N-Channel 30 V (D-S) MOSFET
|
|
- Warren Chambers
- 5 years ago
- Views:
Transcription
1 N-Channel 3 V (-S) MOSFET 3.3 mm mm Top View PROUCT SUMMARY PowerPAK -8S 3.3 mm 3 4 S G Bottom View V S (V) 3 R S(on) max. () at V GS = V.48 R S(on) max. () at V GS = 4.5 V.6 Q g typ. (nc) 4 I (A) 5 a Configuration Single S S FEATURES TrenchFET power MOSFET % R g and UIS tested Thin.75 mm height Typical ES performance 5 V Material categorization: for definitions of compliance please see APPLICATIONS C/C converter Battery switch Power management For mobile computing G S N-Channel MOSFET ORERING INFORMATION Package PowerPAK -8S Lead (Pb)-free and halogen-free -T-GE3 ABSOLUTE MAXIMUM RATINGS (T A = 5 C, unless otherwise noted) PARAMETER SYMBOL LIMIT UNIT rain-source voltage V S 3 V Gate-source voltage V GS ± T C = 5 C 5 a T C = 7 C 5 a Continuous drain current (T J = 5 C) I T A = 5 C.4 b, c A T A = 7 C 6.3 b, c Pulsed drain current (t = μs) I M Avalanche current I AS 5 L =. mh Avalanche energy E AS 3 mj T C = 5 C 43.3 Continuous source-drain diode current I S A T A = 5 C 3. b, c T C = 5 C 5 T C = 7 C 33 Maximum power dissipation P W T A = 5 C 3.8 b, c T A = 7 C b, c Operating junction and storage temperature range T J, T stg -55 to +5 C Soldering recommendations (peak temperature) d, e 6 THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYPICAL MAXIMUM UNIT Maximum junction-to-ambient b, f t s R thja 4 33 Maximum junction-to-case (drain) Steady state R thjc.9.4 C/W Notes a. Package limited b. Surface mounted on " x " FR4 board c. t = s d. See solder profile ( The Thin PowerPAK -8S is a leadless package. The end of the lead terminal is exposedcopper (not plated) as a result of the singulation process in manufacturing. A solder fillet at the exposed copper tip cannot be guaranteed and is not required to ensure adequate bottom side solder interconnection e. Rework conditions: manual soldering with a soldering iron is not recommended for leadless components f. Maximum under steady state conditions is 8 C/W S7-45-Rev. C, 8-Sep-7 ocument Number: 6867 ARE SUBJECT TO SPECIFIC ISCLAIMERS, SET FORTH AT
2 SPECIFICATIONS (T J = 5 C, unless otherwise noted) PARAMETER SYMBOL TEST CONITIONS MIN. TYP. MAX. UNIT Static rain-source breakdown voltage V S V GS = V, I = 5 μa V V S temperature coefficient V S /T J I = 5 μa V GS(th) temperature coefficient V GS(th) /T J mv/ C Gate-source threshold voltage V GS(th) V S = V GS, I = 5 μa -.5 V V S = V, V GS = ± V - - ± Gate-source leakage I GSS V S = V, V GS = ± V - - ± V S = 3 V, V GS = V - - Zero gate voltage drain current I SS V S = 3 V, V GS = V, T J = 55 C μa On-state drain current a I (on) V S 5 V, V GS = V - - A rain-source on-state resistance a V GS = V, I = A R S(on) V GS = 4.5 V, I = 8 A Forward transconductance a g fs V S = 5 V, I = A S ynamic b Input capacitance C iss Output capacitance C oss V S = 5 V, V GS = V, f = MHz pf Reverse transfer capacitance C rss V S = 5 V, V GS = V, I = A Total gate charge Q g - 4 nc Gate-source charge Q gs V S = V, V GS = 4.5 V, I = A Gate-drain charge Q gd Gate resistance R g f = MHz...4 Turn-on delay time t d(on) - 3 Rise time t r V = 5 V, R L = Turn-off delay time t d(off) I A, V GEN = 4.5 V, R g = Fall time t f - Turn-on delay time t d(on) - ns Rise time t r V = 5 V, R L = Turn-off delay time t d(off) I A, V GEN = V, R g = Fall time t f rain-source Body iode Characteristics Continuous source-drain diode current I S T C = 5 C Pulse diode forward current (t = μs) I SM - - A Body diode voltage V S I S = A, V GS = V -.8. V Body diode reverse recovery time t rr - 4 ns Body diode reverse recovery charge Q rr - nc I F = A, di/dt = A/μs, T J = 5 C Reverse recovery fall time t a ns Reverse recovery rise time t b - - Notes a. Pulse test: pulse width 3 μs, duty cycle % b. Guaranteed by design, not subject to production testing Stresses beyond those listed under Absolute Maximum Ratings may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. S7-45-Rev. C, 8-Sep-7 ocument Number: 6867 ARE SUBJECT TO SPECIFIC ISCLAIMERS, SET FORTH AT
3 TYPICAL CHARACTERISTICS (5 C, unless otherwise noted) I GSS - Gate Current (ma) T J = 5 C I GSS - Gate Current (A) T J = 5 C T J = 5 C V GS - Gate-Source Voltage (V) Gate Source Voltage vs. Gate Current V GS - Gate-to-Source Voltage (V) Gate Source Voltage vs. Gate Current 5 V GS = V thru 4 V 4 V GS = 3 V T C = 5 C T C = 5 C.5.5 V S - rain-to-source Voltage (V) Output Characteristics T C = -55 C V GS - Gate-to-Source Voltage (V) Transfer Characteristics.75 R S(on) - On-Resistance (Ω) V GS = 4.5 V V GS = V C - Capacitance (pf) C iss C oss On-Resistance vs. rain Current C rss V S - rain-to-source Voltage (V) Capacitance S7-45-Rev. C, 8-Sep-7 3 ocument Number: 6867 ARE SUBJECT TO SPECIFIC ISCLAIMERS, SET FORTH AT
4 TYPICAL CHARACTERISTICS (5 C, unless otherwise noted) I = A V S = 8 V I = A V GS = V V GS - Gate-to-Source Voltage (V) V S = 5 V V S = 4 V R S(on) - On-Resistance (Normalized) V GS = 4.5 V Q g - Total Gate Charge (nc) Gate Charge T J - Junction Temperature ( C) On-Resistance vs. Junction Temperature 5 4 I S - Source Current (A) T J = 5 C T J = 5 C Power (W) V S - Source-to-rain Voltage (V) Time (s) Source-rain iode Forward Voltage Single Pulse Power (Junction-to-Ambient) I = 5 μa. I = A V GS(th) (V) R S(on) - On-Resistance (Ω) T J = 5 C T J = 5 C T J - Temperature ( C) Threshold Voltage V GS - Gate-to-Source Voltage (V) On-Resistance vs. Gate-to-Source Voltage S7-45-Rev. C, 8-Sep-7 4 ocument Number: 6867 ARE SUBJECT TO SPECIFIC ISCLAIMERS, SET FORTH AT
5 TYPICAL CHARACTERISTICS (5 C, unless otherwise noted) Limited by R S(on) () μs. ms ms ms s, s C,. T A = 5 C Single pulse BVSS limited.. V S - rain-to-source Voltage (V) () V GS > minimum V GS at which R S(on) is specified Safe Operating Area, Junction-to-Ambient Power (W) T C - Case Temperature ( C) Power Junction-to-Case T C - Case Temperature ( C) Current erating a Note a. The power dissipation P is based on T J max. = 5 C, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit S7-45-Rev. C, 8-Sep-7 5 ocument Number: 6867 ARE SUBJECT TO SPECIFIC ISCLAIMERS, SET FORTH AT
6 TYPICAL CHARACTERISTICS (5 C, unless otherwise noted) Normalized Effective Transient Thermal Impedance. uty cycle = Single pulse 3. T JM - T A = P M Z (t) thja 4. Surface mounted Square Wave Pulse uration (s) Notes: Normalized Thermal Transient Impedance, Junction-to-Ambient P M t t t. uty cycle, = t. Per unit base = R thja = 8 C/W Normalized Effective Transient Thermal Impedance. uty cycle =.5.. Single pulse Square Wave Pulse uration (s) Normalized Thermal Transient Impedance, Junction-to-Case maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package / tape drawings, part marking, and reliability data, see S7-45-Rev. C, 8-Sep-7 6 ocument Number: 6867 ARE SUBJECT TO SPECIFIC ISCLAIMERS, SET FORTH AT
7 Package Information PowerPAK -8T MILLIMETERS INCHES IM. MIN. NOM. MAX. MIN. NOM. MAX. A A b c TYP..85 TYP. 5.3 TYP..9 TYP. E E E E E4.34 TYP..3 TYP. e.65 BSC.6 BSC K.86 TYP..34 TYP. K H L L W M.5 TYP..5 TYP. ECN: T3-56-Rev. A, 8-Feb-3 WG: 6 Revison: 8-Feb-3 ocument Number: 6836 ARE SUBJECT TO SPECIFIC ISCLAIMERS, SET FORTH AT
8 Legal isclaimer Notice Vishay isclaimer ALL PROUCT, PROUCT SPECIFICATIONS AN ATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR ESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer s technical experts. Product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. 7 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVE Revision: 8-Feb-7 ocument Number: 9
P-Channel 20 V (D-S) MOSFET
P-Channel 2 V (-S) MOSFET SiS45NT 3.3 mm mm Top View PowerPAK 22-8S 3.3 mm 3 4 S G Bottom View PROUCT SUMMARY V S (V) -2 R S(on) max. () at V GS = - V.4 R S(on) max. () at V GS = -4.5 V.55 R S(on) max.
More informationN-Channel 250 V (D-S) MOSFET
N-Channel 25 V (-S) MOSFET 3.3 mm mm Top View PowerPAK 22-8S 3.3 mm 3 4 S G Bottom View PROUCT SUMMARY V S (V) 25 R S(on) max. ( ) at V GS = V.73 R S(on) max. ( ) at V GS = 7.5 V.9 Q g typ. (nc) 8. I (A)
More informationN-Channel 25 V (D-S) MOSFET
N-Channel 25 V (-S) MOSFET SiRA32P 6.5 mm Top View PROUCT SUMMARY PowerPAK SO-8 Single 8 5.5 mm 4 G Bottom View V S (V) 25 R S(on) max. () at V GS = V.2 R S(on) max. () at V GS = 4.5 V.83 Q g typ. (nc)
More informationN-Channel 30 V (D-S) MOSFET
N-Channel 3 V (-S) MOSFET SiSH4N 3.3 mm Top View PowerPAK -8SH 3.3 mm.9 mm 5 6 7 8 4 G Bottom View 3 S S S FEATURES TrenchFET power MOSFET % R g and UIS tested Material categorization: for definitions
More informationN-Channel 25 V (D-S) MOSFET
N-Channel 25 V (-S) MOSFET 2.5 mm Top View Marking code: A5 PowerPAK SC-7-6L Single 2.5 mm S 4 S 7 5 6 2 3 G Bottom View FEATURES TrenchFET Gen IV power MOSFET Optimized Q g, Q gd, and Q gd /Q gs ratio
More informationP-Channel 20 V (D-S) MOSFET
P-Channel 2 V (-S) MOSFET 6 Marking code: BQ TSOP-6 Single S 4 5 Top View PROUCT SUMMARY V S (V) -2 R S(on) max. ( ) at V GS = -4.5 V.24 R S(on) max. ( ) at V GS = -2.5 V.32 R S(on) max. ( ) at V GS =
More informationN-Channel 30 V (D-S) MOSFET
N-Channel 3 V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) () I (A) b, c Q g (TYP.) 3.2 at V GS = V..24 at V GS = 4.5 V 9.2 PowerPAK SC-7-6L Single S 4 5 S 6 5.6 FEATURES TrenchFET power MOSFET Thermally
More informationP-Channel 20 V (D-S) MOSFET
Si7655AN P-Channel 2 V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) Max. I (A) Q g (Typ.).36 at V GS = - V - e - 2.8 at V GS = -.5 V - e 72 nc.9 at V GS = - 2.5 V - e PowerPAK 22-8S FEATURES TrenchFET
More informationP-Channel 40 V (D-S) MOSFET
P-Channel 4 V (-S) MOSFET Si44FY 8 7 6 SO-8 Single 5 FEATURES TrenchFET Gen III p-channel power MOSFET % R g tested Material categorization: for definitions of compliance please see www.vishay.com/doc?9992
More informationAutomotive P-Channel 150 V (D-S) 175 C MOSFET
Automotive P-Channel 5 V (-S) 75 C MOSFET SQS8ENW. mm Top View Marking Code: Q6 PowerPAK -8W Single. mm 5 6 7 8 S G Bottom View S S FEATURES TrenchFET power MOSFET AEC-Q qualified d % R g and UIS tested
More informationN-Channel 30 V (D-S) MOSFET
N-Channel 3 V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) () (MAX.) I (A) a Q g (TYP.) 3.84 at V GS = V 37.8.4 at V GS = 4.5 V 32.5 PowerPAK SC-7-6L Single S 4 5 6 8.2 nc FEATURES TrenchFET Gen IV power
More informationN-Channel 100 V (D-S) MOSFET
SiAJ N-Channel V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) Max. I (A) a Q g (Typ.).83 at V GS = V.3.3 at V GS =.5 V 9 PowerPAK SC-7-L-Single 5 2.5 mm S S 2 3 G 2.5 mm Bottom View Ordering Information:
More informationN-Channel 30 V (D-S) MOSFET
N-Channel 3 V (D-S) MOSFET 3.3 mm Top View PRODUCT SUMMARY PowerPAK 22-8 Dual 3.33 mm D 2 D 2 6 5 4 G Bottom View V DS (V) 3 R DS(on) max. (Ω) at V GS = 4.5 V.22 R DS(on) max. (Ω) at V GS = 2.5 V.26 Q
More informationP-Channel 30 V (D-S) MOSFET
SiA483J P-Channel 3 V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) (Max.) I (A) Q g (Typ.) - 3.2at V GS = - V - 2 a 2 nc.3 at V GS = - 4.5 V - 2 a PowerPAK SC-7-6L-Single 6 5 2.5 mm S 4 S 2 3 G 2.5 mm
More informationP-Channel 30 V (D-S) MOSFET
SiA449J P-Channel 3 V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) (Max.) I (A) Q g (Typ.) - 3.24 at V GS = - 4.5 V - 2 a 23. nc.2 at V GS = - V - 2 a.38 at V GS = - 2.5 V - 2 a PowerPAK SC-7-L-Single
More informationP-Channel 12-V (D-S) MOSFET
P-Channel 2-V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) Max. I (A) Q g (Typ.) - 2.255 at V GS = -.5 V - 9 a.28 at V GS = - 3.7 V - 9 a.3 at V GS = - 2.5 V - 9 a. at V GS = -.8 V - 9 a.5 at V GS =
More informationN-Channel 20-V (D-S) MOSFET
New Product N-Channel -V (-S) MOSFET SiBEK PROUCT SUMMARY V S (V) R S(on) (Ω) I (A) a Q g (Typ.). at V GS =.5 V. at V GS =.5 V PowerPAK SC-75-L-Single 5. mm S S G. mm.5 nc Part # code Marking Code A X
More informationN-Channel 20-V (D-S) MOSFET
Si546U N-Channel 2-V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) I (A) a Q g (Typ.) 2.5 at V GS = 4.5 V 2.7 at V GS = 2.5 V 2.2 at V GS =. V 2 PowerPAK ChipFET Single 7 6 5 S Bottom View Ordering Information:
More informationP-Channel 20 V (D-S) MOSFET
SiSS23N P-Channel 2 V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) Max. I (A) Q g (Typ.) - 2 3.3 mm.5 at V GS = -.5 V - 5 e.63 at V GS = - 2.5 V - 5 e.5 at V GS = -.8 V - 5 e 8 PowerPAK 22-8S 7 6 S S
More informationAutomotive N-Channel 60 V (D-S) 175 C MOSFET
Automotive N-Channel V (-S) 75 C MOSFET SQ7AENW PROUCT SUMMARY V S (V) R S(on) (Ω) at V GS = V.3 R S(on) (Ω) at V GS =.5 V.8 I (A) 8 Configuration Single PowerPAK -8W Single 5 7 8 FEATURES TrenchFET power
More informationAutomotive P-Channel 60 V (D-S) 175 C MOSFET
Automotive P-Channel 6 V (-S) 75 C MOSFET SQ75AENW PROUCT SUMMARY V S (V) -6 R S(on) (Ω) at V GS = - V.65 R S(on) (Ω) at V GS = -.5 V.9 I (A) -6 Configuration Single Package PowerPAK -W PowerPAK -W Single
More informationP-Channel 20-V (D-S) MOSFET
SiB33EK P-Channel 2-V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) I (A) Q g (Typ.) - 2.77 at V GS = - 2.5 V - 9 a 7. nc.58 at V GS = -.5 V - 9 a.5 at V GS = -.8 V - 5 PowerPAK SC-75-L-Single 5. mm S
More informationN-Channel 190-V (D-S) MOSFET
New Product N-Channel 9-V (-S) MOSFET SiB452K PROUCT SUMMARY V S (V) R S(on) (Ω) I (A) a Q g (Typ.) 2.4 at V GS = 4.5 V.5 9 2. at V GS = 2.5 V.48 2.3 nc. at V GS =.8 V.4 PowerPAK SC-75-L-Single FEATURES
More informationCommon - Drain Dual N-Channel 30 V (S1-S2) MOSFET
SiSFDN Common - Drain Dual N-Channel 3 V (S-S2) MOSFET 3.3 mm Top View PowerPAK 22-8SCD S S 8 S 2 7 S 2 6 5 3.3 mm PRODUCT SUMMARY V SS2 (V) 3 R SS2(on) max. () at V GS = V.5 R SS2(on) max. () at V GS
More informationDual N-Channel 30 V (D-S) MOSFETs
Dual N-Channel 3 V (D-S) MOSFETs 3 mm mm Top View PRODUCT SUMMARY PowerPAIR 3 x 3 3 mm D Bottom View CHANNEL- CHANNEL-2 V DS (V) 3 3 R DS(on) max. ( ) at V GS = V.285.5 R DS(on) max. ( ) at V GS = 4.5
More informationN-Channel 150 V (D-S) MOSFET
N-Channel 5 V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) Max. I D (A) a Q g (Typ.) 5.232 at V GS = V 36.8.272 at V GS = 7.5 V 34 6. nc PowerPAK SO-8L Single FEATURES ThunderFET technology optimizes
More informationDual N-Channel 25 V (D-S) MOSFETs
Dual N-Channel 25 V (D-S) MOSFETs 3 mm mm Top View PRODUCT SUMMARY PowerPAIR 3 x 3 3 mm D Bottom View CHANNEL- CHANNEL-2 V DS (V) 25 25 R DS(on) max. ( ) at V GS = V.83.424 R DS(on) max. ( ) at V GS =
More informationAutomotive P-Channel 200 V (D-S) 175 C MOSFET
Automotive P-Channel 2 V (D-S) 75 C MOSFET SQJ43AEP 6.5 mm PowerPAK SO-8L Single 5.3 mm D 4 G 3 S 2 S S FEATURES TrenchFET power MOSFET AEC-Q qualified % R g and UIS tested Material categorization: for
More informationAutomotive N-Channel 80 V (D-S) 175 C MOSFET
Automotive N-Channel 8 V (D-S) 75 C MOSFET PRODUCT SUMMARY V DS (V) 8 R DS(on) () at V GS = V.3 I D (A) 5 Configuration Single Package PowerPAK 8 x 8L PowerPAK 8 x 8L Single FEATURES TrenchFET power MOSFET
More informationP-Channel 30 V (D-S) MOSFET
P-Channel 3 V (-) MOFET ian 3.3 mm Top View PROUCT UMMARY PowerPAK 22-8 ingle 8 3.3 mm 4 G Bottom View V (V) -3 R (on) max. () at V G = V.49 R (on) max. () at V G = 4.5 V.82 Q g typ. (nc) 27 I (A) 6 a,
More informationN-Channel 40 V (D-S) 175 C MOSFET
N-Channel 4 V (D-S) 75 C MOSFET 6.5 mm PRODUCT SUMMARY PowerPAK SO-8L Single Top View 5.3 mm V DS (V) 4 R DS(on) max. ( ) at V GS = V.265 R DS(on) max. ( ) at V GS = 4.5 V.36 Q g typ. (nc) 23 I D (A) a
More informationAutomotive Dual N-Channel 40 V (D-S) 175 C MOSFET
Automotive Dual N-Channel 4 V (D-S) 75 C MOSFET 6.5 mm mm PowerPAK SO-8L Dual 5.3 mm D 2 D 4 G 2 3 S 2 2 G S FEATURES TrenchFET power MOSFET AEC-Q qualified % R g and UIS tested Material categorization:
More informationN-Channel 40 V (D-S) MOSFET
N-Channel 4 V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) Max. I D (A) a, g Q g (Typ.) 4.235 at V GS = V 6.32 at V GS = 4.5 V 6 32 nc PowerPAK SO-8L Single FEATURES TrenchFET Gen IV power MOSFET
More informationAutomotive N-Channel 40 V (D-S) 175 C MOSFET
Automotive N-Channel 40 V (D-S) 175 C MOSFET PRODUCT SUMMARY V DS (V) 40 R DS(on) () at V GS = 10 V 0.0063 R DS(on) () at V GS = 4.5 V 0.0075 I D (A) 58 Configuration Single PowerPAK SO-8L Single D FEATURES
More informationDual N-Channel 30 V (D-S) MOSFET
Dual N-Channel 3 V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) () MAX. I D (A) Q g (TYP.) 3 2.5 mm.29 at V GS = V 4.5 a 3 nc.25 at V GS = V 4.5 a.33 at V GS = 4.5 V 4.5 a PowerPAK SC-7-L Dual 2.5 25
More informationAutomotive P-Channel 60 V (D-S) 175 C MOSFET
Automotive P-Channel 60 V (D-S) 75 C MOSFET PRODUCT SUMMARY V DS (V) -60 R DS(on) () at V GS = - V 0.0250 R DS(on) () at V GS = -4.5 V 0.0350 I D (A) -36 Configuration Single Package PowerPAK SO-8L FEATURES
More informationDual N-Channel 30 V (D-S) MOSFETs
Dual N-Channel 3 V (D-S) MOSFETs PRODUCT SUMMARY Channel- 3 Channel-2 3 V DS (V) R DS(on) ( ) (Max.) I D (A) Q g (Typ.).2 at V GS = V 6 a 6.8 nc.5 at V GS =.5 V 6 a.37 at V GS = V 28 a 32 nc.5 at V GS
More informationP-Channel 20 V (D-S) MOSFET
P-Channel 2 V (-S) MOSFET Si545AEU PROUCT SUMMARY V S (V) R S(on) () (Max.) I (A) a Q g (Typ.) - 2.96 at V GS = - 4.5 V - 25.32 at V GS = - 2.5 V - 25.22 at V GS = -.8 V - 7 8 PowerPAK ChipFET Single 7
More informationAutomotive N-Channel 60 V (D-S) 175 C MOSFET
Automotive N-Channel 6 V (-S) 75 C MOSFET PROUCT SUMMARY V S (V) 6 R S(on) () at V GS = V.98 R S(on) () at V GS = 4.5 V.22 I (A) 2 Configuration Single SO-8 FEATURES TrenchFET Power MOSFET AEC-Q Qualified
More informationN-Channel 150 V (D-S) MOSFET
N-Channel 5 V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) MAX. I D (A) a Q g (TYP.) 5.77 at V GS = V 7.7.85 at V GS = 7.5 V 7.6.25 at V GS = 6 V 4 PowerPAK SC-7-6L Single 4.3 nc 2 D 3 D G Top View
More informationN-Channel 12 V (D-S) MOSFET
N-Channel 2 V (D-S) MOSFET SiUD42ED.4 mm PowerPAK 86 Single D 3 FEATURES TrenchFET power MOSFET Ultra small.8 mm x.6 mm outline Ultra thin.4 mm max. height Typical ESD protection 5 V (HBM).8 mm Top View.6mm
More informationAutomotive P-Channel 12 V (D-S) 175 C MOSFET
Automotive P-Channel 2 V (D-S) 75 C MOSFET SQJ4EP 6.5 mm PowerPAK SO-8L Single 5.3 mm D 4 G 3 S 2 S S FEATURES TrenchFET power MOSFET AEC-Q qualified % R g and UIS tested Material categorization: for definitions
More informationN-Channel 12 V (D-S) and P-Channel 20 V (D-S) MOSFET
N-Channel V (D-S) and P-Channel V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) MAX. I D (A) Q g (TYP.) N-Channel P-Channel -.33 at V GS =.5 V.5 a. nc.8 at V GS =.5 V.5 a. at V GS =.8 V.5 a.5 at V
More informationAutomotive N-Channel 60 V (D-S) 175 C MOSFET
Automotive N-Channel V (-S) 75 C MOSFET PROUCT SUMMARY V S (V) R S(on) () at V GS = V 2 R S(on) () at V GS = 4.5 V 5 I (A).7 Configuration Single Package SC-7 SOT-33 SC-7 Single ( leads) S 4 5 FEATURES
More informationDual N-Channel 30 V (D-S) MOSFET
Dual N-Channel 3 V (D-S) MOSFET SiA98EDJ PRODUCT SUMMARY V DS (V) R DS(on) () MAX. I D (A) Q g (TYP.) 3 2.5 mm Top View.5 at V GS = 2.5 V 4.5 a 3. nc.58 at V GS = 4.5 V 4.5 a.77 at V GS =.8 V 4.5 a PowerPAK
More informationN- and P-Channel 20-V (D-S) MOSFET
SiA59EDJ N- and P-Channel -V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) Q g (Typ.) N-Channel P-Channel -. at V GS =.5 V.5 a 3.7 nc.5 at V GS =.5 V.5 a.9 at V GS = -.5 V -.5 a 5.3 nc.37
More informationN-Channel 100-V (D-S) MOSFET
N-Channel -V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) (Ω) I (A).5 at V GS = V 7.9. at V GS = 6. V 7.5 FEATURES Halogen-free According to IEC 649-- efinition TrenchFET Power MOSFETs 75 C Maximum Junction
More informationAutomotive N-Channel 100 V (D-S) 175 C MOSFET
Automotive N-Channel V (D-S) 75 C MOSFET PRODUCT SUMMARY V DS (V) R DS(on) () at V GS = V.34 R DS(on) () at V GS = 4.5 V.4 I D (A) 35 Configuration Single Package PowerPAK 8 x 8L PowerPAK 8 x 8L Single
More informationN-Channel 150-V (D-S) MOSFET
Si4848Y N-Channel -V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) (Ω) I (A).8 at V GS = V 3.7.9 at V GS = 6. V 3. FEATURES Halogen-free According to IEC 649-- efinition TrenchFET Power MOSFETs Compliant
More informationN-Channel 60 V (D-S) MOSFET
N-Channel 6 V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) Max. I D (A) Q g (Typ.).8 at V GS = 1 V 46.5 6.1 at V GS = 6 V 41.6 9.3 nc.125 at V GS = 4.5 V 37.2 PowerPAK SO-8L 6.15 mm D 5.13 mm FEATURES
More informationAutomotive N-Channel 100 V (D-S) 175 C MOSFET
Automotive N-Channel 0 V (D-S) 75 C MOSFET PRODUCT SUMMARY V DS (V) 0 R DS(on) ( ) at V GS = V 0.038 R DS(on) ( ) at V GS = 4.5 V 0.050 I D (A) 23 Configuration Single Package PowerPAK SO-8L PowerPAK SO-8L
More informationDual P-Channel 12-V (D-S) MOSFET
Dual P-Channel -V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) Q g (Typ.) -. at V GS = -.5 V -.5 a.5 nc. at V GS = -.5 V -.5 a. at V GS = -.8 V - 3.5 PowerPAK SC-7- Dual FEATURES Halogen-free
More informationDual P-Channel 12-V (D-S) MOSFET
New Product Dual P-Channel -V (D-S) MOSFET SiA93ADJ PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) Q g (Typ.) -.8 at V GS = -.5 V -.5 a 8. nc. at V GS = -.5 V -.5 a.5 at V GS = -.8 V -.5 a PowerPAK SC-7-
More informationDual N-Channel 12-V (D-S) MOSFET
New Product Dual N-Channel -V (D-S) MOSFET SiA9DJ PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) a Q g (Typ.). at V GS =.5 V.5. at V GS =.5 V.5.5 nc.3 at V GS =. V.5 PowerPAK SC-7- Dual FEATURES Halogen-free
More informationDual P-Channel 30 V (D-S) MOSFET
SiA95DJ Dual P-Channel 3 V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) Q g (Typ.) - 3.87 at V GS = - V -.5 a 3. nc.5 at V GS = -.5 V -.5 a PowerPAK SC-7- Dual FEATURES Halogen-free According
More informationN-Channel 30 V (D-S) MOSFET
N-Channel 3 V (D-S) MOSFET SUD5N3-12P-GE3 PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) a.12 at V GS = 1 V 16.8 3.175 at V GS = 4.5 V 13.9 FEATURES TrenchFET power MOSFET 1 % R g and UIS tested Material
More informationAutomotive N-Channel 40 V (D-S) 175 C MOSFET
Automotive N-Channel 4 V (D-S) 175 C MOSFET PRODUCT SUMMARY V DS (V) 4 R DS(on) ( ) at V GS = 1 V.41 R DS(on) ( ) at V GS = 4.5 V.52 I D (A) 32 Configuration Single PowerPAK SO-8L Single D FEATURES TrenchFET
More informationDual N-Channel 20-V (D-S) MOSFET
New Product Dual N-Channel -V (D-S) MOSFET SiA9EDJ PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) a Q g (Typ.). at V GS =. V.. at V GS =. V.. nc PowerPAK SC-7- Dual FEATURES Halogen-free According to IEC
More informationP-Channel 30-V (D-S) MOSFET
P-Channel 3-V (-) MOFET PROUCT UMMARY V (V) R (on) (Ω) I (A) a Q g (Typ.) - 3.65 at V G = - V - 35 nc 8 7 6 PowerPAK O-8 5 6.5 mm 5.5 mm Bottom View 3 G 4 Ordering Information: i7447ap-t-e3 (Lead (Pb)-free)
More informationAutomotive N-Channel 60 V (D-S) 175 C MOSFET
Automotive N-Channel V (-S) 75 C MOSFET PROUCT SUMMARY V S (V) R S(on) () at V GS = V.42 R S(on) () at V GS = 4.5 V.3 I (A) 7 Configuration Single TSOP- Single S 4 5 Top View Marking Code: 8Axxx 2 3 G
More informationAutomotive P-Channel 60 V (D-S) 175 C MOSFET
Automotive P-Channel 6 V (D-S) 175 C MOSFET PRODUCT SUMMARY V DS (V) - 6 R DS(on) (Ω) at V GS = - 1 V.85 R DS(on) (Ω) at V GS = - 4.5 V 15 I D (A) - 8 Configuration Single FEATURES Halogen-free According
More informationN-Channel 20 V (D-S) MOSFET
SiH N-Channel V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) (Ω) I (A). at V GS =. V.9.7 at V GS =. V..9 at V GS =.8 V. SOT- SC-7 (-LEAS) FEATURES Halogen-free According to IEC 9-- efinition TrenchFET Power
More informationN- and P-Channel 20-V (D-S) MOSFET
Si557DU N- and P-Channel -V (D-S) MOSFET PRODUCT SUMMARY V DS R DS(on) (Ω) I D (A) a Q g N-Channel.39 at V GS =.5 V.5 at V GS =.5 V.55 at V GS =. V.7 at V GS = -.5 V - P-Channel -. at V GS = -.5 V -.3
More informationN-Channel 100 V (D-S) MOSFET
Si9DY N-Channel V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) Max. I D (A) a Q g (Typ.). at V GS = V 9.7.5 at V GS = 7.5 V 9.2 27.9 nc.2 at V GS = 6. V 8 SO-8 S 8 D S 2 7 D S 3 6 D G 5 D FEATURES
More informationN-Channel 60 V (D-S), MOSFET
N-Channel 6 V (D-S), MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) a Q g (Typ.).3 at V GS = V 9. 6 6.5 nc.45 at V GS = 4.5 V 7.6 FEATURES Halogen-free According to IEC 6249-2-2 Definition TrenchFET
More informationN-Channel 30 V (D-S) MOSFET
N-Channel 3 V (-S) MOSFET Si38EL PROUCT SUMMARY V S (V) R S(on) (Ω) MAX. I (A) c Q g (TYP.) 3.3 at V GS = V.5.44 at V GS = 4.5 V.4.85 at V GS =.5 V.3 SOT-33 SC-7 (3 leads).4 nc FEATURES TrenchFET power
More informationAutomotive P-Channel 80 V (D-S) 175 C MOSFET
Automotive P-Channel 8 V (D-S) 75 C MOSFET PRODUCT SUMMARY V DS (V) - 8 R DS(on) (Ω) at V GS = - V.25 R DS(on) (Ω) at V GS = - 6 V.29 I D (A) - 32 Configuration Single PowerPAK SO-8L Single S FEATURES
More informationAutomotive N-Channel 200 V (D-S) 175 C MOSFET
Automotive N-Channel 2 V (D-S) 75 C MOSFET SQM942E FEATURES TO-263 Top View G D S TrenchFET power MOSFET Package with low thermal resistance AEC-Q qualified % R g and UIS tested Material categorization:
More informationAutomotive N-Channel 60 V (D-S) 175 C MOSFET
Automotive N-Channel 60 V (D-S) 75 C MOSFET 6.5 mm PowerPAK SO-8L Single 5.3 mm D 4 G 3 S 2 S S FEATURES TrenchFET power MOSFET AEC-Q qualified Material categorization: for definitions of compliance please
More informationDual P-Channel 20-V (D-S) MOSFET
New Product Dual P-Channel 2-V (D-S) MOSFET Si9933CDY PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) a, e Q g (Typ.).58 at V GS = -.5 V - - 2 8.9 at V GS = - 2.5 V - FEATURES Halogen-free Option Available
More informationAutomotive P-Channel 40 V (D-S) 175 C MOSFET
Automotive P-Channel 4 V (D-S) 75 C MOSFET SQM43EL TO-263 S G S D G Top View D P-Channel MOSFET PRODUCT SUMMARY V DS (V) -4 R DS(on) () at V GS = - V.3 R DS(on) () at V GS = -4.5 V.38 I D (A) -2 Configuration
More informationN-Channel 150 V (D-S) MOSFET
N-Channel 5 V (-S) MOSFET Si344AV 6 Marking code: BS TSOP-6 Single S 4 5 Top View PROUCT SUMMARY V S (V) 5 R S(on) max. (Ω) at V GS = V.38 R S(on) max. (Ω) at V GS = 4.5 V.432 Q g typ. (nc).65 I (A) d
More informationN- and P-Channel 30 V (D-S) MOSFET
N- and P-Channel 3 V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) a Q g (Typ.) N-Channel 3.47 at V GS = V 6..65 at V GS = 4.5 V 5.2 2.75 P-Channel - 3.89 at V GS = - V - 4.3.4 at V GS = -
More informationN-Channel 150-V (D-S) MOSFET
N-Channel 5-V (D-S) MOSFET PRODUCT SUMMARY V (BR)DSS (V) R DS(on) (Ω) I D (A) Q g (Typ.) 5.8 at V GS = V 75 d 64 FEATURES TrenchFET Power MOSFET % R g and UIS Tested APPLICATIONS Primary Side Switch Power
More informationAutomotive N-Channel 60 V (D-S) 175 C MOSFET
Automotive N-Channel 6 V (D-S) 75 C MOSFET TO-263 7-Lead D S FEATURES TrenchFET power MOSFET Package with low thermal resistance % R g and UIS tested AEC-Q qualified Material categorization: for definitions
More informationN-Channel 100 V (D-S) MOSFET
N-Channel V (D-S) MOSFET SUDN-5L-GE PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) Q g (Typ). at V GS = V.5.7.5 at V GS = 4.5 V FEATURES TrenchFET Power MOSFETs Material categorization: For definitions
More informationP-Channel 30-V (D-S), MOSFET
SUD5P3- P-Channel 3-V (D-S), MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) (A) a. at V GS = - V - 5-3.8 at V GS = -.5 V - 2 FEATURES TrenchFET Power MOSFETs RoHS COMPLIANT S TO-252 G Drain Connected to
More informationComplementary N- and P-Channel 40-V (D-S) MOSFET
Complementary N- and P-Channel -V (D-S) MOSFET PRODUCT SUMMARY V DS (V) r DS(on) (Ω) I D (A) a Q g (Typ.) N-Channel.7 at V GS = V 8. at V GS =.5 V 8 2 P-Channel -. at V GS = - V - 8.5 at V GS = -.5 V -
More informationP-Channel 30-V (D-S) MOSFET
P-Channel 3-V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) I (A) Q g (Typ.) - 3.49 at V GS = - V 6.6 a 2 nc.7 at V GS = - 4.5 V 5 a S FEATURES Halogen-free TrenchFET Power MOSFET % R g Tested APPLICATIONS
More informationP-Channel 60 V (D-S) MOSFET
P-Channel 6 V (-S) MOSFET Si37V PROUCT SUMMARY V S (V) R S(on) (Ω) MAX. I (A) d Q g (TYP.) -6.89 at V GS = - V -5..46 at V GS = -4.5 V -4 6 TSOP-6 Single S 4 5. nc FEATURES TrenchFET power MOSFET % R g
More informationN-Channel 200 V (D-S) 175 C MOSFET
N-Channel 2 V (D-S) 75 C MOSFET SUP942E TO-22AB S D Top View G PRODUCT SUMMARY V DS (V) 2 R DS(on) max. ( ) at V GS = V.52 R DS(on) max. ( ) at V GS = 7.5 V.69 Q g typ. (nc) 58 I D (A) 9 Configuration
More informationN-Channel 100 V (D-S) MOSFET
N-Channel V (D-S) MOSFET SUA76E PRODUCT SUMMARY V DS (V) R DS(on) () MAX. I D (A) Q g (TYP.).6 at V GS = V 56.6.7 at V GS = 7.5 V 54.4 53.5 nc Thin-Lead TO-22 FULLPAK FEATURES ThunderFET power MOSFET Q
More informationN-Channel 40-V (D-S) MOSFET
SUD5N4-8m8P N-Channel 4-V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) a Q g (Typ.) 4 TO-252.88 at V GS = V 5.5 at V GS = 4.5 V 5 6 nc FEATURES Halogen-free According to IEC 6249-2-2 Definition
More informationDual P-Channel 20-V (D-S) MOSFET
New Product Dual P-Channel 2-V (D-S) MOSFET Si93CDY PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) a, e Q g (Typ.) - 2.92 at V GS = - V - 8.33 at V GS = -.5 V - 8 2 SO-8 S 8 D G 2 7 D FEATURES Halogen-free
More informationP-Channel 8-V (D-S) MOSFET
New Product P-Channel 8-V (D-S) MOSFET Si25ADS PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) Q g (Typ.).4 at V GS = - 4.5 V - 4. - 8.6 at V GS = - 2.5 V -.4 7.8 nc.88 at V GS = -.8 V - 2. FEATURES Halogen-free
More informationAutomotive P-Channel 60 V (D-S) 175 C MOSFET
Automotive P-Channel 6 V (D-S) 75 C MOSFET PRODUCT SUMMARY V DS (V) -6 R DS(on) (Ω) at V GS = - V.93 R DS(on) (Ω) at V GS = -4.5 V.33 I D (A) - Configuration Single TO-22AB FEATURES TrenchFET power MOSFET
More informationDual N-Channel 20-V (D-S) MOSFET
Si99CDY Dual N-Channel -V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) a Q g (Typ.). at V GS =.5 V. at V GS =.5 V nc SO- FEATURES Halogen-free According to IEC 9-- Definition TrenchFET Power
More informationN- and P-Channel 2.5-V (G-S) MOSFET
N- and P-Channel.5-V (G-S) MOSFET PRODUCT SUMMARY V DS (V) (Ω) (A) N-Channel. at = 4.5 V ± 4.5.4 at =.5 V ± 3.9 P-Channel -.5 at = - 4.5 V ± 3.5.85 at = -.5 V ±.7 FEATURES Halogen-free Option Available
More informationDual N-Channel 30-V (D-S) MOSFET with Schottky Diode
Si468DY Dual N-Channel 3-V (D-S) MOSFET with Schottky Diode PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) a Q g (Typ.) Channel- 3 Channel-2 3.7 at V GS = V 8..95 at V GS = 4.5 V 7.5. at V GS = V 5.2.5
More informationP-Channel 100-V (D-S) 175 C MOSFET
P-Channel -V (D-S) 75 C MOSFET SUD5P-43L PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A) a Q g (Typ.).43 at V GS = - V - 37-54 nc.48 at V GS = - 4.5 V - 35 FEATURES TrenchFET Power MOSFET Compliant to RoHS
More informationAutomotive N-Channel 300 V (D-S) 175 C MOSFET
Automotive N-Channel 300 V (D-S) 175 C MOSFET PRODUCT SUMMARY V DS (V) 300 R DS(on) (Ω) at V GS = V 0.330 I D (A) Configuration Single TO-252 D FEATURES TrenchFET power MOSFET Package with low thermal
More informationDual P-Channel 40 V (D-S) MOSFET
Dual P-Channel V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) d Q g (Typ.) -.27 at V GS = - V - 8.3 at V GS = -.5 V - 7.2 2.7 nc SO-8 S 8 D G 2 7 D S 2 3 D 2 G 2 5 D 2 FEATURES Halogen-free
More informationN-Channel 100-V (D-S) 175 C MOSFET
N-Channel -V (D-S) 75 C MOSFET SUD4N-25 PRODUCT SUMMARY V DS (V) R DS(on) (Ω) I D (A).25 at V GS = V 4.28 at V GS = 4.5 V 38 FEATURES TrenchFET Power MOSFET 75 C Maximum Junction Temperature % R g Tested
More informationAutomotive P-Channel 80 V (D-S) 175 C MOSFET
Automotive P-Channel 8 V (D-S) 175 C MOSFET PRODUCT SUMMARY V DS (V) - 8 R DS(on) () at V GS = - 1 V.25 R DS(on) () at V GS = - 4.5 V.31 I D (A) - 5 Configuration Single FEATURES TrenchFET Power MOSFET
More informationN-Channel 30 V (D-S) MOSFET
N-Channel 3 V (-S) MOSFET Si44H PROUCT SUMMARY V S (V) R S(on) (Ω) I (A) a Q g (TYP.) 3.46 at V GS = 4.5 V 4.5 at V GS =.5 V 4.57 at V GS =.8 V 4 6 SOT-363 SC-7 Single (6 leads) S 4 5 5.7 nc FEATURES TrenchFET
More informationDual N-Channel 30 V (D-S) MOSFET
Dual N-Channel 3 V (D-S) MOSFET PRODUCT SUMMARY V DS (V) R DS(on) ( ) I D (A) Q g (Typ.) 3. at V GS = V 2..7 at V GS =.5 V 5. nc SO-8 S 8 D G 2 7 D FEATURES Halogen-free According to IEC 29-2-2 Definition
More informationP-Channel 60 V (D-S) MOSFET
P-Channel 6 V (-S) MOSFET TU4P6 PROUCT SUMMARY V S (V) R S(on) ( ) (A).45 at V GS = - V - 4-6 d.54 at V GS = - 4.5 V - 4 d FEATURES TrenchFET Power MOSFET Material categorization: APPLICATIONS Load Switch
More informationN- and P-Channel 30-V (D-S) MOSFET
N- and P-Channel -V (D-S) MOSFET PRODUCT SUMMARY V DS (V) (Ω) I D (A) N-Channel.3 at V GS = V 5.9.53 at V GS = 4.5 V 4.9 P-Channel -.53 at V GS = - V - 4.9.9 at V GS = - 4.5 V - 3.7 FEATURES Halogen-free
More informationN-Channel 20 V (D-S) MOSFET
N-Channel 2 V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) ( ) Max. I (A) a Q g (Typ.) 2.3 at V GS = 4.5 V 7.5 4.3 nc.27 at V GS = V 8 d.49 at V GS = 2.5 V 6. TSOP-6 Top View 6 FEATURES TrenchFET Power MOSFET
More informationDual N-Channel 30-V (D-S) MOSFET
Dual N-Channel 3-V (D-S) MOSFET PRODUCT SUMMARY V DS (V) (Ω) I D (A).95 at V GS = V. 3. at V GS = 4.5 V 9.4 FEATURES Halogen-free Option Available TrenchFET Power MOSFET % R g Tested APPLICATIONS DC/DC
More information