P-Channel 2.5-V (G-S) MOSFET
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1 New Product SiL P-Channel.-V (G-S) MOSFET PROUCT SUMMARY V S (V) r S(on) (Ω) I 8 at V GS = -. V ±. -. at V GS = -.6 V ±..6 at V GS = -. V ±. FEATURES TrenchFET Power MOSFET Pb-free Available RoHS* COMPLIANT SOT-6 SC-7 (6-LEAS) 6 Marking Code OA XX YY Lot Traceability and ate Code G S Part # Code Top View Ordering Information: SiL-T SiL-T-E (Lead (Pb)-free) ABSOLUTE MAXIMUM RATINGS T A = C, unless otherwise noted Parameter Symbol Sec Steady State Unit rain-source Voltage V S - V Gate-Source Voltage V GS ± T Continuous rain Current (T J = C) A = C ±. ±. I T A = 8 C ±. ±. A Pulsed rain Current I M ± Continuous iode Current (iode Conduction) a I S Maximum Power issipation a T A = C.6.68 P W T A = 8 C..9 Operating Junction and Storage Temperature Range T J, T stg - to C THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambient a t sec 6 R thja Steady State 8 C/W Maximum Junction-to-Foot (rain) Steady State R thjf a. Surface mounted on " x " FR board. * Pb containing terminations are not RoHS compliant, exemptions may apply. ocument Number: 77 S-66Rev. C, -Mar-6
2 SiL New Product SPECIFICATIONS T J = C, unless otherwise noted Parameter Symbol Test Condition Min Typ Max Unit Static Gate Threshold Voltage V GS(th) V S = V GS, I = - µa V Gate-Body Leakage I GSS V S = V, V GS = ± V ± na V S = - V, V GS = V - Zero Gate Voltage rain Current I SS V S = - V, V GS = V, T J = 8 C - µa On-State rain Current a I (on) V S = - V, V GS = -. V - A rain-source On-State Resistance a r S(on) V GS = -.6 V, I = -. A 6. Ω V GS = -. V, I = -. A 8 V GS = -. V, I = -.8 A..6 Forward Transconductance a g fs V GS = - V, I = -. A.8 S iode Forward Voltage a V S I S = -.8, V GS = V V ynamic b Total Gate Charge Q g.7. Gate-Source Charge Q gs V S = - V, V GS = -. V, I = -. A.9 nc Gate-rain Charge Q gd.9 Turn-On elay Time t d(on) 8 Rise Time t r V = - V, R L = Ω Turn-Off elaytime t d(off) I - A, V GEN = -. V, R G = 6 Ω ns Fall Time t f Source-rain Reverse Recovery Time t rr I F = -.8 A, di/dt = A/µs a. Pulse test; pulse width µs, duty cycle %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICAL CHARACTERISTICS T A = C, unless noted.. V GS = thru. V.. T C = - C C rain Current..6 V rain Current..6 C I.8 I.8,. V V S rain-to-source Voltage (V) Output Characteristics V GS Gate-to-Source Voltage (V) Transfer Characteristics ocument Number: 77 S-66Rev. C, -Mar-6
3 New Product SiL TYPICAL CHARACTERISTICS T A = C, unless noted. 6 r S(on ) V GS =. V V GS =.6 V V GS =. V Capacitance (pf) C C iss C oss I rain Current On-Resistance vs. rain Current C rss 8 6 V S rain-to-source Voltage (V) Capacitance.6 Gate-to-Source Voltage (V) V G S V S = V I =. A (Normalized) r S(on )....8 V GS =. V I =. A Q g Total Gate Charge (nc) Gate Charge T J Junction Temperature ( C) On-Resistance vs. Junction Temperature. Source Current T J = C... I =.8 A I =. A I S T J = C r S(on ) V S Source-to-rain Voltage (V) Capacitance VGS Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage ocument Number: 77 S-66Rev. C, -Mar-6
4 SiL New Product TYPICAL CHARACTERISTICS T A = C, unless noted.. I = µa 8 Variance (V) V GS(th ).. (W) Power T J Temperature ( C) Threshold Voltage Time (sec) Single Pulse Power, Junction-to-Ambient Normalized Effective Transient Thermal Impedance uty Cycle =.. P M. t t t.. uty Cycle, = t. Per Unit Base = R thja = 8 C/W. T JM T A = P M Z (t) thja Single Pulse. Surface Mounted. 6 Square Wave Pulse uration (sec) Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance uty Cycle =..... Single Pulse Square Wave Pulse uration (sec) Normalized Thermal Transient Impedance, Junction-to-Foot maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see ocument Number: 77 S-66Rev. C, -Mar-6
5 Legal isclaimer Notice Vishay isclaimer All product specifications and data are subject to change without notice. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any information provided herein to the maximum extent permitted by law. The product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein, which apply to these products. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. Product names and markings noted herein may be trademarks of their respective owners. ocument Number: 9 Revision: 8-Jul-8
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