Power MOSFET. IRF540SPbF IRF540STRLPbF a IRF540STRRPbF a SiHF540S-E3 SiHF540STL-E3 a SiHF540STR-E3 a T C = 25 C. V GS at 10 V

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1 IRF40S, SiHF40S Power MOSFET PROUCT SUMMRY V S (V) 100 R S(on) ( ) = Q g (Max.) (nc) 72 Q gs (nc) 11 Q gd (nc) 32 Configuration Single G 2 PK (TO263) S Note a. See device orientation. G NChannel MOSFET Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. V = 2 V, starting T J = 2 C, L = 440 μh, R g = 2, I S = 28 (see fig. 12). c. I S 28, di/dt 170 /μs, V V S, T J 17 C. d. 1.6 mm from case. e. When mounted on 1" square PCB (FR4 or G10 material). S FETURES Halogenfree ccording to IEC efinition Surface Mount vailable in Tape and Reel ynamic dv/dt Rating Repetitive valanche Rated 17 C Operating Temperature Fast Switching Ease of Paralleling Compliant to RoHS irective 2002/9/EC ESCRIPTION Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low onresistance and costeffectiveness. The 2 PK (TO263) is a surface mount power package capable of accommodating die size up to HEX4. It provides the highest power capability and the lowest possible onresistance in any existing surface mount package. The 2 PK (TO263) is suitable for high current applications because of its low internal connection resistance and can dissipate up to 2.0 W in a typical surface mount application. ORERING INFORMTION Package 2 PK (TO263) 2 PK (TO263) 2 PK (TO263) Lead (Pb)free and Halogenfree SiHF40SGE3 SiHF40STRLGE3 a SiHF40STRRGE3 a Lead (Pb)free IRF40SPbF IRF40STRLPbF a IRF40STRRPbF a SiHF40SE3 SiHF40STLE3 a SiHF40STRE3 a BSOLUTE MXIMUM RTINGS T C = 2 C, unless otherwise noted PRMETER SYMBOL LIMIT UNIT rainsource Voltage V S 100 GateSource Voltage ± 20 V Continuous rain Current at T C = 2 C 28 I T C = 100 C 20 Pulsed rain Current a I M 110 Linear erating Factor 1.0 Linear erating Factor (PCB Mount) e 0.02 W/ C Single Pulse valanche Energy b E S 230 mj valanche Current a I R 28 Repetitive valanche Energy a E R 1 mj Maximum Power issipation T C = 2 C 10 P Maximum Power issipation (PCB Mount) e T = 2 C 3.7 W Peak iode Recovery dv/dt c dv/dt. V/ns Operating Junction and Storage Temperature Range T J, T stg to 17 Soldering Recommendations (Peak Temperature) for 10 s 300 d C * Pb containing terminations are not RoHS compliant, exemptions may apply ocument Number: S111046Rev., 30May11 1

2 IRF40S, SiHF40S THERML RESISTNCE RTINGS PRMETER SYMBOL TYP. MX. UNIT Maximum Junctiontombient R thj 62 Maximum Junctiontombient (PCB Mount) a R thj 40 Maximum JunctiontoCase (rain) R thjc 1.0 Note a. When mounted on 1" square PCB (FR4 or G10 material). C/W SPECIFICTIONS T J = 2 C, unless otherwise noted PRMETER SYMBOL TEST CONITIONS MIN. TYP. MX. UNIT Static rainsource Breakdown Voltage V S = 0, I = 20 μ 100 V V S Temperature Coefficient V S /T J Reference to 2 C, I = 1 m 0.13 V/ C GateSource Threshold Voltage (th) V S =, I = 20 μ V GateSource Leakage I GSS = ± 20 V ± 100 n V S = 100 V, = 0 V 2 Zero Gate Voltage rain Current I SS V S = 80 V, = 0 V, T J = 10 C 20 μ rainsource OnState Resistance R S(on) = I = 17 b Forward Transconductance g fs V S = 0 V, I = 17 b 8.7 S ynamic Input Capacitance C iss VGS = 0 V, 1700 Output Capacitance C oss V S = 2 V, 60 pf Reverse Transfer Capacitance C rss f = 1.0 MHz, see fig. 120 Total Gate Charge Q g 72 GateSource Charge Q gs I = = 17, V S = 80 V, see fig. 6 and 13 b 11 nc Gaterain Charge Q gd 32 TurnOn elay Time t d(on) 11 Rise Time t r V = 0 V, I = 17, 44 TurnOff elay Time t d(off) R g = 9.1, R = 2.9, see fig. 10 b 3 ns Fall Time t f 43 Internal rain Inductance L Between lead, 4. 6 mm (0.2") from package and center of nh G Internal Source Inductance L S die contact 7. rainsource Body iode Characteristics Continuous Sourcerain iode Current I MOSFET symbol S 28 showing the G integral reverse Pulsed iode Forward Current a I SM p n junction diode S 110 Body iode Voltage V S T J = 2 C, I S = 28, = 0 V b 2. V Body iode Reverse t rr ns Recovery Time T J = 2 C, I F = 17, di/dt = 100 /μs b Body iode Reverse Recovery Charge Q rr μc Forward TurnOn Time t on Intrinsic turnon time is negligible (turnon is dominated by L S and L ) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width 300 μs; duty cycle 2 %. S ocument Number: S111046Rev., 30May11

3 IRF40S, SiHF40S TYPICL CHRCTERISTICS 2 C, unless otherwise noted I, rain Current () Top 1 V 8.0 V 7.0 V 6.0 V. V.0 V Bottom 4. V 4. V I, rain Current () C 17 C 20 µs Pulse Width T C = 2 C 20 µs Pulse Width V S = 0 V 91022_ V S, raintosource Voltage (V) 91022_ , GatetoSource Voltage (V) Fig. 1 Typical Output Characteristics, T C = 2 C Fig. 3 Typical Transfer Characteristics I, rain Current () 91022_ Top Bottom 1 V 8.0 V 7.0 V 6.0 V. V.0 V 4. V V S, raintosource Voltage (V) 4. V 20 µs Pulse Width T C = 17 C R S(on), raintosource On Resistance (Normalized) 91022_ I = 17 = T J, Junction Temperature ( C) Fig. 2 Typical Output Characteristics, T C = 17 C Fig. 4 Normalized OnResistance vs. Temperature ocument Number: S111046Rev., 30May11 3

4 IRF40S, SiHF40S Capacitance (pf) 91022_ = 0 V, f = 1 MHz C iss = C gs C gd, C ds Shorted C rss = C gd C oss = C ds C gd C iss C oss C rss V S, raintosource Voltage (V) I S, Reverse rain Current () 91022_ C 2 C V S, Sourcetorain Voltage (V) = 0 V Fig. Typical Capacitance vs. raintosource Voltage Fig. 7 Typical Sourcerain iode Forward Voltage, GatetoSource Voltage (V) 91022_ I = 17 V S = 20 V V S = 0 V V S = 80 V Q G, Total Gate Charge (nc) For test circuit see figure I, rain Current () 91022_ Operation in this area limited by R S(on) T C = 2 C T J = 17 C Single Pulse 10 µs 100 µs 1 ms 10 ms V S, raintosource Voltage (V) Fig. 6 Typical Gate Charge vs. GatetoSource Voltage Fig. 8 Maximum Safe Operating rea ocument Number: S111046Rev., 30May11

5 IRF40S, SiHF40S R V S I, rain Current () R g Pulse width 1 µs uty factor 0.1 %.U.T. Fig. 10a Switching Time Test Circuit V V S % 91022_09 T C, Case Temperature ( C) Fig. 9 Maximum rain Current vs. Case Temperature 10 % t d(on) t r t d(off) t f Fig. 10b Switching Time Waveforms 10 Thermal Response (Z thjc ) = Single Pulse (Thermal Response) P M t 1 t 2 Notes: 1. uty Factor, = t 1 /t 2 2. Peak T j = P M x Z thjc T C 91022_11 t 1, Rectangular Pulse uration (s) Fig. 11 Maximum Effective Transient Thermal Impedance, JunctiontoCase ocument Number: S111046Rev., 30May11

6 IRF40S, SiHF40S L Vary t p to obtain required I S R g V S.U.T I S V V S t p V S V t p 0.01 Ω I S Fig. 12a Unclamped Inductive Test Circuit Fig. 12b Unclamped Inductive Waveforms E S, Single Pulse Energy (mj) 91022_12c Top Bottom V = 2 V I Starting T J, Junction Temperature ( C) 17 Fig. 12c Maximum valanche Energy vs. rain Current Current regulator Same type as.u.t. Q G 12 V 0.2 µf 0 kω 0.3 µf Q GS Q G.U.T. V S V G Charge 3 m Fig. 13a Basic Gate Charge Waveform Fig. 13b Gate Charge Test Circuit I G I Current sampling resistors ocument Number: S111046Rev., 30May11

7 IRF40S, SiHF40S Peak iode Recovery dv/dt Test Circuit.U.T. Circuit layout considerations Low stray inductance Ground plane Low leakage inductance current transformer R g dv/dt controlled by R g river same type as.u.t. I S controlled by duty factor.u.t. device under test V river gate drive P.W. Period = P.W. Period = a.u.t. l S waveform Reverse recovery current Body diode forward current di/dt.u.t. V S waveform iode recovery dv/dt V Reapplied voltage Inductor current Body diode forward drop Ripple % I S Note a. = V for logic level devices Fig. 14 For NChannel maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see ocument Number: S111046Rev., 30May11 7

8 Package Information TO263B (HIGH VOLTGE) (atum ) 3 4 E 4 L1 4 H 1 2 C 3 C L2 B B etail c2 B Gauge plane 0 to 8 L3 L L4 etail Rotated 90 CW scale 8:1 H 1 B Seating plane 2 x b2 2 x e 2 x b M M B Plating b1, b3 c ± M B Base metal E 1 4 (c) c1 Lead tip (b, b2) Section B B and C C Scale: none E1 View 4 MILLIMETERS INCHES MILLIMETERS INCHES IM. MIN. MX. MIN. MX. IM. MIN. MX. MIN. MX E b E b e 2.4 BSC BSC b H b L c L c L c L3 0.2 BSC BSC L ECN: S82110Rev., 1Sep08 WG: 970 Notes 1. imensioning and tolerancing per SME Y14.M imensions are shown in millimeters (inches). 3. imension and E do not include mold flash. Mold flash shall not exceed mm (0.00") per side. These dimensions are measured at the outmost extremes of the plastic body at datum. 4. Thermal P contour optional within dimension E, L1, 1 and E1.. imension b1 and c1 apply to base metal only. 6. atum and B to be determined at datum plane H. 7. Outline conforms to JEEC outline to TO263B. ocument Number: Revision: 1Sep08 1

9 Legal isclaimer Notice Vishay isclaimer LL PROUCT, PROUCT SPECIFICTIONS N T RE SUBJECT TO CHNGE WITHOUT NOTICE TO IMPROVE RELIBILITY, FUNCTION OR ESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, Vishay ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, noninfringement and merchantability. Statements regarding the suitability of products for certain types of applications are based on Vishay s knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer s responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. ll operating parameters, including typical parameters, must be validated for each customer application by the customer s technical experts. Product specifications do not expand or otherwise modify Vishay s terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, lifesaving, or lifesustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners VISHY INTERTECHNOLOGY, INC. LL RIGHTS RESERVE Revision: 08Feb17 1 ocument Number: 91000