Automotive P-Channel 150 V (D-S) 175 C MOSFET

Transcription

1 Automotive P-Channel 5 V (-S) 75 C MOSFET SQS8ENW. mm Top View Marking Code: Q6 PowerPAK -8W Single. mm S G Bottom View S S FEATURES TrenchFET power MOSFET AEC-Q qualified d % R g and UIS tested Material categorization: for definitions of compliance please see G S PROUCT SUMMARY V S (V) -5 R S(on) ( ) at V GS = - V.95 I (A) -.7 Configuration Single Package PowerPAK -8W P-Channel MOSFET ABSOLUTE MAXIMUM RATINGS (T C = 5 C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT rain-source voltage V S -5 Gate-source voltage V GS ± V Continuous drain current a T C = 5 C -.7 I T C = 5 C -.75 Continuous source current (diode conduction) a I S -8 A Pulsed drain current b I M -9 Single pulse avalanche current I AS - L =. mh Single pulse avalanche energy E AS.8 mj Maximum power dissipation b T C = 5 C 6.5 P T C = 5 C W Operating junction and storage temperature range T J, T stg -55 to +75 Soldering recommendations (peak temperature) e, f 6 C THERMAL RESISTANCE RATINGS PARAMETER SYMBOL LIMIT UNIT Junction-to-ambient PCB mount c R thja 8 C/W Junction-to-case (drain) R thjc. Notes a. Package limited b. Pulse test; pulse width μs, duty cycle % c. When mounted on " square PCB (FR material) d. Parametric verification ongoing e. See solder profile ( The PowerPAK -8W is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection f. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components S8-9-Rev. C, 7-Sep-8 ocument Number: 7668 ARE SUBJECT TO SPECIFIC ISCLAIMERS, SET FORTH AT

2 SQS8ENW SPECIFICATIONS (T C = 5 C, unless otherwise noted) PARAMETER SYMBOL TEST CONITIONS MIN. TYP. MAX. UNIT Static rain-source breakdown voltage V S V GS =, I = -5 μa V Gate-source threshold voltage V GS(th) V S = V GS, I = -5 μa Gate-source leakage I GSS V S = V, V GS = ± V - - ± na Zero gate voltage drain current I SS V GS = V V S = -5 V, T J = 5 C μa V GS = V V S = -5 V V GS = V V S = -5 V, T J = 75 C On-state drain current a I (on) V GS = - V V S 5 V A Notes a. Pulse test; pulse width μs, duty cycle % b. Guaranteed by design, not subject to production testing c. Independent of operating temperature V GS = - V I = -. A rain-source on-state resistance a R S(on) V GS = - V I = -. A, T J = 5 C V GS = - V I = -. A, T J = 75 C Forward transconductance b g fs V S = -5 V, I = - A S ynamic b Input capacitance C iss V GS = V V S = -75 V, f = MHz Output capacitance C oss V GS = V V S = -75 V, f = MHz - 8 pf Reverse transfer capacitance C rss V GS = V V S = -75 V, f = MHz - Total gate charge c Q g V GS = - V V S = -75 V, I = - A - 8 Gate-source charge c Q gs V GS = - V V S = -75 V, I = - A nc Gate-drain charge c Q gd V GS = - V V S = -75 V, I = - A Gate resistance R g f = MHz Turn-on delay time c t d(on) - 7. Rise time c t r V = -75 V, R L = Turn-off delay time c t d(off) I - A, V GEN = - V, R g = ns Fall time c t f Source-rain iode Ratings and Characteristic b Pulsed current a I SM A Forward voltage V S I F = -5 A, V GS = V V Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S8-9-Rev. C, 7-Sep-8 ocument Number: 7668 ARE SUBJECT TO SPECIFIC ISCLAIMERS, SET FORTH AT

3 SQS8ENW TYPICAL CHARACTERISTICS (T A = 5 C, unless otherwise noted) I - rain Current (A).5..5 V GS = V thru 6 V V GS = 5 V I - rain Current (A).6.. T C = 5 C T C = 5 C T C =-55 C. 8 6 V S - rain-to-source Voltage (V). 6 8 V GS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics 5.5 g fs - Transconductance (S) T C = 5 C T C =-55 C T C = 5 C R S(on) - On-Resistance (Ω) V GS = 6 V V GS = V I - rain Current (A) Transconductance I - rain Current (A) On-Resistance vs. rain Current 6 C - Capacitance (pf) 5 5 C rss C iss C oss V GS - Gate-to-Source Voltage (V) 8 6 I =- A V S =-75 V V S - rain-to-source Voltage (V) 6 8 Q g - Total Gate Charge (nc) Capacitance Gate Charge S8-9-Rev. C, 7-Sep-8 ocument Number: 7668 ARE SUBJECT TO SPECIFIC ISCLAIMERS, SET FORTH AT

4 SQS8ENW TYPICAL CHARACTERISTICS (T A = 5 C, unless otherwise noted) R S(on) - On-Resistance (Normalized) I =.5A V GS = V V GS = 6 V T J - Junction Temperature ( C) I S - Source Current (A)... T J = 5 C T J = 5 C V S - Source-to-rain Voltage (V) On-Resistance vs. Junction Temperature Source rain iode Forward Voltage 5. R S(on) - On-Resistance (Ω) T J = 5 C V GS(th) Variance (V) I = 5 ma I = 5 μa T J = 5 C 6 8 V GS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage T J - Temperature ( C) Threshold Voltage -5 V S - rain-to-source Voltage (V) I = ma T J - Junction Temperature ( C) rain Source Breakdown vs. Junction Temperature S8-9-Rev. C, 7-Sep-8 ocument Number: 7668 ARE SUBJECT TO SPECIFIC ISCLAIMERS, SET FORTH AT

5 SQS8ENW THERMAL RATINGS (T A = 5 C, unless otherwise noted) I M limited I - rain Current (A). T C = 5 C Single pulse Limited by R S(on) () BVSS limited ms ms ms s, s, C... V S - rain-to-source Voltage (V) () V GS > minimum V GS at which R S(on) is specified Safe Operating Area Normalized Effective Transient Thermal Impedance. uty Cycle = Single Pulse Notes: Normalized Thermal Transient Impedance, Junction-to-Ambient P M t t t. uty Cycle, = t. Per Unit Base = R thja = 8 C/W. T JM -T A =P M Z (t) thja. Surface Mounted Square Wave Pulse uration (s) S8-9-Rev. C, 7-Sep-8 5 ocument Number: 7668 ARE SUBJECT TO SPECIFIC ISCLAIMERS, SET FORTH AT

6 SQS8ENW THERMAL RATINGS (T A = 5 C, unless otherwise noted) Normalized Effective Transient Thermal Impedance. uty Cycle =.5.. Single Pulse Square Wave Pulse uration (s) Normalized Thermal Transient Impedance, Junction-to-Case - Note The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (5 C) - Normalized Transient Thermal Impedance Junction-to-Case (5 C) are given for general guidelines only to enable the user to get a ball park indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR, size " x " x.6", double sided with oz. copper, % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see S8-9-Rev. C, 7-Sep-8 6 ocument Number: 7668 ARE SUBJECT TO SPECIFIC ISCLAIMERS, SET FORTH AT

7 Package Information PowerPAK -8W Case Outline c θ E E W θ M A e L θ θ Z A etail Z A H E E K 5 E Backside view of single pad Notes Inch will govern imensions exclusive of mold gate burrs imensions exclusive of mold flash and cutting burrs L b IM. MILLIMETERS INCHES MIN. NOM. MAX. MIN. NOM. MAX. A A A b c typ..85 typ. 5. typ..9 typ. E E E E E. typ.. typ. e.65 BSC..6 BSC K.86 typ.. typ. H L L W M.5 typ..5 typ. ECN: C5-5-Rev. B, 6-Nov-5 WG: 6 Revision: 6-Nov-5 ocument Number: 66 For technical questions, contact: pmostechsupport@vishay.com ARE SUBJECT TO SPECIFIC ISCLAIMERS, SET FORTH AT

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