Power MOSFET. IRFP450PbF SiHFP450-E3 IRFP450 SiHFP450. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 500 V Gate-Source Voltage V GS ± 20

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1 Power MOFET PROUCT UMMRY V (V) 500 R (on) (Ω) V G = 10 V 0.40 Q g (Max.) (nc) 150 Q gs (nc) 20 Q gd (nc) 80 Configuration ingle TO-247 G ORERING INFORMTION Package Lead (Pb)-free npb G N-Channel MOFET FETURE ynamic dv/dt Rating Repetitive valanche Rated Isolated Central Mounting Hole Fast witching Ease of Paralleling imple rive Requirements Lead (Pb)-free vailable vailable RoH* COMPLINT ECRIPTION Third generation Power MOFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-247 package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220 devices. The TO-247 is similar but superior to the earlier TO-218 package because its isolated mounting hole. It also provides greater creepage distances between pins to meet the requirements of most safety specifications. TO-247 IRFP450PbF ihfp450-e3 IRFP450 ihfp450 BOLUTE MXIMUM RTING T C = 25 C, unless otherwise noted PRMETER YMBOL LIMIT UNIT rain-ource Voltage V 500 V Gate-ource Voltage V G ± 20 Continuous rain Current V G at 10 V T C = 25 C 14 I T C = 100 C 8.7 Pulsed rain Current a I M 56 Linear erating Factor 1.5 W/ C ingle Pulse valanche Energy b E 760 mj Repetitive valanche Current a I R 8.7 Repetitive valanche Energy a E R 19 mj Maximum Power issipation T C = 25 C P 190 W Peak iode Recovery dv/dt c dv/dt 3.5 V/ns Operating Junction and torage Temperature Range T J, T stg - 55 to 150 oldering Recommendations (Peak Temperature) for 10 s 300 d C Mounting Torque 6-32 or M3 screw Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. V = 50 V, starting T J = 25 C, L = 7.0 mh, R G = 25 Ω, I = 14 (see fig. 12). c. I 14, di/dt 130 /µs, V V, T J 150 C. d. 1.6 mm from case. * Pb containing terminations are not RoH compliant, exemptions may apply 10 lbf in 1.1 N m ocument Number: Rev., 16-Jun-08 1

2 THERML REITNCE RTING PRMETER YMBOL TYP. MX. UNIT Maximum Junction-to-mbient R thj - 40 Case-to-ink, Flat, Greased urface R thc C/W Maximum Junction-to-Case (rain) R thjc PECIFICTION T J = 25 C, unless otherwise noted PRMETER YMBOL TET CONITION MIN. TYP. MX. UNIT tatic rain-ource Breakdown Voltage V V G = 0 V, I = 250 µ V V Temperature Coefficient ΔV /T J Reference to 25 C, I = 1 m V/ C Gate-ource Threshold Voltage V G(th) V = V G, I = 250 µ V Gate-ource Leakage I G V G = ± 20 V - - ± 100 n V = 500 V, V G = 0 V Zero Gate Voltage rain Current I V = 400 V, V G = 0 V, T J = 125 C µ rain-ource On-tate Resistance R (on) V G = 10 V I = 8.4 b Ω Forward Transconductance g fs V = 50 V, I = 8.4 b ynamic Input Capacitance C iss V G = 0 V, Output Capacitance C oss V = 25 V, pf Reverse Transfer Capacitance C rss f = 1.0 MHz, see fig Total Gate Charge Q g Gate-ource Charge Q gs I V G = 10 V = 14, V = 400 V, see fig. 6 and 13 b nc Gate-rain Charge Q gd Turn-On elay Time t d(on) Rise Time t r V = 250 V, I = 14, Turn-Off elay Time t d(off) R G = 6.2 Ω, R = 17 Ω, see fig. 10 b ns Fall Time t f Internal rain Inductance L Between lead, mm (0.25") from package and center of nh G Internal ource Inductance L die contact rain-ource Body iode Characteristics MOFET symbol Continuous ource-rain iode Current I showing the integral reverse G Pulsed iode Forward Current a I M p - n junction diode Body iode Voltage V T J = 25 C, I = 14, V G = 0 V b V Body iode Reverse t rr ns Recovery Time T J = 25 C, I F = 14, di/dt = 100 /µs b Body iode Reverse Recovery Charge Q rr µc Forward Turn-On Time t on Intrinsic turn-on time is negligible (turn-on is dominated by L and L ) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 µs; duty cycle 2 %. ocument Number: Rev., 16-Jun-08

3 TYPICL CHRCTERITIC 25 C, unless otherwise noted Fig. 1 - Typical Output Characteristics, T C = 25 C Fig. 3 - Typical Transfer Characteristics Fig. 2 - Typical Output Characteristics, T C = 150 C Fig. 4 - Normalized On-Resistance vs. Temperature ocument Number: Rev., 16-Jun-08 3

4 Fig. 5 - Typical Capacitance vs. rain-to-ource Voltage Fig. 7 - Typical ource-rain iode Forward Voltage Fig. 6 - Typical Gate Charge vs. Gate-to-ource Voltage Fig. 8 - Maximum afe Operating rea ocument Number: Rev., 16-Jun-08

5 V R R G V G.U.T. - V 10 V Pulse width 1 µs uty factor 0.1 % Fig. 10a - witching Time Test Circuit V 90 % 10 % V G t d(on) t r t d(off) t f Fig. 9 - Maximum rain Current vs. Case Temperature Fig. 10b - witching Time Waveforms Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case L V Vary t p to obtain required I V t p V R G I.U.T - V V 10 V t p 0.01 Ω I Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms ocument Number: Rev., 16-Jun-08 5

6 Fig. 12c - Maximum valanche Energy vs. rain Current Current regulator ame type as.u.t. 10 V Q G 12 V 0.2 µf 50 kω 0.3 µf Q G Q G.U.T. V - V G V G Charge Fig. 13a - Basic Gate Charge Waveform 3 m Fig. 13b - Gate Charge Test Circuit I G I Current sampling resistors ocument Number: Rev., 16-Jun-08

7 Peak iode Recovery dv/dt Test Circuit.U.T - Circuit layout considerations Low stray inductance Ground plane Low leakage inductance current transformer - - R G dv/dt controlled by R G river same type as.u.t. I controlled by duty factor "".U.T. - device under test - V river gate drive P.W. Period = P.W. Period V G = 10 V*.U.T. I waveform Reverse recovery current Re-applied voltage Body diode forward current di/dt.u.t. V waveform iode recovery dv/dt Inductor current Body diode forward drop V Ripple 5 % I * V G = 5 V for logic level devices Fig For N-Channel maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for ilicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see ocument Number: Rev., 16-Jun-08 7

8 Package Information TO-247C (HIGH VOLTGE) 3 B R/2 Q 4 E E/2 2 7 ØP (atum B) Ø k M B M ØP1 2 2 x R (2) Thermal pad 4 5 L1 C L ee view B 5 E M B M 2 x b2 3 x b 0.10 M C M b4 2 x e 1 C Planting View - (b1, b3, b5) Base metal E E C C (c) c1 View B (b, b2, b4) (4) ection C - C, -, E - E MILLIMETER INCHE MILLIMETER INCHE IM. MIN. MX. MIN. MX. IM. MIN. MX. MIN. MX E E b e 5.46 BC BC b Ø k b L b L b N 7.62 BC BC b Ø P c Ø P c Q R BC BC ECN: Rev., 15-ep-08 WG: 5971 Notes 1. imensioning and tolerancing per ME Y14.5M Contour of slot optional. 3. imension and E do not include mold flash. Mold flash shall not exceed mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body. 4. Thermal pad contour optional with dimensions 1 and E1. 5. Lead finish uncontrolled in L1. 6. Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.154"). 7. Outline conforms to JEEC outline TO-247 with exception of dimension c. ocument Number: Revision: 15-ep-08 1

9 Legal isclaimer Notice Vishay isclaimer LL PROUCT, PROUCT PECIFICTION N T RE UBJECT TO CHNGE WITHOUT NOTICE TO IMPROVE RELIBILITY, FUNCTION OR EIGN OR OTHERWIE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. tatements regarding the suitability of products for certain types of applications are based on Vishay s knowledge of typical requirements that are often placed on Vishay products in generic applications. uch statements are not binding statements about the suitability of products for a particular application. It is the customer s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and/or specifications may vary in different applications and performance may vary over time. ll operating parameters, including typical parameters, must be validated for each customer application by the customer s technical experts. Product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk and agree to fully indemnify and hold Vishay and its distributors harmless from and against any and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that Vishay or its distributor was negligent regarding the design or manufacture of the part. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Material Category Policy Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoH-Compliant fulfill the definitions and restrictions defined under irective 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant. Please note that some Vishay documentation may still make reference to RoH irective 2002/95/EC. We confirm that all the products identified as being compliant to irective 2002/95/EC conform to irective 2011/65/EU. Revision: 12-Mar-12 1 ocument Number: 91000