Automotive P-Channel 12 V (D-S) 175 C MOSFET

Transcription

1 Automotive P-Channel 2 V (-S) 75 C MOSFET SQ453EY PROUCT SUMMARY V S (V) -2 R S(on) (Ω) at V GS = -4.5 V.65 R S(on) (Ω) at V GS = -2.5 V.8 R S(on) (Ω) at V GS = -.8 V.3 I (A) -25 Configuration Single Package SO-8 FEATURES TrenchFET power MOSFET AEC-Q qualified % R g and UIS tested Material categorization: for definitions of compliance please see SO-8 Single 5 G S S Top View 2 S 3 S 4 G P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (T C = 25 C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT rain-source Voltage V S -2 Gate-Source Voltage V GS ± 8 V T Continuous rain Current a C = 25 C -25 I T C = 25 C -4 Continuous Source Current (iode Conduction) a I S -6.5 A Pulsed rain Current b I M - Single Pulse Avalanche Current I AS -9 L =. mh Single Pulse Avalanche Energy E AS 8 mj T Maximum Power issipation b C = 25 C 7. P T C = 25 C 2.3 W Operating Junction and Storage Temperature Range T J, T stg -55 to +75 C THERMAL RESISTANCE RATINGS PARAMETER SYMBOL LIMIT UNIT Junction-to-Ambient PCB Mount c R thja 85 Junction-to-Foot (rain) R thjf 2 C/W Notes a. Package limited. b. Pulse test; pulse width 3 μs, duty cycle 2 %. c. When mounted on " square PCB (FR4 material). S5-22, Rev. A, 4-Sep-5 ocument Number: ARE SUBJECT TO SPECIFIC ISCLAIMERS, SET FORTH AT

2 SQ453EY SPECIFICATIONS (T C = 25 C, unless otherwise noted) PARAMETER SYMBOL TEST CONITIONS MIN. TYP. MAX. UNIT Static rain-source Breakdown Voltage V S V GS =, I = -25 μa V Gate-Source Threshold Voltage V GS(th) V S = V GS, I = -25 μa Gate-Source Leakage I GSS V S = V, V GS = ± 2 V - - ± na Zero Gate Voltage rain Current I SS V GS = V V S = -2 V, T J = 25 C μa V GS = V V S = -2 V V GS = V V S = -2 V, T J = 75 C On-State rain Current a I (on) V GS = -4.5 V V S -5 V A Notes a. Pulse test; pulse width 3 μs, duty cycle 2 %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. V GS = -4.5 V I = -4 A V GS = -4.5 V I = -4 A, T J = 25 C rain-source On-State Resistance a R S(on) V GS = -4.5 V I = -4 A, T J = 75 C - -. Ω V GS = -2.5 V I = -3 A V GS = -.8 V I = -2 A Forward Transconductance a g fs V S = -6 V, I = -.5 A S ynamic b Input Capacitance C iss - 75 Output Capacitance C oss V GS = V V S = -6 V, f = MHz pf Reverse Transfer Capacitance C rss Total Gate Charge c Q g - 5 Gate-Source Charge c Q gs V GS = -4.5 V V S = -6 V, I = -.5 A nc Gate-rain Charge c Q gd Gate Resistance R g f = MHz Ω Turn-On elay Time c t d(on) Rise Time c t r V = -6 V, R L = 5 Ω Turn-Off elay Time c t d(off) I -.5 A, V GEN = -4.5 V, R g = 6 Ω ns Fall Time c t f Source-rain iode Ratings and Characteristics b Pulsed Current a I SM A Forward Voltage V S I F = -.5 A, V GS = V Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S5-22, Rev. A, 4-Sep-5 2 ocument Number: ARE SUBJECT TO SPECIFIC ISCLAIMERS, SET FORTH AT

3 SQ453EY TYPICAL CHARACTERISTICS (T A = 25 C, unless otherwise noted) 5 5 V GS = 5 V thru 2 V 4 4 I - rain Current (A) 3 2 V GS =.5 V I - rain Current (A) 3 2 T C = 25 C T C = 25 C V GS = V T C = - 55 C V S -rain-to-source Voltage (V) V GS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics I - rain Current (A) T C = 25 C T C = 25 C g fs -Transconductance (S) T C = 25 C T C = - 55 C T C = 25 C T C = - 55 C V GS - Gate-to-Source Voltage (V) I - rain Current (A) Transfer Characteristics Transconductance R S(on) -On-Resistance (Ω).5..5 V GS =.8 V V GS = 2.5 V V GS = 4.5 V C - Capacitance (pf) C iss C oss C rss I - rain Current (A) On-Resistance vs. rain Current V S -rain-to-source Voltage (V) Capacitance S5-22, Rev. A, 4-Sep-5 3 ocument Number: ARE SUBJECT TO SPECIFIC ISCLAIMERS, SET FORTH AT

4 SQ453EY TYPICAL CHARACTERISTICS (T A = 25 C, unless otherwise noted) V GS - Gate-to-Source Voltage (V) I =.5 A V S = 6 V R S(on) -On-Resistance (Normalized) I = 4 A V GS = 4.5 V V GS = 2.5 V Q g - Total Gate Charge (nc) Gate Charge T J - Junction Temperature ( C) On-Resistance vs. Junction Temperature.5 T J = 5 C.4 I S - Source Current (A).. T J = 25 C R S(on) -On-Resistance (Ω).3.2. T J = 5 C T J = 25 C V S - Source-to-rain Voltage (V) Source rain iode Forward Voltage V GS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage. - 5 I = ma V GS(th) Variance (V) I = 6 μa I = 2 ma V S -rain-to-source Voltage (V) T J - Temperature ( C) Threshold Voltage T J - Junction Temperature ( C) Breakdown Voltage vs. Junction Temperature S5-22, Rev. A, 4-Sep-5 4 ocument Number: ARE SUBJECT TO SPECIFIC ISCLAIMERS, SET FORTH AT

5 SQ453EY THERMAL RATINGS (T A = 25 C, unless otherwise noted) I M Limited I - rain Current (A) Limited by R S(on) * ms ms ms s, s, C. T C = 25 C Single Pulse BVSS Limited... V S -rain-to-source Voltage (V) * V GS > minimum V GS at which R S(on) is specified Safe Operating Area uty Cycle =.5 Normalized Effective Transient Thermal Impedance t t 2 t. uty Cycle, = t 2 2. Per Unit Base =R thja = 84 C/W Single Pulse 3. T JM -T A =P M Z (t) thja 4. Surface Mounted Square Wave Pulse uration (s) Notes: P M Normalized Thermal Transient Impedance, Junction-to-Ambient S5-22, Rev. A, 4-Sep-5 5 ocument Number: ARE SUBJECT TO SPECIFIC ISCLAIMERS, SET FORTH AT

6 SQ453EY THERMAL RATINGS (T A = 25 C, unless otherwise noted) uty Cycle =.5 Normalized Effective Transient Thermal Impedance Single Pulse Square Wave Pulse uration (s) Normalized Thermal Transient Impedance, Junction-to-Foot Note The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (25 C) - Normalized Transient Thermal Impedance Junction-to-Foot (25 C) are given for general guidelines only to enable the user to get a ball park indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size " x " x.62", double sided with 2 oz. copper, % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions. maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see S5-22, Rev. A, 4-Sep-5 6 ocument Number: ARE SUBJECT TO SPECIFIC ISCLAIMERS, SET FORTH AT

7 Ordering Information SO-8 Ordering codes for the SQ rugged series power MOSFETs in the SO-8 package: ATASHEET PART NUMBER OL ORERING COE a NEW ORERING COE SQ482EY SQ482EY-T-GE3 SQ482EY-T_GE3 SQ484EY SQ484EY-T-GE3 SQ484EY-T_GE3 SQ4282EY SQ4282EY-T-GE3 SQ4282EY-T_GE3 SQ4284EY SQ4284EY-T-GE3 SQ4284EY-T_GE3 SQ44EY SQ44EY-T-GE3 SQ44EY-T_GE3 SQ44EY SQ44EY-T-GE3 SQ44EY-T_GE3 SQ4425EY SQ4425EY-T-GE3 SQ4425EY-T_GE3 SQ443EY SQ443EY-T-GE3 SQ443EY-T_GE3 SQ4435EY SQ4435EY-T-GE3 SQ4435EY-T_GE3 SQ447EY SQ447EY-T-GE3 SQ447EY-T_GE3 SQ4483BEEY SQ4483BEEY-T-GE3 SQ4483BEEY-T_GE3 SQ4483EY - SQ4483EY-T_GE3 SQ4532AEY - SQ4532AEY-T_GE3 SQ484EY SQ484EY-T-GE3 SQ484EY-T_GE3 SQ485EY SQ485EY-T-GE3 SQ485EY-T_GE3 SQ497EY SQ497EY-T-GE3 SQ497EY-T_GE3 SQ492EY SQ492EY-T-GE3 SQ492EY-T_GE3 SQ4937EY SQ4937EY-T-GE3 SQ4937EY-T_GE3 SQ494AEY SQ494AEY-T-GE3 SQ494AEY-T_GE3 SQ4946AEY SQ4946AEY-T-GE3 SQ4946AEY-T_GE3 SQ4949EY SQ4949EY-T-GE3 SQ4949EY-T_GE3 SQ496EY SQ496EY-T-GE3 SQ496EY-T_GE3 SQ947EY SQ947EY-T-GE3 SQ947EY-T_GE3 SQ9945BEY SQ9945BEY-T-GE3 SQ9945BEY-T_GE3 Note a. Old ordering code is obsolete and no longer valid for new orders Revision: 25-Aug-5 ocument Number: ARE SUBJECT TO SPECIFIC ISCLAIMERS, SET FORTH AT

8 Package Information SOIC (NARROW): 8-LEA JEEC Part Number: MS E H S A.25 mm (Gage Plane) h x 45 C All Leads e B A L q. mm.4" MILLIMETERS INCHES IM Min Max Min Max A A B C E e.27 BSC.5 BSC H h L q 8 8 S ECN: C-6527-Rev. I, -Sep-6 WG: 5498 ocument Number: 792 -Sep-6

9 VISHAY SILICONIX TrenchFET Power MOSFETs Application Note 88 Mounting LITTLE FOOT, SO-8 Power MOSFETs Wharton Mcaniel Surface-mounted LITTLE FOOT power MOSFETs use integrated circuit and small-signal packages which have been been modified to provide the heat transfer capabilities required by power devices. Leadframe materials and design, molding compounds, and die attach materials have been changed, while the footprint of the packages remains the same. See Application Note 826, Recommended Minimum Pad Patterns With Outline rawing Access for MOSFETs, ( for the basis of the pad design for a LITTLE FOOT SO-8 power MOSFET. In converting this recommended minimum pad to the pad set for a power MOSFET, designers must make two connections: an electrical connection and a thermal connection, to draw heat away from the package. In the case of the SO-8 package, the thermal connections are very simple. Pins 5, 6, 7, and 8 are the drain of the MOSFET for a single MOSFET package and are connected together. In a dual package, pins 5 and 6 are one drain, and pins 7 and 8 are the other drain. For a small-signal device or integrated circuit, typical connections would be made with traces that are.2 inches wide. Since the drain pins serve the additional function of providing the thermal connection to the package, this level of connection is inadequate. The total cross section of the copper may be adequate to carry the current required for the application, but it presents a large thermal impedance. Also, heat spreads in a circular fashion from the heat source. In this case the drain pins are the heat sources when looking at heat spread on the PC board Figure. Single MOSFET SO-8 Pad Pattern With Copper Spreading Figure 2. ual MOSFET SO-8 Pad Pattern With Copper Spreading The minimum recommended pad patterns for the single-mosfet SO-8 with copper spreading (Figure ) and dual-mosfet SO-8 with copper spreading (Figure 2) show the starting point for utilizing the board area available for the heat-spreading copper. To create this pattern, a plane of copper overlies the drain pins. The copper plane connects the drain pins electrically, but more importantly provides planar copper to draw heat from the drain leads and start the process of spreading the heat so it can be dissipated into the ambient air. These patterns use all the available area underneath the body for this purpose. Since surface-mounted packages are small, and reflow soldering is the most common way in which these are affixed to the PC board, thermal connections from the planar copper to the pads have not been used. Even if additional planar copper area is used, there should be no problems in the soldering process. The actual solder connections are defined by the solder mask openings. By combining the basic footprint with the copper plane on the drain pins, the solder mask generation occurs automatically. A final item to keep in mind is the width of the power traces. The absolute minimum power trace width must be determined by the amount of current it has to carry. For thermal reasons, this minimum width should be at least.2 inches. The use of wide traces connected to the drain plane provides a low impedance path for heat to move away from the device. APPLICATION NOTE ocument Number: Revision: 8-Jun-7

10 Application Note 826 RECOMMENE MINIMUM PAS FOR SO-8.72 (4.369).28 (.7) APPLICATION NOTE.47 (.94).246 (6.248).52 (3.86).22 (.559).5 (.27) Recommended Minimum Pads imensions in Inches/(mm) Return to Index Return to Index ocument Number: Revision: 2-Jan-8

11 Legal isclaimer Notice Vishay isclaimer ALL PROUCT, PROUCT SPECIFICATIONS AN ATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR ESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer s technical experts. Product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under irective 2/65/EU of The European Parliament and of the Council of June 8, 2 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoHS irective 22/95/EC. We confirm that all the products identified as being compliant to irective 22/95/EC conform to irective 2/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEEC JS79A standards. Please note that some Vishay documentation may still make reference to the IEC definition. We confirm that all the products identified as being compliant to IEC conform to JEEC JS79A standards. Revision: 2-Oct-2 ocument Number: 9