Power MOSFET. Package DPAK (TO-252) DPAK (TO-252) IPAK (TO-251) Lead (Pb)-free and Halogen-free SiHFR9210-GE3 SiHFR9210TR-GE3 SiHFU9210-GE3

Transcription

1 Power MOSFET PROUCT SUMMRY V S (V) R S(on) ( ) V GS = - 10 V 3.0 Q g (Max.) (nc) 8.9 Q gs (nc) 2.1 Q gd (nc) 3.9 Configuration Single PK (TO-252) G S IPK (TO-251) G S G S P-Channel MOSFET FETURES ynamic dv/dt Rating Repetitive valanche Rated Surface Mount (IRFR9210, SiHFR9210) Straight Lead (IRFU9210, SiHFU9210) vailable in Tape and Reel P-Channel Fast Switching Material categorization: For definitions of compliance please see ESCRIPTION The power MOSFETs technology is the key to Vishay s advanced line of Power MOSFET transistors. The efficient geometry and unique processing of the Power MOSFET design achieve very low on-state resistance combined with high transconductance and extreme device ruggedness. The PK is designed for surface mounting using vapor phase, infrared, or wave soldering techniques. The straight lead version (IRFU, SiHFU series) is for through-hole mounting applications. Power dissipation levels up to 1.5 W are possible in typical surface mount applications. ORERING INFORMTION Package PK (TO-252) PK (TO-252) IPK (TO-251) Lead (Pb)-free and Halogen-free SiHFR9210-GE3 SiHFR9210TR-GE3 SiHFU9210-GE3 Lead (Pb)-free Note a. See device orientation. IRFR9210PbF IRFR9210TRPbF a IRFU9210PbF SiHFR9210-E3 SiHFR9210T-E3 a SiHFU9210-E3 BSOLUTE MXIMUM RTINGS (T C = 25 C, unless otherwise noted) PRMETER SYMBOL LIMIT UNIT rain-source Voltage V S V Gate-Source Voltage V GS ± 20 Continuous rain Current V GS at - 10 V T C = 25 C I T C = 100 C Pulsed rain Current a I M Linear erating Factor 0.20 Linear erating Factor (PCB Mount) e W/ C Single Pulse valanche Energy b E S 300 mj Repetitive valanche Current a I R Repetitive valanche Energy a E R 2.5 mj Maximum Power issipation T C = 25 C 25 P Maximum Power issipation (PCB Mount) e T = 25 C 2.5 W Peak iode Recovery dv/dt c dv/dt V/ns Operating Junction and Storage Temperature Range T J, T stg - 55 to Soldering Recommendations (Peak Temperature) d for 10 s 260 C Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. V = - 50 V, starting T J = 25 C, L = 124 mh, R g = 25, I S = (see fig. 12). c. I S - 1.9, di/dt 70 /μs, V V S, T J 150 C. d. 1.6 mm from case. e. When mounted on 1" square PCB (FR-4 or G-10 material). S Rev. C, 04-Feb-13 1 ocument Number: 91281

2 THERML RESISTNCE RTINGS PRMETER SYMBOL MIN. TYP. MX. UNIT Maximum Junction-to-mbient R thj Maximum Junction-to-mbient (PCB Mount) a R thj Maximum Junction-to-Case (rain) R thjc Note a. When mounted on 1" square PCB (FR-4 or G-10 material). SPECIFICTIONS (T J = 25 C, unless otherwise noted) PRMETER SYMBOL TEST CONITIONS MIN. TYP. MX. UNIT Static rain-source Breakdown Voltage V S V GS = 0 V, I = μ V V S Temperature Coefficient V S /T J Reference to 25 C, I = - 1 m V/ C Gate-Source Threshold Voltage V GS(th) V S = V GS, I = μ V Gate-Source Leakage I GSS V GS = ± 20 V - - ± 100 n V S = V, V GS = 0 V Zero Gate Voltage rain Current I SS V S = V, V GS = 0 V, T J = 125 C μ rain-source On-State Resistance R S(on) V GS = - 10 V I = b Forward Transconductance g fs V S = - 50 V, I = S ynamic Input Capacitance C iss V GS = 0 V, Output Capacitance C oss V S = - 25 V, pf Reverse Transfer Capacitance C rss f = 1.0 MHz, see fig Total Gate Charge Q g Gate-Source Charge Q gs I V GS = - 10 V = - 1.3, V S = V, see fig. 6 and 13 b nc Gate-rain Charge Q gd Turn-On elay Time t d(on) Rise Time t r V = V, I = - 2.3, Turn-Off elay Time t d(off) R g = 24, R = 41, see fig. 10 b ns Fall Time t f Between lead, Internal rain Inductance L mm (0.25") from package and center of nh G Internal Source Inductance L S die contact rain-source Body iode Characteristics MOSFET symbol Continuous Source-rain iode Current I S showing the integral reverse G Pulsed iode Forward Current a I SM p - n junction diode Body iode Voltage V S T J = 25 C, I S = - 1.9, V GS = 0 V b V Body iode Reverse t rr ns Recovery Time T J = 25 C, I F = - 2.3, di/dt = 100 /μs b Body iode Reverse Recovery Charge Q rr μc Forward Turn-On Time t on Intrinsic turn-on time is negligible (turn-on is dominated by L S and L ) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 μs; duty cycle 2 %. S S C/W S Rev. C, 04-Feb-13 2 ocument Number: 91281

3 TYPICL CHRCTERISTICS (25 C, unless otherwise noted) Fig. 1 - Typical Output Characteristics, T C = 25 C Fig. 3 - Typical Transfer Characteristics Fig. 2 - Typical Output Characteristics, T C = 150 C Fig. 4 - Normalized On-Resistance vs. Temperature S Rev. C, 04-Feb-13 3 ocument Number: 91281

4 Fig. 5 - Typical Capacitance vs. rain-to-source Voltage Fig. 7 - Typical Source-rain iode Forward Voltage Fig. 6 - Typical Gate Charge vs. Gate-to-Source Voltage Fig. 8 - Maximum Safe Operating rea S Rev. C, 04-Feb-13 4 ocument Number: 91281

5 + - R V S R g V GS.U.T. V - 10 V Pulse width 1 µs uty factor 0.1 % Fig. 10a - Switching Time Test Circuit V GS 10 % t d(on) t r t d(off) t f Fig. 9 - Maximum rain Current vs. Case Temperature 90 % V S Fig. 10b - Switching Time Waveforms Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case S Rev. C, 04-Feb-13 5 ocument Number: 91281

6 Vary t p to obtain required I S V S L I S R g.u.t. V S + - V I S V - 10 V t p 0.01 Ω t p V S Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms Fig. 12c - Maximum valanche Energy vs. rain Current Current regulator Same type as.u.t V Q G 12 V 0.2 µf 50 kω 0.3 µf Q GS Q G.U.T. - + V S V G V GS Charge Fig. 13a - Basic Gate Charge Waveform - 3 m Fig. 13b - Gate Charge Test Circuit I G I Current sampling resistors S Rev. C, 04-Feb-13 6 ocument Number: 91281

7 + - Peak iode Recovery dv/dt Test Circuit.U.T. + Circuit layout considerations Low stray inductance Ground plane Low leakage inductance current transformer R g dv/dt controlled by R g I S controlled by duty factor.u.t. - device under test + - V Note Compliment N-Channel of.u.t. for driver river gate drive P.W. Period = P.W. Period V GS = - 10 V a.u.t. l S waveform Reverse recovery current Re-applied voltage Body diode forward current di/dt.u.t. V S waveform iode recovery dv/dt Body diode forward drop Inductor current V Ripple 5 % Note a. V GS = - 5 V for logic level and - 3 V drive devices Fig For P-Channel I S maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see S Rev. C, 04-Feb-13 7 ocument Number: 91281

8 Package Information TO-252 Case Outline E b3 C2 MILLIMETERS INCHES IM. MIN. MX. MIN. MX. L b b H b C C b e1 e b2 L4 L5 gage plane height (0.5 mm) C 1 L E E H e 2.28 BSC BSC e BSC BSC L L L L E1 ECN: T Rev. P, 16-May-16 WG: 5347 Notes imension L3 is for reference only. Revision: 16-May-16 1 ocument Number: For technical questions, contact: pmostechsupport@vishay.com

9 Package Information TO-251 (HIGH VOLTGE) 4 E1 Thermal P 1 4 (atum ) L1 5 L3 θ2 3 E 4 b4 C C M C B L2 4 B 3 θ1 c2 C Seating plane B B L View - 3 x b2 3 x b 2 x e M C B c 1 Lead tip Plating (c) 5 b1, b3 Base metal c1 5 (b, b2) Section B - B and C - C MILLIMETERS INCHES MILLIMETERS INCHES IM. MIN. MX. MIN. MX. IM. MIN. MX. MIN. MX E b E b e 2.29 BSC 2.29 BSC b L b L b L c L c θ1 0' 15' 0' 15' c θ2 25' 35' 25' 35' ECN: S Rev., 15-Sep-08 WG: 5968 Notes 1. imensioning and tolerancing per SME Y14.5M imension are shown in inches and millimeters. 3. imension and E do not include mold flash. Mold flash shall not exceed 0.13 mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body. 4. Thermal pad contour optional with dimensions b4, L2, E1 and Lead dimension uncontrolled in L3. 6. imension b1, b3 and c1 apply to base metal only. 7. Outline conforms to JEEC outline TO-251. ocument Number: Revision: 15-Sep-08 1

10 pplication Note 826 RECOMMENE MINIMUM PS FOR PK (TO-252) (5.690) (2.286) (2.202) (10.668) (6.180) (4.572) (1.397) Recommended Minimum Pads imensions in Inches/(mm) Return to Index Return to Index PPLICTION NOTE ocument Number: Revision: 21-Jan-08 3

11 Legal isclaimer Notice Vishay isclaimer LL PROUCT, PROUCT SPECIFICTIONS N T RE SUBJECT TO CHNGE WITHOUT NOTICE TO IMPROVE RELIBILITY, FUNCTION OR ESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. ll operating parameters, including typical parameters, must be validated for each customer application by the customer s technical experts. Product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners VISHY INTERTECHNOLOGY, INC. LL RIGHTS RESERVE Revision: 08-Feb-17 1 ocument Number: 91000