P-Channel 30-V (D-S) MOSFET
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1 i4483ey P-Channel 30-V (-) MOFET PROUCT UMMARY V (V) R (on) (Ω) I (A) at V G = - 0 V at V G = V - FEATURE Halogen-free According to IEC Available TrenchFET Power MOFET E Protection: 3000 V APPLICATION Notebook PC - Load witch - Adapter witch O G 4 5 G 700 Ω Top View Ordering Information: i4483ey-t-e3 (Lead (Pb)-free) i4483ey-t-ge3 (Lead (Pb)-free and Halogen-free) P-Channel ABOLUTE MAXIMUM RATING T A = 5 C, unless otherwise noted Parameter ymbol 0 s teady tate Unit rain-ource Voltage V - 30 V Gate-ource Voltage V G ± 5 Continuous rain Current (T J = 50 C) a T A = 5 C I T A = 70 C A Pulsed rain Current I M - 50 Continuous ource Current (iode Conduction) a I T A = 5 C Maximum Power issipation a P W T A = 70 C Operating Junction and torage Temperature Range T J, T stg - 55 to 50 C THERMAL REITANCE RATING Parameter ymbol Typical Maximum Unit Maximum Junction-to-Ambient a t 0 s 33 4 R thja teady tate C/W Maximum Junction-to-Foot (rain) teady tate R thjf 6 Notes: a. urface Mounted on " x " FR4 board. ocument Number: Rev., -ec-08
2 i4483ey PECIFICATION T J = 5 C, unless otherwise noted Parameter ymbol Test Conditions Min. Typ. Max. Unit tatic Gate Threshold Voltage V G(th) V = V G, I = - 50 µa V V = 0 V, V G = ± 4.5 V ± µa Gate-Body Leakage I G V = 0 V, V G = ± 5 V ± 0 ma V = - 30 V, V G = 0 V - Zero Gate Voltage rain Current I V = - 30 V, V G = 0 V, T J = 70 C - 0 µa On-tate rain Current a I (on) V = - 5 V, V G = - 0 V - 30 A V G = - 0 V, I = - 4 A rain-ource On-tate Resistance a R (on) V G = V, I = - A Ω Forward Transconductance a g fs V = - 5 V, I = - 4 A 60 iode Forward Voltage a V I = -.7 A, V G = 0 V V ynamic b Turn-On elay Time t d(on) 0 5 Rise Time t r V = - 5 V, R L = 5 Ω 0 30 Turn-Off elay Time t d(off) I - A, V GEN = - 0 V, R g = 6 Ω 4 65 µs Fall Time t f Notes: a. Pulse test; pulse width 300 µs, duty cycle %. b. Guaranteed by design, not subject to production testing. tresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERITIC 5 C, unless otherwise noted I G - Gate Current (ma) 6 4 I G - Gate Current (ma) T J = 50 C T J = 5 C V G - Gate-to-ource Voltage (V) Gate-Current vs. Gate-ource Voltage V G - Gate-to-ource Voltage (V) Gate Current vs. Gate-ource Voltage ocument Number: Rev., -ec-08
3 i4483ey TYPICAL CHARACTERITIC 5 C, unless otherwise noted V G = 0 thru 4 V 3 V 40 I - rain Current (A) I - rain Current (A) T C = 5 C 5 C - 55 C V - rain-to-ource Voltage (V) Output Characteristics V G - Gate-to-ource Voltage (V) Transfer Characteristics.6 - On-Resistance (Ω) R (on) V G = 4.5 V V G = 0 V R (on) - On-Resistance (Normalized) I - rain Current (A) On-Resistance vs. rain Current T J - Junction Temperature ( C) On-Resistance vs. Junction Temperature I - ource Current (A) 0 T J = 50 C T J = 5 C - On-Resistance (Ω) R (on) I = 4 A V - ource-to-rain Voltage (V) ource-rain iode Forward Voltage V G - Gate-to-ource Voltage (V) On-Resistance vs. Gate-to-ource Voltage ocument Number: Rev., -ec-08 3
4 i4483ey TYPICAL CHARACTERITIC 5 C, unless otherwise noted I = 50 µa 40 Variance (V) V G(th) Power (W) T J - Temperature ( C) Threshold Voltage Time (s) ingle Pulse Power 00 Limited by R (on)* I - rain Current (A) 0 0. T C = 5 C ingle Pulse ms 0 ms 00 ms s 0 s C V - rain-to-ource Voltage (V) * V G > minimum V G at which r (on) is specified afe Operating Area, Junction-to-Case Normalized Effective Transient Thermal Impedance t uty Cycle = Notes: P M 0.05 t t. uty Cycle, = t 0.0. Per Unit Base = R thja = 70 C/W ingle Pulse 3. T JM - T A = P M Z (t) thja 4. urface Mounted quare Wave Pulse uration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient 4 ocument Number: Rev., -ec-08
5 i4483ey TYPICAL CHARACTERITIC 5 C, unless otherwise noted Normalized Effective Transient Thermal Impedance 0. uty Cycle = ingle Pulse quare Wave Pulse uration (s) Normalized Thermal Transient Impedance, Junction-to-Foot maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for ilicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see /ppg?786. ocument Number: Rev., -ec-08 5
6 Package Information OIC (NARROW): 8-LEA JEEC Part Number: M E H 3 4 A 0.5 mm (Gage Plane) h x 45 C All Leads e B A L q 0.0 mm 0.004" MILLIMETER INCHE IM Min Max Min Max A A B C E e.7 BC BC H h L q ECN: C-0657-Rev. I, -ep-06 WG: 5498 ocument Number: 79 -ep-06
7 VIHAY ILICONIX TrenchFET Power MOFETs Application Note 808 Mounting LITTLE FOOT, O-8 Power MOFETs Wharton Mcaniel urface-mounted LITTLE FOOT power MOFETs use integrated circuit and small-signal packages which have been been modified to provide the heat transfer capabilities required by power devices. Leadframe materials and design, molding compounds, and die attach materials have been changed, while the footprint of the packages remains the same. ee Application Note 86, Recommended Minimum Pad Patterns With Outline rawing Access for MOFETs, ( for the basis of the pad design for a LITTLE FOOT O-8 power MOFET. In converting this recommended minimum pad to the pad set for a power MOFET, designers must make two connections: an electrical connection and a thermal connection, to draw heat away from the package. In the case of the O-8 package, the thermal connections are very simple. Pins 5, 6, 7, and 8 are the drain of the MOFET for a single MOFET package and are connected together. In a dual package, pins 5 and 6 are one drain, and pins 7 and 8 are the other drain. For a small-signal device or integrated circuit, typical connections would be made with traces that are 0.00 inches wide. ince the drain pins serve the additional function of providing the thermal connection to the package, this level of connection is inadequate. The total cross section of the copper may be adequate to carry the current required for the application, but it presents a large thermal impedance. Also, heat spreads in a circular fashion from the heat source. In this case the drain pins are the heat sources when looking at heat spread on the PC board Figure. ingle MOFET O-8 Pad Pattern With Copper preading Figure. ual MOFET O-8 Pad Pattern With Copper preading The minimum recommended pad patterns for the single-mofet O-8 with copper spreading (Figure ) and dual-mofet O-8 with copper spreading (Figure ) show the starting point for utilizing the board area available for the heat-spreading copper. To create this pattern, a plane of copper overlies the drain pins. The copper plane connects the drain pins electrically, but more importantly provides planar copper to draw heat from the drain leads and start the process of spreading the heat so it can be dissipated into the ambient air. These patterns use all the available area underneath the body for this purpose. ince surface-mounted packages are small, and reflow soldering is the most common way in which these are affixed to the PC board, thermal connections from the planar copper to the pads have not been used. Even if additional planar copper area is used, there should be no problems in the soldering process. The actual solder connections are defined by the solder mask openings. By combining the basic footprint with the copper plane on the drain pins, the solder mask generation occurs automatically. A final item to keep in mind is the width of the power traces. The absolute minimum power trace width must be determined by the amount of current it has to carry. For thermal reasons, this minimum width should be at least 0.00 inches. The use of wide traces connected to the drain plane provides a low impedance path for heat to move away from the device. APPLICATION NOTE ocument Number: Revision: 8-Jun-07
8 Application Note 86 RECOMMENE MINIMUM PA FOR O (4.369) 0.08 (0.7) APPLICATION NOTE (.94) 0.46 (6.48) 0.5 (3.86) 0.0 (0.559) (.70) Recommended Minimum Pads imensions in Inches/(mm) Return to Index Return to Index ocument Number: 7606 Revision: -Jan-08
9 Legal isclaimer Notice Vishay isclaimer ALL PROUCT, PROUCT PECIFICATION AN ATA ARE UBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR EIGN OR OTHERWIE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. tatements regarding the suitability of products for certain types of applications are based on Vishay s knowledge of typical requirements that are often placed on Vishay products in generic applications. uch statements are not binding statements about the suitability of products for a particular application. It is the customer s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer s technical experts. Product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoH-Compliant fulfill the definitions and restrictions defined under irective 0/65/EU of The European Parliament and of the Council of June 8, 0 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoH irective 00/95/EC. We confirm that all the products identified as being compliant to irective 00/95/EC conform to irective 0/65/EU. Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEEC J709A standards. Please note that some Vishay documentation may still make reference to the IEC definition. We confirm that all the products identified as being compliant to IEC conform to JEEC J709A standards. Revision: 0-Oct- ocument Number: 9000
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Si6BDS N-Channel -V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) a Q g (Typ).5 at V GS = V 4.5.8 at V GS = 4.5 V.4.6 nc FEATURES Halogen-free According to IEC 649-- Definition TrenchFET Power
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New Product SiEH P-Channel V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) I (A) a Q g (Typ.) G -. at V GS = -.5 V -.5 at V GS = -.5 V -. at V GS = -.8 V - SOT-6 SC-7 (6-LEAS) Top View 6 5 S.5 nc Part
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Si369DS P-Channel 3 V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) Max. I D (A) a Q g (Typ.) - 3.9 at V GS = - V - 7.6.34 at V GS = - 6 V - 7.4 at V GS = - 4.5 V - 6.5 G TO-36 (SOT-3) 3 D.4 nc FEATURES
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P-Channel 30-V (D-S) MOSFET MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) a Q g (Typ.) 0.90 at V GS = - 0 V -.7-30 0.330 at V GS = - 4.5 V -. nc FEATURES Halogen-free According to IEC 649-- Available
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Si33CDS P-Channel V (D-S) MOSFET MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) a Q g (Typ.) -.39 at V GS = -4.5 V -6 e.5 at V GS = -.5 V -5.8.63 at V GS = -.8 V -5. TO-36 (SOT-3) 9 nc FEATURES TrenchFET
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Si469H P-Channel V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) (Ω) I (A) c Q g (Typ.) - SOT-363 SC-7 (6-LEAS).8 at V GS = - V -.7. at V GS = - 4.5 V -.7.55 at V GS = -.5 V -.7 5.5 nc FEATURES Halogen-free
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N-Channel 4 V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) Max. I D (A) a Q g (Typ.) 4.5 at V GS = V 4.3.54 at V GS = 4.5 V 4..7 at V GS =.5 V 3.6 G S TO-36 (SOT-3) 3 D 3.8 nc FEATURES TrenchFET
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Si333DDS P-Channel V (D-S) MOSFET MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) Max. I D (A) a Q g (Typ.).8 at V GS = - 4.5 V - 6 e.3 at V GS = - 3.7 V - 6 e -.4 at V GS = -.5 V - 6 e 9 nc.63 at V GS =
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N-Channel 2 V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) Max. I (A) a Q g (Typ.) 2.3 at V GS = 4.5 V 7.5 4.3 nc.27 at V GS = V 8 d.49 at V GS = 2.5 V 6. TSOP-6 Top View 6 FEATURES TrenchFET Power MOSFET
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P-Channel 2 V (-S) MOSFET Si545AEU PROUCT SUMMARY V S (V) R S(on) () (Max.) I (A) a Q g (Typ.) - 2.96 at V GS = - 4.5 V - 25.32 at V GS = - 2.5 V - 25.22 at V GS = -.8 V - 7 8 PowerPAK ChipFET Single 7
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Si355DV N- and P-Channel 3-V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) N-Channel 3.5 at V GS = V.5.75 at V GS =.5 V. P-Channel - 3. at V GS = - V -..3 at V GS = -.5 V -. FEATURES Halogen-free
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Si3443BDV P-Channel.5-V (G-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) 0.060 at V GS = - 4.5 V - 4.7-0 0.090 at V GS = -.7 V - 3.8 0.00 at V GS = -.5 V - 3.7 FEATURES Halogen-free According
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Si4DS N-Channel V (D-S) MOSFET MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) a Q g (Typ.).4 at V GS = V..67 at V GS = 6 V..9 nc.78 at V GS = 4.5 V.7 FEATURES TrenchFET Power MOSFET % R g Tested
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Si3440DV N-Channel 50-V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) 50 0.375 at V GS = 0 V.5 0.400 at V GS = 6.0 V.4 TSOP-6 Top View FEATURES Halogen-free According to IEC 649-- Definition
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Si5BC N-Channel 3-V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) (Ω) I (A).35 at V GS = V 6.7 3. at V GS =.5 V 6. FEATURES Halogen-free According to IEC 69-- Available TrenchFET Power MOSFET 6-8 ChipFET
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Dual N-Channel -V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A).3 at V GS = V 5.9.53 at V GS = 4.5 V 4.9 FEATURES Halogen-free According to IEC 49-- Definition TrenchFET Power MOSFET Compliant
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Si99H P-Channel. V (G-S) MOSFET PROUCT SUMMARY V S (V) R S(on) (Ω) I (A) c Q g (Typ.) - 8.78 at V GS = -.5 V -..95 at V GS = -.5 V -..5 at V GS = -.8 V -..5 at V GS = -.5 V -.. at V GS = -. V -. b SOT-
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Si8EL N-Channel V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) Max. I (A) c Q g (Typ.). at V GS = V.5.44 at V GS = 4.5 V.4.4 nc.85 at V GS =.5 V. FEATURES TrenchFET Power MOSFET % R g Tested Typical
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SiA483J P-Channel 3 V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) (Max.) I (A) Q g (Typ.) - 3.2at V GS = - V - 2 a 2 nc.3 at V GS = - 4.5 V - 2 a PowerPAK SC-7-6L-Single 6 5 2.5 mm S 4 S 2 3 G 2.5 mm
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N- and P-Channel -V (D-S) MOSFET PRODUCT SUMMARY V DS (V) (Ω) I D (A).77 at V GS =. V N-Channel. at V GS =. V.7 at V GS = -. V - P-Channel -. at V GS = -. V -. FEATURES Halogen-free According to IEC 9--
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Dual P-Channel 3 V (D-S) MOSFET PRODUCT SUMMARY V DS (V) - 3 R DS(on) () at V GS = - V.4 R DS(on) () at V GS = - 4.5 V.78 I D (A) per leg -5.4 Configuration Dual FEATURES TrenchFET Power MOSFET AEC-Q Qualified
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Si7655AN P-Channel 2 V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) Max. I (A) Q g (Typ.).36 at V GS = - V - e - 2.8 at V GS = -.5 V - e 72 nc.9 at V GS = - 2.5 V - e PowerPAK 22-8S FEATURES TrenchFET
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SiA449J P-Channel 3 V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) (Max.) I (A) Q g (Typ.) - 3.24 at V GS = - 4.5 V - 2 a 23. nc.2 at V GS = - V - 2 a.38 at V GS = - 2.5 V - 2 a PowerPAK SC-7-L-Single
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