = 4.5 V FEATURES TrenchFET Power MOSFETs Material categorization: For definitions
More informationN-Channel 100 V (D-S) MOSFET
SiAJ N-Channel V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) Max. I (A) a Q g (Typ.).83 at V GS = V.3.3 at V GS =.5 V 9 PowerPAK SC-7-L-Single 5 2.5 mm S S 2 3 G 2.5 mm Bottom View Ordering Information:
More informationP-Channel 30 V (D-S) 175 C MOSFET
P-Channel 3 V (D-S) 75 C MOSFET SUB75P3-7, SUP75P3-7 PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) a.7 at V GS = - V ± 75-3. at V GS = - 4.5 V ± 75 FEATURES Compliant to RoHS Directive 22/95/EC Available
More informationP-Channel 20 V (D-S) MOSFET
P-Channel 2 V (-S) MOSFET SiS45NT 3.3 mm mm Top View PowerPAK 22-8S 3.3 mm 3 4 S G Bottom View PROUCT SUMMARY V S (V) -2 R S(on) max. () at V GS = - V.4 R S(on) max. () at V GS = -4.5 V.55 R S(on) max.
More informationN-Channel 20-V (D-S) MOSFET
New Product N-Channel -V (-S) MOSFET SiBEK PROUCT SUMMARY V S (V) R S(on) (Ω) I (A) a Q g (Typ.). at V GS =.5 V. at V GS =.5 V PowerPAK SC-75-L-Single 5. mm S S G. mm.5 nc Part # code Marking Code A X
More informationN-Channel 60 V (D-S), MOSFET
N-Channel 6 V (D-S), MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) a Q g (Typ.).3 at V GS = V 9. 6 6.5 nc.45 at V GS = 4.5 V 7.6 FEATURES Halogen-free According to IEC 6249-2-2 Definition TrenchFET
More informationAutomotive N-Channel 60 V (D-S) 175 C MOSFET
Automotive N-Channel V (-S) 75 C MOSFET PROUCT SUMMARY V S (V) R S(on) () at V GS = V 2 R S(on) () at V GS = 4.5 V 5 I (A).7 Configuration Single Package SC-7 SOT-33 SC-7 Single ( leads) S 4 5 FEATURES
More informationN-Channel 60 V (D-S) MOSFET
N-Channel 6 V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) Max. I D (A) Q g (Typ.).8 at V GS = 1 V 46.5 6.1 at V GS = 6 V 41.6 9.3 nc.125 at V GS = 4.5 V 37.2 PowerPAK SO-8L 6.15 mm D 5.13 mm FEATURES
More informationP-Channel 40 V (D-S) MOSFET
P-Channel 4 V (-S) MOSFET Si44FY 8 7 6 SO-8 Single 5 FEATURES TrenchFET Gen III p-channel power MOSFET % R g tested Material categorization: for definitions of compliance please see www.vishay.com/doc?9992
More informationDual P-Channel 20-V (D-S) MOSFET
Dual P-Channel 2-V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) a, e Q g (Typ.).58 at V GS = - 4.5 V - 4-2 8.94 at V GS = - 2.5 V - 4 FEATURES Halogen-free Option Available TrenchFET Power
More informationN-Channel 190-V (D-S) MOSFET
New Product N-Channel 9-V (-S) MOSFET SiB452K PROUCT SUMMARY V S (V) R S(on) (Ω) I (A) a Q g (Typ.) 2.4 at V GS = 4.5 V.5 9 2. at V GS = 2.5 V.48 2.3 nc. at V GS =.8 V.4 PowerPAK SC-75-L-Single FEATURES
More informationN-Channel 20-V (D-S) MOSFET
Si546U N-Channel 2-V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) I (A) a Q g (Typ.) 2.5 at V GS = 4.5 V 2.7 at V GS = 2.5 V 2.2 at V GS =. V 2 PowerPAK ChipFET Single 7 6 5 S Bottom View Ordering Information:
More informationDual N-Channel 20-V (D-S) MOSFET
Dual N-Channel -V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) a Q g (Typ.).8 at V GS = 4.5 V 8. at V GS =.5 V 8 nc SO-8 FEATURES Halogen-free According to IEC 49-- Definition TrenchFET Power
More informationP-Channel 40-V (D-S) MOSFET
i44by P-Channel 4-V (-) MOFET PROUCT UMMARY V (V) R (on) (Ω) I (A) Q g (Typ.).4 at V G = - V -. - 4 4. at V G = - 4. V - 8.7 FEATURE Halogen-free According to IEC 649-- efinition TrenchFET Power MOFET
More informationP-Channel 30 V (D-S) MOSFET
SiA483J P-Channel 3 V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) (Max.) I (A) Q g (Typ.) - 3.2at V GS = - V - 2 a 2 nc.3 at V GS = - 4.5 V - 2 a PowerPAK SC-7-6L-Single 6 5 2.5 mm S 4 S 2 3 G 2.5 mm
More informationAutomotive N-Channel 60 V (D-S) 175 C MOSFET
Automotive N-Channel 6 V (-S) 75 C MOSFET PROUCT SUMMARY V S (V) 6 R S(on) () at V GS = V.98 R S(on) () at V GS = 4.5 V.22 I (A) 2 Configuration Single SO-8 FEATURES TrenchFET Power MOSFET AEC-Q Qualified
More informationN-Channel 30 V (D-S) MOSFET
N-Channel 3 V (D-S) MOSFET SUD5N3-12P-GE3 PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) a.12 at V GS = 1 V 16.8 3.175 at V GS = 4.5 V 13.9 FEATURES TrenchFET power MOSFET 1 % R g and UIS tested Material
More informationP-Channel 100-V (D-S) 175 C MOSFET
P-Channel -V (D-S) 75 C MOSFET SUD5P-43L PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) a Q g (Typ.).43 at V GS = - V - 37-54 nc.48 at V GS = - 4.5 V - 35 FEATURES TrenchFET Power MOSFET Compliant to RoHS
More informationN-Channel 40-V (D-S) MOSFET
SUD5N4-8m8P N-Channel 4-V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) a Q g (Typ.) 4 TO-252.88 at V GS = V 5.5 at V GS = 4.5 V 5 6 nc FEATURES Halogen-free According to IEC 6249-2-2 Definition
More informationP-Channel 30 V (D-S) MOSFET
SiA449J P-Channel 3 V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) (Max.) I (A) Q g (Typ.) - 3.24 at V GS = - 4.5 V - 2 a 23. nc.2 at V GS = - V - 2 a.38 at V GS = - 2.5 V - 2 a PowerPAK SC-7-L-Single
More informationComplementary (N- and P-Channel) MOSFET
Complementary (N- and P-Channel) MOSFET Si45BDY PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) a Q g (Typ.) N-Channel 3.7 at V GS = V 2.2 at V GS = 4.5 V 7.9 P-Channel -.27 at V GS = - 4.5 V -.37 at V GS
More informationDual P-Channel 60-V (D-S) 175 MOSFET
Dual P-Channel 6-V (D-S) 75 MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A).2 at V GS = - V - 3. - 6.5 at V GS = - 4.5 V - 2.8 FEATURES Halogen-free According to IEC 6249-2-2 Definition TrenchFET
More informationAutomotive P-Channel 150 V (D-S) 175 C MOSFET
Automotive P-Channel 5 V (-S) 75 C MOSFET SQS8ENW. mm Top View Marking Code: Q6 PowerPAK -8W Single. mm 5 6 7 8 S G Bottom View S S FEATURES TrenchFET power MOSFET AEC-Q qualified d % R g and UIS tested
More informationP-Channel 12-V (D-S) MOSFET
P-Channel 2-V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) Max. I (A) Q g (Typ.) - 2.255 at V GS = -.5 V - 9 a.28 at V GS = - 3.7 V - 9 a.3 at V GS = - 2.5 V - 9 a. at V GS = -.8 V - 9 a.5 at V GS =
More informationN-Channel 30-V (D-S) MOSFET
SiL N-Channel -V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) I (A).48 at V GS = V 4.7 at V GS = 4.5 V.5 FEATURES Halogen-free According to IEC 649-- efinition TrenchFET Power MOSFET Compliant to RoHS
More informationN-Channel 30-V (D-S) MOSFET with Sense Terminal
SUM5N3-3LC N-Channel 3-V (D-S) MOSFET with Sense Terminal PRODUCT SUMMARY V (BR)DSS (V) (Ω) (A).3 at V GS = V 5 a 3.7 at V GS =.5 V 8 a D PAK-5 FEATURES TrenchFET Power MOSFET Plus Current Sensing Diode
More informationN-Channel 30 V (D-S) MOSFET
N-Channel 3 V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) () (MAX.) I (A) a Q g (TYP.) 3.84 at V GS = V 37.8.4 at V GS = 4.5 V 32.5 PowerPAK SC-7-6L Single S 4 5 6 8.2 nc FEATURES TrenchFET Gen IV power
More informationN-Channel 150-V (D-S) MOSFET
N-Channel 5-V (D-S) MOSFET PRODUCT SUMMARY V (BR)DSS (V) R DS(on) (Ω) I D (A) Q g (Typ.) 5.8 at V GS = V 75 d 64 FEATURES TrenchFET Power MOSFET % R g and UIS Tested APPLICATIONS Primary Side Switch Power
More informationDual N-Channel 20 V (D-S) MOSFET
Si9EDH Dual N-Channel V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) SOT-6 SC-7 (6-LEADS).8 at V GS =. V.8.6 at V GS =. V.. at V GS =.8 V. FEATURES Halogen-free According to IEC 69-- Definition
More informationN-Channel 30 V (D-S) MOSFET
Si8EL N-Channel V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) Max. I (A) c Q g (Typ.). at V GS = V.5.44 at V GS = 4.5 V.4.4 nc.85 at V GS =.5 V. FEATURES TrenchFET Power MOSFET % R g Tested Typical
More informationN-Channel 250 V (D-S) MOSFET
N-Channel 25 V (-S) MOSFET 3.3 mm mm Top View PowerPAK 22-8S 3.3 mm 3 4 S G Bottom View PROUCT SUMMARY V S (V) 25 R S(on) max. ( ) at V GS = V.73 R S(on) max. ( ) at V GS = 7.5 V.9 Q g typ. (nc) 8. I (A)
More informationN- and P-Channel 30 V (D-S) MOSFET
N- and P-Channel 3 V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) a Q g (Typ.) N-Channel 3.47 at V GS = V 6..65 at V GS = 4.5 V 5.2 2.75 P-Channel - 3.89 at V GS = - V - 4.3.4 at V GS = -
More informationFEATURES. Parameter Symbol 10 s Steady State Unit Drain-Source Voltage V DS 30 V Gate-Source Voltage V GS ± 25
N-Channel Reduced Q g, Fast witching MOFET i48by PROUCT UMMARY V (V) R (on) (Ω) I (A).8 at V G = V 9 3.3 at V G = 4. V 7 FEATURE Halogen-free According to IEC 649-- Available TrenchFET Power MOFET High-Efficient
More informationP-Channel 30-V (D-S), MOSFET
SUD5P3- P-Channel 3-V (D-S), MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) (A) a. at V GS = - V - 5-3.8 at V GS = -.5 V - 2 FEATURES TrenchFET Power MOSFETs RoHS COMPLIANT S TO-252 G Drain Connected to
More informationDual N-Channel 20-V (D-S) MOSFET
Si99CDY Dual N-Channel -V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) a Q g (Typ.). at V GS =.5 V. at V GS =.5 V nc SO- FEATURES Halogen-free According to IEC 9-- Definition TrenchFET Power
More informationP-Channel 12-V (D-S) MOSFET
i445y P-Channel -V (-) MOFET PROUCT UMMARY V (V) R (on) (Ω) I (A).85 at V G = - 4.5 V - 4 -.5 at V G = -.5 V - 3.3 at V G = -.8 V - FEATURE Halogen-free According to IEC 649-- efinition TrenchFET Power
More informationN- and P-Channel 60-V (D-S), 175 C MOSFET
N- and P-Channel -V (D-S), 75 C MOSFET Si4559EY PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) N-Channel.55 at V GS = V ± 4.5.75 at V GS = 4.5 V ± 3.9 P-Channel -.2 at V GS = - V ± 3..5 at V GS = - 4.5
More informationDual N-Channel 30-V (D-S) MOSFET
Dual N-Channel -V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A).3 at V GS = V 5.9.53 at V GS = 4.5 V 4.9 FEATURES Halogen-free According to IEC 49-- Definition TrenchFET Power MOSFET Compliant
More informationDual P-Channel 20-V (D-S) MOSFET
New Product Dual P-Channel 2-V (D-S) MOSFET Si9933CDY PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) a, e Q g (Typ.).58 at V GS = -.5 V - - 2 8.9 at V GS = - 2.5 V - FEATURES Halogen-free Option Available
More informationP-Channel 40 V (D-S) 175 C MOSFET
P-Channel 4 V (D-S) 75 C MOSFET SUP/SUB65P4-5 PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A).5 at V GS = - V - 65-4.23 at V GS = - 4.5 V - 5 FEATURES TrenchFET Power MOSFET Compliant to RoHS Directive 22/95/EC
More informationN-Channel 20 V (D-S) MOSFET
Si3CDS N-Channel V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) Q g (Typ.).57 at V GS =.5 V.9 3.5.75 at V GS =.5 V.6 FEATURES TrenchFET Power MOSFET Material categorization: For definitions
More informationDual N-Channel 30-V (D-S) MOSFET with Schottky Diode
Si468DY Dual N-Channel 3-V (D-S) MOSFET with Schottky Diode PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) a Q g (Typ.) Channel- 3 Channel-2 3.7 at V GS = V 8..95 at V GS = 4.5 V 7.5. at V GS = V 5.2.5
More informationDual P-Channel 20-V (D-S) MOSFET
New Product Dual P-Channel 2-V (D-S) MOSFET Si93CDY PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) a, e Q g (Typ.) - 2.92 at V GS = - V - 8.33 at V GS = -.5 V - 8 2 SO-8 S 8 D G 2 7 D FEATURES Halogen-free
More informationN-Channel 25 V (D-S) MOSFET
N-Channel 25 V (-S) MOSFET SiRA32P 6.5 mm Top View PROUCT SUMMARY PowerPAK SO-8 Single 8 5.5 mm 4 G Bottom View V S (V) 25 R S(on) max. () at V GS = V.2 R S(on) max. () at V GS = 4.5 V.83 Q g typ. (nc)
More informationP-Channel 8 V (D-S) MOSFET
Si35CDS P-Channel 8 V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) d Q g (Typ.) - 8.35 at V GS = - 4.5 V - 5.8.48 at V GS = -.5 V - 5..65 at V GS = -.8 V - 4.3 TO-36 (SOT-3) nc FEATURES Halogen-free
More informationDual P-Channel 40 V (D-S) MOSFET
Dual P-Channel V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) d Q g (Typ.) -.27 at V GS = - V - 8.3 at V GS = -.5 V - 7.2 2.7 nc SO-8 S 8 D G 2 7 D S 2 3 D 2 G 2 5 D 2 FEATURES Halogen-free
More informationP-Channel 20 V (D-S) MOSFET with Schottky Diode
P-Channel 20 V (D-S) MOSFET with Schottky Diode Si4823DY PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) d Q g (Typ.) - 20 0.08 at V GS = - 4.5 V - 4. 0.75 at V GS = - 2.5 V - 3.3 SCHOTTKY PRODUCT SUMMARY
More informationDual N-Channel 30 V (D-S) MOSFET
Dual N-Channel 3 V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) Q g (Typ.) 3. at V GS = V 2..7 at V GS =.5 V 5. nc SO-8 S 8 D G 2 7 D FEATURES Halogen-free According to IEC 29-2-2 Definition
More informationDual P-Channel 30-V (D-S) MOSFET
Dual P-Channel 3-V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A).25 at V GS = - V - 7. - 3.4 at V GS = - 4.5 V - 5.5 FEATURES Halogen-free According to IEC 6249-2-2 Definition TrenchFET Power
More informationN-Channel 250 V (D-S) 175 C MOSFET
SUP4N25-6 N-Channel 25 V (D-S) 75 C MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) (A) Q g (Typ) 25 TO-22AB.6 at V GS = V 4.64 at V GS = 6 V 38.7 95 FEATURES TrenchFET Power MOSFETS 75 C Junction Temperature
More informationN-Channel 100 V (D-S) MOSFET
Si49DY N-Channel V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) Max. I D (A) a Q g (Typ.). at V GS = V 9.7.5 at V GS = 7.5 V 9.2 27.9 nc.2 at V GS = 6. V 8 SO-8 S 8 D S 2 7 D S 3 6 D G 4 5 D FEATURES
More informationN-Channel 30 V (D-S) MOSFET
N-Channel 3 V (-S) MOSFET SiSH4N 3.3 mm Top View PowerPAK -8SH 3.3 mm.9 mm 5 6 7 8 4 G Bottom View 3 S S S FEATURES TrenchFET power MOSFET % R g and UIS tested Material categorization: for definitions
More informationAutomotive P-Channel 30 V (D-S) 175 C MOSFET
Automotive P-Channel 3 V (-) 75 C MOFET Q443EY PROUCT UMMARY V (V) - 3 R (on) () at V G = - V.3 R (on) () at V G = - 4.5 V.5 I (A) -.8 Configuration ingle FEATURE TrenchFET Power MOFET % R g and UI Tested
More informationN-Channel 25 V (D-S) MOSFET
N-Channel 25 V (-S) MOSFET 2.5 mm Top View Marking code: A5 PowerPAK SC-7-6L Single 2.5 mm S 4 S 7 5 6 2 3 G Bottom View FEATURES TrenchFET Gen IV power MOSFET Optimized Q g, Q gd, and Q gd /Q gs ratio
More informationAutomotive P-Channel 12 V (D-S) 175 C MOSFET
Automotive P-Channel 2 V (-S) 75 C MOSFET SQ453EY PROUCT SUMMARY V S (V) -2 R S(on) (Ω) at V GS = -4.5 V.65 R S(on) (Ω) at V GS = -2.5 V.8 R S(on) (Ω) at V GS = -.8 V.3 I (A) -25 Configuration Single Package
More informationN- and P-Channel 30-V (D-S) MOSFET
N- and P-Channel -V (D-S) MOSFET PRODUCT SUMMARY V DS (V) (Ω) I D (A) N-Channel.3 at V GS = V 5.9.53 at V GS = 4.5 V 4.9 P-Channel -.53 at V GS = - V - 4.9.9 at V GS = - 4.5 V - 3.7 FEATURES Halogen-free
More informationP-Channel 20-V (D-S) MOSFET
SiB33EK P-Channel 2-V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) I (A) Q g (Typ.) - 2.77 at V GS = - 2.5 V - 9 a 7. nc.58 at V GS = -.5 V - 9 a.5 at V GS = -.8 V - 5 PowerPAK SC-75-L-Single 5. mm S
More informationDual N-Channel 30-V (D-S) MOSFET with Schottky Diode
Si483CDY Dual N-Channel 3-V (D-S) MOSFET with Schottky Diode PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) a, e Q g (Typ.) Channel- 3 Channel-2 3.2 at V GS = V 8..25 at V GS = 4.5 V 8..2 at V GS = V 8..25
More informationP-Channel 40 V (D-S), 175 C MOSFET
P-Channel 4 V (D-S), 75 C MOSFET SUD5P4-9L PRODUCT SUMMARY V DS (V) R DS(on) (Ω) (A) d.94 at V GS = - V - 5-4.45 at V GS = - 4.5 V - 5 FEATURES TrenchFET Power MOSFETs 75 C Junction Temperature Compliant
More informationN-Channel 100 V (D-S) MOSFET
Si9DY N-Channel V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) Max. I D (A) a Q g (Typ.). at V GS = V 9.7.5 at V GS = 7.5 V 9.2 27.9 nc.2 at V GS = 6. V 8 SO-8 S 8 D S 2 7 D S 3 6 D G 5 D FEATURES
More informationP-Channel 20 V (D-S) MOSFET
Si469H P-Channel V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) (Ω) I (A) c Q g (Typ.) - SOT-363 SC-7 (6-LEAS).8 at V GS = - V -.7. at V GS = - 4.5 V -.7.55 at V GS = -.5 V -.7 5.5 nc FEATURES Halogen-free
More informationComplementary N- and P-Channel 40-V (D-S) MOSFET
Complementary N- and P-Channel -V (D-S) MOSFET PRODUCT SUMMARY V DS (V) r DS(on) (Ω) I D (A) a Q g (Typ.) N-Channel.7 at V GS = V 8. at V GS =.5 V 8 2 P-Channel -. at V GS = - V - 8.5 at V GS = -.5 V -
More informationAutomotive N-Channel 300 V (D-S) 175 C MOSFET
Automotive N-Channel 300 V (D-S) 175 C MOSFET PRODUCT SUMMARY V DS (V) 300 R DS(on) (Ω) at V GS = V 0.330 I D (A) Configuration Single TO-252 D FEATURES TrenchFET power MOSFET Package with low thermal
More informationDual N-Channel 30 V (D-S) MOSFET
Dual N-Channel 3 V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A). at V GS = V 7.5 3.3 at V GS = 4.5 V 6.5 FEATURES Halogen-free According to IEC 649-- Definition TrenchFET Power MOSFET PWM
More information