Automotive N-Channel 200 V (D-S) 175 C MOSFET

Transcription

1 Automotive N-Channel V (D-) 75 C MOFET 6.5 mm PowerPAK O-8L ingle 5.3 mm D 4 G 3 FEATURE TrenchFET power MOFET AEC-Q qualified % R g and UI tested Material categorization: for definitions of compliance please see D Top View Bottom View PRODUCT UMMARY V D (V) R D(on) ( ) at V G = V.45 R D(on) ( ) at V G = 4.5 V.5 I D (A) 3 Configuration ingle Package PowerPAK O-8L G N-Channel MOFET ABOLUTE MAXIMUM RATING (, unless otherwise noted) PARAMETER YMBOL LIMIT UNIT Drain-source voltage V D Gate-source voltage V G ± V Continuous drain current 3 I D 7.5 Continuous source current (diode conduction) a I 6 A Pulsed drain current b I DM 3 ingle pulse avalanche current I A 5 L =. mh ingle pulse avalanche energy E A. mj Maximum power dissipation b 68 P D W Operating junction and storage temperature range T J, T stg -55 to +75 oldering recommendations (peak temperature) d, e 6 C THERMAL REITANCE RATING PARAMETER YMBOL LIMIT UNIT Junction-to-ambient PCB mount c R thja 68 C/W Junction-to-case (drain) R thjc. Notes a. Package limited. b. Pulse test; pulse width 3 μs, duty cycle %. c. When mounted on " square PCB (FR4 material). d. ee solder profile ( The PowerPAK O-8L. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components Rev. A, -Jan-7 Document Number: 7595 ARE UBJECT TO PECIFIC DICLAIMER, ET FORTH AT

2 PECIFICATION (, unless otherwise noted) PARAMETER YMBOL TET CONDITION MIN. TYP. MAX. UNIT tatic Drain-source breakdown voltage V D V G =, I D = 5 μa - - V Gate-source threshold voltage V G(th) V D = V G, I D = 5 μa.5..5 Gate-source leakage I G V D = V, V G = ± V - - ± na Zero gate voltage drain current I D V G = V V D = V, T J = 5 C μa V G = V V D = V - - V G = V V D = V, T J = 75 C On-state drain current a I D(on) V G = V V D 5 V - - A Notes a. Pulse test; pulse width 3 μs, duty cycle %. b. Guaranteed by design, not subject to production testing. c. Independent of operating temperature. V G = V I D = 7.5 A Drain-source on-state resistance a R D(on) V G = 4.5 V I D = 5 A V G = V I D = 7.5 A, T J = 5 C V G = V I D = 7.5 A, T J = 75 C Forward transconductance b g fs V D = 5 V, I D = 7.5 A Dynamic b Input capacitance C iss Output capacitance C oss V G = V V D = 5 V, f = MHz pf Reverse transfer capacitance C rss Total gate charge c Q g Gate-source charge c Q gs V G = V V D = V, I D = A nc Gate-drain charge c Q gd Gate resistance R g f = MHz Turn-on delay time c t d(on) Rise time c t r V DD = V, R L = 5-5 Turn-off delay time c t d(off) I D A, V GEN = V, R g = ns Fall time c t f ource-drain Diode Ratings and Characteristics b Pulsed current a I M A Forward voltage V D I F = 7.5 A, V G = V Body diode reverse recovery time t rr ns Body diode reverse recovery charge Q rr nc I F = 5 A, di/dt = A/μs Reverse recovery fall time t a ns Reverse recovery rise time t b - - Body diode peak reverse recovery current I RM(REC) A tresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability Rev. A, -Jan-7 Document Number: 7595 ARE UBJECT TO PECIFIC DICLAIMER, ET FORTH AT

3 TYPICAL CHARACTERITIC (T A = 5 C, unless otherwise noted) V G = V thru 4 V V G = 3 V T C =-55 C V G - Gate-to-ource Voltage (V) Output Characteristics Transfer Characteristics.4 3 C iss R D(on) - On-Resistance () V G = V V G = 4.5 V C - Capacitance (pf) C rss C oss On-Resistance vs. Drain Current Capacitance.9 V G - Gate-to-ource Voltage (V) I D = A V D = V Q g - Total Gate Charge (nc) R D(on) - On-Resistance (Normalized) I D = 7.5 A V G = V V G = 4.5 V T J - Junction Temperature ( C) Gate Charge On-Resistance vs. Junction Temperature Rev. A, -Jan-7 3 Document Number: 7595 ARE UBJECT TO PECIFIC DICLAIMER, ET FORTH AT

4 TYPICAL CHARACTERITIC (T A = 5 C, unless otherwise noted).8 I - ource Current (A).. T J = 5 C T J = 5 C R D(on) - On-Resistance (Ω) T J = 5 C V D - ource-to-drain Voltage (V). T J = 5 C V G - Gate-to-ource Voltage (V) ource Drain Diode Forward Voltage On-Resistance vs. Gate-to ource Voltage.5 75 V G(th) Variance (V) I D = 5 ma I D = 5 μa g fs - Transconductance () T C = -55 C T J - Temperature ( C) Threshold Voltage Transconductance 4 3 I D = ma T J - Junction Temperature ( C) Drain ource Breakdown vs. Junction Temperature Rev. A, -Jan-7 4 Document Number: 7595 ARE UBJECT TO PECIFIC DICLAIMER, ET FORTH AT

5 TYPICAL CHARACTERITIC (T A = 5 C, unless otherwise noted) I DM limited Limited by R D(on) () µs ms ms ms, s, s, DC. ingle pulse BVD limited... () V G > minimum V G at which R D(on) is specified afe Operating Area Normalized Effective Transient Thermal Impedance.. Duty Cycle =.5. Notes:. P DM.5 t t t.. Duty Cycle, D = t. Per Unit Base = R thja = 68 C/W 3. T JM - T A = P DM Z (t) thja ingle Pulse 4. urface Mounted quare Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Rev. A, -Jan-7 5 Document Number: 7595 ARE UBJECT TO PECIFIC DICLAIMER, ET FORTH AT

6 TYPICAL CHARACTERITIC (T A = 5 C, unless otherwise noted) Normalized Effective Transient Thermal Impedance. Duty Cycle = ingle Pulse quare Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Case Note The characteristics shown in the two graphs - Normalized Transient Thermal Impedance Junction-to-Ambient (5 C) - Normalized Transient Thermal Impedance Junction-to-Case (5 C) are given for general guidelines only to enable the user to get a ball park indication of part capabilities. The data are extracted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. The latter is valid for the part mounted on printed circuit board - FR4, size " x " x.6", double sided with oz. copper, % on both sides. The part capabilities can widely vary depending on actual application parameters and operating conditions. maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for ilicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see Rev. A, -Jan-7 6 Document Number: 7595 ARE UBJECT TO PECIFIC DICLAIMER, ET FORTH AT

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