Power MOSFET. Note. Package D 2 PAK (TO-263) D 2 PAK (TO-263) Lead (Pb)-free and Halogen-free SiHF9630S-GE3 SiHF9630STRL-GE3 a

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1 Power MOSFET IRF9630S, SiHF9630S PROUCT SUMMRY (V) 200 R S(on) () = 10 V 0.80 Q g max. (nc) 29 Q gs (nc).4 Q gd (nc) 1 Configuration Single FETURES Surface mount vailable in tape and reel ynamic dv/dt rating Repetitive avalanche rated Pchannel Fast switching Ease of paralleling vailable vailable G 2 PK (TO263) S ORERING INFORMTION Note a. See device orientation. G Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. V = 0 V, starting T J = 2 C, L = 17 mh, R g = 2, I S = 6. (see fig. 12). c. I S 6., di/dt 120 /μs, V, T J 10 C. d. 1.6 mm from case. e. When mounted on 1" square PCB (FR4 or G10 material). S PChannel MOSFET Note * This datasheet provides information about parts that are RoHScompliant and / or parts that are nonrohscompliant. For example, parts with lead (Pb) terminations are not RoHScompliant. Please see the information / tables in this datasheet for details. ESCRIPTION Third generation power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and costeffectiveness. The 2 PK (TO263) is a surface mount power package capable of accommodating die size up to HEX4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The 2 PK (TO263) is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application. Package 2 PK (TO263) 2 PK (TO263) Lead (Pb)free and Halogenfree SiHF9630SGE3 SiHF9630STRLGE3 a Lead (Pb)free IRF9630SPbF SiHF9630SE3 BSOLUTE MXIMUM RTINGS (T C = 2 C, unless otherwise noted) IRF9630STRLPbF a SiHF9630STLE3 a PRMETER SYMBOL LIMIT UNIT rainsource Voltage 200 V GateSource Voltage ± 20 Continuous rain Current at 10 V T C = 2 C 6. I T C = 100 C 4.0 Pulsed rain Current a I M 26 Linear erating Factor 0.9 Linear erating Factor (PCB mount) e 0.02 Single Pulse valanche Energy b E S 00 mj valanche Current a I R 6.4 Repetitive valanche Energy a E R 7.4 mj Maximum Power issipation T C = 2 C 74 P Maximum Power issipation (PCB mount) e T = 2 C 3.0 Peak iode Recovery dv/dt c dv/dt.0 V/ns Operating Junction and Storage Temperature Range T J, T stg to +10 Soldering Recommendations (Peak temperature) d for 10 s 300 S16074Rev., 02May16 ocument Number: 9108 W/ C W C

2 IRF9630S, SiHF9630S THERML RESISTNCE RTINGS PRMETER SYMBOL TYP. MX. UNIT Maximum Junctiontombient R thj 62 Maximum Junctiontombient (PCB mount) a R thj 40 C/W Maximum JunctiontoCase (rain) R thjc 1.7 Note a. When mounted on 1" square PCB (FR4 or G10 material). SPECIFICTIONS (T J = 2 C, unless otherwise noted) PRMETER SYMBOL TEST CONITIONS MIN. TYP. MX. UNIT Static rainsource Breakdown Voltage = 0, I = 20 μ 200 V Temperature Coefficient /T J Reference to 2 C, I = 1 m 0.24 V/ C GateSource Threshold Voltage (th) =, I = 20 μ V GateSource Leakage I GSS = ± 20 V ± 100 n = 200 V, = 0 V 100 Zero Gate Voltage rain Current I SS = 160 V, = 0 V, T J = 12 C 00 μ rainsource OnState Resistance R S(on) = 10 V I = 3.9 b 0.80 Forward Transconductance g fs = 0 V, I = 3.9 b 2.8 S ynamic Input Capacitance C iss VGS = 0 V, 700 Output Capacitance C oss = 2 V, 200 pf Reverse Transfer Capacitance C rss f = 1.0 MHz, see fig. 40 Total Gate Charge Q g 29 GateSource Charge Q gs I = 10 V = 6., = 160 V, see fig. 6 and 13 b.4 nc Gaterain Charge Q gd 1 TurnOn elay Time t d(on) 12 Rise Time t r V = 100 V, I = 6., 27 TurnOff elay Time t d(off) R g = 12, R = 1, see fig. 10 b 28 ns Fall Time t f 24 Between lead, Internal rain Inductance L 4. 6 mm (0.2") from package and center of nh G Internal Source Inductance L S die contact 7. Gate Input Resistance R g f = 1 MHz, open drain rainsource Body iode Characteristics Continuous Sourcerain iode Current I MOSFET symbol S 6. showing the integral reverse G Pulsed iode Forward Current a I SM p n junction diode 26 Body iode Voltage V S T J = 2 C, I S = 6., = 0 V b 6. V Body iode Reverse Recovery Time t rr ns Body iode Reverse Recovery Charge Q rr T J = 2 C, I F = 6., di/dt = 100 /μs b μc Forward TurnOn Time t on Intrinsic turnon time is negligible (turnon is dominated by L S and L ) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 μs; duty cycle 2 %. S S S16074Rev., 02May16 ocument Number: 9108

3 IRF9630S, SiHF9630S TYPICL CHRCTERISTICS (2 C, unless otherwise noted) I, rain Current () 9108_ Top 1 V 10 V 8.0 V 7.0 V 6.0 V. V.0 V Bottom 4. V V 20 µs Pulse Width T C = 2 C, raintosource Voltage (V) R S(on), raintosource On Resistance (Normalized) 9108_ I = 6. = 10 V T J, Junction Temperature ( C) Fig. 1 Typical Output Characteristics, T C = 2 C Fig. 4 Normalized OnResistance vs. Temperature I, rain Current () 9108_ Top Bottom 1 V 10 V 8.0 V 7.0 V 6.0 V. V.0 V 4. V µs Pulse Width T C = 10 C, raintosource Voltage (V) 4. V Capacitance (pf) 9108_ = 0 V, f = 1 MHz C iss = C gs + C gd, C ds Shorted C rss = C gd C oss = C ds + C gd, raintosource Voltage (V) C iss C oss C rss Fig. 2 Typical Output Characteristics, T C = 10 C Fig. Typical Capacitance vs. raintosource Voltage I, rain Current () 9108_ C 10 C 20 µs Pulse Width = 0 V , GatetoSource Voltage (V), GatetoSource Voltage (V) 9108_ I = 6. = 40 V = 100 V = 160 V For test circuit see figure Q G, Total Gate Charge (nc) Fig. 3 Typical Transfer Characteristics Fig. 6 Typical Gate Charge vs. GatetoSource Voltage S16074Rev., 02May16 ocument Number: 9108

4 IRF9630S, SiHF9630S I S, Reverse rain Current () 9108_ C 2 C = 0 V V S, Sourcetorain Voltage (V) I, rain Current () 9108_ T C, Case Temperature ( C) 10 Fig. 7 Typical Sourcerain iode Forward Voltage Fig. 9 Maximum rain Current vs. Case Temperature I, rain Current () 9108_ Operation in this area limited by R S(on) 1 T C = 2 C T J = 10 C Single Pulse 2 10 µs 100 µs 1 ms, raintosource Voltage (V) 10 ms R g 10 V Pulse width 1 µs uty factor 0.1 % R.U.T. V + Fig. 10a Switching Time Test Circuit 10 % t d(on) t r t d(off) t f Fig. 8 Maximum Safe Operating rea 90 % Fig. 10b Switching Time Waveforms 10 Thermal Response (Z thjc ) = Single Pulse (Thermal Response) P M t 1 t 2 Notes: 1. uty Factor, = t 1 /t 2 2. Peak T j = P M x Z thjc + T C 9108_11 t 1, Rectangular Pulse uration (s) Fig. 11 Maximum Effective Transient Thermal Impedance, JunctiontoCase S16074Rev., 02May16 ocument Number: 9108

5 IRF9630S, SiHF9630S L Vary t p to obtain required I S 10 V Q G R g.u.t. Q GS Q G + V 10 V t p I S 0.01 Ω V G Charge Fig. 12a Unclamped Inductive Test Circuit Fig. 13a Basic Gate Charge Waveform I S Current regulator Same type as.u.t. 0 kω 12 V 0.2 µf 0.3 µf V.U.T. t p + 3 m E S, Single Pulse Energy (mj) 9108_12c Fig. 12b Unclamped Inductive Waveforms Top Bottom I V = 0 V Starting T J, Junction Temperature ( C) Fig. 13b Gate Charge Test Circuit I G I Current sampling resistors Fig. 12c Maximum valanche Energy vs. rain Current S16074Rev., 02May16 ocument Number: 9108

6 + IRF9630S, SiHF9630S Peak iode Recovery dv/dt Test Circuit.U.T. + Circuit layout considerations Low stray inductance Ground plane Low leakage inductance current transformer + R g dv/dt controlled by R g I S controlled by duty factor.u.t. device under test + V Note Compliment NChannel of.u.t. for driver river gate drive P.W. Period = P.W. Period = 10 V a.u.t. l S waveform Reverse recovery current Reapplied voltage Body diode forward current di/dt.u.t. waveform iode recovery dv/dt Body diode forward drop Inductor current V Ripple % Note a. = V for logic level and 3 V drive devices Fig. 14 For PChannel I S S16074Rev., 02May16 ocument Number: 9108

7 Package Information TO263B (HIGH VOLTGE) (atum ) 3 4 E 4 L1 4 H 1 2 C 3 C L2 B B etail c2 B Gauge plane 0 to 8 L3 L L4 etail Rotated 90 CW scale 8:1 H 1 B Seating plane 2 x b2 2 x e 2 x b M M B Plating b1, b3 c ± M B Base metal E 1 4 (c) c1 Lead tip (b, b2) Section B B and C C Scale: none E1 View 4 MILLIMETERS INCHES MILLIMETERS INCHES IM. MIN. MX. MIN. MX. IM. MIN. MX. MIN. MX E b E b e 2.4 BSC BSC b H b L c L c L c L3 0.2 BSC BSC L ECN: S82110Rev., 1Sep08 WG: 970 Notes 1. imensioning and tolerancing per SME Y14.M imensions are shown in millimeters (inches). 3. imension and E do not include mold flash. Mold flash shall not exceed mm (0.00") per side. These dimensions are measured at the outmost extremes of the plastic body at datum. 4. Thermal P contour optional within dimension E, L1, 1 and E1.. imension b1 and c1 apply to base metal only. 6. atum and B to be determined at datum plane H. 7. Outline conforms to JEEC outline to TO263B. ocument Number: Revision: 1Sep08 1

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