Power MOSFET FEATURES. IRFP064PbF SiHFP064-E3 IRFP064 SiHFP064 T C = 25 C

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1 Power MOFET PRODUCT UMMRY (V) 60 R D(on) (Ω) V G = 10 V Q g (Max.) (nc) 190 Q gs (nc) 55 Q gd (nc) 90 Configuration ingle TO-27C G D ORDERING INFORMTION Package Lead (Pb)-free npb G D N-Channel MOFET FETURE Dynamic dv/dt Rating Repetitive valanche Rated Ultra Low On- Resistance Very Low Thermal Resistance Isolated Central Mounting Hole 175 C Operating Temperature Fast witching Compliant to RoH Directive 2002/95/EC vailable RoH* COMPLINT DECRIPTION Third generation Power MOFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-27C package is preferred for commercial-industrial applications where higher power levels preclude the use of TO-220B devices. The TO-27C is similar but superior to the earlier TO-218 package because its isolated mounting hole. It also provides greater creepage distances between pins to meet the requirements of most safety specifications. TO-27C IRFP06PbF ihfp06-e3 IRFP06 ihfp06 BOLUTE MXIMUM RTING (T C = 25 C, unless otherwise noted) PRMETER YMBOL LIMIT UNIT Drain-ource Voltage 60 Gate-ource Voltage V G ± 20 V Continuous Drain Current e V G at 10 V T C = 25 C 70 I D T C = 100 C 70 Pulsed Drain Current a I DM 520 Linear Derating Factor 2.0 W/ C ingle Pulse valanche Energy b E 1000 mj Repetitive valanche Current a I R 70 Repetitive valanche Energy a E R 30 mj Maximum Power Dissipation T C = 25 C P D 300 W Peak Diode Recovery dv/dt c dv/dt.5 V/ns Operating Junction and torage Temperature Range T J, T stg - 55 to 175 oldering Recommendations (Peak Temperature) d for 10 s 300 C Mounting Torque 6-32 or M3 screw 10 lbf in 1.1 N m Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. V DD = 25 V, starting T J = 25 C, L = 69 μh, R g = 25 Ω, I = 130 (see fig. 12). c. I D 130, di/dt 300 /μs, V DD, T J 175 C. d. 1.6 mm from case. e. Current limited by the package (die current = 130 ). * Pb containing terminations are not RoH compliant, exemptions may apply Document Number: Rev. C, 1-Mar-11 1

2 THERML REITNCE RTING PRMETER YMBOL TYP. MX. UNIT Maximum Junction-to-mbient R thj - 0 Case-to-ink, Flat, Greased urface R thc C/W Maximum Junction-to-Case (Drain) R thjc PECIFICTION (T J = 25 C, unless otherwise noted) PRMETER YMBOL TET CONDITION MIN. TYP. MX. UNIT tatic Drain-ource Breakdown Voltage V G = 0 V, I D = 250 μ V Temperature Coefficient Δ /T J Reference to 25 C, I D = 1 m V/ C Gate-ource Threshold Voltage V G(th) = V G, I D = 250 μ V Gate-ource Leakage I G V G = ± 20 V - - ± 100 n = 60 V, V G = 0 V Zero Gate Voltage Drain Current I D = 8 V, V G = 0 V, T J = 150 C μ Drain-ource On-tate Resistance R D(on) V G = 10 V I D = 78 b Ω Forward Transconductance g fs = 25 V, I D = 78 b Dynamic Input Capacitance C iss V G = 0 V, Output Capacitance C oss = 25 V, pf Reverse Transfer Capacitance C rss f = 1.0 MHz, see fig Total Gate Charge Q g Gate-ource Charge Q gs I V G = 10 V D = 130, = 8 V, see fig. 6 and 13 b nc Gate-Drain Charge Q gd Turn-On Delay Time t d(on) Rise Time t r V DD = 30 V, I D = 130, Turn-Off Delay Time t d(off) R g =.3 Ω, R D = 0.22 Ω, see fig. 10 b ns Fall Time t f D Internal Drain Inductance L Between lead, D mm (0.25") from package and center of nh G Internal ource Inductance L die contact Drain-ource Body Diode Characteristics Continuous ource-drain Diode Current I MOFET symbol c D showing the integral reverse Pulsed Diode Forward Current a G I M p - n junction diode Body Diode Voltage V D T J = 25 C, I = 130, V G = 0 V b V Body Diode Reverse Recovery Time t rr T J = 25 C, I F = 130, di/dt = 100 /μs b ns Body Diode Reverse Recovery Charge Q rr μc Forward Turn-On Time t on Intrinsic turn-on time is negligible (turn-on is dominated by L and L D ) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 μs; duty cycle 2 %. c. Current limited by the package (die current = 130 ). Document Number: Rev. C, 1-Mar-11

3 TYPICL CHRCTERITIC (25 C, unless otherwise noted) Fig. 1 - Typical Output Characteristics, T C = 25 C Fig. 3 - Typical Transfer Characteristics Fig. 2 - Typical Output Characteristics, T C = 175 C Fig. - Normalized On-Resistance vs. Temperature Document Number: Rev. C, 1-Mar-11 3

4 Fig. 5 - Typical Capacitance vs. Drain-to-ource Voltage Fig. 7 - Typical ource-drain Diode Forward Voltage Fig. 6 - Typical Gate Charge vs. Gate-to-ource Voltage Fig. 8 - Maximum afe Operating rea Document Number: Rev. C, 1-Mar-11

5 R D R G V G D.U.T. - V DD 10 V Pulse width 1 µs Duty factor 0.1 % Fig. 10a - witching Time Test Circuit 90 % 10 % V G t d(on) t r t d(off) t f Fig. 9 - Maximum Drain Current vs. Case Temperature Fig. 10b - witching Time Waveforms Fig Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: Rev. C, 1-Mar-11 5

6 Vary t p to obtain required I R G L D.U.T. I - V DD t p V DD 10 V t p 0.01 Ω I Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms Fig. 12c - Maximum valanche Energy vs. Drain Current Current regulator ame type as D.U.T. 10 V Q G 12 V 0.2 µf 50 kω 0.3 µf Q G Q GD D.U.T. V - D V G V G Charge Fig. 13a - Basic Gate Charge Waveform 3 m Fig. 13b - Gate Charge Test Circuit I G I D Current sampling resistors Document Number: Rev. C, 1-Mar-11

7 Peak Diode Recovery dv/dt Test Circuit D.U.T. - Circuit layout considerations Low stray inductance Ground plane Low leakage inductance current transformer - - R g dv/dt controlled by R g Driver same type as D.U.T. I D controlled by duty factor D D.U.T. - device under test - V DD Driver gate drive P.W. Period D = P.W. Period V G = 10 V a D.U.T. l D waveform Reverse recovery current Body diode forward current di/dt D.U.T. waveform Diode recovery dv/dt V DD Re-applied voltage Inductor current Body diode forward drop Ripple 5 % I D Note a. V G = 5 V for logic level devices Fig. 1 - For N-Channel maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for ilicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see Document Number: Rev. C, 1-Mar-11 7

8 TO-27C (High Voltage) Package Information 3 B R/2 Q E E/2 2 7 ØP (Datum B) Ø k M D B M ØP1 D2 2 x R (2) D D D Thermal pad 5 L1 C 2 x b2 3 x b 0.10 M C M b Lead ssignments 1. Gate 2. Drain 3. ource. Drain 2 x e L ee view B 1 C DDE (b, b2, b) () ection C - C, D - D, E - E MILLIMETER INCHE MILLIMETER INCHE DIM. MIN. MX. MIN. MX. DIM. MIN. MX. MIN. MX D E E b e 5.6 BC BC b Ø k b L b L b N 7.62 BC BC b Ø P c Ø P c Q D R D BC BC ECN: X Rev. D, 01-Jul-13 DWG: 5971 Notes 1. Dimensioning and tolerancing per ME Y1.5M Contour of slot optional. 3. Dimension D and E do not include mold flash. Mold flash shall not exceed mm (0.005") per side. These dimensions are measured at the outermost extremes of the plastic body.. Thermal pad contour optional with dimensions D1 and E1. 5. Lead finish uncontrolled in L1. 6. Ø P to have a maximum draft angle of 1.5 to the top of the part with a maximum hole diameter of 3.91 mm (0.15"). 7. Outline conforms to JEDEC outline TO-27 with exception of dimension c. 8. Xian and Mingxin actually photo. E View B C C Planting (c) E M D B M View - (b1, b3, b5) Base metal c1 Revision: 01-Jul-13 1 Document Number: For technical questions, contact: hvm@vishay.com THI DOCUMENT I UBJECT TO CHNGE WITHOUT NOTICE. THE PRODUCT DECRIBED HEREIN ND THI DOCUMENT RE UBJECT TO PECIFIC DICLIMER, ET FORTH T

9 Legal Disclaimer Notice Vishay Disclaimer LL PRODUCT, PRODUCT PECIFICTION ND DT RE UBJECT TO CHNGE WITHOUT NOTICE TO IMPROVE RELIBILITY, FUNCTION OR DEIGN OR OTHERWIE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. tatements regarding the suitability of products for certain types of applications are based on Vishay s knowledge of typical requirements that are often placed on Vishay products in generic applications. uch statements are not binding statements about the suitability of products for a particular application. It is the customer s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. ll operating parameters, including typical parameters, must be validated for each customer application by the customer s technical experts. Product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners VIHY INTERTECHNOLOGY, INC. LL RIGHT REERVED Revision: 08-Feb-17 1 Document Number: 91000