P-Channel 30 V (D-S) MOSFET
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1 P-Channel 3 V (-) MOFET ian 3.3 mm Top View PROUCT UMMARY PowerPAK 22-8 ingle mm 4 G Bottom View V (V) -3 R (on) max. () at V G = V.49 R (on) max. () at V G = 4.5 V.82 Q g typ. (nc) 27 I (A) 6 a, g Configuration ingle FEATURE TrenchFET Gen IV p-channel power MOFET Provides exceptionally low R (ON) in a compact package that is thermally enhanced Enables higher power density % R g and UI tested Material categorization: for definitions of compliance please see APPLICATION Battery management in mobile devices Adapter and charger switch Battery switch Load switch G P-Channel MOFET ORERING INFORMATION Package PowerPAK 22-8 Lead (Pb)-free and halogen-free ian-t-ge3 ABOLUTE MAXIMUM RATING (, unless otherwise noted) PARAMETER YMBOL LIMIT UNIT rain-source voltage V -3 V Gate-source voltage V G +6 / -2-6 a T C = 7 C -6 Continuous drain current (T J = 5 C) I a b, c T A = 7 C 8.4 b, c A Pulsed drain current (t = μs) I M Continuous source-drain diode current I -3.3 b, c ingle pulse avalanche current I A -25 L =. mh ingle pulse avalanche energy E A 3.2 mj 52 T C = 7 C 33 Maximum power dissipation I P W 3.7 b, c T A = 7 C 2.4 b, c Operating junction and storage temperature range T J, T stg -55 to +5 C oldering recommendations (peak temperature) c 26 THERMAL REITANCE RATING PARAMETER YMBOL TYPICAL MAXIMUM UNIT Maximum junction-to-ambient b t s R thja C/W Maximum junction-to-case (drain) teady state R thjf Notes a. Package limited b. urface mounted on " x " FR4 board c. t = s d. ee solder profile ( The PowerPAK 22-8 is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components f. Maximum under steady state conditions is 8 C/W g Rev. A, 4-ep-7 ocument Number: 7698 ARE UBJECT TO PECIFIC ICLAIMER, ET FORTH AT
2 ian PECIFICATION (T J = 25 C, unless otherwise noted) PARAMETER YMBOL TET CONITION MIN. TYP. MAX. UNIT tatic rain-source breakdown voltage V V G = V, I = -25 μa V V temperature coefficient V /T J I = - ma V G(th) temperature coefficient V G(th) /T J I = -25 μa mv/ C Gate-source threshold voltage V G(th) V = V G, I = 25 μa V Gate-source leakage I G V = V, V G = +6 / -2 V - - na V = -3 V, V G = V Zero gate voltage drain current I V = -3 V, V G = V, T J = 7 C μa On-state drain current a I (on) V - V, V G = - V A rain-source on-state resistance a V G = - V, I = -5 A R (on) V G = -4.5 V, I = - A Forward transconductance a g fs V = -5 V, I = -5 A ynamic b Input capacitance C iss Output capacitance C oss V = -5 V, V G = V, f = MHz pf Reverse transfer capacitance C rss V = -5 V, V G = - V, I = - A Total gate charge Q g nc Gate-source charge Q gs V = -5 V, V G = -4.5 V, I =- A Gate-drain charge Q gd Gate resistance R g f = MHz Turn-on delay time t d(on) Rise time t r V = -5 V, R L =.5, I - A, Turn-off delay time t d(off) V GEN = - V, R g = Fall time t f - 2 Turn-on delay time t d(on) ns Rise time t r V = -5 V, R L =.5, I - A, Turn-off delay time t d(off) V GEN = -4.5 V, R g = Fall time t f rain-ource Body iode Characteristics Continuous source-drain diode current I Pulse diode forward current I M A Body diode voltage V I = -5 A, V G = V V Body diode reverse recovery time t rr ns Body diode reverse recovery charge Q rr nc I F = - A, di/dt = A/μs, T J = 25 C Reverse recovery fall time t a ns Reverse recovery rise time t b Notes a. Pulse test; pulse width 3 μs, duty cycle 2 % b. Guaranteed by design, not subject to production testing tresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability Rev. A, 4-ep-7 2 ocument Number: 7698 ARE UBJECT TO PECIFIC ICLAIMER, ET FORTH AT
3 ian TYPICAL CHARACTERITIC (25 C, unless otherwise noted) 5 5 V G = V thru 5 V 2 V G = 4 V 2 I - rain Current (A) V G = 3 V V G = 2 V V - rain-to-ource Voltage (V) I - rain Current (A) T C =-55 C V G - Gate-to-ource Voltage (V) Output Characteristics Transfer Characteristics.5 45 R (on) - On-Resistance (Ω) V G = 4.5 V V G = V C - Capacitance (pf) C rss C oss C iss I - rain Current (A) V - rain-to-ource Voltage (V) On-Resistance vs. rain Current and Gate Voltage Capacitance V G - Gate-to-ource Voltage (V) I = A V = V, 5 V, 2 V Q g - Total Gate Charge (nc) R (on) - On-Resistance (Normalized) I = 5 A V G = V V G = 4.5 V T J - Junction Temperature ( C) Gate Charge On-Resistance vs. Junction Temperature 7-37-Rev. A, 4-ep-7 3 ocument Number: 7698 ARE UBJECT TO PECIFIC ICLAIMER, ET FORTH AT
4 ian TYPICAL CHARACTERITIC (25 C, unless otherwise noted). I - ource Current (A).. T J = 5 C T J = 25 C V G(th) - Variance (V) I = 25 μa I = 5 ma V - ource-to-rain Voltage (V) ource-rain iode Forward Voltage T J - Temperature ( C) Threshold Voltage.2 5 I = 5 A R (on) - On-Resistance (Ω) T J = 25 C T J = 25 C Power (W) V G - Gate-to-ource Voltage (V)... Time (s) On-Resistance vs. Gate-to-ource Voltage ingle Pulse Power, Junction-to-Ambient I - rain Current (A) I M limited I limited μs ms Limited by R () (on) ms ms s. s ingle pulse BV limited C... V - rain-to-ource Voltage (V) () V G > minimum V G at which R (on) is specified afe Operating Area, Junction-to-Ambient 7-37-Rev. A, 4-ep-7 4 ocument Number: 7698 ARE UBJECT TO PECIFIC ICLAIMER, ET FORTH AT
5 ian TYPICAL CHARACTERITIC (25 C, unless otherwise noted) 8 I - rain Current (A) Package limited T C - Case Temperature ( C) Current erating a Power (W) Power (W) T C - Case Temperature ( C) T A - Ambient Temperature ( C) Power, Junction-to-Case Power, Junction-to-Ambient Note a. The power dissipation P is based on T J max. = 5 C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit 7-37-Rev. A, 4-ep-7 5 ocument Number: 7698 ARE UBJECT TO PECIFIC ICLAIMER, ET FORTH AT
6 ian TYPICAL CHARACTERITIC (25 C, unless otherwise noted) Normalized Effective Transient Thermal Impedance. uty Cycle = ingle pulse 3. T JM -T A = P M Z (t) thja 4. urface mounted..... quare Wave Pulse uration (s) Notes: Normalized Thermal Transient Impedance, Junction-to-Ambient P M t t 2 t. uty cycle, = t 2 2. Per unit base = R thja = 8 C/W uty Cycle =.5 Normalized Effective Transient Thermal Impedance ingle pulse quare Wave Pulse uration (s) Normalized Thermal Transient Impedance, Junction-to-Case maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for ilicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see Rev. A, 4-ep-7 6 ocument Number: 7698 ARE UBJECT TO PECIFIC ICLAIMER, ET FORTH AT
7 Legal isclaimer Notice Vishay isclaimer ALL PROUCT, PROUCT PECIFICATION AN ATA ARE UBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR EIGN OR OTHERWIE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. tatements regarding the suitability of products for certain types of applications are based on Vishay s knowledge of typical requirements that are often placed on Vishay products in generic applications. uch statements are not binding statements about the suitability of products for a particular application. It is the customer s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer s technical experts. Product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. 27 VIHAY INTERTECHNOLOGY, INC. ALL RIGHT REERVE Revision: 8-Feb-7 ocument Number: 9
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