N-Channel 20-V (D-S) MOSFET

Transcription

1 i7868p N-Channel -V (-) MOFET PROUCT UMMARY V (V) r (on) (Ω) I V G =V V G =4.5V 5 FEATURE TrenchFETr Power MOFET Low r (on) PWM (Q gd and R g ) Optimized % R g Tested APPLICATION Low Output Voltage ynchronous Rectifier PowerPAKr O mm 5.5 mm 3 G 4 Bottom View Ordering Information: i7868p-t i7868p-t E3 (Lead (Pb)-Free) G N-Channel MOFET ABOLUTE MAXIMUM RATING (T A =5_C UNLE OTHERWIE NOTE) Parameter ymbol secs teady tate Unit rain-ource Voltage V Gate-ource Voltage V G 6 V T A =5_C 9 8 Continuous rain Current (T J = 5_C) a T A =7_C I 5 4 Pulsed rain Current ( ms Pulse Width) I M 6 A Continuous ource Current (iode Conduction) a I Avalanche Current I A 5 ingle Pulse Avalanche Energy L=.mH E A 5 mj T A =5_C Maximum Power issipation a T A =7_C P W Operating Junction and torage Temperature Range T J,T stg --55 to 5 _C THERMAL REITANCE RATING Parameter ymbol Typical Maximum Unit t sec Maximum Junction-to-Ambient t t a teady tate 8 3 R thja 5 65 _C/W Maximum Junction-to-Case (rain) teady tate R thjc..5 Notes a. urface Mounted on x FR4 Board. ocument Number: Rev., 3-Aug-4

2 i7868p PECIFICATION (T J =5_C UNLE OTHERWIE NOTE) Parameter ymbol Test Condition Min Typ Max Unit tatic Gate Threshold Voltage V G(th) V =V G,I = 5 ma.6.5 V Gate-Body Leakage I G V =V,V G = 6 V na Zero Gate Voltage rain Current I V =V,V G =V,T J =55_C 5 V =V,V G =V ma On-tate rain Current a I (on) V 5V,V G =V 3 A V G = V,I =9A.8.5 rain-ource On-tate Resistance a r (on) V G =4.5V,I =5A..75 Ω Forward Transconductance a g fs V =6V,I =9 A 95 iode Forward Voltage a V I =4.5A,V G =V.63. V ynamic b Total Gate Charge Q g 5 75 Gate-ource Charge Q gs V =V, V G =4.5V,I =9A nc Gate-rain Charge Q gd Gate Resistance R g.5..8 Ω Turn-On elay Time t d(on) 53 8 Rise Time t r V V =V,R L =Ω Ω Turn-Off elay Time t d(off) I A,V GEN =4.5V,R G =6Ω 5 4 ns Fall Time t f 75 ource-rain Reverse Recovery Time t rr I F =.9 A, di/dt = A/ms 65 Notes a. Pulse test; pulse width 3 ms, duty cycle %. b. Guaranteed by design, not subject to production testing. TYPICAL CHARACTERITIC (5_C UNLE NOTE) 6 Output Characteristics V G =thru3v 6 Transfer Characteristics rain Current (A) 4 3 V -- rain Current (A) 4 3 T C = 5_C I I 5_C -- 55_C V -- rain-to-ource Voltage (V) V G -- Gate-to-ource Voltage (V) ocument Number: Rev., 3-Aug-4

3 i7868p TYPICAL CHARACTERITIC (5_C UNLE NOTE).3 On-Resistance vs. rain Current Capacitance V G -- Gate-to-ource Voltage (V) r (on) -- On-Resistance ( Ω ) V =V I =9A I -- rain Current (A) Gate Charge V G =4.5V V G =V C -- Capacitance (pf) r (on) -- On-Resiistance (Normalized) C rss V G =V I =9A C iss C oss V -- rain-to-ource Voltage (V) On-Resistance vs. Junction Temperature Q g -- Total Gate Charge (nc) T J -- Junction Temperature (_C) 6 ource-rain iode Forward Voltage. On-Resistance vs. Gate-to-ource Voltage -- ource Current (A) I T J = 5_C T J =5_C r (on) -- On-Resistance ( Ω ) I =9 A V -- ource-to-rain Voltage (V) V G -- Gate-to-ource Voltage (V) ocument Number: Rev., 3-Aug-4 3

4 i7868p TYPICAL CHARACTERITIC (5_C UNLE NOTE).4 Threshold Voltage ingle Pulse Power. I = 5 ma 6 Variance (V) V G(th) Power (W) T J -- Temperature (_C) Time (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance uty Cycle =.5. Notes:.. P M.5 t t t.. uty Cycle, = t. Per Unit Base = R thja =5_C/W 3. T JM -- T A =P M Z (t) thja ingle Pulse 4. urface Mounted quare Wave Pulse uration (sec) Normalized Thermal Transient Impedance, Junction-to-Case Normalized Effective Transient Thermal Impedance. uty Cycle =.5.. ingle Pulse quare Wave Pulse uration (sec) 4 ocument Number: Rev., 3-Aug-4

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