Power MOSFET. IRFD9010PbF SiHFD9010-E3 IRFD9010 SiHFD9010
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1 IRF9, ihf9 Power MOFET PROUCT UMMARY (V) 5 R (on) (Ω) = V.5 Q g (Max.) (nc) Q gs (nc) 3. Q gd (nc). Configuration ingle HVMIP G G PChannel MOFET ORERING INFORMATION Package Lead (Pb)free npb FEATURE For Automatic Insertion Compact, End tackable Fast witching Low rive Current Easy Paralleled Excellent Temperature tability PChannel Versatility Compliant to RoH irective 22/95/EC ECRIPTION The HVMIP technology is the key to Vishay s advanced line of power MOFET transistors. The efficient geometry and unique processing of the HVMIP design achieves very low onstate resistance combined with high transconductance and extreme device ruggedness. The pchannel HVMIPs are designed for application which require the convenience of reverse polarity operation. They retain all of the features of the more common nchannel HVMIPs such as voltage control, very fast switching, ease of paralleling, and excellent temperature stability. Pchannels HVMIPs are intended for use in power stages where complementary symmetry with nchannel devices offers circuit simplification. They are also very useful in drive stages because of the circuit versatility offered by the reverse polarity connection. Applications include motor control, audio amplifiers, switched mode converters, control circuits and pulse amplifiers. HVMIP IRF9PbF ihf9e3 IRF9 ihf9 ABOLUTE MAXIMUM RATING (T C = 25 C, unless otherwise noted) PARAMETER YMBOL LIMIT UNIT rainource Voltage 5 V Gateource Voltage ± 2 T C = 25 C. Continuous rain Current at V T C = C. A Pulsed rain Current a M. Linear erating Factor. W/ C Inductive Current, Clamped L = µh see fig. I LM. A Inductive Current, Unclamped (Avalanche Current) see fig. 5 I L.5 Maximum Power issipation T C = 25 C P W Operating Junction and torage Temperature Range, T stg 55 to 5 C oldering Recommendations (Peak Temperature) for s 3 d Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. ). b. = 25 V, starting = 25 C, L = 52 mh, R g = 25 Ω, I A = 2. A (see fig. 2). c. I. A, di/dt 75 A/μs,, 75 C. d.. mm from case. * Pb containing terminations are not RoH compliant, exemptions may apply ocument Number: Rev. A, 2Apr
2 IRF9, ihf9 THERMAL REITANCE RATING PARAMETER YMBOL TYP. MAX. UNIT Maximum JunctiontoAmbient R thja 2 C/W PECIFICATION ( = 25 C, unless otherwise noted) PARAMETER YMBOL TET CONITION MIN. TYP. MAX. UNIT tatic rainource Breakdown Voltage = V, = 25 μa 5 V Temperature Coefficient Δ / Reference to 25 C, = ma.9 V/ C Gateource Threshold Voltage (th) =, = 25 μa 2.. V Gateource Leakage I G = ± 2 V ± 5 na = 5 V, = V 25 Zero Gate Voltage rain Current = V, = V, = 25 C μa Ontate rain Current (on) = V > (on) x R (on) max.. A rainource Ontate Resistance R (on) = V =.5 A b.35.5 Ω Forward Transconductance g fs = 2 V, = 2. A ynamic Input Capacitance C iss = V, 2 Output Capacitance C oss = 25 V, pf Reverse Transfer Capacitance C rss f =. MHz, see fig. 5 3 Total Gate Charge Q g 7.2 Gateource Charge Q gs I = V =.7 A, =. V see fig. and 3 b nc Gaterain Charge Q gd 2.7. TurnOn elay Time t d(on). 9.2 Rise Time t r = 25 V, =.7 A 7 7 R g = 2 Ω, R = 5. Ω, TurnOff elay Time t d(off) see fig. b 3 2 ns Fall Time t f Internal rain Inductance L Between lead,. mm (.25") from G package and center of Internal ource Inductance L die contact. nh rainource Body iode Characteristics Continuous ourcerain iode Current I MOFET symbol showing the. A Pulsed iode Forward Current a I M integral reverse p n junction diode. G Body iode Voltage V = 25 C, I =.7 A, = V b 5.5 V Body iode Reverse t rr ns Recovery Time = 25 C, I F =.7 A, di/dt = A/μs b Body iode Reverse Recovery Charge Q rr μc Forward TurnOn Time t on Intrinsic turnon time is negligible (turnon is dominated by L and L ) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. ). b. Pulse width 3 μs; duty cycle 2 %. ocument Number: Rev. A, 2Apr
3 IRF9, ihf9 TYPICAL CHARACTERITIC (25 C, unless otherwise noted) V 2 5 μs Pulse Width 5 V 7 V = V 5 V V 2 25 R (on), raintoource on Resistance (Normalized) =.7 V 2 2 = V 2, raintoource Voltage (V), Junction Temperature ( C) Fig. Typical Output Characteristics Fig. Normalized OnResistance vs. Temperature 2 μs Pulse Width V V 7 V = V 5 V Capacitance (pf) = V, f = MHz C iss = C gs C gd, C ds horted C rss = C gd C oss = C ds C gd C iss C oss C rss 2 3 V 5, raintoource Voltage (V), raintoource Voltage (V) Fig. 2 Typical Output Characteristics Fig. 5 Typical Capacitance vs. raintoource Voltage... μs Pulse Width = 2 x = 5 C 3 = 25 C, Gatetoource Voltage (V) 2 2 =.7 A 3 = V 9 For Test Circuit ee Figure 3 2 5, raintoource Voltage (V) Q g, Total Gate Charge (nc) Fig. 3 Typical Transfer Characteristics Fig. Typical Gate Charge vs. Gatetoource Voltage ocument Number: Rev. A, 2Apr 3
4 IRF9, ihf9 2. I, Reverse rain Current (A) = 5 C = 25 C V, ourcetorain Voltage (V) Fig. 7 Typical ourcerain iode Forward Voltage T C, Case Temperature ( C) Fig. 9 Maximum rain Current vs. Case Temperature Operation in this Area Limited by R (on) R. T C = 25 C = 5 C ingle Pulse., raintoource Voltage (V) μs μs ms ms ms s C Fig. Maximum afe Operating Area Pulse width µs uty factor. % Fig. a witching Time Test Circuit % R g V.U.T. t d(on) t r t d(off) t f 9 % Fig. b witching Time Waveforms ocument Number: 95 99Rev. A, 2Apr
5 IRF9, ihf9 Thermal Response (Z thjc ) ingle Pulse (Thermal Response)... P M t t 2 Notes:. uty Factor, = t /t 2 2. Peak = P M x T thjc T C t, Rectangular Pulse uration (s) Fig. Maximum Effective Transient Thermal Impedance, JunctiontoCase L Vary t p to obtain required I A V Q G R g.u.t Q G Q G V t p I A. W V G Charge Fig. 2a Unclamped Inductive Test Circuit Fig. 3a Basic Gate Charge Waveform Current regulator ame type as.u.t. I A 5 kω 2 V.2 µf.3 µf.u.t. t p 3 ma I G Current sampling resistors Fig. 2b Unclamped Inductive Waveforms Fig. 3b Gate Charge Test Circuit ocument Number: Rev. A, 2Apr 5
6 IRF9, ihf9 Peak iode Recovery dv/dt Test Circuit.U.T. Circuit layout considerations Low stray inductance Ground plane Low leakage inductance current transformer R g dv/dt controlled by R G I controlled by duty factor "".U.T. device under test Compliment NChannel of.u.t. for driver river gate drive P.W. Period = P.W. Period = V*.U.T. I waveform Reverse recovery current Reapplied voltage Body diode forward current di/dt.u.t. waveform iode recovery dv/dt Inductor current Body diode forward drop Ripple 5 % I * = 5 V for logic level and 3 V drive devices Fig. For PChannel maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for ilicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see ocument Number: 95 99Rev. A, 2Apr
7 Legal isclaimer Notice Vishay isclaimer ALL PROUCT, PROUCT PECIFICATION AN ATA ARE UBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR EIGN OR OTHERWIE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, noninfringement and merchantability. tatements regarding the suitability of products for certain types of applications are based on Vishay s knowledge of typical requirements that are often placed on Vishay products in generic applications. uch statements are not binding statements about the suitability of products for a particular application. It is the customer s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer s technical experts. Product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, lifesaving, or lifesustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. 27 VIHAY INTERTECHNOLOGY, INC. ALL RIGHT REERVE Revision: Feb7 ocument Number: 9
Power MOSFET. IRFD9010PbF SiHFD9010-E3 IRFD9010 SiHFD9010
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Power MOSFET PRODUCT SUMMARY (V) 60 R DS(on) ( ) V GS = 10 V 0.28 Q g (Max.) (nc) 19 Q gs (nc) 5.4 Q gd (nc) 11 Configuration Single S HVMDIP G S G D D PChannel MOSFET ORDERING INFORMATION Package Lead
More informationPower MOSFET FEATURES DESCRIPTION. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 60 V Gate-Source Voltage V GS ± 20 T C = 25 C
Power MOSFET PRODUCT SUMMARY (V) 60 R DS(on) () V GS = 10 V 0.10 Q g max. (nc) 25 Q gs (nc) 5.8 Q gd (nc) 11 Configuration Single D FEATURES Dynamic dv/dt rating 175 C operating temperature Fast switching
More informationPower MOSFET. IRFBG20PbF SiHFBG20-E3 IRFBG20 SiHFBG20. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 1000 V Gate-Source Voltage V GS ± 20
Power MOSFET PRODUCT SUMMARY (V) 1000 R DS(on) () V GS = 10 V 11 Q g max. (nc) 38 Q gs (nc) 4.9 Q gd (nc) 22 Configuration Single D TO220AB G S G DS NChannel MOSFET ORDERING INFORMATION Package Lead (Pb)free
More informationPower MOSFET FEATURES. IRFD120PbF SiHFD120-E3 IRFD120 SiHFD120
Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) ( ) V GS = 10 V 0.27 Q g (Max.) (nc) 16 Q gs (nc) 4.4 Q gd (nc) 7.7 Configuration Single D HVMDIP S G ORDERING INFORMATION Package Lead (Pb)-free SnPb G D
More informationPower MOSFET FEATURES DESCRIPTION. IRF720PbF SiHF720-E3 IRF720 SiHF720 T C = 25 C
Power MOSFET PRODUCT SUMMARY (V) 400 V R DS(on) (Ω) = 10 V 1.8 Q g (Max.) (nc) 0 Q gs (nc) 3.3 Q gd (nc) 11 Configuration Single TO-0AB G DS ORDERING INFORMATION Package Lead (Pb)-free SnPb G D S N-Channel
More informationPower MOSFET. IRFI740GPbF SiHFI740G-E3 IRFI740G SiHFI740G. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 400 V Gate-Source Voltage V GS ± 20
Power MOSFET PRODUCT SUMMARY (V) 400 R DS(on) () V GS = 10 V 0.55 Q g max. (nc) 66 Q gs (nc) 10 Q gd (nc) 33 Configuration Single D TO220 FULLPAK G S G D S NChannel MOSFET ORDERING INFORMATION Package
More informationPower MOSFET FEATURES. IRFP460LCPbF SiHFP460LC-E3 IRFP460LC SiHFP460LC
Power MOFET PROUCT UMMRY V (V) 500 R (on) (Ω) V G = 10 V 0.27 Q g (Max.) (nc) 120 Q gs (nc) 32 Q gd (nc) 9 Configuration ingle TO27 G ORERING INFORMTION Package Lead (Pb)free npb G NChannel MOFET FETURE
More informationPower MOSFET. IRFBC40LCPbF SiHFBC40LC-E3 IRFBC40LC SiHFBC40LC
Power MOSFET PRODUCT SUMMARY (V) 600 R DS(on) () = 10 V 1. Q g max. (nc) 39 Q gs (nc) 10 Q gd (nc) 19 Configuration Single D TO0AB G S G DS NChannel MOSFET ORDERING INFORMATION Package Lead (Pb)free SnPb
More informationPower MOSFET FEATURES. IRLD120PbF SiHLD120-E3 IRLD120 SiHLD120
Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) ( ) = 5.0 V 0.27 Q g (Max.) (nc) 12 Q gs (nc) 3.0 Q gd (nc) 7.1 Configuration Single D HVMDIP FEATURES Dynamic dv/dt Rating Repetitive Avalanche Rated For
More informationPower MOSFET FEATURES. IRF740APbF SiHF740A-E3 IRF740A SiHF740A
Power MOSFET PRODUCT SUMMARY V DS (V) 400 R DS(on) ( ) = 0 V 0.55 Q g (Max.) (nc) 36 Q gs (nc) 9.9 Q gd (nc) 6 Configuration Single D TO220AB G FEATURES Low Gate Charge Q g Results in Simple Drive Requirement
More informationPower MOSFET FEATURES DESCRIPTION. IRF840PbF SiHF840-E3 IRF840 SiHF840 T C = 25 C
Power MOSFET PRODUCT SUMMARY (V) 500 R DS(on) () = 0.85 Q g max. (nc) 63 Q gs (nc) 9.3 Q gd (nc) 32 Configuration Single D TO-220AB G G DS S N-Channel MOSFET ORDERING INFORMATION Package Lead (Pb)-free
More informationAutomotive P-Channel 30 V (D-S) 175 C MOSFET
Automotive P-Channel 3 V (-) 75 C MOFET PROUCT UMMARY V (V) - 3 R (on) () at V G = - V.3 R (on) () at V G = - 4.5 V.52 I (A) -.8 Configuration ingle FEATURE TrenchFET Power MOFET % R g and UI Tested AEC-Q
More informationPower MOSFET FEATURES. IRFPE50PbF SiHFPE50-E3 IRFPE50 SiHFPE50
Power MOSFET PRODUCT SUMMARY (V) 800 R DS(on) (Ω) V GS = 10 V 1.2 Q g (Max.) (nc) 200 Q gs (nc) 24 Q gd (nc) 110 Configuration Single TO247 S G D ORDERING INFORMATION Package Lead (Pb)free SnPb G D S NChannel
More informationPower MOSFET DESCRIPTION. IRFD9220PbF SiHFD9220-E3 IRFD9220 SiHFD9220
Power MOSFET PRODUCT SUMMARY (V) 200 R DS(on) ( ) V GS = 10 V 1.5 Q g (Max.) (nc) 15 Q gs (nc) 3.2 Q gd (nc) 8.4 Configuration Single S HVMDIP G FEATURES Dynamic dv/dt Rating Repetitive Avalanche Rated
More informationPower MOSFET FEATURES. IRLZ44PbF SiHLZ44-E3 IRLZ44 SiHLZ44 T C = 25 C
Power MOSFET PRODUCT SUMMARY (V) 60 R DS(on) (Ω) V GS = 5.0 V 0.028 Q g (Max.) (nc) 66 Q gs (nc) 12 Q gd (nc) 43 Configuration Single TO-220AB G DS ORDERING INFORMATION Package Lead (Pb)-free SnPb G D
More informationPower MOSFET FEATURES. Note * Pb containing terminations are not RoHS compliant, exemptions may apply DESCRIPTION. IRFD113PbF SiHFD113-E3
Power MOSFET PRODUCT SUMMARY V DS (V) 60 R DS(on) (Ω) V GS = 10 V 0.8 Q g (Max.) (nc) 7 Q gs (nc) 2 Q gd (nc) 7 Configuration Single D HVMDIP FEATURES For Automatic Insertion Compact Plastic Package End
More informationPower MOSFET FEATURES. IRFZ44PbF SiHFZ44-E3 IRFZ44 SiHFZ44 T C = 25 C
Power MOSFET PRODUCT SUMMARY (V) 60 R DS(on) (Ω) V GS = 10 V 0.028 Q g (Max.) (nc) 67 Q gs (nc) 18 Q gd (nc) 25 Configuration Single FEATURES Dynamic dv/dt Rating 175 C Operating Temperature Fast Switching
More informationPower MOSFET FEATURES DESCRIPTION. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS -60 V Gate-Source Voltage V GS ± 20 T A = 25 C
Power MOSFET PRODUCT SUMMARY (V) 60 R DS(on) () V GS = 10 V 0.28 Q g max. (nc) 19 Q gs (nc) 5.4 Q gd (nc) 11 Configuration Single S HVMDIP G S G D D PChannel MOSFET FEATURES Dynamic dv/dt rating Repetitive
More informationPower MOSFET FEATURES. IRFD110PbF SiHFD110-E3 IRFD110 SiHFD110
Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) ( ) = 0.54 Q g (Max.) (nc) 8.3 Q gs (nc) 2.3 Q gd (nc) 3.8 Configuration Single D FEATURES Dynamic dv/dt Rating Repetitive Avalanche Rated For Automatic Insertion
More informationPower MOSFET. Package SOT-223 SOT-223 T C = 25 C
Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) (Ω) V GS = 10 V 1.2 Q g (Max.) (nc) 8.7 Q gs (nc) 2.2 Q gd (nc) 4.1 Configuration Single S SOT223 D G G D S D PChannel MOSFET FEATURES Surface Mount Available
More informationPower MOSFET. IRFP450PbF SiHFP450-E3 IRFP450 SiHFP450. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 500 V Gate-Source Voltage V GS ± 20
Power MOSFET PRODUCT SUMMARY (V) 500 R DS(on) (Ω) V GS = 10 V 0.40 Q g (Max.) (nc) 150 Q gs (nc) 20 Q gd (nc) 80 Configuration Single TO-247 S G D ORDERING INFORMATION Package Lead (Pb)-free SnPb G D S
More informationPower MOSFET FEATURES. IRFB17N50LPbF SiHFB17N50L-E3 IRFB17N50L SiHFB17N50L
Power MOSFET IRFB7N50L, SiHFB7N50L PRODUCT SUMMARY V DS (V) 500 R DS(on) ( ) V GS = 0 V 0.28 Q g (Max.) (nc) 30 Q gs (nc) 33 Q gd (nc) 59 Configuration Single TO220AB G DS ORDERING INFORMATION Package
More informationP-Channel 60-V (D-S) MOSFET
P-Channel -V (-) MOFET TM PROUCT UMMARY V (V) R (on) ( ) I (A) a Q g (Typ.). at V G = - V - - 7. nc.3 at V G = -.5 V - FEATURE TrenchFET Power MOFET % UI Tested APPLICATION Load witch O- G 7 3 G 5 Top
More informationPower MOSFET. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 600 V Gate-Source Voltage V GS ± 30 T C = 25 C. V GS at 10 V
Power MOSFET PRODUCT SUMMARY V DS (V) 600 R DS(on) ( ) V GS = V 0.75 Q g (Max.) (nc) 49 Q gs (nc) 3 Q gd (nc) 20 Configuration Single G D 2 PAK (TO-263) D S Note a. See device orientation. G N-Channel
More informationPower MOSFET FEATURES. IRF740LCPbF SiHF740LC-E3 IRF740LC SiHF740LC T C = 25 C. V GS at 10 V
Power MOSFET PRODUCT SUMMARY (V) 400 R DS(on) (Ω) = V 0.55 Q g (Max.) (nc) 39 Q gs (nc) Q gd (nc) 19 Configuration Single FEATURES Ultra Low Gate Charge Reduced Gate Drive Requirement Enhanced 30 V Rating
More informationPower MOSFET. ORDERING INFORMATION Package SOT-223 SOT-223 Lead (Pb)-free and Halogen-free SiHFL9110-GE3 SiHFL9110TR-GE3 a Lead (Pb)-free
Power MOSFET PROUCT SUMMARY (V) 100 R S(on) (Ω) V GS = 10 V 1.2 Q g (Max.) (nc) 8.7 Q gs (nc) 2.2 Q gd (nc) 4.1 Configuration Single SOT223 G S Note a. See device orientation. G S PChannel MOSFET FEATURES
More informationPower MOSFET FEATURES. IRLZ24PbF SiHLZ24-E3 IRLZ24 SiHLZ24 T C = 25 C
Power MOSFET PRODUCT SUMMARY (V) 60 R DS(on) (Ω) V GS = 5.0 V 0.10 Q g (Max.) (nc) 18 Q gs (nc) 4.5 Q gd (nc) 12 Configuration Single TO-220 G D S ORDERING INFORMATION Package Lead (Pb)-free SnPb G D S
More informationD Series Power MOSFET
D Series Power MOSFET SiHP25N4D PRODUCT SUMMARY (V) at T J max. 45 R DS(on) max. at 25 C ( ) V GS = V.7 Q g max. (nc) 88 Q gs (nc) 2 Q gd (nc) 23 Configuration Single TO22AB G DS ORDERING INFORMATION Package
More informationD Series Power MOSFET
D Series Power MOSFET SiHP25N4D PRODUCT SUMMARY (V) at T J max. 45 R DS(on) max. at 25 C ( ) = V.7 Q g max. (nc) 88 Q gs (nc) 2 Q gd (nc) 23 Configuration Single TO22AB G DS ORDERING INFORMATION Package
More informationEL Series Power MOSFET
EL Series Power MOSFET SiHP22N6EL PRODUCT SUMMARY (V) at T J max. 65 R DS(on) typ. at 25 C (Ω) V GS = V.7 Q g max. (nc) 74 Q gs (nc) 5 Q gd (nc) 5 Configuration Single FEATURES Reduced figureofmerit (FOM)
More informationPower MOSFET FEATURES. IRFD014PbF SiHFD014-E3 IRFD014 SiHFD014
Power MOSFET PRODUCT SUMMARY (V) 60 R DS(on) ( ) V GS = 10 V 0.20 Q g (Max.) (nc) 11 Q gs (nc) 3.1 Q gd (nc) 5.8 Configuration Single D HVMDIP S G ORDERING INFORMATION Package Lead (Pb)-free SnPb G D S
More informationPower MOSFET. IRF510PbF SiHF510-E3 IRF510 SiHF510
Power MOSFET IRF510, SiHF510 PRODUCT SUMMARY (V) 100 R DS(on) () = 0.54 Q g max. (nc) 8.3 Q gs (nc) 2.3 Q gd (nc) 3.8 Configuration Single FEATURES Dynamic dv/dt rating Repetitive avalanche rated 175 C
More informationE Series Power MOSFET
E Series Power MOSFET SiHDN8E DPAK (TO5) D PRODUCT SUMMARY G S NChannel MOSFET (V) at T J max. 85 R DS(on) typ. (Ω) at 5 C V GS = V.8 Q g max. (nc) Q gs (nc) 5 Q gd (nc) 8 Configuration Single G D S FEATURES
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E Series Power MOSFET SiHS9N65E PRODUCT SUMMARY (V) at T J max. 7 R DS(on) () typ. at 25 C V GS = V.25 Q g (nc) max. 59 Q gs (nc) 84 Q gd (nc) 6 Configuration Single FEATURES Low figureofmerit (FOM) R
More informationPower MOSFET FEATURES. IRF737LCPbF SiHF737LC-E3 IRF737LC SiHF737LC
Power MOSFET PRODUCT SUMMARY (V) 300 R DS(on) (Ω) = 0 V 0.75 Q g (Max.) (nc) 7 Q gs (nc) 4.8 Q gd (nc) 7.6 Configuration Single TO220 G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G D S NChannel
More informationPower MOSFET FEATURES. IRFP360PbF SiHFP360-E3 IRFP360 SiHFP360
Power MOFET PROUCT UMMRY V (V) 00 R (on) (Ω) = 10 V 0.20 Q g (Max.) (nc) 210 Q gs (nc) 30 Q gd (nc) 110 Configuration ingle TO27C G ORERING INFORMTION Package Lead (Pb)free npb G NChannel MOFET FETURE
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P-Channel 2 V (-S) MOSFET 6 Marking code: BQ TSOP-6 Single S 4 5 Top View PROUCT SUMMARY V S (V) -2 R S(on) max. ( ) at V GS = -4.5 V.24 R S(on) max. ( ) at V GS = -2.5 V.32 R S(on) max. ( ) at V GS =
More informationPower MOSFET FEATURES. IRF520PbF SiHF520-E3 IRF520 SiHF520. PARAMETER SYMBOL LIMIT UNIT Drain-Source Voltage V DS 100 V Gate-Source Voltage V GS ± 20
Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) ( ) = 0.7 Q g (Max.) (nc) 16 Q gs (nc) 4.4 Q gd (nc) 7.7 Configuration Single TO0AB G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G D S NChannel MOSFET
More informationPower MOSFET. IRFI640GPbF SiHFI640G-E3 IRFI640G SiHFI640G T C = 25 C. V GS at 10 V
Power MOSFET PRODUCT SUMMARY (V) 200 R DS(on) (Ω) V GS = 10 V 0.18 Q g (Max.) (nc) 70 Q gs (nc) 13 Q gd (nc) 39 Configuration Single TO220 FULLPAK G D S ORDERING INFORMATION Package Lead (Pb)free SnPb
More informationPower MOSFET. IRLI620GPbF SiHLI620G-E3 IRLI620G SiHLI620G
Power MOSFET PRODUCT SUMMARY (V) 200 R DS(on) (Ω) V GS = 5.0 V 0.80 Q g (Max.) (nc) 16 Q gs (nc) 2.7 Q gd (nc) 9.6 Configuration Single TO220 FULLPAK G D S ORDERING INFORMATION Package Lead (Pb)free SnPb
More informationPower MOSFET FEATURES. IRFIB6N60APbF SiHFIB6N60A-E3 IRFIB6N60A SiHFIB6N60A
Power MOSFET IRFIB6N60A, SiHFIB6N60A PRODUCT SUMMARY V DS (V) 600 R DS(on) (Ω) V GS = V 0.75 Q g (Max.) (nc) 49 Q gs (nc) 3 Q gd (nc) 20 Configuration Single TO-220 FULLPAK D G FEATURES Low Gate Charge
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D Series Power MOSFET SiHD3N5D PRODUCT SUMMARY (V) at T J max. 55 R DS(on) max. () at 25 C V GS = V 3.2 Q g max. (nc) 2 Q gs (nc) 2 Q gd (nc) 3 Configuration Single DPAK (TO252) D G ORDERING INFORMATION
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EF Series Power MOSFET With Fast Body Diode SiHP38N6EF D TO22AB G G DS S NChannel MOSFET PRODUCT SUMMARY (V) at T J max. 65 R DS(on) typ. ( ) at 25 C V GS = V.6 Q g max. (nc) 89 Q gs (nc) 26 Q gd (nc)
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E Series Power MOSFET SiHG8N6E TO247AC S G D PRODUCT SUMMARY NChannel MOSFET (V) at T J max. 65 R DS(on) typ. ( ) at 25 C V GS = V.26 Q g max. (nc) 443 Q gs (nc) 85 Q gd (nc) 39 Configuration Single G
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D Series Power MOSFET TO22 FULLPAK D G S G D S NChannel MOSFET PRODUCT SUMMARY (V) at T J max. 55 R DS(on) max. () at 25 C V GS = V.28 Q g max. (nc) 76 Q gs (nc) Q gd (nc) 7 Configuration Single ORDERING
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EF Series Power MOSFET With Fast Body Diode SiHF35N6EF TO22 FULLPAK D FEATURES A specific on resistance (m cm 2 ) reduction of 25 % G D S G S NChannel MOSFET Low figureofmerit (FOM) R on x Q g Low input
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E Series Power MOSFET SiHP35N6E PRODUCT SUMMARY (V) at T J max. 65 R DS(on) typ. () at 25 C V GS = V.82 Q g max. (nc) 32 Q gs (nc) 22 Q gd (nc) 46 Configuration Single D TO22AB G G DS S NChannel MOSFET
More informationN-Channel 100-V (D-S) MOSFET
N-Channel -V (-S) MOSFET PROUCT SUMMARY V S (V) R S(on) (Ω) I (A).5 at V GS = V 7.9. at V GS = 6. V 7.5 FEATURES Halogen-free According to IEC 649-- efinition TrenchFET Power MOSFETs 75 C Maximum Junction
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Power MOSFET PRODUCT SUMMARY (V) 60 R DS(on) (Ω) V GS = 5.0 V 0.10 Q g (Max.) (nc) 18 Q gs (nc) 4.5 Q gd (nc) 12 Configuration Single D HVMDIP G S G D S N-Channel MOSFET ORDERING INFORMATION Package Lead
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E Series Power MOSFET PRODUCT SUMMARY (V) at T J max. 65 R DS(on) typ. at 25 C ( ) V GS =.56 Q g max. (nc) 82 Q gs (nc) 29 Q gd (nc) 62 Configuration Single FEATURES Low figureofmerit (FOM) R on x Q g
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Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) (Ω) = 10 V 1. Q g (Max.) (nc) 8.7 Q gs (nc). Q gd (nc) 4.1 Configuration Single S FEATURES Dynamic dv/dt Rating Repetitive Avalanche Rated PChannel 175 C Operating
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Power MOSFET PRODUCT SUMMARY (V) 100 R DS(on) ( ) = 0.60 Q g (Max.) (nc) 18 Q gs (nc) 3.0 Q gd (nc) 9.0 Configuration Single TO220AB G DS ORDERING INFORMATION Package Lead (Pb)free SnPb G S D PChannel
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D Series Power MOSFET SiHPND PRODUCT SUMMARY (V) at T J max. 5 R DS(on) max. at 25 C () = V. Q g max. (nc) 8 Q gs (nc) 3 Q gd (nc) Configuration Single TO22AB D G G DS S NChannel MOSFET ORDERING INFORMATION
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