Power MOSFET. IRF9640PbF SiHF9640-E3 IRF9640 SiHF9640

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1 Power MOSFET PRODUCT SUMMARY V DS (V) 200 R DS(on) () = 10 V 0.50 Q g max. (nc) 44 Q gs (nc) 7.1 Q gd (nc) 27 Configuration Single S TO220AB G FEATURES Dynamic dv/dt rating Available Repetitive avalanche rated Pchannel Available Fast switching Ease of paralleling Simple drive requirements Material categorization: for definitions of compliance please see Note * This datasheet provides information about parts that are RoHScompliant and / or parts that are nonrohscompliant. For example, parts with lead (Pb) terminations are not RoHScompliant. Please see the information / tables in this datasheet for details. G DS ORDERING INFORMATION Package Lead (Pb)free SnPb D PChannel MOSFET DESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and costeffectiveness. The TO220AB package is universally preferred for all commercialindustrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO220AB contribute to its wide acceptance throughout the industry. TO220AB IRF9640PbF SiHF9640E3 IRF9640 SiHF9640 ABSOLUTE MAXIMUM RATINGS (T C = 25 C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT DrainSource Voltage V DS 200 V GateSource Voltage ± 20 V Continuous Drain Current at 10 V T C = 25 C 11 I D T C = 100 C 6.8 A Pulsed Drain Current a I DM 44 Linear Derating Factor 1.0 W/ C Single Pulse Avalanche Energy b E AS 700 mj Repetitive Avalanche Current a I AR 11 A Repetitive Avalanche Energy a E AR 13 mj Maximum Power Dissipation T C = 25 C P D 125 W Peak Diode Recovery dv/dt c dv/dt 5.0 V/ns Operating Junction and Storage Temperature Range T J, T stg 55 to +150 Soldering Recommendations (Peak temperature) d for 10 s 300 C Mounting Torque 632 or M3 screw Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. V DD = 50 V, starting T J = 25 C, L = 8.7 mh, R g = 25, I AS = 11 A (see fig. 12). c. I SD 11 A, di/dt 150 A/μs, V DD V DS, T J 150 C. d. 1.6 mm from case. 10 lbf in 1.1 N m S160754Rev. C, 02May16 1 Document Number: 91086

2 THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT Maximum JunctiontoAmbient R thja 62 CasetoSink, Flat, Greased Surface R thcs 0.50 C/W Maximum JunctiontoCase (Drain) R thjc 1.0 SPECIFICATIONS (T J = 25 C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static DrainSource Breakdown Voltage V DS = 0 V, I D = 250 μa 200 V V DS Temperature Coefficient V DS /T J Reference to 25 C, I D = 1 ma 0.2 V/ C GateSource Threshold Voltage (th) V DS =, I D = 250 μa V GateSource Leakage I GSS = ± 20 V ± 100 na V DS = 200 V, = 0 V 100 Zero Gate Voltage Drain Current I DSS V DS = 160 V, = 0 V, T J = 125 C 500 μa DrainSource OnState Resistance R DS(on) = 10 V I D = 6.6 A b 0.50 Forward Transconductance g fs V DS = 50 V, I D = 6.6 A b 4.1 S Dynamic Input Capacitance C iss VGS = 0 V, 1200 Output Capacitance C oss V DS = 25 V, 370 pf Reverse Transfer Capacitance C rss f = 1.0 MHz, see fig Total Gate Charge Q g 44 GateSource Charge Q gs I = 10 V D = 11 A, V DS = 160 V, see fig. 6 and 13 b 7.1 nc GateDrain Charge Q gd 27 TurnOn Delay Time t d(on) 14 Rise Time t r V DD = 100 V, I D = 11 A 43 TurnOff Delay Time t d(off) R g = 9.1, R D = 8.6, see fig. 10 b 39 ns Fall Time t f 38 Between lead, D Internal Drain Inductance L D mm (0.25") from G package and center of Internal Source Inductance L S die contact 7.5 S nh Gate Input Resistance R g f = 1 MHz, open drain DrainSource Body Diode Characteristics MOSFET symbol D Continuous SourceDrain Diode Current I S 11 showing the integral reverse Pulsed Diode Forward Current a G I SM p n junction diode 44 S A Body Diode Voltage V SD T J = 25 C, I S = 11 A, = 0 V b 5 V Body Diode Reverse Recovery Time t rr ns Body Diode Reverse Recovery Charge Q rr T J = 25 C, I F = 11 A, di/dt = 100 A/μs b μc Forward TurnOn Time t on Intrinsic turnon time is negligible (turnon is dominated by L S and L D ) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 μs; duty cycle 2 %. S160754Rev. C, 02May16 2 Document Number: 91086

3 TYPICAL CHARACTERISTICS (25 C, unless otherwise noted) I D, Drain Current (A) 91086_ Top 15 V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom 4.5 V V DS, DraintoSource Voltage (V) 4.5 V 20 µs Pulse Width T C = 25 C Fig. 1 Typical Output Characteristics, T C = 25 C R DS(on), DraintoSource On Resistance (Normalized) 91086_ I D = 11 A = 10 V T J, Junction Temperature ( C) Fig. 4 Normalized OnResistance vs. Temperature I D, Drain Current (A) 91086_ Top Bottom 15 V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V 4.5 V µs Pulse Width T C = 150 C V DS, DraintoSource Voltage (V) 4.5 V Fig. 2 Typical Output Characteristics, T C = 150 C Capacitance (pf) 91086_ = 0 V, f = 1 MHz C iss = C gs + C gd, C ds Shorted C rss = C gd C oss = C ds + C gd C iss C oss C rss V DS, DraintoSource Voltage (V) Fig. 5 Typical Capacitance vs. DraintoSource Voltage I D, Drain Current (A) C 150 C 20 µs Pulse Width V DS = 50 V , GatetoSource Voltage (V) I D = 11 A V DS = 100 V V DS = 40 V V DS = 160 V For test circuit see figure _03, GatetoSource Voltage (V) 91086_06 Q G, Total Gate Charge (nc) Fig. 3 Typical Transfer Characteristics Fig. 6 Typical Gate Charge vs. DraintoSource Voltage S160754Rev. C, 02May16 3 Document Number: 91086

4 12 I SD, Reverse Drain Current (A) C 150 C = 0 V I D, Drain Current (A) _07 V SD, SourcetoDrain Voltage (V) 91086_09 T C, Case Temperature ( C) Fig. 7 Typical SourceDrain Diode Forward Voltage Fig. 9 Maximum Drain Current vs. Case Temperature I D, Drain Current (A) 91086_ Operation in this area limited by R DS(on) 10 µs T C = 25 C T J = 150 C Single Pulse µs 1 ms 10 ms V DS, DraintoSource Voltage (V) Fig. 8 Maximum Safe Operating Area R G 10 V V DS Pulse width 1 µs Duty factor 0.1 % R D D.U.T. V + DD Fig. 10a Switching Time Test Circuit V t d(on) t r t d(off) t f 10 % 90 % Fig. 10b Switching Time Waveforms 10 Thermal Response (Z thjc ) D = Single Pulse (Thermal Response) P DM t 1 t 2 Notes: 1. Duty Factor, D = t 1 /t 2 2. Peak T j = P DM x Z thjc + T C 91086_11 t 1, Rectangular Pulse Duration (s) Fig. 11 Maximum Effective Transient Thermal Impedance, JunctiontoCase S160754Rev. C, 02May16 4 Document Number: 91086

5 V DS L I AS R G V DS D.U.T + V DS 10 V t p I AS 0.01 Ω t p V DD V (BR)DSS Fig. 12a Unclamped Inductive Test Circuit Fig. 12b Unclamped Inductive Waveforms E AS, Single Pulse Energy (mj) 91086_12c Top Bottom I D 4.9 A 7.0 A 11 A V DD = 50 V Starting T J, Junction Temperature ( C) Fig. 12c Maximum Avalanche Energy vs. Drain Current Current regulator Same type as D.U.T. 10 V Q G 12 V 0.2 µf 50 kω 0.3 µf Q GS Q GD D.U.T. + V DS V G Charge 3 ma I G I D Current sampling resistors Fig. 13a Basic Gate Charge Waveform Fig. 13b Gate Charge Test Circuit S160754Rev. C, 02May16 5 Document Number: 91086

6 + Peak Diode Recovery dv/dt Test Circuit D.U.T. + Circuit layout considerations Low stray inductance Ground plane Low leakage inductance current transformer + R g dv/dt controlled by R g I SD controlled by duty factor D D.U.T. device under test + V DD Note Compliment NChannel of D.U.T. for driver Driver gate drive P.W. Period D = P.W. Period = 10 V a D.U.T. l SD waveform Reverse recovery current Reapplied voltage Body diode forward current di/dt D.U.T. V DS waveform Diode recovery dv/dt Body diode forward drop Inductor current V DD Ripple 5 % Note a. = 5 V for logic level and 3 V drive devices I SD Fig. 14 For PChannel maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see S160754Rev. C, 02May16 6 Document Number: 91086

7 Package Information TO2201 D L H(1) Q L(1) 1 E 2 3 M * b(1) Ø P A F DIM. MILLIMETERS INCHES MIN. MAX. MIN. MAX. A b b(1) c D E e e(1) F H(1) J(1) L L(1) Ø P Q ECN: X150364Rev. C, 14Dec15 DWG: 6031 Note M* = inches to inches (dimension including protrusion), heatsink hole for HVM e b C e(1) J(1) ASE Package Picture Xi an Revison: 14Dec15 1 Document Number: 66542

8 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, noninfringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer s technical experts. Product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, lifesaving, or lifesustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 08Feb17 1 Document Number: 91000

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