E Series Power MOSFET

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1 E Series Power MOSFET SiHS9N65E PRODUCT SUMMARY (V) at T J max. 7 R DS(on) () typ. at 25 C V GS = V.25 Q g (nc) max. 59 Q gs (nc) 84 Q gd (nc) 6 Configuration Single FEATURES Low figureofmerit (FOM) R on x Q g Low input capacitance (C iss ) Reduced switching and conduction losses Ultra low gate charge (Q g ) Avalanche energy rated (UIS) Material categorization: for definitions of compliance please see SUPER247 S D G G D S NChannel MOSFET APPLICATIONS Server and telecom power supplies Switch mode power supplies (SMPS) Power factor correction power supplies (PFC) Lighting Highintensity discharge (HID) Fluorescent ballast lighting Industrial Welding Induction heating Motor drives Battery chargers Renewable energy Solar (PV inverters) ORDERING INFORMATION Package Lead (Pb)free Super247 SiHS9N65EE3 ABSOLUTE MAXIMUM RATINGS (T C = 25 C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT DrainSource Voltage 65 V GateSource Voltage V GS ± 3 Continuous Drain Current (T J = 5 C) V GS at V T C = 25 C 87 I D T C = C 55 A Pulsed Drain Current a I DM 323 Linear Derating Factor 5 W/ C Single Pulse Avalanche Energy b E AS 93 mj Maximum Power Dissipation P D 625 W Operating Junction and Storage Temperature Range T J, T stg 55 to 5 C DrainSource Voltage Slope T J = 25 C 4 dv/dt Reverse Diode dv/dt d 4. V/ns Soldering Recommendations (Peak Temperature) c for s 3 C Notes a. Repetitive rating; pulse width limited by maximum junction temperature. b. = 4 V, starting T J = 25 C, L = 28.2 mh, R g = 25, I AS =.7 A. c..6 mm from case. d. I SD I D, di/dt = A/μs, starting T J = 25 C. S6232Rev. A, 5Feb6 Document Number: 9585 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

2 SiHS9N65E THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. UNIT Maximum JunctiontoAmbient R thja 4 C/W Maximum JunctiontoCase (Drain) R thjc.2 SPECIFICATIONS (T J = 25 C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT Static DrainSource Breakdown Voltage V GS = V, I D = 25 μa 65 V Temperature Coefficient /T J Reference to 25 C, I D = ma.83 V/ C Gate Threshold Voltage (N) V GS(th) = V GS, I D = 25 μa V GateSource Leakage I GSS V GS = ± 2 V ± na V GS = ± 3 V ± μa = 65 V, V GS = V Zero Gate Voltage Drain Current I DSS = 52 V, V GS = V, T J = 25 C 25 μa DrainSource OnState Resistance R DS(on) V GS = V I D = 45 A Forward Transconductance a g fs = 3 V, I D = 45 A 32 S Dynamic Input Capacitance C iss VGS = V, 826 Output Capacitance C oss = V, 528 Reverse Transfer Capacitance C rss f = 3 khz 9 Effective Output Capacitance, Energy pf Related a C o(er) 384 V GS = V, = V to 52 V Effective Output Capacitance, Time Related b C o(tr) 52 Total Gate Charge Q g GateSource Charge Q gs V GS = V I D = 45 A, = 52 V 84 nc GateDrain Charge Q gd 6 TurnOn Delay Time t d(on) Rise Time t r = 52 V, I D = 45 A, TurnOff Delay Time t d(off) V GS = V, R g = ns Fall Time t f Gate Input Resistance R g f = MHz, open drain DrainSource Body Diode Characteristics MOSFET symbol D Continuous SourceDrain Diode Current I S 87 showing the integral reverse G Pulsed Diode Forward Current I SM S p n junction diode 323 Diode Forward Voltage V SD T J = 25 C, I S = 45 A, V GS = V.9.2 V Reverse Recovery Time t rr ns Reverse Recovery Charge Q rr T J = 25 C, I F = I S = 45 A, di/dt = A/μs, V R = 25 V μc Reverse Recovery Current I RRM 42 A Notes a. C oss(er) is a fixed capacitance that gives the same energy as C oss while is rising from % to 8 %. b. C oss(tr) is a fixed capacitance that gives the same charging time as C oss while is rising from % to 8 %. A S6232Rev. A, 5Feb6 2 Document Number: 9585 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

3 SiHS9N65E TYPICAL CHARACTERISTICS (25 C, unless otherwise noted) I D, DraintoSource Current (A) TOP 5 V 4 V 3 V 2 V V V 9 V 8 V 7 V 6 V BOTTOM 5 V T J = 25 C R DS(on), DraintoSource OnResistance (Normalized) I D = 45 A V GS = V 5 5 2, DraintoSource Voltage (V) Fig. Typical Output Characteristics T J, Junction Temperature ( C) Fig. 4 Normalized OnResistance vs. Temperature I D, DraintoSource Current (A) TOP 5 V 4 V 3 V 2 V V V 9 V 8 V 7 V 6 V BOTTOM 5 V T J = 5 C C, Capacitance (pf) C iss C oss C rss V GS = V, f = 3 khz C iss = C gs C gd, C ds shorted C rss = C gd C oss = C ds C gd 5 5 2, DraintoSource Voltage (V) Fig. 2 Typical Output Characteristics , DraintoSource Voltage (V) Fig. 5 Typical Capacitance vs. DraintoSource Voltage 35 7 I D, DraintoSource Current (A) T J = 25 C T J = 5 C C oss (pf) 5 5 C oss E oss E oss (μj) = 4.6 V V GS, GatetoSource Voltage (V) Fig. 3 Typical Transfer Characteristics Fig. 6 C OSS and E OSS vs. S6232Rev. A, 5Feb6 3 Document Number: 9585 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

4 SiHS9N65E V GS, GatetoSource Voltage (V) = 52 V = 325 V = 3 V I D, Drain Current (A) Q g, Total Gate Charge (nc) T C, Case Temperature ( C) Fig. 7 Typical Gate Charge vs. GatetoSource Voltage Fig. Maximum Drain Current vs. Case Temperature 85 I SD, Reverse Drain Current (A) T J = 5 C T J = 25 C V GS = V V SD, SourceDrain Voltage (V), DraintoSource Breakdown Voltage (V) I D = 25 μa T J, Junction Temperature ( C) Fig. 8 Typical SourceDrain Diode Forward Voltage Fig. Temperature vs. DraintoSource Voltage Operation in this Area Limited by R DS(on) I DM Limited I D, Drain Current (A). Limited by R DS(on) * T C = 25 C T J = 5 C Single Pulse BVDSS Limited, DraintoSource Voltage (V) * V GS > minimum V GS at which R DS(on) is specified Fig. 9 Maximum Safe Operating Area μs ms ms S6232Rev. A, 5Feb6 4 Document Number: 9585 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

5 SiHS9N65E Duty Cycle =.5 Normalized Effective Transient Thermal Impedance Single Pulse..... Pulse Time (s) Fig. 2 Normalized Thermal Transient Impedance, JunctiontoCase R D t p V GS R G V Pulse width μs Duty factor. % I AS Fig. 3 Switching Time Test Circuit Fig. 6 Unclamped Inductive Waveforms 9 % V Q G Q GS Q GD % V GS t d(on) t r t d(off) t f V G Charge Fig. 4 Switching Time Waveforms Fig. 7 Basic Gate Charge Waveform Vary t p to obtain required I AS L Current regulator Same type as 5 kω R G V t p I AS. Ω 2 V V GS.2 μf.3 μf V DS 3 ma Fig. 5 Unclamped Inductive Test Circuit Fig. 8 Gate Charge Test Circuit I G I D Current sampling resistors S6232Rev. A, 5Feb6 5 Document Number: 9585 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

6 SiHS9N65E Peak Diode Recovery dv/dt Test Circuit Circuit layout considerations Low stray inductance Ground plane Low leakage inductance current transformer R g dv/dt controlled by R g Driver same type as I SD controlled by duty factor D device under test Driver gate drive P.W. Period D = P.W. Period V GS = V a l SD waveform Reverse recovery current Body diode forward current di/dt waveform Diode recovery dv/dt Reapplied voltage Inductor current Body diode forward drop Ripple 5 % I SD Note a. V GS = 5 V for logic level devices Fig. 9 For NChannel maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see S6232Rev. A, 5Feb6 6 Document Number: 9585 ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT

7 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, noninfringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer s technical experts. Product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, lifesaving, or lifesustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. 27 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 8Feb7 Document Number: 9

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