Dual N-Channel 30 V (D-S) MOSFET

Transcription

1 Si59BDC Dual N-Channel V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) Q g (Typ.) 6-8 ChipFET (Dual).65 at V GS = V a nc. at V GS =.5 V a S FEATURES Halogen-free According to IEC 69-- Definition TrenchFET Power MOSFET Compliant to RoHS Directive /95/EC APPLICATIONS Load Switch for Portable Applications DC/DC Converter D D D G D D D S G Marking Code CE XXX Lot Traceability and Date Code G G Bottom View Part # Code S S Ordering Information: Si59BDC-T-E (Lead (Pb)-free) Si59BDC-T-GE (Lead (Pb)-free and Halogen-free) N-Channel MOSFET N-Channel MOSFET ABSOLUTE MAXIMUM RATINGS T A = 5 C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage V DS V Gate-Source Voltage V GS ± T C = 5 C a T Continuous Drain Current (T J = 5 C) C = 85 C I.8 a D T A = 5 C.7 b, c T A = 85 C.6 b, c A Pulsed Drain Current I DM T Continuous Source-Drain Diode Current C = 5 C.6 I S T A = 5 C. b, c T C = 5 C. T Maximum Power Dissipation C = 85 C. P D W T A = 5 C.5 b, c T A = 85 C.8 b, c Operating Junction and Storage Temperature Range T J, T stg - 55 to 5 C Soldering Recommendations (Peak Temperature) d, e 6 THERMAL RESISTANCE RATINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-Ambient b, f t 5 s R thja 7 85 C/W Maximum Junction-to-Foot (Drain) Steady State R thjf Notes: a. Package limited. b. Surface mounted on " x " FR board. c. t = 5 s. d. See Solder Profile (/ppg?757). The 6-8 ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions is C/W. Document Number: 75 S-58-Rev. B, 8-Mar-

2 Si59BDC SPECIFICATIONS T J = 5 C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage V DS V GS = V, I D = 5 µa V V DS Temperature Coefficient ΔV DS /T J 7 I D = 5 µa V GS(th) Temperature Coefficient ΔV GS(th) /T J - 5 mv/ C Gate-Source Threshold Voltage V GS(th) V DS = V GS, I D = 5 µa.5 V Gate-Source Leakage I GSS V DS = V, V GS = ± V ± na V DS = V, V GS = V Zero Gate Voltage Drain Current I DSS V DS = V, V GS = V, T J = 85 C 5 µa On-State Drain Current a I D(on) V DS 5 V, V GS = V A V GS = V, I D =. A Drain-Source On-State Resistance a.5.65 R DS(on) V GS =.5 V, I D = A.8. Ω Forward Transconductance a g fs V DS = 5 V, I D =. A 5 S Dynamic b Input Capacitance C iss V DS = 5 V, V GS = V, f = MHz Output Capacitance C oss 5 Reverse Transfer Capacitance C rss 5 V DS = 5 V, V GS = V, I D =.6 A.5 7 Total Gate Charge Q g nc Gate-Source Charge Q gs V DS = 5 V, V GS =.5 V, I D =.6 A.7 Gate-Drain Charge Q gd.7 Gate Resistance R g f = MHz Ω Turn-On Delay Time t d(on) 5 5 Rise Time t r V DD = 5 V, R L = 5.8 Ω 8 Turn-Off Delay Time t d(off) I D.6 A, V GEN =.5 V, R g = Ω Fall Time t f 5 Turn-On Delay Time t d(on) 8 ns Rise Time t r V DD = 5 V, R L = 5.8 Ω Turn-Off Delay Time t d(off) I D.6 A, V GEN = V, R g = Ω 5 Fall Time t f 5 Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I S T C = 5 C.6 Pulse Diode Forward Current I SM A Body Diode Voltage V SD I S =.6 A, V GS = V.8. V Body Diode Reverse Recovery Time t rr 5 ns Body Diode Reverse Recovery Charge Q rr nc I F =.6 A, di/dt = A/µs, T J = 5 C Reverse Recovery Fall Time t a ns Reverse Recovery Rise Time t b 7 Notes: a. Pulse test; pulse width µs, duty cycle %. b. Guaranteed by design, not subject to production testing. Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. pf Document Number: 75 S-58-Rev. B, 8-Mar-

3 Si59BDC TYPICAL CHARACTERISTICS 5 C, unless otherwise noted 5 6 V GS = V thru 6 V 5 V - Drain Current (A) I D 8 V - Drain Current (A) I D T C = 5 C T C = 5 C V V DS - Drain-to-Source Voltage (V) Output Characteristics T C = - 55 C V GS - Gate-to-Source Voltage (V) Transfer Characteristics. - On-Resistance (Ω) R DS(on) V GS =.5 V V GS = V C - Capacitance (pf) C oss C iss. 5 5 I D - Drain Current (A) On Resistance vs. Drain Current C rss V DS - Drain-to-Source Voltage (V) Capacitance - Gate-to-Source Voltage (V) V GS 8 6 V DS = 5 V, I D =.6 A V DS = V, I D =.6 A R DS(on) - On-Resistance (Normalized) V GS = V,.5 V I D =. A 5 Q g - Total Gate Charge (nc) Gate Charge T J - Junction Temperature ( C) On-Resistance vs. Junction Temperature Document Number: 75 S-58-Rev. B, 8-Mar-

4 Si59BDC TYPICAL CHARACTERISTICS 5 C, unless otherwise noted. I D =. A - Source Current (A) I S T J = 5 C T J = 5 C - On-Resistance (Ω) R DS(on) C 5 C V SD - Source-to-Drain Voltage (V) Forward Diode Voltage vs. Temperature. 6 8 V GS - Gate-to-Source Voltage (V) R DS(on) vs. V GS vs. Temperature 5. I D = 5 µa. (V) V GS(th).8.6 Power (W) T J - Temperature ( C) Threshold Voltage Time (s) Single Pulse Power Limited by R * DS(on) µs I D - Drain Current (A)... T A = 5 C Single Pulse. BVDSS Limited ms s, s DC Safe Operating Area, Junction-to-Ambient ms ms V DS - Drain-to-Source Voltage (V) * V GS minimum V GS at which R DS(on) is specified Document Number: 75 S-58-Rev. B, 8-Mar-

5 Si59BDC TYPICAL CHARACTERISTICS 5 C, unless otherwise noted 6 5 I D - Drain Current (A) Package Limited Power Dissipation (W) T C - Case Temperature ( C) Current Derating* T C - Case Temperature ( C) Power Derating * The power dissipation P D is based on T J(max) = 5 C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. Document Number: 75 S-58-Rev. B, 8-Mar- 5

6 Si59BDC TYPICAL CHARACTERISTICS 5 C, unless otherwise noted Normalized Effective Transient Thermal Impedance t Duty Cycle =.5.. Notes: P DM..5. t t. Duty Cycle, D = t. Per Unit Base = R thja = C/W. T JM - T A = P DM Z (t) thja Single Pulse. Surface Mounted Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Ambient Normalized Effective Transient Thermal Impedance. Duty Cycle = Single Pulse Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see /ppg?75. 6 Document Number: 75 S-58-Rev. B, 8-Mar-

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