P-Channel 20 V (D-S) MOSFET with Schottky Diode

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1 P-Channel V (D-S) MOSFET with Schottky Diode Si5855CDC MOSFET PRODUCT SUMMRY V DS (V) R DS(on) (Ω) I D () a Q g (Typ.) -. at V GS = -.5 V at V GS = -.5 V at V GS = -.8 V - 3. SCHOTTKY PRODUCT SUMMRY V K (V) V f (V) Diode Forward Voltage. nc I F () a.375 at FETURES Halogen-free ccording to IEC 69-- Definition LITTLE FOOT Plus Power MOSFET Ultra Low V F Schottky Compliant to RoHS Directive /95/EC PPLICTIONS Charging Switch for Portable Devices - With Integrated Low V F Trench Schottky Diode 6-8 ChipFET S K K K D D Bottom View S G Marking Code JG XXX Lot Traceability and Date Code Part # Code Ordering Information: Si5855CDC-T-E3 (Lead (Pb)-free) Si5855CDC-T-GE3 (Lead (Pb)-free and Halogen-free) G D P-Channel MOSFET BSOLUTE MXIMUM RTINGS T = 5 C, unless otherwise noted Parameter Symbol Limit Unit Drain-Source Voltage (MOSFET) V DS - Reverse Voltage (Schottky) V K V Gate-Source Voltage (MOSFET) V GS ± 8 T C = 5 C a Continuous Drain Current (T J = 5 C) (MOSFET) T C = 7 C - 3. I D T = 5 C -.5 b, c T = 7 C -. b, c Pulsed Drain Current (MOSFET) I DM - Continuous Source Current (MOSFET Diode Conduction) T C = 5 C -.3 I a S T = 5 C -. b, c verage Forward Current (Schottky) I F Pulsed Forward Current (Schottky) I FM 7 T C = 5 C.8 Maximum Power Dissipation (MOSFET) Maximum Power Dissipation (Schottky) T C = 7 C.8 W T = 5 C.3 b, c T = 7 C.8 P b, c D T C = 5 C 3. T C = 7 C. T = 5 C.9 T = 7 C. Operating Junction and Storage Temperature Range T J, T stg - 55 to 5 Soldering Recommendation (Peak Temperature) d, e 6 W C Document Number: 689 S-58-Rev. B, 8-Mar-

2 THERML RESISTNCE RTINGS Parameter Symbol Typical Maximum Unit Maximum Junction-to-mbient (MOSFET) b, c, f R thj 8 99 Maximum Junction-to-Foot (Drain) (MOSFET) R thjf 35 5 Maximum Junction-to-mbient (Schottky) b, c, g R thj 5 65 C/W Maximum Junction-to-Foot (Drain) (Schottky) R thjf 3 Notes: a. Based on T C = 5 C. b. Surface mounted on FR board. c. t 5 s. d. See Solder Profile (/doc?7357). The PowerPK ChipFET is a leadless package. The end of the lead terminal is exposed copper (not plated) as a result of the singulation process in manufacturing. solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection. e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components. f. Maximum under steady state conditions for MOSFETs is 3 C/W. g. Maximum under steady state conditions for Schottky is 5 C/W. SPECIFICTIONS T J = 5 C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Static Drain-Source Breakdown Voltage V DS V GS = V, I D = - 5 µ - V V DS Temperature Coefficient ΔV DS/TJ - 9 I D = - 5 µ V GS(th) Temperature Coefficient ΔV GS(th)/TJ mv/ C Gate-Source Threshold Voltage V GS(th) V DS = V GS, I D = - 5 µ V Gate-Body Leakage I GSS V DS = V, V GS = ± 8 V ± ns V DS = - V, V GS = V - Zero Gate Voltage Drain Current I DSS V DS = - V, V GS = V, T J = 55 C - µ On-State Drain Current a I D(on) V DS - 5 V, V GS = -.5 V - V GS = -.5 V, I D = Drain-Source On-State Resistance a R DS(on) V GS = -.5 V, I D = Ω V GS = -.8 V, I D = Forward Transconductance a g fs V DS = - V, I D = S Dynamic b Input Capacitance C iss V DS = - V, V GS = V, f = MHz 76 Output Capacitance C oss 6 Reverse Transfer Capacitance C rss 3 V DS = - V, V GS = - 5 V, I D = Total Gate Charge Q g. 6. nc Gate-Source Charge Q gs V DS = - V, V GS = -.5 V, I D = Gate-Drain Charge Q gd. Gate Resistance R g f = MHz. 5.5 Ω Turn-On Delay Time t d(on) 7 Rise Time t r V DD = - V, R L = 5 Ω 3 5 Turn-Off Delay Time t d(off) I D -, V GEN = -.5 V, R g = Ω 33 Fall Time t f 8 6 Turn-On Delay Time t d(on) 5 ns Rise Time t r V DD = - V, R L = 5 Ω Turn-Off Delay Time t d(off) I D -, V GEN = - 5 V, R g = Ω 7 6 Fall Time t f 8 6 pf Document Number: 689 S-58-Rev. B, 8-Mar-

3 SPECIFICTIONS T J = 5 C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current I S T C = 5 C -.3 Pulse Diode Forward Current I SM - Body Diode Voltage V SD I S = -, V GS = V V Body Diode Reverse Recovery Time t rr 3 35 ns Body Diode Reverse Recovery Charge Q rr 3 nc I F = - di/dt = /µs T J = 5 C Reverse Recovery Fall Time t a ns Reverse Recovery Rise Time t b 3 Notes: a. Pulse test; pulse width 3 µs, duty cycle %. b. Guaranteed by design, not subject to production testing. SCHOTTKY SPECIFICTIONS T J = 5 C, unless otherwise noted Parameter Symbol Test Conditions Min. Typ. Max. Unit I F = Forward Voltage Drop V F V I F =, T J = 5 C.55.9 Maximum Reverse Leakage Current I rm V r = V, T J = 85 C m V r = V.5.5 V r = V, T J = 5 C Junction Capacitance C T V r = V 9 pf Stresses beyond those listed under bsolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. TYPICL CHRCTERISTICS 5 C, unless otherwise noted. V GS =5V thru.5 V I D - Drain Current () 8 V GS =V 6 V GS =.5V V GS =V 3 5 I D - Drain Current ().5. T C = 5 C.5 T C = 5 C T C = - 55 C V DS - Drain-to-Source Voltage (V) V GS - Gate-to-Source Voltage (V) Output Characteristics Transfer Characteristics Document Number: 689 S-58-Rev. B, 8-Mar- 3

4 TYPICL CHRCTERISTICS 5 C, unless otherwise noted On-Resistance (Ω) R DS(on) V GS =-.8V V GS = -.5 V V GS = -.5 V C - Capacitance (pf) C oss C iss. 6 8 I D - Drain Current () On Resistance vs. Drain Current 5 C rss 8 6 V DS - Drain-to-Source Voltage (V) Capacitance.5 I D =.5 - Gate-to-Source Voltage (V) V GS 3 V DS =V V DS =6V R DS(on) - On-Resistance (Normalized).3..9 V GS =.5V;I D = Q g - Total Gate Charge (nc) Gate Charge V GS =.5V;I D = T J - Junction Temperature ( C) On-Resistance vs. Junction Temperature.5 I D =.5 - Source Current () I S T J = 5 C T J = 5 C - On-Resistance (Ω) R DS(on) T J = 5 C T J = 5 C V SD -Source-to-Drain Voltage (V) Forward Diode Voltage vs. Temp V GS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage Document Number: 689 S-58-Rev. B, 8-Mar-

5 TYPICL CHRCTERISTICS 5 C, unless otherwise noted I D = 5 µ (V) V GS(th).5. Power (W) T J - Temperature ( C) Threshold Voltage Time (s) Single Pulse Power Limited by R DS(on) * - Drain Current () I D. T = 5 C Single Pulse BVDSS Limited µs ms ms ms s,s DC.. V DS - Drain-to-Source Voltage (V) * V GS > minimum V GS at which R DS(on) is specified Safe Operating rea, Junction-to-mbient Document Number: 689 S-58-Rev. B, 8-Mar- 5

6 TYPICL CHRCTERISTICS 5 C, unless otherwise noted 5 I D - Drain Current () T C - Case Temperature ( C) Current Derating*. 3.9 Power (W) Power (W) T C - Case Temperature ( C) T -mbient Temperature ( C) Power, Junction-to-Foot Power, Junction-to-mbient * The power dissipation P D is based on T J(max) = 5 C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. 6 Document Number: 689 S-58-Rev. B, 8-Mar-

7 TYPICL CHRCTERISTICS 5 C, unless otherwise noted Duty Cycle =.5 Normalized Effective Transient Thermal Impedance Single Pulse. Surface Mounted Notes: Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-mbient P DM t t t. Duty Cycle, D = t. Per Unit Base = R thj = C/W 3. T JM -T =P DM Z (t) thj Duty Cycle =.5 Normalized Effective Transient Thermal Impedance.... Single Pulse Square WavePulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot SCHOTTKY TYPICL CHRCTERISTICS 5 C, unless otherwise noted I R - Reverse Current (m).. V V - Forward Current () I F T J = 5 C T J = 5 C T J - Junction Temperature ( C) Reverse Current vs. Junction Temperature V F - Forward Voltage Drop (V) Forward Voltage Drop Document Number: 689 S-58-Rev. B, 8-Mar- 7

8 SCHOTTKY TYPICL CHRCTERISTICS 5 C, unless otherwise noted 6 - Junction Capacitance (pf) 5 3 C T 8 6 V K - Reverse Voltage (V) Capacitance Normalized Effective Transient Thermal Impedance.. - Duty Cycle = Single Pulse t t t. Duty Cycle, D = t. Per Unit Base = R thj = 95 C/W 3. T JM - T = P DM Z (t) thj Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-mbient Notes: P DM. Surface Mounted Normalized Effective Transient Thermal Impedance. Duty Cycle = Single Pulse Square Wave Pulse Duration (s) Normalized Thermal Transient Impedance, Junction-to-Foot - maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see /ppg? Document Number: 689 S-58-Rev. B, 8-Mar-

9 Package Information 6-8 ChipFET D L E E 3 3 S e b c x Backside View X./.3 R C DETIL X NOTES:. ll dimensions are in millimeaters.. Mold gate burrs shall not exceed.3 mm per side. 3. Leadframe to molded body offset is horizontal and vertical shall not exceed.8 mm.. Dimensions exclusive of mold gate burrs. 5. No mold flash allowed on the top and bottom lead surface. MILLIMETERS INCHES Dim Min Nom Max Min Nom Max b c c.38.5 D E E e.65 BSC.56 BSC L S.55 BSC. BSC 5 Nom ECN: C-358 Rev. F, 9-Jan- DWG: Nom Document Number: 75 5-Jan-

10 pplication Note 86 RECOMMENDED MINIMUM PDS FOR 6-8 ChipFET.93 (.357) PPLICTION NOTE. (.559).8 (.3).36 (.9).6 (.65).6 (.6). (.) Recommended Minimum Pads Dimensions in Inches/(mm) Return to Index Return to Index Document Number: 7593 Revision: -Jan-8

11 Legal Disclaimer Notice Vishay Disclaimer LL PRODUCT, PRODUCT SPECIFICTIONS ND DT RE SUBJECT TO CHNGE WITHOUT NOTICE TO IMPROVE RELIBILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. ll operating parameters, including typical parameters, must be validated for each customer application by the customer s technical experts. Product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. 7 VISHY INTERTECHNOLOGY, INC. LL RIGHTS RESERVED Revision: 8-Feb-7 Document Number: 9

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