Power MOSFET FEATURES. IRFP360PbF SiHFP360-E3 IRFP360 SiHFP360
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1 Power MOFET PROUCT UMMRY V (V) 00 R (on) (Ω) = 10 V 0.20 Q g (Max.) (nc) 210 Q gs (nc) 30 Q gd (nc) 110 Configuration ingle TO27C G ORERING INFORMTION Package Lead (Pb)free npb G NChannel MOFET FETURE ynamic dv/dt Rated Repetitive valanche Rated Isolated Central Mounting Hole Fast witching Ease of Paralleling imple rive Requirements Compliant to RoH irective 2002/95/EC vailable RoH* COMPLINT ECRIPTION Third generation Power MOFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and costeffectiveness. The TO27C package is preferred for commercialindustrial applications where higher power levels preclude the use of TO220B devices. The TO27C is similar but superior to the earlier TO218 package because of its isolated mounting hole. It also provides greater creepage distance between pins to meet the requirements of most safety specifications. TO27C IRFP360PbF ihfp360e3 IRFP360 ihfp360 BOLUTE MXIMUM RTING (T C = 25 C, unless otherwise noted) PRMETER YMBOL LIMIT UNIT rainource Voltage V 00 V Gateource Voltage ± 20 Continuous rain Current at 10 V T C = 25 C 23 I T C = 100 C 1 Pulsed rain Current a I M 92 Linear erating Factor 2.2 W/ C ingle Pulse valanche Energy b E 1200 mj Repetitive valanche Current a I R 23 Repetitive valanche Energy a E R 28 mj Maximum Power issipation T C = 25 C P 280 W Peak iode Recovery dv/dt c dv/dt.0 V/ns Operating Junction and torage Temperature Range T J, T stg 55 to 150 oldering Recommendations (Peak Temperature) for 10 s 300 d C Mounting Torque 632 or M3 screw Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. V = 50 V, starting T J = 25 C, L =.0 mh, R g = 25 Ω, I = 23 (see fig. 12). c. I 23, di/dt 170 /μs, V V, T J 150 C. d. 1.6 mm from case. * Pb containing terminations are not RoH compliant, exemptions may apply 10 lbf in 1.1 N m ocument Number: Rev. B, 1Mar11 1
2 THERML REITNCE RTING PRMETER YMBOL TYP. MX. UNIT Maximum Junctiontombient R thj 0 Casetoink, Flat, Greased urface R thc 0.2 C/W Maximum JunctiontoCase (rain) R thjc 0.5 PECIFICTION (T J = 25 C, unless otherwise noted) PRMETER YMBOL TET CONITION MIN. TYP. MX. UNIT tatic rainource Breakdown Voltage V = 0 V, I = 250 μ 00 V V Temperature Coefficient ΔV /T J Reference to 25 C, I = 1 m 0.56 V/ C Gateource Threshold Voltage (th) V =, I = 250 μ V Gateource Leakage I G = ± 20 V ± 100 n V = 00 V, = 0 V 25 Zero Gate Voltage rain Current I V = 320 V, = 0 V, T J = 125 C 250 μ rainource Ontate Resistance R (on) = 10 V I = 1 b 0.20 Ω Forward Transconductance g fs V = 50 V, I = 1 b 1 ynamic Input Capacitance C iss = 0 V, 500 Output Capacitance C oss V = 25 V, 1100 pf Reverse Transfer Capacitance C rss f = 1.0 MHz, see fig Total Gate Charge Q g 210 Gateource Charge Q gs I = 10 V = 23, V = 320 V, see fig. 6 and 13 b 30 nc Gaterain Charge Q gd 110 TurnOn elay Time t d(on) 18 Rise Time t r V = 200 V, I = 23, 79 TurnOff elay Time t d(off) R g =.3 Ω, R = 8.3 Ω, see fig. 10 b 100 ns Fall Time t f 67 Between lead, Internal rain Inductance L 6 mm (0.25") from 5.0 package and center of nh G Internal ource Inductance L die contact 13 rainource Body iode Characteristics Continuous ourcerain iode Current I MOFET symbol 23 showing the integral reverse Pulsed iode Forward Current a G I M p n junction diode 92 Body iode Voltage V T J = 25 C, I = 23, = 0 V b 1.8 V Body iode Reverse t rr ns Recovery Time T J = 25 C, I F = 23, di/dt = 100 /μs b Body iode Reverse Recovery Charge Q rr μc Forward TurnOn Time t on Intrinsic turnon time is negligible (turnon is dominated by L and L ) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 μs; duty cycle 2 %. ocument Number: Rev. B, 1Mar11
3 TYPICL CHRCTERITIC (25 C, unless otherwise noted) Fig. 1 Typical Output Characteristics, T C = 25 C Fig. 3 Typical Transfer Characteristics Fig. 2 Typical Output Characteristics, T C = 150 C Fig. Normalized OnResistance vs. Temperature ocument Number: Rev. B, 1Mar11 3
4 Fig. 5 Typical Capacitance vs. raintoource Voltage Fig. 7 Typical ourcerain iode Forward Voltage Fig. 6 Typical Gate Charge vs. Gatetoource Voltage Fig. 8 Maximum afe Operating rea ocument Number: Rev. B, 1Mar11
5 V R R G.U.T. V 10 V Pulse width 1 µs uty factor 0.1 % Fig. 10a witching Time Test Circuit V 90 % 10 % t d(on) t r t d(off) t f Fig. 9 Maximum rain Current vs. Case Temperature Fig. 10b witching Time Waveforms Fig. 11 Maximum Effective Transient Thermal Impedance, JunctiontoCase ocument Number: Rev. B, 1Mar11 5
6 L Vary t p to obtain required I R G V I.U.T. V V t p V V 10 V t p 0.01 Ω I Fig. 12a Unclamped Inductive Test Circuit Fig. 12b Unclamped Inductive Waveforms Fig. 12c Maximum valanche Energy vs. rain Current Current regulator ame type as.u.t. Q G 50 kω 12 V 0.2 µf 0.3 µf Q G Q G.U.T. V V G Charge Fig. 13a Basic Gate Charge Waveform 3 m Fig. 13b Gate Charge Test Circuit I G I Current sampling resistors ocument Number: Rev. B, 1Mar11
7 Peak iode Recovery dv/dt Test Circuit.U.T. Circuit layout considerations Low stray inductance Ground plane Low leakage inductance current transformer R g dv/dt controlled by R g river same type as.u.t. I controlled by duty factor.u.t. device under test V river gate drive P.W. Period = P.W. Period = 10 V a.u.t. l waveform Reverse recovery current Body diode forward current di/dt.u.t. V waveform iode recovery dv/dt V Reapplied voltage Inductor current Body diode forward drop Ripple 5 % I Note a. = 5 V for logic level devices Fig. 1 For NChannel maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for ilicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see ocument Number: Rev. B, 1Mar11 7
8 TO27C (High Voltage) Package Information 3 B R/2 Q E E/2 2 7 ØP (atum B) Ø k M B M ØP1 2 2 x R (2) Thermal pad 5 L1 C 2 x b2 3 x b 0.10 M C M b Lead ssignments 1. Gate 2. rain 3. ource. rain 2 x e L ee view B 1 C E (b, b2, b) () ection C C,, E E MILLIMETER INCHE MILLIMETER INCHE IM. MIN. MX. MIN. MX. IM. MIN. MX. MIN. MX E E b e 5.6 BC BC b Ø k b L b L b N 7.62 BC BC b Ø P c Ø P c Q R BC BC ECN: X130103Rev., 01Jul13 WG: 5971 Notes 1. imensioning and tolerancing per ME Y1.5M Contour of slot optional. 3. imension and E do not include mold flash. Mold flash shall not exceed mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body.. Thermal pad contour optional with dimensions 1 and E1. 5. Lead finish uncontrolled in L1. 6. Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.15"). 7. Outline conforms to JEEC outline TO27 with exception of dimension c. 8. Xian and Mingxin actually photo. E View B C C Planting (c) E M B M View (b1, b3, b5) Base metal c1 Revision: 01Jul13 1 ocument Number: For technical questions, contact: hvm@vishay.com THI OCUMENT I UBJECT TO CHNGE WITHOUT NOTICE. THE PROUCT ECRIBE HEREIN N THI OCUMENT RE UBJECT TO PECIFIC ICLIMER, ET FORTH T
9 Legal isclaimer Notice Vishay isclaimer LL PROUCT, PROUCT PECIFICTION N T RE UBJECT TO CHNGE WITHOUT NOTICE TO IMPROVE RELIBILITY, FUNCTION OR EIGN OR OTHERWIE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, noninfringement and merchantability. tatements regarding the suitability of products for certain types of applications are based on Vishay s knowledge of typical requirements that are often placed on Vishay products in generic applications. uch statements are not binding statements about the suitability of products for a particular application. It is the customer s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. ll operating parameters, including typical parameters, must be validated for each customer application by the customer s technical experts. Product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, lifesaving, or lifesustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners VIHY INTERTECHNOLOGY, INC. LL RIGHT REERVE Revision: 08Feb17 1 ocument Number: 91000
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Power MOSFET PROUCT SUMMRY V S (V) 100 R S(on) (Ω) V GS = 5.0 V 0.54 Q g (Max.) (nc) 6.1 Q gs (nc) 2.0 Q gd (nc) 3.3 Configuration Single PK (TO-252) G S IPK (TO-251) G S G S N-Channel MOSFET FETURES Halogen-free
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Power MOSFET PRODUCT SUMMARY (V) 60 R DS(on) (Ω) = 10 V 0.14 Q g (Max.) (nc) 34 Q gs (nc) 9.9 Q gd (nc) 16 Configuration Single TO220AB G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G S D PChannel
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Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) ( ) = 0.16 Q g (Max.) (nc) 6 Q gs (nc) 5.5 Q gd (nc) 11 Configuration Single TO0AB G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G D S NChannel MOSFET
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Power MOSFET PRODUCT SUMMARY (V) 500 R DS(on) (Ω) V GS = 10 V 1.5 Q g (Max.) (nc) 38 Q gs (nc) 5.0 Q gd (nc) 22 Configuration Single TO220 FULLPAK G D S ORDERING INFORMATION Package Lead (Pb)free SnPb
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Power MOSFET PRODUCT SUMMARY (V) 00 R DS(on) max. () = 10 V 0.80 Q g max. (nc) 9 Q gs (nc) 5.4 Q gd (nc) 15 Configuration Single S TO0AB G G DS D PChannel MOSFET ORDERING INFORMATION Package Lead (Pb)free
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Power MOSFET IRFB7N50L, SiHFB7N50L PRODUCT SUMMARY V DS (V) 500 R DS(on) ( ) V GS = 0 V 0.28 Q g (Max.) (nc) 30 Q gs (nc) 33 Q gd (nc) 59 Configuration Single TO220AB G DS ORDERING INFORMATION Package
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Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) () = 0.54 Q g max. (nc) 8.3 Q gs (nc) 2.3 Q gd (nc) 3.8 Configuration Single D TO220AB G FEATURES Dynamic dv/dt rating Available Repetitive avalanche rated
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Power MOSFET IRFIB7N50, SiHFIB7N50 PRODUCT SUMMRY V DS (V) 500 R DS(on) (Ω) V GS = 0 V 0.52 Q g (Max.) (nc) 52 Q gs (nc) 3 Q gd (nc) 8 Configuration Single FETURES Low Gate Charge Q g Results in Simple
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Power MOSFET PROUCT SUMMARY (V) 60 R S(on) (Ω) V GS = 10 V 0.10 Q g (Max.) (nc) 25 Q gs (nc) 5.8 Q gd (nc) 11 Configuration Single PAK (TO252) G S IPAK (TO251) G S G S NChannel MOSFET FEATURES ynamic dv/dt
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Power MOSFET PRODUCT SUMMARY (V) 400 R DS(on) (Ω) = V 0.55 Q g (Max.) (nc) 39 Q gs (nc) Q gd (nc) 19 Configuration Single FEATURES Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30 V Rating
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i44by P-Channel 4-V (-) MOFET PROUCT UMMARY V (V) R (on) (Ω) I (A) Q g (Typ.).4 at V G = - V -. - 4 4. at V G = - 4. V - 8.7 FEATURE Halogen-free According to IEC 649-- efinition TrenchFET Power MOFET
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Power MOSFET PRODUCT SUMMARY V DS (V) 200 R DS(on) () = 10 V 0.50 Q g max. (nc) 44 Q gs (nc) 7.1 Q gd (nc) 27 Configuration Single S TO220AB G FEATURES Dynamic dv/dt rating Available Repetitive avalanche
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Power MOSFET PROUCT SUMMARY V S (V) 60 R S(on) ( ) V GS = 10 V 0.20 Q g (Max.) (nc) 11 Q gs (nc) 3.1 Q gd (nc) 5.8 Configuration Single SOT223 G S G S NChannel MOSFET FEATURES Surface Mount Available in
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i445y P-Channel -V (-) MOFET PROUCT UMMARY V (V) R (on) (Ω) I (A).85 at V G = - 4.5 V - 4 -.5 at V G = -.5 V - 3.3 at V G = -.8 V - FEATURE Halogen-free According to IEC 649-- efinition TrenchFET Power
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Power MOSFET IRFP27N60K, SiHFP27N60K PRODUCT SUMMRY V DS (V) 600 R DS(on) ( ) V GS = V 8 Q g (Max.) (nc) 80 Q gs (nc) 56 Q gd (nc) 86 Configuration Single TO-27C S G D ORDERING INFORMTION Package Lead
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Power MOSFET PROUCT SUMMARY (V) 100 R S(on) (Ω) V GS = 10 V 1.2 Q g (Max.) (nc) 8.7 Q gs (nc) 2.2 Q gd (nc) 4.1 Configuration Single SOT223 G S Note a. See device orientation. G S PChannel MOSFET FEATURES
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Power MOSFET PRODUCT SUMMARY (V) 600 R DS(on) () = 10 V 1. Q g max. (nc) 39 Q gs (nc) 10 Q gd (nc) 19 Configuration Single D TO0AB G S G DS NChannel MOSFET ORDERING INFORMATION Package Lead (Pb)free SnPb
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Power MOSFET PRODUCT SUMMARY (V) 500 R DS(on) () = 0.85 Q g max. (nc) 63 Q gs (nc) 9.3 Q gd (nc) 32 Configuration Single D TO-220AB G G DS S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free
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TN5N8SJ/TP5N8SJ/TP5N8FSJ N-Channel 8V (-S) Super Junction Power MOSFET PROUCT SUMMRY (V) at T J max. 8 R S(on) max. at 25 C (Ω) V GS = V.38 Q g max. (nc) 96 Q gs (nc) Q gd (nc) 2 Configuration Single FETURES
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N-Channel Reduced Q g, Fast witching MOFET i48by PROUCT UMMARY V (V) R (on) (Ω) I (A).8 at V G = V 9 3.3 at V G = 4. V 7 FEATURE Halogen-free According to IEC 649-- Available TrenchFET Power MOFET High-Efficient
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Power MOSFET PRODUCT SUMMARY (V) 400 R DS(on) (Ω) V GS = 10 V 0.55 Q g (Max.) (nc) 66 Q gs (nc) 10 Q gd (nc) 33 Configuration Single TO220 FULLPAK G D S ORDERING INFORMATION Package Lead (Pb)free SnPb
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D Series Power MOSFET SiHG22N5D PRODUCT SUMMRY (V) at T J max. 55 R DS(on) max. at 25 C ( ) V GS = V.23 Q g max. (nc) 98 Q gs (nc) 3 Q gd (nc) 22 Configuration Single TO27C D FETURES Optimal Design Low
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Power MOSFET PROUCT SUMMRY V S (V) 100 R S(on) ( ) V GS = 10 V 0.54 Q g (Max.) (nc) 8.3 Q gs (nc) 2.3 Q gd (nc) 3.8 Configuration Single PK (TO-252) G S G S N-Channel MOSFET FETURES ynamic dv/dt Rating
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Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) (Ω) V GS = 5.0 V 0.16 Q g (Max.) (nc) 28 Q gs (nc) 3.8 Q gd (nc) 14 Configuration Single TO-220AB G DS ORDERING INFORMATION Package Lead (Pb)-free SnPb G D
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Power MOSFET PRODUCT SUMMARY (V) 250 R DS(on) (Ω) V GS = 10 V 1.0 Q g (Max.) (nc) 38 Q gs (nc) 8.0 Q gd (nc) 18 Configuration Single TO220 FULLPAK G D S ORDERING INFORMATION Package Lead (Pb)free SnPb
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Power MOSFET PRODUCT SUMMARY (V) 400 R DS(on) (Ω) = 0.55 Q g (Max.) (nc) 63 Q gs (nc) 9.0 Q gd (nc) 3 Configuration Single FEATURES Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of
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Power MOSFET PRODUCT SUMMARY (V) 60 R DS(on) ( ) = 10 V 0.20 Q g (Max.) (nc) 11 Q gs (nc) 3.1 Q gd (nc) 5.8 Configuration Single FEATURES Dynamic dv/dt Rating 175 C Operating Temperature Fast Switching
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Power MOSFET PRODUCT SUMMARY (V) 200 R DS(on) (Max.) (Ω) = 0.80 Q g (Max.) (nc) 29 Q gs (nc) 5.4 Q gd (nc) 15 Configuration Single TO220AB G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G S D PChannel
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Power MOSFET PROUCT SUMMRY V S (V) - 100 R S(on) ( ) V GS = - 10 V 0.60 Q g (Max.) (nc) 18 Q gs (nc) 3.0 Q gd (nc) 9.0 Configuration Single PK (TO-252) G S IPK (TO-251) G S G S P-Channel MOSFET FETURES
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Power MOSFET PRODUCT SUMMARY (V) 600 R DS(on) (Ω) V GS = 10 V 2.2 Q g (Max.) (nc) 31 Q gs (nc) 4.6 Q gd (nc) 17 Configuration Single TO-220AB G DS ORDERING INFORMATION Package Lead (Pb)-free SnPb G D S
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Power MOSFET PRODUCT SUMMRY (V) 600 R DS(on) ( ) V GS = V 0. Q g (Max.) (nc) 330 Q gs (nc) 84 Q gd (nc) 50 Configuration Single D FETURES Low Gate Charge Q g Results in Simple Drive Requirement Improved
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IRFP450, SiHFP450 Power MOSFET PRODUCT SUMMRY V DS (V) 500 R DS(on) (Ω) V GS = 10 V 0.40 Q g (Max.) (nc) 64 Q gs (nc) 16 Q gd (nc) 26 Configuration Single D FETURES Low Gate Charge Q g Results in Simple
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D Series Power MOSFET SiHG32N5D PRODUCT SUMMRY (V) at T J max. 55 R DS(on) max. at 25 C ( ) V GS = V.5 Q g max. (nc) 96 Q gs (nc) 8 Q gd (nc) 29 Configuration Single TO27C S G D ORDERING INFORMTION Package
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Power MOSFET PRODUCT SUMMARY (V) 400 V R DS(on) (Ω) = 10 V 1.8 Q g (Max.) (nc) 0 Q gs (nc) 3.3 Q gd (nc) 11 Configuration Single TO-0AB G DS ORDERING INFORMATION Package Lead (Pb)-free SnPb G D S N-Channel
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Power MOSFET PROUCT SUMMARY (V) 100 R S(on) ( ) V GS = 5.0 V 0.54 Q g (Max.) (nc) 6.1 Q gs (nc) 2.6 Q gd (nc) 3.3 Configuration Single SOT223 G G S S NChannel MOSFET FEATURES Surface Mount Available in
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Power MOSFET PRODUCT SUMMARY (V) 400 R DS(on) () V GS = 10 V 0.55 Q g max. (nc) 66 Q gs (nc) 10 Q gd (nc) 33 Configuration Single D TO220 FULLPAK G S G D S NChannel MOSFET ORDERING INFORMATION Package
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Power MOSFET IRFPS43N50K, SiHFPS43N50K PRODUCT SUMMRY V DS (V) 500 R DS(on) ( ) V GS = V 0.078 Q g (Max.) (nc) 350 Q gs (nc) 85 Q gd (nc) 80 Configuration Single FETURES Low Gate Charge Q g Results in
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Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) (Ω) = 0.54 Q g (Max.) (nc) 8.3 Q gs (nc) 2.3 Q gd (nc) 3.8 Configuration Single FEATURES Dynamic dv/dt Rating Repetitive Avalanche Rated 175 C Operating Temperature
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Power MOSFET PRODUCT SUMMARY (V) 400 R DS(on) (Ω) = 0.55 Q g (Max.) (nc) 63 Q gs (nc) 9.0 Q gd (nc) 3 Configuration Single FEATURES Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of
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Power MOSFET PRODUCT SUMMARY (V) 00 R DS(on) ( ) = 0.40 Q g (Max.) (nc) 43 Q gs (nc) 7.0 Q gd (nc) 3 Configuration Single FEATURES Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching Ease of
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Power MOSFET PRODUCT SUMMARY (V) 500 R DS(on) (Ω) = 0.85 Q g (Max.) (nc) 63 Q gs (nc) 9.3 Q gd (nc) 32 Configuration Single TO220 G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G D S NChannel MOSFET
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Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) (Ω) = 0.7 Q g (Max.) (nc) 16 Q gs (nc) 4.4 Q gd (nc) 7.7 Configuration Single TO0 G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G D S NChannel MOSFET
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Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) ( ) = 0.7 Q g (Max.) (nc) 16 Q gs (nc) 4.4 Q gd (nc) 7.7 Configuration Single TO0AB G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G D S NChannel MOSFET
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Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) (Ω) V GS = 5.0 V 0.54 Q g (Max.) (nc) 6.1 Q gs (nc) 2.6 Q gd (nc) 3.3 Configuration Single TO220AB G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G D
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Power MOSFET PRODUCT SUMMARY (V) 200 R DS(on) (Ω) V GS = 10 V 0.40 Q g (Max.) (nc) 43 Q gs (nc) 7.0 Q gd (nc) 23 Configuration Single FEATURES Dynamic dv/dt Rating Repetitive Avalanche Rated Fast Switching
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Power MOSFET PRODUCT SUMMARY (V) 60 R DS(on) (Ω) V GS = 5.0 V 0.028 Q g (Max.) (nc) 66 Q gs (nc) 12 Q gd (nc) 43 Configuration Single TO-220AB G DS ORDERING INFORMATION Package Lead (Pb)-free SnPb G D
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Power MOSFET PRODUCT SUMMRY V DS (V) 60 R DS(on) () V GS = 10 V 0.018 Q g (Max.) (nc) 110 Q gs (nc) 29 Q gd (nc) 36 Configuration Single D I 2 PK (TO-262) D 2 PK (TO-263) FETURES dvanced process technology
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Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) ( ) = 5.0 V 0.27 Q g (Max.) (nc) 12 Q gs (nc) 3.0 Q gd (nc) 7.1 Configuration Single D HVMDIP FEATURES Dynamic dv/dt Rating Repetitive Avalanche Rated For
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Power MOSFET PRODUCT SUMMARY (V) 60 R DS(on) (Ω) V GS = 10 V 0.028 Q g (Max.) (nc) 67 Q gs (nc) 18 Q gd (nc) 25 Configuration Single FEATURES Dynamic dv/dt Rating 175 C Operating Temperature Fast Switching
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