Power MOSFET. IRFD9010PbF SiHFD9010-E3 IRFD9010 SiHFD9010

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1 IRF9, ihf9 Power MOFET PROUCT UMMARY (V) 5 R (on) (Ω) = V.5 Q g (Max.) (nc) Q gs (nc) 3. Q gd (nc). Configuration ingle HVMIP G G PChannel MOFET ORERING INFORMATION Package Lead (Pb)free npb FEATURE For Automatic Insertion Compact, End tackable Fast witching Low rive Current Easy Paralleled Excellent Temperature tability PChannel Versatility Compliant to RoH irective 22/95/EC ECRIPTION The HVMIP technology is the key to Vishay s advanced line of power MOFET transistors. The efficient geometry and unique processing of the HVMIP design achieves very low onstate resistance combined with high transconductance and extreme device ruggedness. The pchannel HVMIPs are designed for application which require the convenience of reverse polarity operation. They retain all of the features of the more common nchannel HVMIPs such as voltage control, very fast switching, ease of paralleling, and excellent temperature stability. Pchannels HVMIPs are intended for use in power stages where complementary symmetry with nchannel devices offers circuit simplification. They are also very useful in drive stages because of the circuit versatility offered by the reverse polarity connection. Applications include motor control, audio amplifiers, switched mode converters, control circuits and pulse amplifiers. HVMIP IRF9PbF ihf9e3 IRF9 ihf9 ABOLUTE MAXIMUM RATING (T C = 25 C, unless otherwise noted) PARAMETER YMBOL LIMIT UNIT rainource Voltage 5 V Gateource Voltage ± 2 T C = 25 C. Continuous rain Current at V T C = C. A Pulsed rain Current a M. Linear erating Factor. W/ C Inductive Current, Clamped L = µh see fig. I LM. A Inductive Current, Unclamped (Avalanche Current) see fig. 5 I L.5 Maximum Power issipation T C = 25 C P W Operating Junction and torage Temperature Range, T stg 55 to 5 C oldering Recommendations (Peak Temperature) for s 3 d Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. ). b. = 25 V, starting = 25 C, L = 52 mh, R g = 25 Ω, I A = 2. A (see fig. 2). c. I. A, di/dt 75 A/μs,, 75 C. d.. mm from case. * Pb containing terminations are not RoH compliant, exemptions may apply ocument Number: 95 99Rev. A, 2Apr

2 IRF9, ihf9 THERMAL REITANCE RATING PARAMETER YMBOL TYP. MAX. UNIT Maximum JunctiontoAmbient R thja 2 C/W PECIFICATION ( = 25 C, unless otherwise noted) PARAMETER YMBOL TET CONITION MIN. TYP. MAX. UNIT tatic rainource Breakdown Voltage = V, = 25 μa 5 V Temperature Coefficient Δ / Reference to 25 C, = ma.9 V/ C Gateource Threshold Voltage (th) =, = 25 μa 2.. V Gateource Leakage I G = ± 2 V ± 5 na = 5 V, = V 25 Zero Gate Voltage rain Current = V, = V, = 25 C μa Ontate rain Current (on) = V > (on) x R (on) max.. A rainource Ontate Resistance R (on) = V =.5 A b.35.5 Ω Forward Transconductance g fs = 2 V, = 2. A ynamic Input Capacitance C iss = V, 2 Output Capacitance C oss = 25 V, pf Reverse Transfer Capacitance C rss f =. MHz, see fig. 5 3 Total Gate Charge Q g 7.2 Gateource Charge Q gs I = V =.7 A, =. V see fig. and 3 b nc Gaterain Charge Q gd 2.7. TurnOn elay Time t d(on). 9.2 Rise Time t r = 25 V, =.7 A 7 7 R g = 2 Ω, R = 5. Ω, TurnOff elay Time t d(off) see fig. b 3 2 ns Fall Time t f Internal rain Inductance L Between lead,. mm (.25") from G package and center of Internal ource Inductance L die contact. nh rainource Body iode Characteristics Continuous ourcerain iode Current I MOFET symbol showing the. A Pulsed iode Forward Current a I M integral reverse p n junction diode. G Body iode Voltage V = 25 C, I =.7 A, = V b 5.5 V Body iode Reverse t rr ns Recovery Time = 25 C, I F =.7 A, di/dt = A/μs b Body iode Reverse Recovery Charge Q rr μc Forward TurnOn Time t on Intrinsic turnon time is negligible (turnon is dominated by L and L ) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. ). b. Pulse width 3 μs; duty cycle 2 %. ocument Number: Rev. A, 2Apr

3 IRF9, ihf9 TYPICAL CHARACTERITIC (25 C, unless otherwise noted) V 2 5 μs Pulse Width 5 V 7 V = V 5 V V 2 25 R (on), raintoource on Resistance (Normalized) =.7 V 2 2 = V 2, raintoource Voltage (V), Junction Temperature ( C) Fig. Typical Output Characteristics Fig. Normalized OnResistance vs. Temperature 2 μs Pulse Width V V 7 V = V 5 V Capacitance (pf) = V, f = MHz C iss = C gs C gd, C ds horted C rss = C gd C oss = C ds C gd C iss C oss C rss 2 3 V 5, raintoource Voltage (V), raintoource Voltage (V) Fig. 2 Typical Output Characteristics Fig. 5 Typical Capacitance vs. raintoource Voltage... μs Pulse Width = 2 x = 5 C 3 = 25 C, Gatetoource Voltage (V) 2 2 =.7 A 3 = V 9 For Test Circuit ee Figure 3 2 5, raintoource Voltage (V) Q g, Total Gate Charge (nc) Fig. 3 Typical Transfer Characteristics Fig. Typical Gate Charge vs. Gatetoource Voltage ocument Number: 95 99Rev. A, 2Apr 3

4 IRF9, ihf9 2. I, Reverse rain Current (A) = 5 C = 25 C V, ourcetorain Voltage (V) Fig. 7 Typical ourcerain iode Forward Voltage T C, Case Temperature ( C) Fig. 9 Maximum rain Current vs. Case Temperature Operation in this Area Limited by R (on) R. T C = 25 C = 5 C ingle Pulse., raintoource Voltage (V) μs μs ms ms ms s C Fig. Maximum afe Operating Area Pulse width µs uty factor. % Fig. a witching Time Test Circuit % R g V.U.T. t d(on) t r t d(off) t f 9 % Fig. b witching Time Waveforms ocument Number: 95 99Rev. A, 2Apr

5 IRF9, ihf9 Thermal Response (Z thjc ) ingle Pulse (Thermal Response)... P M t t 2 Notes:. uty Factor, = t /t 2 2. Peak = P M x T thjc T C t, Rectangular Pulse uration (s) Fig. Maximum Effective Transient Thermal Impedance, JunctiontoCase L Vary t p to obtain required I A V Q G R g.u.t Q G Q G V t p I A. W V G Charge Fig. 2a Unclamped Inductive Test Circuit Fig. 3a Basic Gate Charge Waveform Current regulator ame type as.u.t. I A 5 kω 2 V.2 µf.3 µf.u.t. t p 3 ma I G Current sampling resistors Fig. 2b Unclamped Inductive Waveforms Fig. 3b Gate Charge Test Circuit ocument Number: 95 99Rev. A, 2Apr 5

6 IRF9, ihf9 Peak iode Recovery dv/dt Test Circuit.U.T. Circuit layout considerations Low stray inductance Ground plane Low leakage inductance current transformer R g dv/dt controlled by R G I controlled by duty factor "".U.T. device under test Compliment NChannel of.u.t. for driver river gate drive P.W. Period = P.W. Period = V*.U.T. I waveform Reverse recovery current Reapplied voltage Body diode forward current di/dt.u.t. waveform iode recovery dv/dt Inductor current Body diode forward drop Ripple 5 % I * = 5 V for logic level and 3 V drive devices Fig. For PChannel maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for ilicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see /ppg?95. ocument Number: 95 99Rev. A, 2Apr

7 Legal isclaimer Notice Vishay isclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, lifesaving, or lifesustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. ocument Number: 9 Revision: Jul